arXiv subjects

Hugen Yan

Publications and source records attributed to Hugen Yan.

At least 37 records · Page 2Linked to original sources

arXiv2020

Van der Waals thin films of WTe2 for natural hyperbolic plasmonic surfaces

A hyperbolic plasmonic surface supports highly directional propagating polaritons with extremely large density of states. Such plasmon polaritons have been realized in artificially structured metasurfaces. However, the upper bound of the achievable plasmon wave vector is limited by the structure size, which calls for a natural hyperbolic surface without any structuring. Here, we experimentally demonstrate a natural hyperbolic plasmonic surface based on thin films of WTe2 in the light wavelength range of 16 to 23 microns by far infrared absorption spectroscopy. The topological transition from the elliptic to the hyperbolic regime is further manifested by mapping the iso-frequency contours of the plasmon. Moreover, the anisotropy character and plasmon frequency exhibit prominent temperature dependence. Our study demonstrates the first natural platform to host 2D hyperbolic plasmons, which opens exotic avenues for the manipulation of plasmon propagation, light-matter interaction and light emission in planar photonics.

cond-mat.mes-hall↗

arXiv2019

Magnetic order induced polarization anomaly of Raman scattering in 2D magnet CrI$_3$

The recent discovery of 2D magnets has revealed various intriguing phenomena due to the coupling between spin and other degree of freedoms (such as helical photoluminescence, nonreciprocal SHG). Previous research on the spin-phonon coupling effect mainly focuses on the renormalization of phonon frequency. Here we demonstrate that the Raman polarization selection rules of optical phonons can be greatly modified by the magnetic ordering in 2D magnet CrI$_3$. For monolayer samples, the dominant A$\rm_{1g}$ peak shows abnormally high intensity in the cross polarization channel at low temperature, which is forbidden by the selection rule based on the lattice symmetry. While for bilayer, this peak is absent in the cross polarization channel for the layered antiferromagnetic (AFM) state and reappears when it is tuned to the ferromagnetic (FM) state by an external magnetic field. Our findings shed light on exploring the emergent magneto-optical effects in 2D magnets.

cond-mat.mes-hall↗

arXiv2019

The Optical Properties and Plasmonics of Anisotropic 2-Dimensional Materials

In the fast growing two-dimensional (2D) materials family, anisotropic 2D materials, with their intrinsic in-plane anisotropy, exhibit a great potential in optoelectronics. One such typical material is black phosphorus (BP), with a layer-dependent and highly tunable band gap. Such intrinsic anisotropy adds a new degree of freedom to the excitation, detection and control of light. Particularly, hyperbolic plasmons with hyperbolic q-space dispersion are predicted to exist in BP films, where highly directional propagating polaritons with divergent densities of states are hosted. Combined with a tunable electronic structure, such natural hyperbolic surfaces may enable a series of exotic applications in nanophotonics. In this review, the anisotropic optical properties and plasmons (especially hyperbolic plasmons) of BP are discussed. In addition, other possible 2D material candidates (especially anisotropic layered semimetals) for hyperbolic plasmons are examined. This review may stimulate further research interest in anisotropic 2D materials and fully unleash their potential in flatland photonics.

cond-mat.mes-hall↗

arXiv2019

Strain-tunable van der Waals interactions in few-layer black phosphorus

Interlayer interactions in 2D materials, also known as van der Waals (vdWs) interactions, play a critical role in the physical properties of layered materials. It is fascinating to manipulate the vdWs interaction, and hence to "redefine" the material properties. Here, we demonstrate that in-plane biaxial strain can effectively tune the vdWs interaction of few-layer black phosphorus with thickness of 2-10 layers, using infrared spectroscopy. Surprisingly, our results reveal that in-plane tensile strain efficiently weakens the interlayer coupling, even though the sample shrinks in the vertical direction due to the Poisson effect, in sharp contrast to one's intuition. Moreover, density functional theory (DFT) calculations further confirm our observations and indicate a dominant role of the puckered lattice structure. Our study highlights the important role played by vdWs interactions in 2D materials during external physical perturbations.

