arXiv subjects

Huishan Wang

Publications and source records attributed to Huishan Wang.

4 recordsLinked to original sources

arXiv2025

Pronounced scale-dependent charge carrier density in graphene quantum Hall devices

The miniaturization of quantum Hall resistance standards (QHRS) using epitaxial graphene on silicon carbide necessitates understanding how device dimensions impact performance. This study reveals a pronounced scale-dependent carrier density in graphene Hall devices: under electron doping, carrier density decreases with increasing channel width (Wd), while the opposite occurs under hole doping. This phenomenon, most significant for Wd less than 400 um, directly influences the onset of magnetic field required for quantization. Fermi velocity measurements and angle-resolved photoemission spectroscopy (ARPES) analysis indicate that band structure modifications and electron-electron interactions underlie this size dependence. Utilizing machine learning with limited data, we optimized the device geometry, identifying a channel width of ~360 um as the optimal balance between resistance uncertainty and on-chip integration density. This work provides key insights for designing high-performance, miniaturized graphene-based QHRS arrays.

cond-mat.mes-hall↗

arXiv2021

Moiré Imaging in Twisted Bilayer Graphene Aligned on Hexagonal Boron Nitride

Moiré superlattices (MSL) formed in angle-aligned bilayers of van der Waals materials have become a promising platform to realize novel two-dimensional electronic states. Angle-aligned trilayer structures can form two sets of MSLs which could potentially interfere with each other. In this work, we directly image the moiré patterns in both monolayer graphene aligned on hBN and twisted bilayer graphene aligned on hBN, using combined scanning microwave impedance microscopy and conductive atomic force microscopy. Correlation of the two techniques reveals the contrast mechanism for the achieved ultrahigh spatial resolution (<2 nm). We observe two sets of MSLs with different periodicities in the trilayer stack. The smaller MSL breaks the 6-fold rotational symmetry and exhibits abrupt discontinuities at the boundaries of the larger MSL. Using a rigid atomic-stacking model, we demonstrate that the hBN layer considerably modifies the MSL of twisted bilayer graphene. We further analyze its effect on the reciprocal space spectrum of the dual-moiré system.

cond-mat.mes-hall↗

arXiv2019

Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment

Atomically thin hexagonal boron nitride (h-BN) is often regarded as an elastic film that is impermeable to gases. The high stabilities in thermal and chemical properties allow h-BN to serve as a gas barrier under extreme conditions.In this work, we demonstrate the isolation of hydrogen in bubbles of h-BN via plasma treatment.Detailed characterizations reveal that the substrates do not show chemical change after treatment. The bubbles are found to withstand thermal treatment in air,even at 800 degree celsius. Scanning transmission electron microscopy investigation shows that the h-BN multilayer has a unique aligned porous stacking nature, which is essential for the character of being transparent to atomic hydrogen but impermeable to hydrogen molecules. We successfully demonstrated the extraction of hydrogen gases from gaseous compounds or mixtures containing hydrogen element. The successful production of hydrogen bubbles on h-BN flakes has potential for further application in nano/micro-electromechanical systems and hydrogen storage.

physics.app-ph↗

arXiv2015

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in earlier reports are always polycrystalline with small grains due to high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 um2, about 2 orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nano-electronic applications.

cond-mat.mtrl-sci↗