arXiv subjects

Huiyun Liu

Publications and source records attributed to Huiyun Liu.

At least 19 recordsLinked to original sources

arXiv2026

Structured Single-photon Metasource

Structured quantum light is crucial for high-dimensional quantum information processing, yet its direct generation from quantum emitters remains challenging due to their intrinsic locality and omnidirectional radiation. Metasurfaces have been adopted for quantum-light wavefront shaping, typically in cascaded or stacked configurations that suffer from low efficiency and limited resolution. Here, we demonstrate a semiconductor metasource that directly embodies single quantum dots in a nonlocal GaAs metasurface. Spontaneous emission from quantum dot is efficiently funneled into an extended quasi-bound-state-in-the-continuum mode while sustaining strong mode-emitter overlap. A lateral core-barrier heterostructure tunes mode volume and spatial distribution to balance Purcell enhancement and holographic resolution. Using spatially modulated geometric phase, our compact metasource enables deterministic generation of diverse single-photon radiation patterns, including orbital-angular-momentum beams and holographic images. Our work brings versatile single-photon wavefront control into the nanoscale cavity quantum electrodynamics regime, offering a scalable route toward integrated sources of structured quantum light.

physics.optics↗

arXiv2025

Optical Computation-in-Communication enables low-latency, high-fidelity perception in telesurgery

Artificial intelligence (AI) holds significant promise for enhancing intraoperative perception and decision-making in telesurgery, where physical separation impairs sensory feedback and control. Despite advances in medical AI and surgical robotics, conventional electronic AI architectures remain fundamentally constrained by the compounded latency from serial processing of inference and communication. This limitation is especially critical in latency-sensitive procedures such as endovascular interventions, where delays over 200 ms can compromise real-time AI reliability and patient safety. Here, we introduce an Optical Computation-in-Communication (OCiC) framework that reduces end-to-end latency significantly by performing AI inference concurrently with optical communication. OCiC integrates Optical Remote Computing Units (ORCUs) directly into the optical communication pathway, with each ORCU experimentally achieving up to 69 tera-operations per second per channel through spectrally efficient two-dimensional photonic convolution. The system maintains ultrahigh inference fidelity within 0.1% of CPU/GPU baselines on classification and coronary angiography segmentation, while intrinsically mitigating cumulative error propagation, a longstanding barrier to deep optical network scalability. We validated the robustness of OCiC through outdoor dark fibre deployments, confirming consistent and stable performance across varying environmental conditions. When scaled globally, OCiC transforms long-haul fibre infrastructure into a distributed photonic AI fabric with exascale potential, enabling reliable, low-latency telesurgery across distances up to 10,000 km and opening a new optical frontier for distributed medical intelligence.

physics.optics↗

arXiv2025

Advancing the Foundation Model for Music Understanding

The field of Music Information Retrieval (MIR) is fragmented, with specialized models excelling at isolated tasks. In this work, we challenge this paradigm by introducing a unified foundation model named MuFun for holistic music understanding. Our model features a novel architecture that jointly processes instrumental and lyrical content, and is trained on a large-scale dataset covering diverse tasks such as genre classification, music tagging, and question answering. To facilitate robust evaluation, we also propose a new benchmark for multi-faceted music understanding called MuCUE (Music Comprehensive Understanding Evaluation). Experiments show our model significantly outperforms existing audio large language models across the MuCUE tasks, demonstrating its state-of-the-art effectiveness and generalization ability.

cs.SD↗

arXiv2025

Cavity-Quantum Electrodynamics with Moiré Flatband Photonic Crystals

Quantum emitters are a key component in photonic quantum technologies. Enhancing their single-photon emission by engineering the photonic environment using cavities can significantly improve the overall efficiency in quantum information processing. However, this enhancement is often constrained by the need for precise nanoscale control over the emitter's position within micro- or nano-cavities. Inspired by the fascinating physics of moiré patterns, we present an approach to strongly modify the spontaneous emission rate of a quantum emitter using a finely designed multilayer moiré photonic crystal with a robust isolated-flatband dispersion. Theoretical analysis reveals that, due to its nearly infinite photonic density of states, the moiré cavity can simultaneously achieve a high Purcell factor and exhibit large tolerance over the emitter's position. We experimentally demonstrate the coupling between this moiré cavity and a quantum dot through the cavity-determined polarization of the dot's emission. The radiative lifetime of the quantum dot can be tuned by a factor of 40, ranging from 42 ps to 1692 ps, which is attributed to strong Purcell enhancement and Purcell inhibition effects. Our findings pave the way for moiré flatband cavity-enhanced quantum light sources, quantum optical switches, and quantum nodes for quantum internet applications.

