arXiv subjects

Huili Grace Xing

Publications and source records attributed to Huili Grace Xing.

At least 19 recordsLinked to original sources

arXiv2026

Loss Mechanisms in Cryogenic Microwave Epitaxial AlN Resonators

Epitaxial aluminum nitride (AlN) thin-film bulk acoustic resonators (FBARs) enable low loss filtering for future 6G systems. They also provide a compact approach for qubit sensing at cryogenic temperatures. However, these devices are rarely characterized systematically from room temperature to cryogenic temperatures, and the mechanisms that limit their cryogenic performance remain unclear. In this work, we study a 15.6 GHz epitaxial AlN FBAR from room temperature to cryogenic temperatures to identify losses from the AlN film and those introduced by the electrodes, anchors, and other device layers. Small signal RF measurements from 294 K down to 6.5 K show an increase in the raw Qmax from 363 to 1589. A temperature dependent model that includes phonon phonon scattering, thermoelastic damping, dielectric loss, electrical loss, and anchor loss helps explain the measured Q(T) trend and identifies a transition from the Landau Rumer to the Akhiezer regime near 270 K. The model indicates that acoustic energy leakage through the anchors limits Q at cryogenic temperatures, while electrical loss dominates at higher temperatures. These results point to two routes toward higher cryogenic Q: better acoustic isolation of the anchors and lower loss electrodes, including superconducting electrodes. Improved anchor design benefits both high frequency 6G filters and cryogenic quantum microwave circuits, while superconducting electrodes are particularly useful for cryogenic operation.

cond-mat.mes-hall↗

arXiv2026

High-Q superconducting microwave resonators using MBE titanium nitride

Using molecular beam epitaxy, we have realized thin films of titanium nitride (TiN) on c-plane sapphire that exhibit the lowest observed full-width at half maximum X-ray rocking curve width of 18 arcsec. Though the (111) oriented TiN exhibits an abrupt and crystalline interface with sapphire, for the first time we observe sub-surface defects in the sapphire substrate, which nucleate structural defects in the epitaxial TiN layer. Using quarter-wavelength coplanar waveguide (CPW) resonators in a 3 \textmu m/6 \textmu m/3 \textmu m gap/strip/gap lines in a hanger geometry, we find the internal quality factor of the TiN resonators to be $>10^{6}$ in the single-photon $\langle n \rangle \sim 1$ limit at 5.8 GHz and 10 mK, rising to $>20 \times 10^{6}$ at $\langle n \rangle \sim 10^{6}$. The results are of high interest for applications of superconducting TiN in several areas, and provide a path towards epitaxial Josephson junctions with crystalline barriers in the future for high coherence qubits.

cond-mat.supr-con↗

arXiv2026

Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy

Alloys of AlN have rapidly emerged as a material platform for nonlinear optics. In this paper, we measure the second-order optical nonlinearity of AlScN films grown directly on nitrided c-plane sapphire by molecular beam epitaxy. This direct growth approach, which bypasses a thick AlN buffer layer, allows us to isolate the true nonlinear response of the AlScN film. Our results show a large enhancement of d31, but a suppression of d33 in AlScN films compared to AlN. We observe that d31 can be as high as 4.92 pm/V , which is 60 times larger than that of AlN. The development of AlScN-based photonic devices can enable energy-efficient nonlinear optical operations that can be epitaxially integrated with electronic and photonic devices based on Si, GaN and AlN.

cond-mat.mtrl-sci↗

arXiv2026

Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680$^{\circ}$C by molecular beam epitaxy on a Ga-polar GaN(0001) template substrate under Ga-rich, N-rich, and no-flux conditions (i.e., Mn $δ$ doping). Mn incorporation was highest under N-rich condition, lowest under Ga-rich condition, and intermediate in the absence of Ga and N fluxes. For the growth conditions examined in this study, the corresponding Mn sticking coefficients, relative to that of the N-rich condition, were determined to be 0.31 for no-flux growth and 0.01 for the Ga-rich growth.

