arXiv subjects

Hui-Qiong Wang

Publications and source records attributed to Hui-Qiong Wang.

14 recordsLinked to original sources

arXiv2026

Emergent surface resonance from charge density wave symmetry breaking in TiSe2

Surface confined electronic states provide a fertile ground for discovering emergent phenomena that have no counterpart in the bulk, offering new routes to manipulate correlations, symmetry breaking, and dimensionality at the atomic scale. Here, we show that charge density wave (CDW) symmetry breaking can yield a surface states in 1T-TiSe2. Micro angle resolved photoemission spectroscopy resolves a sharp, two dimensional surface resonant state (SRS) that emerges within the CDW reconstructed low energy spectrum. The SRS exhibits notable temperature dependence and its spectral weight collapses around 160 K, while CDW transition temperature TCDW is commonly reported as 202 K. Slab DFT+U calculations reproduce a surface localized resonance when CDW folding brings valence and conduction states into near degeneracy, suggesting a correlation tuned, surface selective origin. These results point to a form of correlation-tuned surface resonance in a layered CDW compound and suggest a framework for engineering low dimensional quantum states in van der Waals materials via symmetry breaking and electronic structure tuning.

cond-mat.mtrl-sci↗

arXiv2025

Intercalation induced quasi-freestanding layer in TiSe$_2$

Angle-resolved photoemission spectroscopy is employed to study the electronic structure of bulk TiSe2 before and after doping with potassium impurities. A splitting in the conduction band into two branches is observed after room-temperature deposition. The splitting energy increases to approximately 130 meV when the sample is cooled to 40 K. One branch exhibits a non-dispersive two-dimensional feature, while other one shows the characteristics of three dimensional bulk band dispersion. Core level spectroscopy suggests that the K impurities predominantly occupy the intercalated sites within the van derWaals gap. The results indicate the formation of a quasi-freestandingTiSe2 layer. Additionally, doping completely suppresses the periodic lattice distortion in the surface region. These findings are further supported by density functional theory calculations, which compare the band structure of monolayer and bulk TiSe2 with experimental data. Thus, the dimensional and intrinsic electronic properties of 1T-TiSe2 can be controlled through the intercalation procedure used in this work.

cond-mat.mtrl-sci↗

arXiv2023

Advances of Machine Learning in Materials Science: Ideas and Techniques

In this big data era, the use of large dataset in conjunction with machine learning (ML) has been increasingly popular in both industry and academia. In recent times, the field of materials science is also undergoing a big data revolution, with large database and repositories appearing everywhere. Traditionally, materials science is a trial-and-error field, in both the computational and experimental departments. With the advent of machine learning-based techniques, there has been a paradigm shift: materials can now be screened quickly using ML models and even generated based on materials with similar properties; ML has also quietly infiltrated many sub-disciplinary under materials science. However, ML remains relatively new to the field and is expanding its wing quickly. There are a plethora of readily-available big data architectures and abundance of ML models and software; The call to integrate all these elements in a comprehensive research procedure is becoming an important direction of material science research. In this review, we attempt to provide an introduction and reference of ML to materials scientists, covering as much as possible the commonly used methods and applications, and discussing the future possibilities.

cond-mat.mtrl-sci↗

arXiv2023

The growth of 2D crystalline g-C3N4 films and the control of optoelectronic properties

g-C3N4 is a novel semiconductor photocatalyst material; however, the low specific surface area and rapid carrier compliance hinder its photocatalytic performance. On the other hand, the synthesis of 2D g-C3N4 with high crystallinity remains challenging. Here, we report the growth of 2D crystalline g-C3N4 films with thicknesses up to 100 nm on the indium tin oxide substrates by chemical vapor deposition. The films show high quality, as shown by scanning electron microscopy and X-ray diffraction, and exhibit intense fluorescence at room temperature. The optimal growth conditions, such as temperature and carrier gas flow rate, were achieved by analyzing their effects on the electronic structure through X-ray absorption spectra and X-ray photoelectron spectroscopy. By adding thiourea to the melamine precursors, we introduced N vacancies to achieve band gap modulation and promote carrier separation. This work provides guidelines for the further improvement of g-C3N4 performance and for extending its application in the field of photocatalytic devices.

physics.app-ph↗

arXiv2020

Tuning the Magnetic and Electronic Properties of Strontium Titanate by Carbon Doping

