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Hubert Riedl

Publications and source records attributed to Hubert Riedl.

13 recordsLinked to original sources

Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics

We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime and subsequent capping with an InGaA strain-reducing layer to redshift the emission wavelength. For different growth conditions, we investigate the optical properties of the dots using photoluminescence mapping and correlate with structural properties determined by scanning transmission electron microscopy. Using a surface roughness modulation technique and synchronizing InAs sub-monolayer deposition cycles with substrate rotation, we control the dot density and position low-density regions (< 1 QD per um^2) on the substrate. Hyperspectral imaging is used to map the spatial and spectral characteristics of many individual dots in the low-density region, confirming that our approach is universally applicable to conventional MBE growth on (001) surfaces. Finally, we tune the QD emission wavelength within the O-band using electric fields and demonstrate single-photon emission with g(2)(0) = 0.020(14).

cond-mat.mtrl-sci

Deterministic Control of Photon-Number Probabilities via Phase-Controlled Quantum Interference

Deterministically tailoring optical Fock states beyond the single-photon level is crucial for boson sampling, loss-tolerant photonic qubits, and quantum-enhanced sensing, however has yet remained elusive. Here, we report an all-linear-optical protocol that converts a resonantly driven single-photon emitter into a deterministic generator of vacuum--single-photon--two-photon states. A phase-stabilized, path-unbalanced Mach-Zehnder interferometer combines vacuum--single-photon interference and Hong-Ou-Mandel effect, providing two knobs to shape photon-number probabilities. By tuning these knobs, we observe a dynamic transition from antibunching to strong bunching in correlation measurements. A fully quantum-mechanical, discrete time-bin model maps these results onto the tailored photon statistics. The same framework predicts that two indistinguishable emitters would extend the accessible space to deterministic NOON states and single-photon filtering. This protocol relying on linear optics and available single-photon sources provides a scalable, chip-compatible, and platform-independent route to on-demand and deterministic few-photon resources for quantum metrology, photonic computing, as well as long-distance quantum networks.

quant-ph

Selective filtering of multi-photon events from a single-photon emitter

Single-photon purity is one of the most important key metrics of many quantum states of light. For applications in photonic quantum technologies, e.g. quantum communication and linear optical quantum computing, a minimization of the multi-photon error rate is required because of its error-introducing nature. Ultimately, the purity of state-of-the-art single-photon sources was found to be limited by spontaneous emission and subsequent reexcitation during the interaction with the driving field. Here, we demonstrate that even this fundamental limit to the single-photon purity can be overcome due to the distinct spectro-temporal properties of the individual photons forming multi-photon errors. For driving pulses shorter than the emitter lifetime, we find that photons emitted during the pulse exhibit a significantly broader spectral shape than the emitter's natural linewidth. Thus, we can selectively filter out the majority of this instantaneously emitted photon by employing narrowband spectral filters which reduces the measured degree of second-order coherence at zero time delay by almost one order of magnitude. This enables a significant suppression of the multi-photon error rate without detrimental effects on the desired single-photon emission.

quant-ph

Dynamically Dressed States of a Quantum Four-Level System

In this work, we experimentally and theoretically study the dressed-state emission of the biexciton-exciton cascade in a semiconductor quantum dot under pulsed, resonant, two-photon excitation. Building on the well-characterized steady-state dressed emission of the four-level system, we examine its dynamic counterpart under pulsed, resonant excitation, addressing both experimental observations and theoretical modeling. Here we report several sidebands emerging from the biexciton-to-exciton transition, whose number and spectral width depend on the excitation pulse duration and the effective pulse area, while no sidebands emerge from the exciton-to-ground-state transition. Since the biexciton state population follows a nonlinear pulse area function, sidebands with a small spectral nonlinearity result. Detuning- and time-dependent measurements provide deeper insight into the emission properties of the dressed states. They show that side peak emission only occurs in the presence of the excitation pulse. Moreover, when the system is excited by a Gaussian-shaped laser pulse, side peak emission takes place sequentially.

