arXiv subjects

Huaicheng Yuan

Publications and source records attributed to Huaicheng Yuan.

2 recordsLinked to original sources

arXiv2026

Unlocking Cryogenic Energy Storage by Constructing Dipole Glass with Unit-cell-level Polar Disorder

Cryogenic energy storage is vital for frontier technologies including deep-space exploration and quantum computing, yet conventional electrochemical energy systems fail below ~230 K due to frozen ion migration. While relaxor-based dielectric capacitors provide high efficiency at room temperature, the intrinsic freezing/growth of polar nanodomains at extended cryogenic regime limits their applications with deteriorated hysteresis losses. Here, we realize superior cryogenic energy-storage performance by designing unit-cell-level disordered dipole-glass state in Pb0.6Sr0.4ZrO3 thin films with composition near antiferroelectric-paraelectric phase boundary. The antiferroelectric-derived dipole-glass introduces enhanced unit-cell-level complexity of dipole interaction that suppresses long-range ferroelectric order. This enables ultralow-hysteresis operation (efficiency > 88%) down to 4 K, delivering record-high energy density (211 J/cm^3) at 9 MV/cm, stability over 10^8 charge/discharge cycles and microsecond-scale charge/discharge capability. This work establishes a dipole-glass paradigm for cryogenic dielectric capacitors, opening a new avenue to highly-efficient energy-storage systems with broad applications in frontier nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2025

Atomic-Scale Roughness of Freestanding Oxide Membranes Revealed by Electron Ptychography

Freestanding oxide films offer significant potential for integrating exotic quantum functionalities with semiconductor technologies. However, their performance is critically limited by surface roughness and interfacial imperfection caused by dangling bonds, which disrupt coherent interactions and suppress quantum phenomena at heterointerfaces. To address the challenge of structural characterization of surfaces and interfaces, we develop a metrological approach achieving atomic-scale precision in mapping the topography of both free surfaces and buried interfaces within ultrathin oxide heterostructures leveraging three-dimensional structures reconstructed from multislice electron ptychography. This method also allows for counting the number of atoms, even including light elements such as oxygen, along the electron trajectory in electron microscopy, leading to the identification of surface termination in oxide films. The planar-view of measurement geometry, allowing for large field-of-view imaging, provides remarkably rich information and high statistics about the atomic-scale structural inhomogeneities in freestanding membranes. This quantitative analysis provides unprecedented capabilities for correlating structural imperfection with quantum device performance, offering critical insights for engineering robust heterointerfaces in next-generation oxide electronics.

cond-mat.mtrl-sci↗