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Huili Xing

Publications and source records attributed to Huili Xing.

14 recordsLinked to original sources
arXiv2023

An extension of process calculus for asynchronous communications between agents with epistemic states

It plays a central role in intelligent agent systems to model agent's epistemic state and its change. Asynchrony plays a key role in distributed systems, in which the messages transmitted may not be received instantly by the agents. To characterize asynchronous communications, asynchronous announcement logic (AAL) has been presented, which focuses on the logic laws of the change of epistemic state after receiving information. However AAL does not involve the interactive behaviours between an agent and its environment. Through enriching the well-known pi-calculus by adding the operators for passing basic facts and applying the well-known action model logic to describe agents' epistemic states, this paper presents the e-calculus to model epistemic interactions between agents with epistemic states. The e-calculus can be adopted to characterize synchronous and asynchronous communications between agents. To capture the asynchrony, a buffer pools is constructed to store the basic facts announced and each agent reads these facts from this buffer pool in some order. Based on the transmission of link names, the e-calculus is able to realize reading from this buffer pool in different orders. This paper gives two examples: one is to read in the order in which the announced basic facts are sent (First-in-first-out, FIFO), and the other is in an arbitrary order.

cs.AI↗
arXiv2022

Covariant-Contravariant Refinement Modal $μ$-calculus

The notion of covariant-contravariant refinement (CC-refinement, for short) is a generalization of the notions of bisimulation, simulation and refinement. This paper introduces CC-refinement modal $μ$-calculus (CCRML$^μ$) obtained from the modal $μ$-calculus system K$^μ$ by adding CC-refinement quantifiers, establishes an axiom system for CCRML$^μ$ and explores the important properties: soundness, completeness and decidability of this axiom system. The language of CCRML$^μ$ may be considered as a specification language for describing the properties of a system referring to reactive and generative actions. It may be used to formalize some interesting problems in the field of formal methods.

cs.LO↗
arXiv2022

Antiferromagnetic Spin Orientation and Magnetic Domain Structure in Epitaxially Grown MnN Studied using Optical Second Harmonic Generation

MnN is a centrosymmetric collinear antiferromagnet belonging to the transition metal nitride family with a high Neel temperature, a low anisotropy field, and a large magnetic moment per Mn atom. Despite several recent experimental and theoretical studies, the spin symmetry (magnetic point group) and magnetic domain structure of the material remain unknown. In this work, we use optical second harmonic generation (SHG) to study the magnetic structure of thin epitaxially-grown single-crystal (001) MnN films. Our work shows that spin moments in MnN are tilted away from the [001] direction and the components of the spin moments in the (001) plane are aligned along one of the two possible in-plane symmetry axes ([100] or [110]) resulting in a magnetic point group symmetry of 2/m1'. Our work rules out magnetic point group symmetries 4/mmm1' and mmm1' that have been previously discussed in the literature. Four different spin domains consistent with the 2/m1' magnetic point group symmetry are possible in MnN. A statistical model based on the observed variations in the polarization-dependent intensity of the second harmonic signal collected over large sample areas puts an upper bound of 0.65 microns on the mean domain size. Our results show that SHG can be used to probe the magnetic order in metallic antiferromagnets. This work is expected to contribute to the recent efforts in using antiferromagnets for spintronic applications.

cond-mat.mtrl-sci↗
arXiv2019

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga$_{0.83}$N/GaN TJs and UID GaN spacers to separate the optical mode from the heavily doped absorbing p-cladding regions. In such laser structures, polarization offsets at the electron blocking layer, spacer, and quantum barrier interfaces play discernable roles in carrier transport. By comparing a top-TJ structure to a bottom-TJ structure, and correlating features in the electroluminescence, capacitance-voltage, and current-voltage characteristics to unique signatures of the N- and Ga-polar polarization heterointerfaces in energy band diagram simulations, we identify that improved hole injection at low currents, and improved electron blocking at high currents, leads to higher injection efficiency and higher output power for the bottom-TJ device throughout 5 orders of current density (0.015 - 1000 A/cm$^2$). Moreover, even with the addition of a UID GaN spacer, differential resistances are state-of-the-art, below 7x10-4 $Ω$cm$^2$. These results highlight the virtues of the bottom-TJ geometry for use in high-efficiency laser diodes.

physics.app-ph↗
arXiv2018

Measurement of Ultrafast Dynamics of Photoexcited Carriers in $β$-Ga$_2$O$_3$ by Two-Color Optical Pump-Probe Spectroscopy

