arXiv subjects

Hung-Tzu Chang

Publications and source records attributed to Hung-Tzu Chang.

15 recordsLinked to original sources

arXiv2025

Revealing domain wall stability during ultrafast demagnetization

The ultrafast control of nanoscale spin textures such as magnetic domain walls or skyrmions is essential for advancing high-speed, high-density spintronics. However, imaging their dynamics will require a technique that combines nanometer spatial and femtosecond temporal resolution. Introducing ultrafast sub-wavelength imaging in the extreme ultraviolet, we track domain wall properties during ultrafast demagnetization in ferro- and ferrimagnetic thin films. We reveal that domain walls remain invariant in position, shape, and width, down to a demonstrated sub-nanometer precision, for up to 50% demagnetization. Stronger excitation causes stochastic nanoscale domain switching. This previously unobservable robustness of laser-excited domain walls highlights the localized nature of photoinduced demagnetization and presents both challenges and opportunities for all-optical magnetic control. The presented technique can be generalized to directly probe nanoscale dynamics in spintronic materials and devices.

cond-mat.mtrl-sci↗

arXiv2023

High-sensitivity extreme-ultraviolet transient absorption spectroscopy enabled by machine learning

We introduce a machine-learning-based approach to enhance the sensitivity of optical-extreme ultraviolet (XUV) transient absorption spectroscopy. A reference spectrum is used as input to a three-layer feed-forward neural network, allowing for an efficient elimination of source noise from measurement data. In pump-probe experiments using high-harmonic radiation, we show a more than tenfold improvement in noise suppression in XUV transient absorption spectra compared to conventional referencing. Utilizing strong spectral correlations in the source fluctuations, the network facilitates a pixel-wise noise reduction without the need for wavelength calibration of the reference spectrum. The presented method can be adapted to a wide range of beam lines and enables the investigation of subtle electron and lattice dynamics in the weak excitation regime, relevant for the study of photovoltaics and photoinduced phase transitions of strongly correlated materials.

physics.optics↗

arXiv2023

Carrier and Phonon Dynamics in Multilayer WSe2 captured by Extreme Ultraviolet Transient Absorption Spectroscopy

Carrier and phonon dynamics in a multilayer WSe2 film are captured by extreme ultraviolet (XUV) transient absorption (TA) spectroscopy at the W N6,7, W O2,3, and Se M4,5 edges (30-60 eV). After the broadband optical pump pulse, the XUV probe directly reports on occupations of optically excited holes and phonon-induced band renormalizations. By comparing with density functional theory calculations, XUV transient absorption due to holes are identified below the W O3 edge whereas signals at the Se M4,5 edges are dominated by phonon dynamics. Therein, 0.4 ps hole relaxation time, 1.5 ps carrier recombination time, and 1.7 ps phonon heating time are extracted. The acquisition of hole and phonon-induced signals in a single experiment can facilitate the investigation of the correlations between electron and phonon dynamics. Furthermore, the simultaneous observation of signals from different elements can be further extended to explore photochemical processes in multilayers and alloys, thereby providing key information for their applications in electronics, photocatalysts, and spintronics.

cond-mat.mtrl-sci↗

arXiv2022

Electronic and structural fingerprints of charge density wave excitations in extreme ultraviolet transient absorption spectroscopy

Femtosecond core-level transient absorption spectroscopy is utilized to investigate photoinduced dynamics of the charge density wave in 1T-TiSe2 at the Ti M2,3 edge (30-50 eV). Photoexcited carriers and phonons are found to primarily induce spectral red-shifts of core-level excitations, and a carrier relaxation time and phonon heating time of approximately 360 fs and 1.0 ps are extracted, respectively. Pronounced oscillations in delay-dependent absorption spectra are assigned to coherent excitations of the optical $A_{1g}$ phonon (6.0 THz) and the $A_{1g}^*$ charge density wave amplitude mode (3.3 THz). By comparing the measured spectra with time-dependent density functional theory simulations, we determine the directions of the momentary atomic displacements of both coherent modes and estimate their amplitudes. This work presents a first look on charge density wave excitations with table-top core-level transient absorption spectroscopy, enabling simultaneous access to electronic and lattice excitation and relaxation.