quant-ph

Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources

The development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy grown semiconductor quantum dots emitting in the telecom O- and C- bands. The quantum dots are embedded in a InGaAs matrix with fixed indium content grown on top of a compositionally graded InGaAs buffer. This structure allows for the future implementation of electrically contacted nanocavities to enable high-quality and bright QD emission. In detailed optical characterizations we observe linewidths as low as $ 50 \mu$eV, close to the spectrometer resolution limit, low fine structure splittings close to $ 10 \mu$eV, and $g^{(2)} (0)$ values as low as $0.08$. These results advance the current performance metrics for MBE-grown quantum dots on GaAs substrates emitting in the telecom bands and showcase the potential of the presented heterostructures for further integration into photonic devices.

cond-mat.mes-hall

Unlocking multiphoton emission from a single-photon source through mean-field engineering

Single-photon emission from a two-level system offers promising perspectives for the development of quantum technologies, where multiphotons are generally regarded as accidental, undesired and should be suppressed. In quantum mechanics, however, multiphoton emission can turn out to be even more fundamental and interesting than the single-photon emission, since in a coherently driven system, the multiphoton suppression arises from quantum interferences between virtual multiphoton fluctuations and the mean field in a Poisson superposition of all number states. Here, we demonstrate how one can control the multiphoton dynamics of a two-level system by disrupting these quantum interferences through a precise and independent homodyne control of the mean field. We show that, counterintuitively, quantum fluctuations always play a major qualitative role, even and in fact especially, when their quantitative contribution is vanishing as compared to that of the mean field. Our findings provide new insights into the paradoxical character of quantum mechanics and open pathways for mean-field engineering as a tool for precision multiphoton control.

quant-ph

MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands

InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and third telecom windows with similar performance remains an open challenge. Here, we report an optimized heterostructure design for QDs emitting in the O- and C-bands grown by means of molecular beam epitaxy. The InAs QDs are grown on compositionally graded InGaAs buffers, which act as virtual substrates, and are embedded in mostly relaxed active regions. Reciprocal space maps of the indium profiles and optical absorption spectra are used to optimize In0.22Ga0.78As and In0.30Ga0.70As active regions, accounting for the chosen indium grading profile. This approach results in a tunable QD photoluminescence (PL) emission from 1200 up to 1600 nm. Power and polarization dependent micro-PL measurements performed at 4 K reveal exciton-biexciton complexes from quantum dots emitting in the telecom O- and C-bands. The presented study establishes a flexible platform that can be an essential component for advanced photonic devices based on InAs/GaAs that serve as building blocks for future quantum networks.

cond-mat.mes-hall

Signatures of dynamically dressed states

The interaction of a resonant light field with a quantum two-level system is of key interest both for fundamental quantum optics and quantum technological applications employing resonant excitation. While emission under resonant continuous-wave excitation has been well-studied, the more complex emission spectrum of dynamically dressed states, a quantum two-level system driven by resonant pulsed excitation, has so far been investigated in detail only theoretically. Here, we present the first experimental observation of the complete resonance fluorescence emission spectrum of a single quantum two-level system, in form of an excitonic transition in a semiconductor quantum dot, driven by finite Gaussian pulses. We observe multiple emerging sidebands as predicted by theory with an increase of their number and spectral detuning with excitation pulse intensity and a dependence of their spectral shape and intensity on the pulse length. Detuning-dependent measurements provide additional insights into the emission features. The experimental results are in excellent agreement with theoretical calculations of the emission spectra, corroborating our findings.

quant-ph

Coherent Dynamics of the Swing-Up Excitation Technique

Developing coherent excitation methods for quantum emitters which enable high brightness, good single-photon purity and high indistinguishability of the emitted photons has been a key challenge in the past years. While many methods have been proposed and explored, they all have specific advantages and disadvantages. In this letter, we investigate the dynamics of the recent swing-up scheme as an excitation method for a two-level system and its performance in single-photon generation. By applying two far red-detuned laser pulses, the two-level system can be prepared in the excited state with near-unity fidelity. We demonstrate the successful functionality and the coherent character of this technique using semiconductor quantum dots. Moreover, we explore the multi-dimensional parameter space of the two laser pulses to study the impact on the excitation fidelity. Finally, we investigate the performance of the scheme as an excitation method for generation of high-quality single photons. We find that the swing-up scheme itself works well and exhibits nearly perfect single-photon purity, while the observed indistinguishability in our sample is limited by the influence of the inevitable high excitation powers on the semiconductor environment of the quantum dot.

quant-ph

Quantum dot molecule devices with optical control of charge status and electronic control of coupling

