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Hui-Qin Yu

Publications and source records attributed to Hui-Qin Yu.

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Improved Cryogenic Photodiode Optical Biasing for Low-Noise and Low-Jitter Superconducting Nanowire Single-Photon Detectors

We experimentally demonstrate an improved optical biasing scheme for superconducting nanowire single-photon detectors (SNSPDs), which employs a cryogenic InGaAs-InP photodiode (PD) as a local bias source. It is found that, under illumination from a stable external light source, this PD generates a stable photocurrent in a cryogenic environment (~2.3 K), with fluctuations in the photocurrent primarily attributed to fluctuations in the incident optical power. Furthermore, by screening and effectively blocking stray photons leaking from the PD, which give rise to background dark counts, we have achieved an SNSPD exhibiting an ultra-low intrinsic dark count rate of 1e-4 cps. Utilizing this improved optical biasing technique, our SNSPD achieved performance comparable to that obtained under conventional electrical biasing: a system detection efficiency of 80.7%, a background dark count rate of 32.6 cps, and a minimum timing jitter of 57.5 ps. These results indicate that cryogenic-PD-based optical biasing serves as a viable, low-noise, and low-jitter alternative to traditional electrical biasing. Moreover, this work offers useful design guidance for the future development of PD-based low-noise bias sources and for the construction of all-photonic SNSPD systems tailored for high-precision quantum photonics applications.

quant-ph

Impact of helium ion irradiation on the thermal properties of superconducting nanowire single-photon detectors

SNSPDs are indispensable for applications ranging from quantum information processing to deep-space optical communications, owing to their high detection efficiency, low dark counts, and excellent timing resolution. However, further improving the intrinsic detection efficiency (IDE) remains crucial for optimizing SNSPD performance. Ion irradiation has recently emerged as a powerful post-fabrication method to enhance SNSPD characteristics. Here, we studied the effects of He-ion irradiation on the thermal properties of NbN SNSPDs. We systematically examine the evolution of thermal boundary conductance as a function of ion fluence (0-1.1E17 ions/cm2), observing a 57% decrease from 127 to 54 W/m^2K^4 with increasing fluence, followed by saturation at approximately 9E16 ions/cm2. At this fluence, the minimum hotspot relaxation time measurements indicate a 41% increase, rising from 17 to 24 ps,while the electron-phonon interaction time decreases, with the magnitude of change depending on temperature and sample batch.TEM reveals defect formation at the NbN/SiO2 interface (6-8 nm) and He-bubble formation within the SiO2 layer (30-260 nm), contributing to the extended thermal relaxation time. These irradiation-induced modifications play a key role in enhancing the IDE of the treated devices. We further demonstrate a post-irradiation SNSPD showing a saturated IDE plateau at 2000 nm from 2.7 K to 28 mK, enabled by thermal modifications and a weakly wavelength-dependent avalanche-assisted mechanism. Our findings highlight ion irradiation as a valuable tool for thermal tailoring in SNSPDs and advance the understanding of detection physics and defect engineering in superconducting optoelectronics.

physics.app-ph

Millimeter-scale active area superconducting microstrip single-photon detector fabricated by ultraviolet photolithography

The effective and convenient detection of single photons via advanced detectors with a large active area is becoming significant for quantum and classical applications. This work demonstrates the fabrication of a superconducting microstrip single-photon detector (SMSPD) with a millimeter-scale active area via the use of ultraviolet (UV) photolithography. The performances of NbN SMSPDs with different active areas and strip widths are characterized. SMSPDs fabricated by UV photolithography and electron beam lithography with small active areas are also compared from the aspects of the switching current density and line edge roughness. Furthermore, an SMSPD with an active area of 1 mm * 1 mm is obtained via UV photolithography, and during operation at 0.85 K, it exhibits near-saturated internal detection efficiency at wavelengths up to 800 nm. At a wavelength of 1550 nm, the detector exhibits a system detection efficiency of ~5% (7%) and a timing jitter of 102 (144) ps, when illuminated with a light spot of ~18 (600) um in diameter, respectively.

physics.ins-det