arXiv subjects

Huiping Han

Publications and source records attributed to Huiping Han.

5 recordsLinked to original sources

arXiv2026

Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor

The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to limited semiconductors with reliable hole transport and their high activation energies. Here, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultra-wide-bandgap semiconductor and a high-k dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-k (30.5) SrTiO3 perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (~200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm^2/Vs to 572 cm^2/Vs) and high on-off ratio (~10^9). Furthermore, tuning annealing temperature allows operation in either enhancement or depletion mode. The robust p-type transistor with high efficiency holds great potential for future power electronics, UV optoelectronics, and harsh-environment electronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Electrical Modulation and Probing of Antiferromagnetism in Hybrid Multiferroic Heterostructures

The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high integration density. However, these advantages also introduce challenges in probing and controlling AFM order, thereby restricting their practical applications. In this study, we demonstrate an all-electric control and probing of the AFM order in heavy metal (HM)/AFM insulator (AFMI) heterostructures on a ferroelectric substrate at room temperature (RT). The AFM order was detected by the anomalous Hall effect (AHE) and manipulated by the ferroelectric field effect as well as the piezoelectric effect in heterostructures of Pt/NiO/0.7Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$--0.3PbTiO$_{3}$ (PMN--PT). The non-volatile control of AFM order gives rise to a 33\% modulation of AHE, which is further evidenced by synchrotron-based X-ray magnetic linear dichroism (XMLD). Combined with the $in$-$situ$ piezoelectric response of AHE, we demonstrate that ferroelectric polarization contributes mainly to the control of the AFM order. Our results are expected to have broader implications for efficient spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Artificial ferroelectric-like hysteresis in antiferroelectrics with non-uniform disorder

Antiferroelectrics exhibit unique double-hysteresis polarization loops, which have garnered significant attention due to their potential applications such as energy storage, electromechanical transduction, as well as synapse devices. However, numerous antiferroelectric materials have been reported to display signs of hysteresis loops resembling those of ferroelectric materials, and a comprehensive understanding remains elusive. In this work, we provide a phenomenological model that reproduces such widely observed artificial ferroelectric hysteresis with a superposition of numerous disordered antiferroelectric loops that have varying antiferroelectric-to-ferroelectric transition fields, particularly when these field ranges intersect. Experimentally, we realized such artificial ferroelectric-like hysteresis loops in the prototypical antiferroelectric PbZrO$_3$ and PbHfO$_3$ thin films, by introducing non-uniform local disorder (e.g., defects) via fine-tuning of the film growth conditions. These ferroelectric-like states are capable of persisting for several hours prior to transitioning back into the thermodynamically stable antiferroelectric ground state. Those results provide insights into the fundamental impact of disorder on the AFE properties and new possibilities of disorder-tailored functions.

cond-mat.mtrl-sci↗

arXiv2025

Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films

Although monocrystalline oxide films offer broad functional capabilities, their practical use is hampered by challenges in patterning. Traditional patterning relies on etching, which can be costly and prone to issues like film or substrate damage, under-etching, over-etching, and lateral etching. In this study, we introduce a dual-lift-off method for direct patterning of oxide films, circumventing the etching process and associated issues. Our method involves an initial lift-off of amorphous Sr$_3$Al$_2$O$_6$ or Sr$_4$Al$_2$O$_7$ ($a$SAO) through stripping the photoresist, followed by a subsequent lift-off of the functional oxide thin films by dissolving the $a$SAO layer. $a$SAO functions as a ``high-temperature photoresist", making it compatible with the high-temperature growth of monocrystalline oxides. Using this method, patterned ferromagnetic La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and ferroelectric BiFeO$_3$ were fabricated, accurately mirroring the shape of the photoresist. Our study presents a straightforward, flexible, precise, environmentally friendly, and cost-effective method for patterning high-quality oxide thin films.

cond-mat.mtrl-sci↗

arXiv2024

ChatGPT-Assisted Visualization of Atomic Orbitals: Understanding Symmetry, Mixed State, and Superposition

For undergraduate students newly introduced to quantum mechanics, solving simple Schr\"{o}dinger equations is relatively straightforward. However, the more profound challenge lies in comprehending the underlying physical principles embedded in the solutions. During my academic experience, a recurring conceptual difficulty was understanding why only $s$ orbitals, and not others like $p$ orbitals, exhibit spherical symmetry. At first glance, this seems paradoxical, given that the potential energy function itself is spherically symmetric. Specifically, why do $p$ orbitals adopt a dumbbell shape instead of a spherical one? For a hydrogen atom with an electron in the $2p$ state, which specific $2p$ orbital does the electron occupy, and how do the $x$, $y$, and $z$ axes in $2p_x$, $2p_y$, and $2p_z$ connect to the real world? Additionally, is the atom still spherically symmetric in such a state? These questions relate to core concepts of quantum mechanics concerning symmetry, mixed state, and superposition. This paper delves into these questions by investigating this specific case, utilizing the advanced visualization capabilities offered by ChatGPT. This paper underscores the importance of emerging AI tools in enhancing students' understanding of abstract principles.

physics.ed-ph↗