arXiv subjects

Hui Ying Yang

Publications and source records attributed to Hui Ying Yang.

11 recordsLinked to original sources

arXiv2023

Towards Sustainable Ultrawide Bandgap Van der Waals Materials: An ab initio Screening Effort

The sustainable development of next-generation device technology is paramount in the face of climate change and the looming energy crisis. Tremendous efforts have been made in the discovery and design of nanomaterials that achieve device-level sustainability, where high performance and low operational energy cost are prioritized. However, many of such materials are composed of elements that are under threat of depletion and pose elevated risks to the environment. The role of material-level sustainability in computational screening efforts remains an open question thus far. Here we develop a general van der Waals materials screening framework imbued with sustainability-motivated search criteria. Using ultrawide bandgap (UWBG) materials as a backdrop -- an emerging materials class with great prospects in dielectric, power electronics, and ultraviolet device applications, we demonstrate how this screening framework results in 25 sustainable UWBG layered materials comprising only of low-risks elements. Our findings constitute a critical first-step towards reinventing a more sustainable electronics landscape beyond silicon, with the framework established in this work serving as a harbinger of sustainable 2D materials discovery.

cond-mat.mtrl-sci↗

arXiv2020

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionally large SBH slope parameter of S=0.7 is obtained, which outperform the vast majority of other 2D semiconductors. Such surprising behavior arises from the unique morphology of MoSi$_2$N$_4$ and WSi$_2$N$_4$. The outlying Si-N layer forms a native atomic layer that protects the semiconducting inner-core from the perturbance of metal contacts, thus suppressing the FLP. Our findings reveal the potential of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as a novel 2D material platform for designing high-performance and energy-efficient 2D nanodevices.

cond-mat.mes-hall↗

arXiv2020

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green's function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type doping in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials.

cond-mat.mes-hall↗

arXiv2018

Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets

Hexagonal boron nitride (h-BN) is a two dimensional (2D) layered insulator with superior dielectric performance that offers excellent interaction with other 2D materials (e.g. graphene, MoS2). Large-area h-BN can be readily grown on metallic substrates via chemical vapor deposition (CVD), but the impact of local inhomogeneities on the electrical properties of the h-BN and their effect in electronic devices is unknown. Here it is shown that the electrical properties of h-BN stacks grown on polycrystalline Pt vary a lot depending on the crystalline orientation of the Pt grain, but within the same grain the electrical properties of the h-BN are very homogeneous. The reason is that the thickness of the CVD-grown h-BN stack is different on each Pt grain. Conductive atomic force microscopy (CAFM) maps show that the tunneling current across the h-BN stack fluctuates up to 3 orders of magnitude from one Pt grain to another. However, probe station experiments reveal that the variability of electronic devices fabricated within the same Pt grain is surprisingly small. As cutting-edge electronic devices are ultra-scaled, and as the size of the metallic substrate grains can easily exceed 100 {\mu}m (in diameter), CVD-grown h-BN stacks may be useful to fabricate electronic devices with low variability.

cond-mat.mtrl-sci↗

arXiv2018

Germagraphene as promising anode material for Lithium-ion batteries predicted from first-principles calculations

Finding electrode materials with high capacity is a key challenge for developing Lithium-ion batteries (LIBs). Graphene was once expected to be a promising candidate, but it turns out to be too inert to interact with Li. Here, by using the first-principles calculations, we predict that Germanium doped graphene, termed as Germagraphene which has been achieved in recent experiment, is a promising LIB anode material. We find that at the optimal Ge concentration, which corresponds to the chemical formula C17Ge, the specific capacity for Germagraphene can be as high as 1734 mAh/g, over four times larger than graphite. We show that the material is conductive before and after Li adsorption. We also investigate the diffusion process of Li on Germagraphene, and find that the diffusion barrier is low (~0.151 eV), implying fast Li diffusion. The calculated average intercalation potential is very low (~0.03 V), which is beneficial for increasing the working voltage for the full-cells. In addition, during the process of Li intercalation, the lattice change for the material is quite small (~0.48%), implying good cycle performance. These results suggest that Germagraphene could be a promising high-capacity anode material for LIBs.

cond-mat.mtrl-sci↗

arXiv2018

Three-dimensional honeycomb carbon: Junction line distortion and novel emergent fermions

Carbon enjoys a vast number of allotropic forms, each possessing unique properties determined by the lattice structures and bonding characters. Here, based on first-principles calculations, we propose a new three-dimensional carbon allotrope--hC28. We show that hC28 possesses exceptional energetic, dynamical, thermal, and mechanical stability. It is energetically more stable than most other synthesized or proposed carbon allotropes. The material has a relatively small bulk modulus, but is thermally stable at temperatures as high as 2000 K. The structural, mechanical, x-ray diffraction, and electronic properties are systematically investigated. Particularly, we show that its low-energy band structure hosts multiple unconventional emergent fermions, including the quadratic-contact-point fermions, the birefringent Dirac fermions, and the triple-point fermions. We construct effective models to characterize each kind of fermions. Our work not only discovers a new carbon allotropic form, it also reveals remarkable mechanical and electronic properties for this new material, which may pave the way towards both fundamental studies as well as practical applications.