The magnetic and electronic properties of strontium titanate with different carbon dopant configurations are explored using first-principles calculations with a generalized gradient approximation (GGA) and the GGA+U approach. Our results show that the structural stability, electronic properties and magnetic properties of C-doped SrTiO3 strongly depend on the distance between carbon dopants. In both GGA and GGA+U calculations, the doping structure is mostly stable with a nonmagnetic feature when the carbon dopants are nearest neighbors, which can be ascribed to the formation of a C-C dimer pair accompanied by stronger C-C and weaker C-Ti hybridizations as the C-C distance becomes smaller. As the C-C distance increases, C-doped SrTiO3 changes from an n-type nonmagnetic metal to ferromagnetic/antiferromagnetic half-metal and to an antiferromagnetic/ferromagnetic semiconductor in GGA calculations, while it changes from a nonmagnetic semiconductor to ferromagnetic half-metal and to an antiferromagnetic semiconductor using the GGA+U method. Our work demonstrates the possibility of tailoring the magnetic and electronic properties of C-doped SrTiO3, which might provide some guidance to extend the applications of strontium titanate as a magnetic or optoelectronic material.

cond-mat.mtrl-sci↗

arXiv2019

Review of borophene and its potential applications

Since two-dimensional boron sheet (borophene) synthesized on Ag substrates in 2015, research on borophene has grown fast in the fields of condensed matter physics, chemistry, material science, and nanotechnology. Due to the unique physical and chemical properties, borophene has various potential applications. In this review, we summarize the progress on borophene with a particular emphasis on the recent advances. First, we introduce the phases of borophene by experimental synthesis and theoretical predictions. Then, the physical and chemical properties, such as mechanical, thermal, electronic, optical and superconducting properties are summarized. We also discuss in detail the utilization of the borophene for wide ranges of potential application among the alkali metal ion batteries, Li-S batteries, hydrogen storage, supercapacitor, sensor and catalytic in hydrogen evolution, oxygen reduction, oxygen evolution, and CO2 electroreduction reaction. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development.

cond-mat.mtrl-sci↗

arXiv2017

New crystal structure prediction of fully hydrogenated borophene by first principles calculations

New crystal structures of fully hydrogenated borophene (borophane) have been predicted by first principles calculation. Comparing with the chair-like borophane (C-boropane) that has been reported in literature, we obtained four new borophane conformers with much lower total-energy. The most stable one, washboard-like borophane (W-borophane), has energy about 113.41 meV/atom lower than C-borophane. In order to explain the relative stability of different borophane conformers, the atom configuration, density of states, charge transfer, charge density distribution and defect formation energy of B-H dimer have been calculated. The results show that the charge transfer from B atoms to H atoms is crucial for the stability of borophane. In different borophane conformers, the bonding characteristics between B and H atoms are similar, but the B-B bonds in W-borophane are much stronger than that in C-borophane or other structures. In addition, we examined the dynamical stability of borophane conformers by phonon dispersions and found that the four new conformers are all dynamically stable. Finally the mechanical properties of borophane conformers along an arbitrary direction have been discussed. W-borophane possesses unique electronic structure (Dirac cone), good stability and superior mechanical properties. W-borophane has broad perspective for nano electronic device.

cond-mat.mtrl-sci↗

arXiv2016

High anisotropy of fully hydrogenated borophene

We have studied the mechanical properties and phonon dispersions of fully hydrogenated borophene (borophane) under strains by first principles calculations. Uniaxial tensile strains along the a- and b-direction, respectively, and biaxial tensile strain have been considered. Our results show that the mechanical properties and phonon stability of borophane are both highly anisotropic. The ultimate tensile strain along the a-direction is only 0.12, but it can be as large as 0.30 along the b-direction. Compared to borophene and other 2D materials (graphene, graphane, silicene, silicane, h-BN, phosphorene and MoS2), borophane presents the most remarkable anisotropy in in-plane ultimate strain, which is very important for strain engineering. Furthermore, the phonon dispersions under the three applied strains indicate that borophane can withstand up to 5% and 15% uniaxial tensile strain along the a- and b-direction, respectively, and 9% biaxial tensile strain, indicating that mechanical failure in borophane is likely to originate from phonon instability.

cond-mat.mtrl-sci↗

arXiv2015

High thermal conductivity of hexagonal boron nitride laminates

Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron nitride has already been acknowledged and these materials have been suggested as novel core materials for thermal management in electronics. However, it was not clear if mass produced flakes of hexagonal boron nitride would allow one to achieve an industrially-relevant value of thermal conductivity. Here we demonstrate that laminates of hexagonal boron nitride exhibit thermal conductivity of up to 20 W/mK, which is significantly larger than that currently used in thermal management. We also show that the thermal conductivity of laminates increases with the increasing volumetric mass density, which creates a way of fine-tuning its thermal properties.

cond-mat.mtrl-sci↗

arXiv2015

Force and heat current formulas for many-body potentials in molecular dynamics simulation with applications to thermal conductivity calculations