cond-mat.mtrl-sci↗

arXiv2026

Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures

AlYN and AlScN have recently emerged as promising nitride materials that can be integrated with GaN to form two-dimensional electron gases (2DEGs) at heterojunctions. Electron transport properties in these heterostructures have been enhanced through careful design and optimization of epitaxial growth conditions. In this work, we report for the first time Shubnikov-de Haas (SdH) oscillations of 2DEGs in AlYN/GaN and AlScN/GaN heterostructures, grown by metal-organic chemical vapor deposition. SdH oscillations provide direct access to key 2DEG parameters at the Fermi level: (1) carrier density, (2) electron effective mass (m* ~ 0.24 me for AlYN/GaN and m* ~ 0.25 me for AlScN/GaN), and (3) quantum scattering time (~ 68 fs for AlYN/GaN and ~ 70 fs for AlScN/GaN). These measurements of fundamental transport properties provide critical insights for advancing emerging nitride semiconductors for future high-frequency and power electronics.

cond-mat.mes-hall↗

arXiv2025

Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN

UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$Ω\cdot$cm$^2$ at the highest current density is achieved. The LED heterostructure has a high refractive index waveguide core surrounded by n- and p-cladding layers similar to a laser diode designed for mode confinement at 270 nm to facilitate edge emission and collection of photons. Edge-emitting devices are made by cleaving the fabricated LEDs along the $m$-plane of the wurtzite crystal. Electrical injection results in emission of high energy 4.7 eV photons that are collected from the cleaved edge of the LEDs corresponding to the optical bandgap of the AlGaN active region. The contribution of power dissipation across the n- and p-regions of the diode is discussed. The n-contact resistance to n-AlGaN is identified as the largest contributor to the series resistance of the LED in the present generation of devices.

physics.optics↗

arXiv2025

Low Resistance Non-Alloyed Ohmic Contacts to High Al Composition n-type AlGaN

Ohmic contacts to high (>70\%) Al content n-type Al$_x$Ga$_{1-x}$N ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a lift-off process and high temperature ($>700^\circ$C) thermal alloying. These conditions often result in significant structural deformations of the fabricated structures and impose a harsh thermal budget on all other aspects of the device. Here, we report the fabrication of \textit{non-alloyed} \textit{as-deposited} ohmic contacts to 71\% n+AlGaN ($E_\text{g}\sim5.4$~eV) with a free carrier concentration of roughly $7\times 10^{19}$~cm$^{-3}$ and a resistivity of 4 - 5.5 m$Ω$cm (among the lowest reported for Al$_{0.71}$Ga$_{0.29}$N) with linear $I-V$ characteristics and a contact resistivity of $ρ_\text{c}=(4.4\pm1.0)\times10^{-4}$~$Ω$cm$^2$ (measured at zero voltage). Contacts with this quality are formed by two separate fabrication schemes: (i) metal-first patterning, and (ii) lift-off with an oxygen asher descum prior to metal deposition. Given the low threading dislocation density in the single-crystal AlN substrate used for epitaxy, the smooth morphology of the contacted epitaxial surface, and the non-alloyed nature of the contacts, this contact resistivity is attributed purely to thermionic field emission through the metal-semiconductor junction. Contact resistivity extraction at low current injection enables us to model these results using a thermionic field-emission model of contact resistivity, yielding a barrier height for Ti/Al$_{0.71}$Ga$_{0.29}$N of $(0.81\pm0.02)$ eV.

cond-mat.mtrl-sci↗

arXiv2025

Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire

We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of $0.5^\text{o}$, $2^\text{o}$, $4^\text{o}$, and $10^\text{o}$ towards m-axis. X-ray diffraction (XRD) scans reveal that the full width at half maximum of the rocking curves around the 1 1 1 reflection of these NbN films decreases with increasing miscut. Starting from 76 arcsecs on $0.5^\text{o}$ miscut, the FWHM reduces to almost 20 arcsecs on $10^\text{o}$ miscut sapphire indicating improved structural quality. Scanning transmission electron microscopy (STEM) images indicate that NbN on c-sapphire has around 10 nm critical thickness, irrespective of the substrate miscut, above which it turns columnar. The improved structural property is correlated with a marginal increment in superconducting transition temperature $T_\text{c}$ from 12.1 K for NbN on $0.5^\text{o}$ miscut sapphire to 12.5 K for NbN on $10^\text{o}$ miscut sapphire.