physics.optics↗

arXiv2025

Low-Defect Quantum Dot Lasers Directly Grown on Silicon Exhibiting Low Threshold Current and High Output Power at Elevated Temperatures

The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies. However, the III-V/Si lattice and thermal expansion mismatch pose significant hurdles, leading to defects that degrade lasing performance. This study overcomes this challenge, demonstrating InAs/GaAs-on-Si lasers that perform on par with top-tier lasers on native GaAs substrates. This is achieved through a newly developed epitaxial approach comprising a series of rigorously optimised growth strategies. Atomic-resolution scanning tunnelling microscopy and spectroscopy experiments reveal exceptional material quality in the active region, and elucidate the impact of each growth strategy on defect dynamics. The optimised III-V-on-silicon ridge-waveguide lasers demonstrate a continuous-wave threshold current as low as 6 mA and high-temperature operation reaching 165 °C. At 80 °C, critical for data centre applications, they maintain a 12-mA threshold and 35 mW output power. Furthermore, lasers fabricated on both Si and GaAs substrates using identical processes exhibit virtually identical average threshold current. By eliminating the performance limitations associated with the GaAs/Si mismatch, this study paves the way for robust and high-density integration of a broad spectrum of critical III-V photonic technologies into the silicon ecosystem.

cond-mat.mtrl-sci↗

arXiv2024

Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers

Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire lasers represent a flexible class of light source where each nanowire is both gain material and cavity; however, strong coupling between these properties and the performance leads to inhomogeneity across the population. While this has been studied and optimized for individual material systems, no architecture-wide insight is available. Here, nine nanowire laser material systems are studied and compared using 55,516 nanowire lasers to provide statistically robust insight into performance. These results demonstrate that, while it may be important to optimise internal quantum efficiency for certain materials, cavity effects are always critical. Our study provides a roadmap to optimize the performance of nanowire lasers made from any material: this can be achieved by ensuring a narrow spread of lengths and end-facet reflectivities.

physics.optics↗

arXiv2023

Improving Emotional Expression and Cohesion in Image-Based Playlist Description and Music Topics: A Continuous Parameterization Approach

Text generation in image-based platforms, particularly for music-related content, requires precise control over text styles and the incorporation of emotional expression. However, existing approaches often need help to control the proportion of external factors in generated text and rely on discrete inputs, lacking continuous control conditions for desired text generation. This study proposes Continuous Parameterization for Controlled Text Generation (CPCTG) to overcome these limitations. Our approach leverages a Language Model (LM) as a style learner, integrating Semantic Cohesion (SC) and Emotional Expression Proportion (EEP) considerations. By enhancing the reward method and manipulating the CPCTG level, our experiments on playlist description and music topic generation tasks demonstrate significant improvements in ROUGE scores, indicating enhanced relevance and coherence in the generated text.

cs.CL↗

arXiv2023

Holistic nanowire laser characterization as a route to optimal design

Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as both the gain medium and the cavity for the lasing action: the functional performance (threshold and wavelength) is therefore dependent on both the opto-electronic and crystallographic properties of each nanowire. However, scalable bottom-up manufacturing techniques often suffer from inter-nanowire variation, leading to, often dramatic, differences in yield and performance between individual nanowires. Establishing the relationship between manufacturing controls, geometric and material properties and the lasing performance is a crucial step towards optimisation, however, this is challenging to achieve experimentally due to the complex interdependance of such properties. Here, we present a high-throughput correlative approach to characterise over 5000 individual GaAsP/GaAs multiple quantum well nanowire lasers. Fitting the spontaneous emission provides the threshold carrier density, while coherence length measurements measures end-facet reflectivity. We show that the lasing wavelength and threshold are intrinsically related to the width of a single quantum well due to quantum confinement and bandfilling effects. Unexpectedly, there is no strong relationship between the properties of the lasing cavity (facet reflectivity and distributed losses) and the threshold: instead the threshold is negatively correlated with the non-radiative recombination lifetime of the carriers. This approach therefore provides an optimisation strategy that is not accessible through small-scale studies. The quality and width of the quantum wells limit the threshold of these nanowire lasers, rather than the cavity quality.