physics.comp-ph↗

arXiv2018

Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials

We identify a new universality in the carrier transport of two-dimensional(2D)-material-based Schottky heterostructures. We show that the reversed saturation current ($\mathcal{J}$) scales universally with temperature ($T$) as $ \log(\mathcal{J}/T^{\beta}) \propto -1/T$, with $\beta = 3/2$ for lateral Schottky heterostructures and $\beta = 1$ for vertical Schottky heterostructures, over a wide range of 2D systems including nonrelativistic electron gas, Rashba spintronic system, single and few-layer graphene, transition metal dichalcogenides and thin-films of topological solids. Such universalities originate from the strong coupling between the thermionic process and the in-plane carrier dynamics. Our model resolves some of the conflicting results from prior works and is in agreement with recent experiments. The universal scaling laws signal the breakdown of $\beta=2$ scaling in the classic diode equation widely-used over the past 60 years. Our findings shall provide a simple analytical scaling for the extraction of the Schottky barrier height in 2D-material-based heterostructure, thus paving way for both fundamental understanding of nanoscale interface physics and applied device engineering.

cond-mat.mes-hall↗

arXiv2018

Hybrid Nodal Loop Metal: Unconventional Magnetoresponse and Material Realization

A nodal loop is formed by band crossing along a one-dimensional closed manifold, with each point on the loop a linear nodal point in the transverse dimensions and can be classified as type-I or type-II depending on the band dispersion. Here, we propose a class of nodal loops composed of both type-I and type-II points, which are hence termed as hybrid nodal loops. Based on firstprinciples calculations, we predict the realization of such loops in the existing electride material Ca2As. For a hybrid loop, the Fermi surface consists of coexisting electron and hole pockets that touch at isolated points for an extended range of Fermi energies, without the need for fine-tuning. This leads to unconventional magnetic responses, including the zero-field magnetic breakdown and the momentum space Klein tunneling observable in the magnetic quantum oscillations, as well as the peculiar anisotropy in the cyclotron resonance.

cond-mat.mes-hall↗

arXiv2017

Coexistence of four-band nodal rings and triply-degenerate nodal points in centrosymmetric metal diborides

Topological metals with protected band-crossing points have been attracting great interest. Here we report novel topological band features in a family of metal diboride materials. Using first- principles calculations, we show that these materials are metallic, and close to Fermi level, there appears coexistence of one pair of nodal rings and one pair of triply-degenerate nodal points (TNPs). The nodal ring here is distinct from the previously studied ones in that its formation requires four entangled bands, not just two as in previous cases, hence it is termed as a four-band nodal ring (FNR). Remarkably, we show that FNR features Dirac-cone-like surface states, in contrast to the usual drumhead surface states for two-band nodal rings. Due to the presence of inversion symmetry, the TNP here is also different from those discussed previously in inversion-asymmetric systems. Especially, when spin-orbit coupling is included, the TNP here transforms into a novel Dirac point that is close to the borderline between the type-I and type-II Dirac point categories. We discuss their respective symmetry protections, and construct effective models for their characterization. The large linear energy range (> 2 eV) in these materials should facilitate the experimental detection of the signatures of these nontrivial band crossings.

cond-mat.mes-hall↗

arXiv2016

Theoretical prediction of MoN2 monolayer as a high capacity electrode material for metal ion batteries

Benefited from the advantages on environmental benign, easy purification, and high thermal stability, the recently synthesized two-dimensional (2D) material MoN2 shows great potential for clean and renewable energy applications. Here, through first-principles calculations, we show that the monolayered MoN2 is promising to be a high capacity electrode material for metal ion batteries. Firstly, identified by phonon dispersion and exfoliation energy calculations, MoN2 monolayer is proved to be structurally stable and could be exfoliated from its bulk counterpart in experiments. Secondly, all the studied metal atoms (Li, Na and K) can be adsorbed on MoN2 monolayer, with both pristine and doped MoN2 being metallic. Thirdly, the metal atoms possess moderate/low migration barriers on MoN2, which ensures excellent cycling performance as a battery electrode. In addition, the calculated average voltages suggest that MoN2 monolayer is suitable to be a cathode for Li-ion battery and anodes for Na-ion and K-ion batteries. Most importantly, as a cathode for Li-ion battery, MoN2 possesses a comparable average voltage but a 1-2 times larger capacity (432 mA h g-1) than usual commercial cathode materials; as an anode for Na-ion battery, the theoretical capacity (864 mA h g-1) of MoN2 is 2-5 times larger than typical 2D anode materials such as MoS2 and most MXenes. Finally we also provide an estimation of capacities for other transition-metal dinitrides materials. Our work suggests that the transition-metal dinitrides MoN2 is an appealing 2D electrode materials with high storage capacities.

cond-mat.mtrl-sci↗

arXiv2016

Borophene as an extremely high capacity electrode material for Li-ion and Na-ion batteries

Two-dimensional (2D) materials as electrodes is believed to be the trend for future Li-ion and Na-ion batteries technologies. Here, by using first-principles methods, we predict that the recently reported borophene (2D born sheet) can serve as an ideal electrode material with high electrochemical performance for both Li-ion and Na-ion batteries. The calculations are performed on the two experimentally stable borophene structures, namely \b{eta}12 and \c{hi}3 structures. The optimized Li and Na adsorption sites are identified, and the host materials are found to maintain good electric conductivity before and after adsorption. Besides advantages including small diffusion barriers and low average open-circuit voltages, most remarkably, the storage capacity can be as high as 1984 mA h g-1 in \b{eta}12 borophene and 1240 mA h g-1 in \c{hi}3 borophene for both Li and Na, which is several times higher than the commercial graphite electrode and is the highest among all the 2D materials discovered to date. Our results highly support that borophenes can be appealing anode materials for both Li-ion and Na-ion batteries with extremely high power density.

cond-mat.mes-hall↗