cond-mat.supr-con↗

arXiv2025

High Mobility Multiple-Channel AlScN/GaN Heterostructures

Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two dimensional electron gases (2DEGs) in single- and multi-channel AlScN/GaN heterostructures grown by molecular beam epitaxy, and demonstrate the lowest sheet resistance among AlScN-based systems reported to date. Assorted schemes of GaN/AlN interlayers are first introduced in single-channel structures between AlScN and GaN to improve conductivity, increasing electron mobility up to $1370$ cm$^{2}$/V$\cdot$s at 300 K and $4160$ cm$^{2}$/V$\cdot$s at 77 K, reducing the sheet resistance down to 170 $Ω/\square$ and 70 $Ω/\square$ respectively. These improvements are then leveraged in multi-channel heterostructures, reaching sheet resistances of 65 $Ω/\square$ for three channels and 45 $Ω/\square$ for five channels at 300 K, further reduced to 21 $Ω/\square$ and 13 $Ω/\square$ at 2 K, respectively, confirming the presence of multiple 2DEGs. Structural characterization indicates pseudomorphic growth with smooth surfaces, while partial barrier relaxation and surface roughening are observed at high scandium content, with no impact on mobility. This first demonstration of ultra-low sheet resistance multi-channel AlScN/GaN heterostructures places AlScN on par with state-of-the-art multi-channel Al(In)N/GaN systems, showcasing its capacity to advance existing and enable new high-speed, high-power electronic devices.

cond-mat.mtrl-sci↗

arXiv2025

A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors

A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in polar heterostructures. Focusing on the active region of devices that employ a multiple quantum-well layout, the total electron and hole populations are estimated from fundamental electrostatic and quantum mechanical principles. Hole gas depletion techniques, revolving around intentional donor doping, are modeled and evaluated, culminating in a generalized closed-form equation for the mobile carrier density across the doping schemes examined. The utility of this model is illustrated for the III-Nitride material system, exploring AlGaN/GaN, AlInN/GaN and AlScN/GaN heterostructures. The compact framework provided herein considerably elucidates and enhances the efficiency of multi-layered transistor design.

physics.app-ph↗

arXiv2025

Generalized quantum limits of electrical contact resistance and thermal boundary resistance

The importance of electrical contact resistance and thermal boundary resistance has increased dramatically as devices are scaled to atomic limits. The use of a rich range of materials with various bandstructures (e.g. parabolic, conical), and in geometries exploiting various dimensionalities (e.g. 1D wires, 2D sheets, and 3D bulk) will increase in the future. Here we derive a single general expression for the quantum limit of electrical contact resistivity for various bandstructures and all dimensions. A corresponding result for the quantum limit of thermal boundary resistance is also derived. These results will be useful to quantitatively co-design, benchmark, and guide the lowering of electrical and thermal boundary resistances for energy efficient devices.

cond-mat.mtrl-sci↗

arXiv2025

XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates

AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effect transistors, analogous to silicon-on-insulator technology. Unlike SiO$_2$/Si/SiO$_2$, AlN/GaN/AlN can be grown fully epitaxially, enabling high carrier mobilities suitable for high-frequency applications. However, developing these heterostructures and related devices has been hindered by challenges in strain management, polarization effects, defect control and charge trapping. Here, the AlN single-crystal high electron mobility transistor (XHEMT) is introduced, a new nitride transistor technology designed to address these issues. The XHEMT structure features a pseudomorphic GaN channel sandwiched between AlN layers, grown on single-crystal AlN substrates. First-generation XHEMTs demonstrate RF performance on par with the state-of-the-art GaN HEMTs, achieving 5.92 W/mm output power and 65% peak power-added efficiency at 10 GHz under 17 V drain bias. These devices overcome several limitations present in conventional GaN HEMTs, which are grown on lattice-mismatched foreign substrates that introduce undesirable dislocations and exacerbated thermal resistance. With the recent availability of 100-mm AlN substrates and AlN's high thermal conductivity (340 W/m$\cdot$K), XHEMTs show strong potential for next-generation RF electronics.

cond-mat.mtrl-sci↗

arXiv2025

Epitaxial high-K AlBN barrier GaN HEMTs

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities of more than 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of 0.14 S/mm. Transistor performance in this preliminary realization is limited by the contact resistance. Capacitance-voltage measurements reveal that introducing 7 % B in the epitaxial AlBN barrier on GaN boosts the relative dielectric constant of AlBN to 16, higher than the AlN dielectric constant of 9. Epitaxial high-K barrier AlBN/GaN HEMTs can thus extend performance beyond the capabilities of current GaN transistors.