physics.optics↗

arXiv2022

Reciprocal phase transition-enabled electro-optic modulation

Electro-optic (EO) modulation is a well-known and essential topic in the field of communications and sensing. Its ultrahigh efficiency is unprecedentedly desired in the current green and data era. However, dramatically increasing the modulation efficiency is difficult due to the monotonic mapping relationship between the electrical signal and modulated optical signal. Here, a new mechanism termed phase-transition EO modulation is revealed from the reciprocal transition between two distinct phase planes arising from the bifurcation. Remarkably, a monolithically integrated mode-locked laser (MLL) is implemented as a prototype. A 24.8-GHz radio-frequency signal is generated and modulated, achieving a modulation energy efficiency of 3.06 fJ/bit improved by about four orders of magnitude and a contrast ratio exceeding 50 dB. Thus, MLL-based phase-transition EO modulation is characterised by ultrahigh modulation efficiency and ultrahigh contrast ratio, as experimentally proved in radio-over-fibre and underwater acoustic-sensing systems. This phase-transition EO modulation opens a new avenue for green communication and ubiquitous connections.

physics.optics↗

arXiv2022

Measurement of the quantum-confined Stark effect in $InAs/In(Ga)As$ quantum dots with p-doped quantum dot barriers

The quantum-confined Stark effect in InAs/In(Ga)As quantum dots (QDs) using non-intentionally doped and p-doped QD barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped QD barriers lead to a better figure of merit $(FoM)$, defined as the ratio of the change in absorption $Δα$ for a reverse bias voltage swing to the loss at $1 V$ $α(1 V)$, $FoM=Δα/α(1 V)$. The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the QD barriers can lead to more than a 3$\times$ increase in FoM modulator performance between temperatures of -73 $°$C to 100 $°$C when compared with the stack with NID QD barriers.

cond-mat.mes-hall↗

arXiv2021

Room-temperature continuous-wave Dirac-vortex topological lasers on silicon

Robust laser sources are a fundamental building block for contemporary information technologies. Originating from condensed-matter physics, the concept of topology has recently entered the realm of optics, offering fundamentally new design principles for lasers with enhanced robustness. In analogy to the well-known Majorana fermions in topological superconductors, Dirac-vortex states have recently been investigated in passive photonic systems and are now considered as a promising candidate for single-mode large-area lasers. Here, we experimentally realize the first Dirac-vortex topological lasers in InAs/InGaAs quantum-dot materials monolithically grown on a silicon substrate. We observe room-temperature continuous-wave single-mode linearly polarized vertical laser emission at a telecom wavelength. Most importantly, we confirm that the wavelength of the Dirac-vortex laser is topologically robust against variations in the cavity size, and its free spectral range defies the universal inverse scaling law with the cavity size. These lasers will play an important role in CMOS-compatible photonic and optoelectronic systems on a chip.

physics.optics↗

arXiv2021

Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires

Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the growth much more challenging compared with growths on thin-films, particularly on NWs with small diameters (Ø <100 nm). Moreover, the {110} sidewall facets of self-catalyzed NWs favor two-dimensional growth (2D), with the realization of three-dimensional (3D) Stranski-Krastanow growth becoming extremely challenging. Here, we demonstrate thermally-driven formation of Ge dots on the {110} sidewalls facets of thin self-catalyzed NWs without using any surfactant or surface treatment. The 2D-3D transition of the pseudomorphic Ge layer grown on GaAs NWs is driven by energy minimization under high-temperature annealing. This method opens a new avenue to integrate QDs on NWs without any restriction on NW diameter or elastic strain, which can allow the formation of QDs in a wider range of materials systems where the growth of islands by traditional mechanisms is not possible, with benefits for novel NWQD-based optoelectronic devices.

cond-mat.mes-hall↗

arXiv2021

Design of High-Quality Reflectors for Vertical Nanowire Lasers on Si

Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from vertically-standing NWs on silicon is much more difficult to achieve compared with NWs broken off from substrates, causing significant challenges in the integration. Here, the challenge of achieving vertically-standing NW lasers is systematically analyzed. The poor optical reflectivity at the NW/Si interface results severe optical field leakage to the substrate, and the commonly used SiO2 or Si2N3 dielectric mask at the interface can only improve it to ~10%, which is the major obstacle for achieving low-threshold lasing. A NW super lattice distributed Bragg reflector is therefore proposed, which is able to greatly improve the reflectivity to >97%. This study provides a highly-feasible method to greatly improve the performance of vertically-standing NW lasers, which can boost the rapid development of Si photonics.