cond-mat.mtrl-sci↗

arXiv2021

Coupled Valence Carrier and Core-Exciton Dynamics in WS$_{2}$ Probed by Few-Femtosecond Extreme Ultraviolet Transient Absorption Spectroscopy

Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy, performed with optical 500-1000 nm supercontinuum and broadband XUV pulses (30-50 eV), simultaneously probes dynamics of photoexcited carriers in WS$_{2}$ at the W O$_3$ edge (37-45 eV) and carrier-induced modifications of core-exciton absorption at the W N$_{6,7}$ edge (32-37 eV). Access to continuous core-to-conduction band absorption features and discrete core-exciton transitions in the same XUV spectral region in a semiconductor provides a novel means to investigate the effect of carrier excitation on core-exciton dynamics. The core-level transient absorption spectra, measured with either pulse arriving first to explore both core-level and valence carrier dynamics, reveal that core-exciton transitions are strongly influenced by the photoexcited carriers. A $1.2\pm0.3$ ps hole-phonon relaxation time and a $3.1\pm0.4$ ps carrier recombination time are extracted from the XUV transient absorption spectra from the core-to-conduction band transitions at the W O$_{3}$ edge. Global fitting of the transient absorption signal at the W N$_{6,7}$ edge yields $\sim 10$ fs coherence lifetimes of core-exciton states and reveals that the photoexcited carriers, which alter the electronic screening and band filling, are the dominant contributor to the spectral modifications of core-excitons and direct field-induced changes play a minor role. This work provides a first look at the modulations of core-exciton states by photoexcited carriers and advances our understanding of carrier dynamics in metal dichalcogenides.

cond-mat.mtrl-sci↗

arXiv2021

Characterization of Carrier Cooling Bottleneck in Silicon Nanoparticles by Extreme Ultraviolet (XUV) Transient Absorption Spectroscopy

Silicon nanoparticles have the promise to surpass the theoretical efficiency limit of single-junction silicon photovoltaics by the creation of a "phonon bottleneck", a theorized slowing of the cooling rate of hot optical phonons that in turn reduces the cooling rate of hot carriers in the material. To verify the presence of a phonon bottleneck in silicon nanoparticles requires simultaneous resolution of electronic and structural changes at short timescales. Here, extreme ultraviolet transient absorption spectroscopy is used to observe the excited state electronic and lattice dynamics in polycrystalline silicon nanoparticles following 800 nm photoexcitation, which excites carriers with $0.35 \pm 0.03$ eV excess energy above the $Δ_1$ conduction band minimum. The nanoparticles have nominal 100 nm diameters with crystalline grain sized of about ~16 nm. The extracted carrier-phonon and phonon-phonon relaxation times of the nanoparticles are compared to those for a silicon (100) single crystal thin film at similar carrier densities ($2$ x $10^{19} cm^{-3}$ for the nanoparticles and $6$ x $10^{19} cm^{-3}$ for the thin film). The measured carrier-phonon and phonon-phonon scattering lifetimes for the polycrystalline nanoparticles are $870 \pm 40$ fs and $17.5 \pm 0.3$ ps, respectively, versus $195 \pm 20$ fs and $8.1 \pm 0.2$ ps, respectively, for the silicon thin film. The reduced scattering rates observed in the nanoparticles are consistent with the phonon bottleneck hypothesis.

cond-mat.mes-hall↗

arXiv2021

Solid-state core-exciton dynamics in NaCl observed by tabletop attosecond four-wave mixing spectroscopy

Nonlinear wave-mixing in solids with ultrafast x-rays can provide new insight into complex electronic dynamics of materials. Here, tabletop-based attosecond noncollinear four-wave mixing (FWM) spectroscopy using one extreme ultraviolet (XUV) pulse from high harmonic generation and two separately timed few-cycle near-infrared (NIR) pulses characterizes the dynamics of the Na+ L2,3 edge core-excitons in NaCl around 33.5 eV. An inhomogeneous distribution of core-excitons underlying the well-known doublet absorption of the Na+ Γ-point core-exciton spectrum is deconvoluted by the resonance-enhanced nonlinear wave-mixing spectroscopy. In addition, other dark excitonic states that are coupled to the XUV-allowed levels by the NIR pulses are characterized spectrally and temporally. Approximate sub-10 femtosecond coherence lifetimes of the core-exciton states are observed. The core-excitonic properties are discussed in the context of strong electron-hole exchange interactions, electron-electron correlation, and electron-phonon broadening. This investigation successfully indicates that tabletop attosecond FWM spectroscopies represent a viable technique for time-resolved solid-state measurements.

