arXiv subjects

Huikai Cheng

Publications and source records attributed to Huikai Cheng.

2 recordsLinked to original sources

arXiv2025

Layer controlled orbital selective Mott transition in monolayer nickelate

Dimensionality and electronic correlations are crucial elements of many quantum material properties. An example is the change of the electronic structure accompanied by the loss of quasiparticles when a metal is reduced from three dimensions to a lower dimension, where the Coulomb interaction between carriers becomes poorly screened. Here, using angle-resolved photoemission spectroscopy (ARPES), we report an orbital-selective decoherence of spectral density in the perovskite nickelate LaNiO3 towards the monolayer limit. The spectral weight of the dz2 band vanishes much faster than that of the dx2-y2 band as the thickness of the LaNiO3 layer is decreased to a single unit cell, indicating a stronger correlation effect for the former upon dimensional confinement. Dynamical mean-field theory (DMFT) calculations show an orbital-selective Mott transition largely due to the localization of dz2 electrons along the c axis in the monolayer limit. This orbital-selective correlation effect underpins many macroscopic properties of nickelates, such as metal-to-insulator transition and superconductivity, where most theories are built upon a dx2-y2-dz2 two-band model.

cond-mat.str-el↗

arXiv2022

Room-Temperature Valence Transition in a Strain-Tuned Perovskite Oxide

Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr1-xCaxCoO3). Here, we show that in thin films of the complex perovskite (Pr1-yYy)1-xCaxCoO3-δ, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point.

cond-mat.mtrl-sci↗