cond-mat.mtrl-sci↗

arXiv2019

Drastic enhancement of the Raman intensity in few-layer InSe by uniaxial strain

The vibrational and electronic properties of 2-dimensinal (2D) materials can be efficiently tuned by external strain due to their good stretchability. Resonant Raman spectroscopy is a versatile tool to study the physics of phonons, electrons and their interactions simultaneously, which is particularly useful for the investigation of strain effect on 2D materials. Here, for the first time, we report the resonant Raman study of strained few-layer InSe (γ-phase). Under ~ 1% of uniaxial tensile strain, one order of magnitude enhancement of Raman intensity for longitudinal optical (LO) phonon is observed, while other modes exhibit only modest change. Further analysis demonstrates that it arises from the intraband electron-phonon scattering channel for LO phonon in resonance. The large enhancement of Raman intensity provides us a sensitive and novel method to characterize the strain effect and a mapping of the strain distribution in a wrinkled sample is demonstrated. In addition, we observed sizable redshifts of first-order optical phonon modes. The shift rate exhibits phonon mode dependence, in excellent agreement with density functional perturbation theory (DFPT) calculations. Our study paves the way for sensitive strain quantification in few-layer InSe and its application in flexible electronic and optoelectronic devices.

cond-mat.mes-hall↗

arXiv2019

Electronic structures of air-exposed few-layer black phosphorus by optical spectroscopy

The electronic structure of few-layer(FL) black phosphorus(BP) sensitively depends on the sample thickness, strain and doping. In this paper, we show that it is also vulnerable to air-exposure. The oxidation of BP caused by air-exposure gives several optical signatures, including the broadening of resonance peaks and increased Stokes shift between infrared (IR) absorption and photoluminescence (PL) peaks. More importantly, air exposure causes blue shifts of all resonance peaks in IR absorption and PL spectra, with more prominent effects for thinner samples and higher order subband transitions. Our study alludes a convenient and exotic way for band-structure engineering of FL-BP through controllable air-exposure or defect creation.

cond-mat.mes-hall↗

arXiv2019

Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability

A long-wavelength infrared (IR) photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging. However, sub-bandgap light detection in graphene and black phosphorus has been a long-standing scientific challenge because of low photoresponsivity, instability in the air and highdark current. In this study, we report a highly sensitive, air-stable and operable long-wavelength infrared photodetector at room temperature based on PdSe2 phototransistors and its heterostructure. A high photoresponsivity of ~42.1 AW-1 (at 10.6 μm) was demonstrated, which is an order of magnitude higher than the current record of platinum diselenide. Moreover, the dark current and noise power density were suppressed effectively by fabricating a van der Waals heterostructure. This work fundamentally contributes to establishing long-wavelength infrared detection by PdSe2 at the forefront of long-IR two-dimensional-materials-based photonics.

physics.app-ph↗

arXiv2018

Chiral Landau levels in Weyl semimetal NbAs with multiple topological carriers

Recently, Weyl semimetals have been experimentally discovered in both inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The non-trivial topology in Weyl semimetals can manifest itself with exotic phenomena which have been extensively investigated by photoemission and transport measurements. Despite the numerous experimental efforts on Fermi arcs and chiral anomaly, the existence of unconventional zeroth Landau levels, as a unique hallmark of Weyl fermions which is highly related to chiral anomaly, remains elusive owing to the stringent experimental requirements. Here, we report the magneto-optical study of Landau quantization in Weyl semimetal NbAs. High magnetic fields drive the system towards the quantum limit which leads to the observation of zeroth chiral Landau levels in two inequivalent Weyl nodes. As compared to other Landau levels, the zeroth chiral Landau level exhibits a distinct linear dispersion in z momentum direction and allows the optical transitions without the limitation of zero z momentum or square root of magnetic field evolution. The magnetic field dependence of the zeroth Landau levels further verifies the predicted particle-hole asymmetry of the Weyl cones. Meanwhile, the optical transitions from the normal Landau levels exhibit the coexistence of multiple carriers including an unexpected massive Dirac fermion, pointing to a more complex topological nature in inversion-symmetry-breaking Weyl semimetals. Our results provide insights into the Landau quantization of Weyl fermions and demonstrate an effective tool for studying complex topological systems.

cond-mat.mes-hall↗

arXiv2018

Determination of layer-dependent exciton binding energies in few-layer black phosphorus

The attraction between electrons and holes in semiconductors forms excitons, which largely determine the optical properties of the hosting material, and hence the device performance, especially for low-dimensional systems. Mono- and few-layer black phosphorus (BP) are emerging two-dimensional (2D) semiconductors. Despite its fundamental importance and technological interest, experimental investigation of exciton physics has been rather limited. Here, we report the first systematic measurement of exciton binding energies in ultrahigh quality few-layer BP by infrared absorption spectroscopy, with layer (L) thickness ranging from 2-6 layers. Our experiments allow us to determine the exciton binding energy, decreasing from 213 meV (2L) to 106 meV (6L). The scaling behavior with layer number can be well described by an analytical model, which takes into account the nonlocal screening effect. Extrapolation to free-standing monolayer yields a large binding energy of ~800 meV. Our study provides insights into 2D excitons and their crossover from 2D to 3D, and demonstrates that few-layer BP is a promising high-quality optoelectronic material for potential infrared applications.