cond-mat.mtrl-sci↗

arXiv2021

Electron Thermalization and Relaxation in Laser-Heated Nickel by Few-Femtosecond Core-Level Transient Absorption Spectroscopy

Direct measurements of photoexcited carrier dynamics in nickel are made using few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy at the nickel M$_{2,3}$ edge. It is observed that the core-level absorption lineshape of photoexcited nickel can be described by a Gaussian broadening ($σ$) and a red shift ($ω_{s}$) of the ground state absorption spectrum. Theory predicts, and the experimental results verify that after initial rapid carrier thermalization, the electron temperature increase ($ΔT$) is linearly proportional to the Gaussian broadening factor $σ$, providing quantitative real-time tracking of the relaxation of the electron temperature. Measurements reveal an electron cooling time for 50 nm thick polycrystalline nickel films of 640$\pm$80 fs. With hot thermalized carriers, the spectral red shift exhibits a power-law relationship with the change in electron temperature of $ω_{s}\proptoΔT^{1.5}$. Rapid electron thermalization via carrier-carrier scattering accompanies and follows the nominal 4 fs photoexcitation pulse until the carriers reach a quasi-thermal equilibrium. Entwined with a <6 fs instrument response function, carrier thermalization times ranging from 34 fs to 13 fs are estimated from experimental data acquired at different pump fluences and it is observed that the electron thermalization time decreases with increasing pump fluence. The study provides an initial example of measuring electron temperature and thermalization in metals in real time with XUV light, and it lays a foundation for further investigation of photoinduced phase transitions and carrier transport in metals with core-level absorption spectroscopy.

cond-mat.mtrl-sci↗

arXiv2020

Source noise suppression in attosecond transient absorption spectroscopy by edge-pixel referencing

Attosecond transient absorption spectroscopy (ATAS) is used to observe photoexcited dynamics with outstanding time resolution. The main experimental challenge of this technique is that high-harmonic generation sources show significant instabilities, resulting in sub-par sensitivity when compared to other techniques. This paper proposes edge-pixel referencing as a means to suppress this noise. Two approaches are introduced: the first is deterministic and uses a correlation analysis, while the second relies on singular value decomposition. Each methods is demonstrated and quantified on a noisy measurement taken on $\text{WS}_2$ and results in a fivefold increase in sensitivity. The combination of the two methods ensures the fidelity of the procedure and can be implemented on live data collection but also on existing datasets. The results show that edge-referencing methods bring the sensitivity of ATAS near the detector noise floor. An implementation of the post-processing code is provided to the reader.

physics.optics↗

arXiv2020

Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe$_{2}$ with Femtosecond Core-Level Spectroscopy

We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe$_{2}$ semiconductor. By interrogating the valence electronic structure via localized Te 4$\textit{d}$ (39-46 eV) and Mo 4$\textit{p}$ (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15$\pm$5 fs and 380$\pm$90 fs, respectively, and an electron-hole recombination time of 1.5$\pm$0.1 ps. Furthermore, excitations of coherent out-of-plane A$_{1g}$ (5.1 THz) and in-plane E$_{1g}$ (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A$_{1g}$ coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe$_{2}$ within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.

cond-mat.mtrl-sci↗

arXiv2019

Attosecond time-domain measurement of core-excitonic decay in magnesium oxide

Excitation of ionic solids with extreme ultraviolet pulses creates localized core-excitons, which in some cases couple strongly to the lattice. Here, core-excitonic states of magnesium oxide are studied in the time domain at the Mg $\text{L}_{2,3}$ edge with attosecond transient reflectivity spectroscopy. Attosecond pulses trigger the excitation of these short-lived quasiparticles, whose decay is perturbed by time-delayed near infrared optical pulses. Combined with a few-state theoretical model, this reveals that the optical pulse shifts the energy of bright core-exciton states as well as induces features arising from dark core-excitons. We report coherence lifetimes for the first two core-excitons of $2.3 \pm 0.2$ and $1.6 \pm 0.5$ femtoseconds and show that these short lifetimes are primarily a consequence of strong exciton-phonon coupling, disclosing the drastic influence of structural effects in this ultrafast relaxation process.

