arXiv subjects

Hung-Wei Yen

Publications and source records attributed to Hung-Wei Yen.

6 recordsLinked to original sources

arXiv2020

Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures

The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial Bi$_{x}$Te$_{1-x}$/ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the damping-like SOT efficiencies originated from the bulk spin-orbit interactions of such non-epitaxial heterostructures can reach values greater than 100% at room temperature. We further demonstrate current-induced SOT switching in these Bi$_{x}$Te$_{1-x}$-based heterostructures with thermally stable ferromagnetic layers, which indicates that such non-epitaxial chalcogenide materials can be potential efficient SOT sources in future SOT magnetic memory devices.

cond-mat.mtrl-sci↗

arXiv2017

A Comparative Study on Spin-Orbit Torque Efficiencies from W/ferromagnetic and W/ferrimagnetic Heterostructures

It has been shown that W in its resistive form possesses the largest spin-Hall ratio among all heavy transition metals, which makes it a good candidate for generating efficient dampinglike spin-orbit torque (DL-SOT) acting upon adjacent ferromagnetic or ferrimagnetic (FM) layer. Here we provide a systematic study on the spin transport properties of W/FM magnetic heterostructures with the FM layer being ferromagnetic Co$_{20}$Fe$_{60}$B$_{20}$ or ferrimagnetic Co$_{63}$Tb$_{37}$ with perpendicular magnetic anisotropy. The DL-SOT efficiency $|ξ_{DL}|$, which is characterized by a current-induced hysteresis loop shift method, is found to be correlated to the microstructure of W buffer layer in both W/Co$_{20}$Fe$_{60}$B$_{20}$ and W/Co$_{63}$Tb$_{37}$ systems. Maximum values of $|ξ_{DL}|\approx 0.144$ and $|ξ_{DL}|\approx 0.116$ are achieved when the W layer is partially amorphous in the W/Co$_{20}$Fe$_{60}$B$_{20}$ and W/Co$_{63}$Tb$_{37}$ heterostructures, respectively. Our results suggest that the spin Hall effect from resistive phase of W can be utilized to effectively control both ferromagnetic and ferrimagnetic layers through a DL-SOT mechanism.

cond-mat.mtrl-sci↗

arXiv2017

Tunable Spin-Orbit Torques in Cu-Ta Binary Alloy Heterostructures

The spin Hall effect (SHE) is found to be strong in heavy transition metals (HM), such as Ta and W, in their amorphous and/or high resistivity form. In this work, we show that by employing a Cu-Ta binary alloy as buffer layer in an amorphous Cu$_{100-x}$Ta$_{x}$-based magnetic heterostructure with perpendicular magnetic anisotropy (PMA), the SHE-induced damping-like spin-orbit torque (DL-SOT) efficiency $|ξ_{DL}|$ can be linearly tuned by adjusting the buffer layer resistivity. Current-induced SOT switching can also be achieved in these Cu$_{100-x}$Ta$_{x}$-based magnetic heterostructures, and we find the switching behavior better explained by a SOT-assisted domain wall propagation picture. Through systematic studies on Cu$_{100-x}$Ta$_{x}$-based samples with various compositions, we determine the lower bound of spin Hall conductivity $|σ_{SH}|\approx2.02\times10^{4}[\hbar/2e]Ω^{-1}\cdot\operatorname{m}^{-1}$ in the Ta-rich regime. Based on the idea of resistivity tuning, we further demonstrate that $|ξ_{DL}|$ can be enhanced from 0.087 for pure Ta to 0.152 by employing a resistive TaN buffer layer.

cond-mat.mtrl-sci↗

arXiv2017

The Spin-Orbit Torque from a Magnetic Heterostructure with High-Entropy Alloy

High-entropy alloy (HEA) is a family of metallic materials with nearly equal partitions of five or more metals, which might possess mechanical and transport properties that are different from conventional binary or tertiary alloys. In this work, we demonstrate current-induced spin-orbit torque (SOT) magnetization switching in a Ta-Nb-Hf-Zr-Ti HEA-based magnetic heterostructure with perpendicular magnetic anisotropy (PMA). The maximum damping-like SOT efficiency from this particular HEA-based magnetic heterostructure is further determined to be $|ζ^{\operatorname{HEA}}_{DL}|\approx0.033$ by hysteresis loop shift measurements, while that for the Ta control sample is $|ζ^{\operatorname{Ta}}_{DL}|\approx0.04$. Our results indicate that HEA-based magnetic heterostructures can serve as a new group of potential candidates for SOT device applications.

cond-mat.mtrl-sci↗

arXiv2014

Role of stress-assisted martensite in the design of strong ultrafine-grained duplex steels

This work explains the occurrence of transformation-induced plasticity via stress-assisted martensite, when designing ultrafine-grained duplex steels. It is found that, when the austenite is reduced to a fine scale of about 300 nm, the initial deformation-induced microstructure can be dominated by parallel lamellae of epsilon martensite or mechanical twinning, which cannot efficiently provide nucleation sites for strain-induced martensite. Hence, alpha martensite nucleation occurs independently by a stress-assisted process that enhances transformation-induced plasticity in ultrafine-grained austenite. This metallurgical principle was validated experimentally by using a combination of transmission Kikuchi diffraction mapping, transmission electron microscopy, and atom probe microscopy, and demonstrated theoretically by the thermodynamics model of stress-assisted martensite.

cond-mat.mtrl-sci↗

arXiv2013

Co-development of significant elastic and reversible plastic deformation in nanowires

When a material is subjected to an applied stress, the material will experience recoverable elastic deformation followed by permanent plastic deformation at the point when the applied stress exceeds the yield stress of the material. Microscopically, the onset of the plasticity usually indicates the activation of dislocation motion, which is considered to be the primary mechanism of plastic deformation. Once plastic deformation is initiated, further elastic deformation is negligible owing to the limited increase in the flow stress caused by work hardening. Here we present experimental evidence and quantitative analysis of simultaneous development of significant elastic deformation and dislocation-based plastic deformation in single crystal GaAs nanowires (NWs) under bending deformation up to a total strain of ~ 6%. The observation is in sharp contrast to the previous notions regarding the deformation modes. Most of the plastic deformation recovers spontaneously when the external stress is released, and therefore resembles an elastic deformation process.

cond-mat.mtrl-sci↗