We derive expressions of interatomic force and heat current for many-body potentials such as the Tersoff, the Brenner, and the Stillinger-Weber potential used extensively in molecular dynamics simulations of covalently bonded materials. Although these potentials have a many-body nature, a pairwise force expression that follows Newton's third law can be found without referring to any partition of the potential. Based on this force formula, a stress applicable for periodic systems can be unambiguously defined. The force formula can then be used to derive the heat current formulas using a natural potential partitioning. Our heat current formulation is found to be equivalent to most of the seemingly different heat current formulas used in the literature, but to deviate from the stress-based formula derived from two-body potential. We validate our formulation numerically on various systems descried by the Tersoff potential, namely three-dimensional silicon and diamond, two-dimensional graphene, and quasi-one-dimensional carbon nanotube. The effects of cell size and time used in the simulation are examined.

cond-mat.mes-hall↗

arXiv2014

Evolution Process of Wurtzite ZnO Films on Cubic MgO (001) Substrates: a Structural, Optical and Electronic Investigation of the Misfit Structures

The interface between hexagonal ZnO films and cubic MgO (001) substrates, fabricated through molecular beam epitaxy, are thoroughly investigated. X-ray diffraction and (scanning) transmission electron microscopy reveal that, at the substrate temperature above 200 degree C, the growth follows the single [0001] direction; while at the substrate below 150 degree C, the growth is initially along [0001] and then mainly changes to [0-332] variants beyond the thickness of about 10 nm. Interestingly, a double-domain feature with a rotational angle of 30 degree appears for the growth along [0001] regardless of the growth temperature, experimentally demonstrated the theoretical predictions for occurrence of double rotational domains in such a heteroepitaxy [Grundmann et al, Phys. Rev. Lett. 105, 146102 (2010)]. It is also found that, the optical transmissivity of the ZnO film is greatly influenced by the mutation of growth directions, stimulated by the bond-length modulations, as further determined by X-ray absorption Spectra (XAS) at Zn K edge. The XAS results also show the evolution of 4pxy and 4pz states in the conduction band as the growth temperature increases. The results obtained from this work can hopefully promote the applications of ZnO in advanced optoelectronics for which its integration with other materials of different phases is desirable.

cond-mat.mtrl-sci↗

arXiv2002

Possible complete miscibility of $(BN)_x(C_2)_{1-x}$ alloys

The stabilities of $(BN)_x(C_2)_{1-x}$ alloys and related superlattices are investigated by ab initio pseudopotential calculations. We find that the $(BN)_1/(C_2)_1$ superlattices in (111) orientations have the lowest formation energy among many short-range ordered $BNC_2$ structures due to the smallest number of B-C and C-N bonds. Based on the calculated formation energies at several compositions and for various ordered structures and assuming thermodynamic equilibrium, the solid solution phase diagram of $(BN)_x(C_2)_{1-x}$ alloys is constructed. We find that the complete miscibility of $(BN)_x(C_2)_{1-x}$ alloys is possible, which is in contrast with previous theoretical predictions but in agreement with experimental reports.

cond-mat.mtrl-sci↗

arXiv2002

Structural and electronic properties of Al nanowires: an ab initio pseudopotential study

The stability and electronic structure of a single monatomic Al wire has been studied using the ab initio pseudopotential method. The Al wire undergoes two structural rearrangements under compression, i.e., zigzag configurations at angles of $140^o$ and $60^o$. The evolution of electronic structures of the Al chain as a function of structural phase transition has been investigated. The relationship between electronic structure and geometric stability is also discussed. The 2p bands in the Al nanowire are shown to play a critical role in its stability. The effects of density functionals (GGA and LDA) on cohesive energy and bond length of Al nanostructures (dimmer, chains, and monolayers) are also examined. The link between low dimensional 0D structure (dimmer) to high dimensional 3D bulk Al is estimated. An example of optimized tip-suspended finite atomic chain is presented to bridge the gap between hypothetical infinite chains and experimental finite chains.

cond-mat.mtrl-sci↗

arXiv2002

Trends in bonding configuration at SiC/III-V semiconductor interfaces

The structural and electronic properties of interfaces between beta-SiC and III-V semiconductors are studied by first-principles calculations. Favorable bonding configurations are found to form between Si-V and C-III (model A) for BN, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs and InSb, and Si-III and C-V (model B) for BP, BAs, BSb, AlSb and GaSb. The relationship between formation energy difference and lattice constant difference as well as charge distribution for these two models is found. The origin of bonding configurations can be explained in terms of the ionicity of III-V semiconductors, electrostatic effect, charge distribution and band-structure component.

cond-mat.mtrl-sci↗