physics.optics↗

arXiv2021

Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitive to crystal quality and structures, there is relatively little study on defect-free growth with Au-free mode and structure optimisation for achiving high performances. Here, we report a detailed study of the first self-catalyzed defect-free axially-stacked deep NWQDs. High structural quality is maintained when 50 GaAs QDs are placed in a single GaAsP NW. The QDs have very sharp interfaces (1.8~3.6 nm) and can be closely stacked with very similar structural properties. They exhibit the deepest carrier confinement (~90 meV) and largest exciton-biexciton splitting (~11 meV) among non-nitride III-V NWQDs, and can maintain good optical properties after being stored in ambient atmosphere for over 6 months due to excellent stability. Our study sets a solid foundation to build high-performance axially-stacked NWQD devices that are compatible with CMOS technologies.

physics.app-ph↗

arXiv2021

Diameter dependence of the temperature dynamics of hot carriers in photoexcited GaAsP nanowires

Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the larger these differences are, in particular in the carrier-phonon scattering and thermal conductivity. In this work, we present femtosecond transient absorbance measurements on GaAs0.8P0.2 NWs of two different diameters, 36 and 51 nm. The results show that thinner NWs sustain the hot-carriers at a higher temperature for longer times than thicker NWs. We explain the observation suggesting that in thinner NWs, the build-up of a hot-phonon bottleneck is easier than in thicker NWs because of the increased phonon scattering at the NW sidewalls which facilitates the build-up of a large phonon density. The large number of optical phonons emitted during the carrier relaxation processes generate a non-equilibrium population of acoustic phonons that propagates less efficiently in thin NWs. This makes the possible acoustic-to-optical phonon up-conversion process easier, which prolongs the LO phonon lifetime resulting in the slowdown of the carrier cooling. The important observation that the carrier temperature in thin NWs is higher than in thick NWs already at the beginning of the hot carrier regime suggests that the phonon-mediated scattering processes in the non-thermal regime play a major role at least for the carrier densities investigated here (8x1018-4x1019 cm-3). Our results also suggest that the boundary scattering of phonons at crystal defects is negligible compared to the surface scattering at the NW sidewalls.

cond-mat.mes-hall↗

arXiv2020

Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO$_2$ Layer

Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting systems. However, due to their nanoscale dimension, they suffer more severe corrosion by the electrolyte solution than the thin-film counterparts. Thus, short-term durability is the major obstacle for using these NWs for practical water splitting applications. Here, we demonstrated for the first time that a thin layer (~7 nm thick) of compact TiO$_2$ deposited by atomic layer deposition can provide robust protection to III-V NWs. The protected GaAs NWs maintain 91.4% of its photoluminescence intensity after 14 months of storage in ambient atmosphere, which suggests the TiO$_2$ layer is pinhole-free. Working as a photocathode for water splitting, they exhibited a 45% larger photocurrent density compared with un-protected counterparts and a high Faraday efficiency of 91%, and can also maintain a record-long highly-stable performance among narrow-bandgap III-V NW photoelectrodes; after 67 hours photoelectrochemical stability test reaction in strong acid electrolyte solution (pH = 1), they show no apparent indication of corrosion, which is in stark contrast to the un-protected NWs that are fully failed after 35-hours. These findings provide an effective way to enhance both stability and performance of III-V NW based photoelectrodes, which are highly important for practical applications in solar-energy-based water splitting systems.

cond-mat.mes-hall↗

arXiv2019

High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy

The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of GSMBE. The UTC epitaxial structure contains a 300 nm n-InP collection layer and a 300 nm n++-InGaAsP waveguide layer. UTC-PDs integrated with Coplanar Waveguides (CPW) exhibit 3 dB bandwidth greater than 65 GHz and output RF power of 1.1 dBm at 100 GHz. We also demonstrate accurate prediction of the absolute level of power radiated by our antenna integrated UTCs, between 200 GHz and 260 GHz, using 3d full-wave modelling and taking the UTC-to-antenna impedance match into account. Further, we present the first optical 3d full-wave modelling of waveguide UTCs, which provides a detailed insight into the coupling between a lensed optical fibre and the UTC chip.

physics.app-ph↗

arXiv2019

Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector

In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P~I0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photogenerated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm2 under -0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-assisted tunneling, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at ~5.5 um at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3*10e9 cm*Hz1/2/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface, and suppression of surface leakage channels are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.

physics.app-ph↗