cond-mat.mes-hall↗

arXiv2017

Largely tunable band structures of few-layer InSe by uniaxial strain

Due to the strong quantum confinement effect, few-layer γ-InSe exhibits a layer-dependent bandgap, spanning the visible and near infrared regions, and thus recently draws tremendous attention. As a two-dimensional material, the mechanical flexibility provides an additional tuning knob for the electronic structure. Here, for the first time, we engineer the band structures of few-layer and bulk-like InSe by uniaxial tensile strain, and observe salient shift of photoluminescence (PL) peaks. The shift rate of the optical gap is approximately 90-100 meV per 1% strain for 4- to 8-layer samples, which is much larger than that for the widely studied MoS2 monolayer. Density functional calculations well reproduce the observed layer-dependent bandgaps and the strain effect, and reveal that the shift rate decreases with increasing layer number for few-layer InSe. Our study demonstrates that InSe is a very versatile 2D electronic and optoelectronic material, which is suitable for tunable light emitters, photo-detectors and other optoelectronic devices.

cond-mat.mes-hall↗

arXiv2017

Infrared fingerprints of few-layer black phosphorus

Black phosphorus is an infrared layered material. Its bandgap complements other widely studied two-dimensional materials: zero-gap graphene and visible/near-infrared gap transition metal dichalcogenides. Though highly desirable, a comprehensive infrared characterization is still lacking. Here we report a systematic infrared study of mechanically exfoliated few-layer black phosphorus, with thickness ranging from 2 to 15 layers and photon energy spanning from 0.25 to 1.36 eV. Each few-layer black phosphorus exhibits a thickness-dependent unique infrared spectrum with a series of absorption resonances, which reveals the underlying electronic structure evolution and serves as its IR fingerprints. Surprisingly, unexpected absorption features, which are associated with the forbidden optical transitions, have been observed. Furthermore, we unambiguously demonstrate that controllable uniaxial strain can be used as a convenient and effective approach to tune the electronic structure of few-layer black phosphorus. Our study paves the way for black phosphorus applications in infrared photonics and optoelectronics.

cond-mat.mes-hall↗

arXiv2016

Observation of quasi-two-dimensional Dirac fermions in ZrTe5

Since the discovery of graphene, layered materials have attracted extensive interests owing to their unique electronic and optical characteristics. Among them, Dirac semimetal, one of the most appealing categories, has been a long-sought objective in layered systems beyond graphene. Recently, layered pentatelluride ZrTe5 was found to host signatures of Dirac semimetal. However, the low Fermi level in ZrTe5 strongly hinders a comprehensive understanding of the whole picture of electronic states through photoemission measurements, especially in the conduction band. Here, we report the observation of Dirac fermions in ZrTe5 through magneto-optics and magneto-transport. By applying magnetic field, we observe a square-root-B dependence of inter-Landau-level resonance and Shubnikov-de Haas (SdH) oscillations with non-trivial Berry phase, both of which are hallmarks of Dirac fermions. The angular-dependent SdH oscillations show a clear quasi-two-dimensional feature with highly anisotropic Fermi surface and band topology, in stark contrast to the 3D Dirac semimetal such as Cd3As2. This is further confirmed by the angle-dependent Berry phase measurements and the observation of bulk quantum Hall plateaus. The unique band dispersion is theoretically understood: the system is at the critical point between a 3D Dirac semimetal and a topological insulator phase. With the confined interlayer dispersion and reducible dimensionality, our work establishes ZrTe5 as an ideal platform for exploring exotic physical phenomena of Dirac fermions.

cond-mat.mtrl-sci↗

arXiv2016

Graphene plasmonics: Physics and potential applications

Plasmon in graphene possesses many unique properties. It originates from the collective motion of massless Dirac fermions and the carrier density dependence is distinctively different from conventional plasmons. In addition, graphene plasmon is highly tunable and shows strong energy confinement capability. Most intriguing, as an atom-thin layer, graphene and its plasmon are very sensitive to the immediate environment. Graphene plasmons strongly couple to polar phonons of the substrate, molecular vibrations of the adsorbates, and lattice vibrations of other atomically thin layers. In this review paper, we'll present the most important advances in grapene plasmonics field. The topics include terahertz plasmons, mid-infrared plasmons, plasmon-phonon interactions and potential applications. Graphene plasmonics opens an avenue for reconfigurable metamaterials and metasurfaces. It's an exciting and promising new subject in the nanophotonics and plasmonics research field.