physics.app-ph↗

arXiv2025

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates

We report the observation of Shubnikov-de Haas (SdH) oscillations in coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including both undoped and $δ$-doped structures. SdH measurements reveal a single subband occupation in the undoped GaN QW and two subband occupation in the $δ$-doped GaN QW. More importantly, SdH oscillations enable direct measurement of critical two-dimensional electron gas (2DEG) parameters at the Fermi level: carrier density and ground state energy level, electron effective mass ($m^* \approx 0.289\,m_{\rm e}$ for undoped GaN QW and $m^* \approx 0.298\,m_{\rm e}$ for $δ$-doped GaN QW), and quantum scattering time ($τ_{\rm q} \approx 83.4 \, \text{fs}$ for undoped GaN QW and $τ_{\rm q} \approx 130.6 \, \text{fs}$ for $δ$-doped GaN QW). These findings provide important insights into the fundamental properties of 2DEGs that are strongly quantum confined in the thin GaN QWs, essential for designing nitride heterostructures for high-performance electronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Quantum oscillations of holes in GaN

GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transport in GaN. Here, we present the first observation of quantum oscillations of holes in GaN. Shubnikov-de Haas (SdH) oscillations in hole resistivity are observed in a quantum-confined two-dimensional hole gas at a GaN/AlN interface, where polarization-induced doping overcomes thermal freeze-out, and a sharp and clean interface boosts the hole mobility enough to unmask the quantum oscillations. These holes degenerately occupy the light and heavy hole bands of GaN and have record-high mobilities of ~1900 cm2/Vs and ~400 cm2/Vs at 3K, respectively. We use magnetic fields up to 72 T to resolve SdH oscillations of holes from both valence bands to extract their respective sheet densities, quantum scattering times, and the effective masses of light holes (0.5-0.7 m0) and heavy holes (1.9 m0). SdH oscillations of heavy and light holes in GaN constitute a direct metrology of valence bands and open new venues for quantum engineering in this technologically important semiconductor. Like strained silicon transistors, strain-engineering of the valence bands of GaN is predicted to dramatically improve hole mobilities by reducing the hole effective mass, a proposal that can now be explored experimentally, particularly in a fully fabricated transistor, using quantum oscillations. Furthermore, the findings of this work suggest a blueprint to create 2D hole gases and observe quantum oscillations of holes in related wide bandgap semiconductors such as SiC and ZnO in which such techniques are not yet possible.

cond-mat.mes-hall↗

arXiv2024

Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas

We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN heterostructure. Previous transport studies in GaN 2DHGs have reported a two-fold reduction in 2DHG carrier density from room to cryogenic temperature. We demonstrate that this apparent drop in carrier density is an artifact of assuming one species of carriers when interpreting Hall effect measurements. Using an appropriate two-carrier model, we resolve light hole (LH) and heavy hole (HH) carrier densities congruent with self-consistent Poisson-k$\cdot$p simulations and observe an LH mobility of $\sim$1400 cm$^2$/Vs and HH mobility of $\sim$300 cm$^2$/Vs at 2 K. This report constitutes the first experimental signature of LH band conductivity reported in GaN.

physics.app-ph↗

arXiv2024

In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system

In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successful etching of both heteroepitaxial (-201)-oriented and homoepitaxial (010)-oriented \b{eta}-Ga2O3 films over a wide range of substrate temperature, TBCl molar flows, and reactor pressures. We identify that the likely etchant is HCl (g) formed by the pyrolysis of TBCl in the hydrodynamic boundary layer above the substrate. The temperature dependence of the etch rate reveals two distinct regimes characterized by markedly different apparent activation energies. The extracted apparent activation energies suggest that at temperatures below ~800 °C the etch rate is likely limited by desorption of etch products. The relative etch rates of heteroepitaxial (-201) and homoepitaxial (010) \b{eta}-Ga2O3 were observed to scale by the ratio of the surface energies indicating an anisotropic etch. For (010) homoepitaxial films, relatively smooth post-etch surface morphology was achieved by tuning the etching parameters.

cond-mat.mtrl-sci↗

arXiv2024

Leveraging both faces of polar semiconductor wafers for functional devices

Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium) face of gallium nitride has been used for photonic devices such as LEDs and lasers. Though the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high electron mobility transistors due to favorable polarization discontinuities. In this work we introduce dualtronics, showing that it is possible to make photonic devices on the cation face, and electronic devices on the anion face, of the same semiconductor wafer. This opens the possibility for leveraging both faces of polar semiconductors in a single structure, where electronic, photonic, and acoustic properties can be implemented on opposite faces of the same wafer, dramatically enhancing the functional capabilities of this revolutionary semiconductor family.

physics.app-ph↗