arXiv subjects

Husain Manasawala

Publications and source records attributed to Husain Manasawala.

4 recordsLinked to original sources

arXiv2026

High-Density Ultracold Neutron Source for Low-Energy Particle Physics Experiments

SuperSUN, a new superthermal source of ultracold neutrons (UCN) at the Institut Laue-Langevin, exploits inelastic scattering of neutrons in isotopically pure superfluid $^4$He at temperatures below $0.6\,$K. For the first time, continuous operation with an intense broad-spectrum cold neutron beam is demonstrated over 60 days. We observe continuous UCN extraction rates of $21000\,$s$^{-1}$, and storage in the source with saturated density $273\,$cm$^{-3}$. The low-energy $\textit{in-situ}$ UCN spectrum is alterable via accumulation and holding delays, opening new possibilities in fundamental and applied physics.

physics.ins-det↗

arXiv2025

Towards Precise Simulations and Inference for the Neutron EDM

Precision measurements of neutron properties, like its permanent electric dipole moment, rely on understanding complex experimental setups in detail. We show how the properties of stored and transported ultracold neutron ensembles can be simulated reliably. In a second step, we illustrate how they can be used for simulation-based inference of the parameters associated with underlying physics processes such as neutron capture or beta decay. Our proof of principle for simulation-based inference confronts a longstanding challenge with ultracold neutrons: low measurement statistics coupled with a complex apparatus.

nucl-th↗

arXiv2020

Characteristics of Al/Ge Schottky and Ohmic contacts at low temperatures

Schottky barrier contact has been fabricated by thermal deposition of Al on (100) Ge (impurity concentration~1010/cm3 at 80K) that shows extrinsic p-type to intrinsic n-type transition near 180K. Both p and n-type Ge exhibits ideal Schottky behaviour with low reverse current and near unity ideality factors obtained from the linear form of temperature dependent current-voltage (I-V) characteristics. The diode current at various temperatures change its direction at non-zero applied bias that reflects a shift in position of charge neutrality level (CNL) from the Fermi level of Ge. With the rise in temperature, Schottky barrier height (SBH) steadily increases for p-Ge that can be understood on the basis of observed variation in CNL. Values of SBH determined from the zero bias Richardson plot agrees well with that estimated from the Schottky-Mott rule for strongly pinned interface. Activation energies are determined from the Richardson plot at various forward voltages and found to decrease with applied bias for n-Ge but reduces to zero for p-Ge that shows work function similar to Al. Annealing of Al/Ge induces regrowth of p-type Al doped Ge layer that exhibits gradual reduction of Al concentration towards p-Ge crystal. Al doped Ge(P+)/Ge (P) junction thus fabricated shows linear current-voltage (I-V) characteristics in the extrinsic region (below 180K). In the intrinsic region (above 180K), rectification is observed in the I-V curve due to temperature dependent change in conductivity of both Al doped Ge layer and Ge crystal.

cond-mat.mtrl-sci↗

arXiv2019

Fabrication of p+ contact by thermally induced solid state regrowth of Al on p-type Ge crystal

Formation of p+ contact on Germanium is important for applications in diode detector and other electronic devices. In this work, thermally deposited Al on Ge crystal is annealed at 350oC followed by slow cooling for solid-state regrowth of Al-Ge p+ contact on Ge. Depth profile analysis by secondary ion mass spectrometry (SIMS) is carried out to investigate the occurrence of Al and Ge along the depth of the regrown Al-Ge layer. Evidence of regrowth is observed due to inter-diffusion of both Ge and Al across the layers although Ge diffusion in Al layer is found to be more prevalent. Thickness of the evaporated Al layer is varied to understand the diffusion profile of Al, Ge and estimate the depth of Al incorporation in Ge crystal underneath. Hall measurement at different depth of Al-Ge regrown layer reveals that Al impurity induces p+ doping in p-type Ge and its concentration gradually reduces towards the Ge crystal. Top surface of the Al-Ge layer exhibits lowest sheet resistance that varies with the thickness of the as deposited Al layer.

cond-mat.mtrl-sci↗