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Huili Liang

Publications and source records attributed to Huili Liang.

6 recordsLinked to original sources

Giant intrinsic dichroism in \b{eta}-Ga2O3 enables filter-free, high-fidelity polarization division multiplexing

Conventional polarization detection relies on external filters, which incur significant efficiency loss and polarization crosstalk, especially in the deep ultraviolet band where subwavelength nanofabrication is challenging. Here, we report that monoclinic \b{eta}-Ga2O3 exhibits intrinsic giant polarization dichroism, allowing near-ideal polarization photodetection without external optical elements and coherent polarization-division multiplexing (PDM) capability. The giant dichroism originates from the crystallographic symmetry-driven selectivity of optical transitions, which, combined with a large valence band splitting, results in vastly distinct absorption for orthogonal polarizations. A theoretical analysis of the transition selection rules in \b{eta}-Ga2O3 reveals only the E//c-polarized vb1-to-conduction band transition is activated, within the 245-258 nm spectral window. An admirable polarization ratio surpassing 500 and a polarization crosstalk ratio below 0.2% is hence achieved. The polarization-sensitive photodetector exhibits a high responsivity of 73 A/W and fast response (20 ms). Furthermore, we showcase its practical utility in PDM free-space communication, successfully decoding encoded optical signals, and demonstrate its capability for high-fidelity Stokes vector retrieval. The intrinsic anisotropy of \b{eta}-Ga2O3, dictated by its crystal symmetry, lays the groundwork for filter-free, high-fidelity polarization polarimetry. This work further paves the way for a general design principle in next-generation optoelectronics that harness polarization transition selection rules.

physics.app-ph

Topological Hall Effect Driven by Short-Range Magnetic Orders in EuZn$_2$As$_2$

Short-range (SR) magnetic orders such as magnetic glass orders or fluctuations in a quantum system usually host exotic states or critical behaviors. As the long-range (LR) magnetic orders, SR magnetic orders can also break time-reversal symmetry and drive the non-zero Berry curvature leading to novel transport properties. In this work, we report that in EuZn$_2$As$_2$ compound, besides the LR A-type antiferromagnetic (AF) order, the SR magnetic order is observed in a wide temperature region. The magnetization measurements and electron spin resonance (ESR) measurements reveal the ferromagnetic (FM) correlations for this SR magnetic order which results in an obvious anomalous Hall effect above the AF transition. Moreover the ESR results reveal that this FM SR order coexists with LR AF order exhibiting anisotropic magnetic correlations below the AF transition. The interactions of LR and SR magnetism evolving with temperature and field can host non-zero spin charility and berry curvature leading the additional topological Hall contribution even in a centrosymmetric simple AF system. Our results indicate that EuZn$_2$As$_2$ is a fertile platform to investigate exotic magnetic and electronic states.

cond-mat.str-el

Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector

The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $β$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $β$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $β$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $β$-Ga$_2$O$_3$, including GaN, AlN and SiC.

physics.app-ph

Flexible transparent high-voltage diodes for energy management in wearable electronics

This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with their applications as building blocks of energy management systems in wearable electronics where triboelectric nanogenerators (TENGs) are used as power source. Both experimental results and technology computer aided design (TCAD) simulations suggest that Rr and Vb can be modulated by the offset length in an opposite tendency. The low reverse leakage current (fA/MICRON) guarantees an ultra-low power consumption in standby mode, which is a core issue in wearable device applications. Besides the unprecedented electrical performance, the diodes exhibit good mechanical robustness with minimal degradation throughout the strain and fatigue tests. By incorporating these high-voltage diodes into half-wave and full-wave rectifier circuits, the high alternating current (AC) output voltage of TENGs is successfully rectified into direct current (DC) voltage and charged into supercapacitors (SCs), indicating their high integration and compatibility with TENGs, and thus their promising applications in various wearable electronic systems.

physics.app-ph

Flexible Transparent Field-Effect Diodes Fabricated at Low-Temperature with All Oxide Materials

Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visible spectra range and electrically robust while mechanically bending. Distinguished from other diodes, these diodes utilize diode-connected thin-film transistor architecture and follow field-effect principles.

cond-mat.mtrl-sci

Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0E19 F/cm3.The dramatically increased carrier concentration (2.85E17 cm-3 vs ~1014 cm-3) and decreased resistivity (129 ohm.cm vs ~10E6 ohm cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89E9 cm Hz1/2/W to 3.58eE10 cm Hz1/2/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices.

cond-mat.mtrl-sci