Tunnel-coupled pairs of optically active quantum dots - quantum dot molecules (QDMs) - offer the possibility to combine excellent optical properties such as strong light-matter coupling with two-spin singlet-triplet ($S-T_0$) qubits having extended coherence times. The $S-T_0$ basis formed using two spins is inherently protected against electric and magnetic field noise. However, since a single gate voltage is typically used to stabilize the charge occupancy of the dots and control the inter-dot orbital couplings, operation of the $S-T_0$ qubits under optimal conditions remains challenging. Here, we present an electric field tunable QDM that can be optically charged with one (1h) or two holes (2h) on demand. We perform a four-phase optical and electric field control sequence that facilitates the sequential preparation of the 2h charge state and subsequently allows flexible control of the inter-dot coupling. Charges are loaded via optical pumping and electron tunnel ionization. We achieve one- and two-hole charging efficiencies of 93.5 $\pm$ 0.8 % and 80.5 $\pm$ 1.3 %, respectively. Combining efficient charge state preparation and precise setting of inter-dot coupling allows control of few-spin qubits, as would be required for on-demand generation of two-dimensional photonic cluster states or quantum transduction between microwaves and photons.

cond-mat.mes-hall

Stimulated generation of indistinguishable single photons from a quantum ladder system

We propose a scheme for the generation of highly indistinguishable single photons using semiconductor quantum dots and demonstrate its performance and potential. The scheme is based on the resonant two-photon excitation of the biexciton followed by stimulation of the biexciton to selectively prepare an exciton. Quantum-optical simulations and experiments are in good agreement and show that the scheme provides significant advantages over previously demonstrated excitation methods. The two-photon excitation of the biexciton suppresses re-excitation and enables ultra-low multi-photon errors, while the precisely timed stimulation pulse results in very low timing jitter of the photons, and consequently, high indistinguishability. Since both control laser fields are detuned from the emission energy, the scheme does not require polarization filtering, facilitating high brightness approaching unity. Moreover, the polarization of the emitted single photons is controlled by the stimulation laser field, such that the polarization of the quantum light is deterministically programmable.

cond-mat.mes-hall

Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties

Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are much desired. Here, we demonstrate two site-selective synthesis methods that achieve epitaxial, high aspect ratio InAs NWs on Si with ultrathin diameters below 20 nm. The first approach exploits direct vapor-solid growth to tune the NW diameter by interwire spacing, mask opening size and growth time. The second scheme explores a unique reverse-reaction growth by which the sidewalls of InAs NWs are thermally decomposed under controlled arsenic flux and annealing time. Interesting kinetically limited dependencies between interwire spacing and thinning dynamics are found, yielding diameters as low as 12 nm for sparse NW arrays. We clearly verify the 1D sub-band structure in ultrathin NWs by pronounced conductance steps in low-temperature transport measurements using back-gated NW-field effect transistors. Correlated simulations reveal single- and double degenerate conductance steps, which highlight the rotational hexagonal symmetry and reproduce the experimental traces in the diffusive 1D transport limit. Modelling under the realistic back-gate configuration further evidences regimes that lead to asymmetric carrier distribution and lifts of the degeneracy in dependence of gate bias.

cond-mat.mtrl-sci

Dissipative preparation of the exciton and biexciton in a self-assembled quantum dot on picosecond timescales

Pulsed resonant fluorescence is used to probe ultrafast phonon-assisted exciton and biexciton preparation in individual self-assembled InGaAs quantum dots. By driving the system using large area ($\geq10π$) near resonant optical pulses, we experimentally demonstrate how phonon mediated dissipation within the manifold of dressed excitonic states can be used to prepare the neutral exciton with a fidelity $\geq 70\%$. By comparing the phonon-assisted preparation with resonant Rabi oscillations we show that the phonon-mediated process provides the higher fidelity preparation for large pulse areas and is less sensitive to pulse area variations. Moreover, by detuning the laser with respect to the exciton transition we map out the spectral density for exciton coupling to the bulk LA-phonon continuum. Similar phonon mediated processes are shown to facilitate direct biexciton preparation via two photon biexciton absorption, with fidelities $>80\%$. Our results are found to be in very good quantitative agreement with simulations that model the quantum dot-phonon bath interactions with Bloch-Redfield theory.

cond-mat.mes-hall