cond-mat.mtrl-sci↗

arXiv2019

Differentiating Photoexcited Carrier and Phonon Dynamics in the Δ, L, and Γ Valleys of Si(100) with Transient Extreme Ultraviolet Spectroscopy

Transient extreme ultraviolet (XUV) spectroscopy probes core level transitions to unoccupied valence and conduction band states. Uncertainty remains to what degree the core-hole created by the XUV transition modifies the measurement of photoexcited electron and hole energies. Here, the Si {Ł_{2,3}} edge is measured after photoexcitation of electrons to the Δ, L, and Γ valleys of Si(100). The measured changes in the XUV transition probability do not energetically agree with the increasing electron photoexcitation energy. The data therefore experimentally confirm that, for the Si {Ł_{2,3}} edge, the time-dependent electron and hole energies are partially obscured by the core-hole perturbation. A model based on many-body approximations and the Bethe-Salpeter equation is successfully used to predict the core-hole{\apos}s modification of the final transition density of states in terms of both electronic and structural dynamics. The resulting fit time constants match the excited state electron thermalization time and the inter-valley electron-phonon, intra-valley electron-phonon, and phonon-phonon scattering times previously measured in silicon. The outlined approach is a more comprehensive framework for interpreting transient XUV absorption spectra in photoexcited semiconductors.

cond-mat.mtrl-sci↗

arXiv2019

Photoexcited Small Polaron Formation in Goethite (α-FeOOH) Nanorods Probed by Transient Extreme Ultraviolet Spectroscopy

Small polaron formation limits the mobility and lifetimes of photoexcited carriers in metal oxides. As the ligand field strength increases, the carrier mobility decreases, but the effect on the photoexcited small polaron formation is still unknown. Extreme ultraviolet transient absorption spectroscopy is employed to measure small polaron formation rates and probabilities in goethite (α-FeOOH) crystalline nanorods at pump photon energies from 2.2 to 3.1 eV. The measured polaron formation time increases with excitation photon energy from 70 {\pm} 10 fs at 2.2 eV to 350 {\pm} 30 fs at 2.6 eV, whereas the polaron formation probability (85 {\pm} 10%) remains constant. By comparison to hematite (α-Fe2O3), an oxide analog, the role of ligand composition and metal center density in small polaron formation time is discussed. This work suggests that incorporating small changes in ligands and crystal structure could enable the control of photoexcited small polaron formation in metal oxides.

cond-mat.mtrl-sci↗

arXiv2018

Hot Phonon and Carrier Relaxation in Si(100) Determined by Transient Extreme Ultraviolet Spectroscopy

The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple measurements with incommensurate timescales. Here, transient extreme-ultraviolet (XUV) spectroscopy on the silicon 2p core level at 100 eV is used to measure hot carrier and phonon thermalization in Si(100) from tens of femtoseconds to 200 ps following photoexcitation of the indirect transition to the Δ valley at 800 nm. The ground state XUV spectrum is first theoretically predicted using a combination of a single plasmon pole model and the Bethe-Salpeter equation (BSE) with density functional theory (DFT). The excited state spectrum is predicted by incorporating the electronic effects of photo-induced state-filling, broadening, and band-gap renormalization into the ground state XUV spectrum. A time-dependent lattice deformation and expansion is also required to describe the excited state spectrum. The kinetics of these structural components match the kinetics of phonons excited from the electron-phonon and phonon-phonon scattering processes following photoexcitation. Separating the contributions of electronic and structural effects on the transient XUV spectra allows the carrier population, the population of phonons involved in inter- and intra-valley electron-phonon scattering, and the population of phonons involved in phonon-phonon scattering to be quantified as a function of delay time.

cond-mat.mtrl-sci↗

arXiv2017

Direct and Simultaneous Observation of Ultrafast Electron and Hole Dynamics in Germanium

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical/NIR pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by attosecond transient absorption spectroscopy (ATAS) in the extreme ultraviolet at the germanium M_{4,5}-edge (~30 eV). We decompose the ATAS spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8*10^{20}cm^{-3}. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first order electron and hole decay of ~1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with ATAS paves the way for investigating few to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

cond-mat.mtrl-sci↗