cond-mat.mes-hall↗

arXiv2016

Direct observation of Landau level resonance and mass generation in Dirac semimetal Cd3As2 thin films

Three-dimensional topological Dirac semimetals have hitherto stimulated unprecedented research interests as a new class of quantum materials. Breaking certain types of symmetries has been proposed to enable the manipulation of Dirac fermions; and that was soon realized by external modulations such as magnetic fields. However, an intrinsic manipulation of Dirac states, which is more efficient and desirable, remains a significant challenge. Here, we report a systematic study of quasi-particle dynamics and band evolution in Cd3As2 thin films with controlled Chromium (Cr) doping by both magneto-infrared spectroscopy and electrical transport. For the first time, we observe square-root-B relation of inter-Landau-level resonance in undoped Cd3As2 Dirac semimetal, an important signature of ultra-relativistic Dirac state inaccessible in previous optical experiments. A crossover from quantum to quasi-classical behavior makes it possible to directly probe the mass of Dirac fermions. Importantly, Cr doping allows for a Dirac mass acquisition and topological phase transition enabling a desired dynamic control of Dirac fermions. Corroborating with the density-functional theory calculations, we show that the mass generation is essentially driven by explicit C4 rotation symmetry breaking and the resultant Dirac gap engineering through Cr substitution for Cd atoms. The manipulation of the system symmetry and Dirac mass in Cd3As2 thin films provides a tuning knob to explore the exotic states stemming from the parent phase of Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2014

Novel mid-infrared plasmonic properties of bilayer graphene

We study the mid-infrared plasmonic response in Bernal-stacked bilayer graphene. Unlike its monolayer counterpart, bilayer graphene accommodates optically active phonon modes and a resonant interband transition at infrared frequencies. They strongly modifies the plasmonic properties of bilayer graphene, leading to Fano-type resonances, giant plasmonic enhancement of infrared phonon absorption, narrow window of optical transparency, and a new plasmonic mode at higher energy than the classical plasmon.

cond-mat.mes-hall↗

arXiv2014

Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures

Van der Waals heterostructures formed by assembling different two-dimensional atomic crystals into stacks can lead to many new phenomena and device functionalities. In particular, graphene/boron-nitride heterostructures have emerged as a very promising system for band engineering of graphene. However, the intrinsic value and origin of the bandgap in such heterostructures remain unresolved. Here we report the observation of an intrinsic bandgap in epitaxial graphene/boron-nitride heterostructures with zero crystallographic alignment angle. Magneto-optical spectroscopy provides a direct probe of the Landau level transitions in this system and reveals a bandgap of ~ 38 meV (440 K). Moreover, the Landau level transitions are characterized by effective Fermi velocities with a critical dependence on specific transitions and magnetic field. These findings highlight the important role of many body interactions in determining the fundamental properties of graphene heterostructures.

cond-mat.mes-hall↗

arXiv2013

Tunable phonon-induced transparency in bilayer graphene nanoribbons

In the phenomenon of electromagnetically induced transparency1 (EIT) of a three-level atomic system, the linear susceptibility at the dipole-allowed transition is canceled through destructive interference of the direct transition and an indirect transition pathway involving a meta-stable level, enabled by optical pumping. EIT not only leads to light transmission at otherwise opaque atomic transition frequencies, but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this letter, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active Γ-point optical phonon, whose function here is similar to that of the meta-stable level in EIT of atomic systems. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating, and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm-1, based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon non-linear optics and slow light in this novel two-dimensional material, without external optical pumping and at room temperature.

cond-mat.mes-hall↗

arXiv2013

Photocurrent in graphene harnessed by tunable intrinsic plasmons

Graphene's optical properties in the infrared and terahertz can be tailored and enhanced by patterning graphene into periodic metamaterials with sub-wavelength feature sizes. Here we demonstrate polarization sensitive and gate tunable photodetection in graphene nanoribbon arrays. The long-lived hybrid plasmon-phonon modes utilized are coupled excitations of electron density oscillations and substrate (SiO2) surface polar phonons. Their excitation by s-polarization leads to an in-resonance photocurrent an order of magnitude larger than the photocurrent observed for p-polarization, which excites electron-hole pairs. The plasmonic detectors exhibit photoinduced temperature increases up to four times as large as comparable 2D graphene detectors. Moreover, the photocurrent sign becomes polarization sensitive in the narrowest nanoribbon arrays due to differences in decay channels for photoexcited hybrid plasmon-phonons and electrons. Our work provides a path to light sensitive and frequency selective photodetectors based on graphene's plasmonic excitations.

cond-mat.mes-hall↗