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Hugo De Latour

Publications and source records attributed to Hugo De Latour.

2 recordsLinked to original sources

Atomic-resolution imaging of gold species at organic liquid-solid interfaces

Understanding solid-liquid interfaces at the atomic-scale is key to improved performance of heterogeneous catalysts, electrodes and membranes. Here we combine unique specimen design, record atomic resolution in situ electron microscopy, and artificial intelligence-enabled analysis to achieve a step change in quantitative understanding of interfacial atomic behaviour. We create the first graphene liquid cells with organic solvents and employ them to track over 106 gold adatoms and clusters at a graphene surface immersed in acetone and cyclohexanone. We reveal dynamic correlated behaviour of gold adatom monomers, dimers, trimers and clusters, strongly influenced by each other, the solvent properties, and the atomic lattice of the substrate, in good agreement with theoretical calculations. We use the results to interpret differences in catalytic activity towards the industrially important acetylene hydrochlorination reaction. This new capability for exploration of atomic scale chemistry could enable rational design of future catalysts, membranes and electrodes with improved functionality.

cond-mat.mtrl-sci

Tunnel junctions based on interfacial 2D ferroelectrics

Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions (FTJ) with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing fabrication of diverse FTJ devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials and its understanding is an important milestone for future development of optoelectronic devices based on sliding ferroelectricity.

cond-mat.mes-hall