We report results from ultrafast two-color optical pump-probe spectroscopy on bulk $β$-Ga$_2$O$_3$. A two-photon absorption scheme is used to photoexcite carriers with the pump pulse and free-carrier absorption of the probe pulse is used to record the subsequent dynamics of the photoexcited carriers. Our results are consistent with carrier recombination via defect-assisted processes. We also observe transient polarization-selective optical absorption of the probe pulse by defect states under nonequilibrium conditions. A rate equation model for electron and hole capture by defects is proposed and used to explain the data. Whereas the rate constants for electron capture by defects are found to be temperature-independent, they are measured to be strongly temperature-dependent for hole capture and point to a lattice deformation/relaxation process accompanying hole capture. Our results shed light on the mechanisms and rates associated with carrier capture by defects in $β$-Ga$_2$O$_3$.

cond-mat.mtrl-sci↗
arXiv2017

MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures

Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy (PAMBE). Single peaked emission spectra is achieved with narrow full width at half maximum (FWHM) for three different light emitting diodes (LEDs) operating at 232 nm, 246 nm and 270 nm. 232 nm (5.34 eV) is the shortest EL emission wavelength reported so far using GaN as the light emitting material and employing polarization-induced doping.

cond-mat.mtrl-sci↗
arXiv2016

Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates

We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas (2DEG) density in excess of 2x10^13/cm2. Ohmic contacts to the 2DEG channel were formed by n+ GaN MBE regrowth process, with a contact resistance of 0.13 Ohm-mm. Raman spectroscopy using the quantum well as an optical marker reveals the strain in the quantum well, and strain relaxation in the regrown GaN contacts. A 65-nm-long rectangular-gate device showed a record high DC drain current drive of 2.0 A/mm and peak extrinsic transconductance of 250 mS/mm. Small-signal RF performance of the device achieved current gain cutoff frequency fT~120 GHz. The DC and RF performance demonstrate that bulk AlN substrates offer an attractive alternative platform for strained quantum well nitride transistors for future high-voltage and high-power microwave applications.

cond-mat.mtrl-sci↗
arXiv2015

Polarization-induced Zener Tunnel Diodes in GaN/InGaN/GaN Heterojunctions

By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

cond-mat.mes-hall↗
arXiv2011

High field transport in graphene

In this work, high field carrier transport in two dimensional (2D) graphene is investigated. Analytical models are applied to estimate the saturation currents in graphene, based on the high scattering rate of optical phonon emission. Non-equilibrium (hot) phonon effect was studied by Monte Carlo (MC) simulations. MC simulation confirms that hot phonon effects play a dominant role in current saturation in graphene. Current degradation due to elastic scattering events is much smaller compared to the hot phonon effect. Transient phenomenon as such as velocity overshoot was also studied using MC simulation. The simulation results shows promising potential for graphene to be used in high speed electronic devices by shrinking the channel length below 100nm if electrostatic control can be exercised in the absence of a band gap.

cond-mat.mtrl-sci↗
arXiv2008

Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering

The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons, and from acoustic phonons are as important as line edge roughness scattering. The relative importance of these scattering mechanisms varies with the temperature, Fermi level location, and the width of the ribbons. Based on the analysis, strategies for improvement of low-field mobility are described.

cond-mat.mtrl-sci↗
arXiv2008

Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

A theory is developed for interband tunneling in semiconducting carbon nanotube and graphene nanoribbon p-n junction diodes. Characteristic length and energy scales that dictate the tunneling probabilities and currents are evaluated. By comparing the Zener tunneling processes in these structures to traditional group IV and III-V semiconductors, it is proved that for identical bandgaps, carbon based 1D structures have higher tunneling probabilities. The high tunneling current magnitudes for 1D carbon structures suggest the distinct feasibility of high-performance tunneling-based field-effect transistors.

cond-mat.mtrl-sci↗
arXiv2007

Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons

In this work, fundamental results for carrier statistics in graphene 2-dimensional sheets and nanoscale ribbons are derived. Though the behavior of intrinsic carrier densities in 2d graphene sheets is found to differ drastically from traditional semiconductors, very narrow (sub-10 nm) ribbons are found to be similar to traditional narrow-gap semiconductors. The quantum capacitance, an important parameter in the electrostatic design of devices, is derived for both 2d graphene sheets and nanoribbons.

cond-mat.mtrl-sci↗
arXiv2002

Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization doped electron distributions than comparable shallow donor doped structures. The technique is readily employed for creating highly conductive layers in many device structures.

cond-mat↗