arXiv subjects

Hussam Amrouch

Publications and source records attributed to Hussam Amrouch.

At least 19 recordsLinked to original sources

arXiv2026

Long-Term and Short-Term Transistor Aging in Deep Neural Networks: Impact and Mitigation

Deep neural networks (DNNs) are used in a variety of real-world applications including, for example, image classification and speech recognition. The inference accuracy of DNN implemented on hardware in integrated circuits (ICs) degrades under phenomena such as transistor aging. Aging slows down the switching speed of transistors, resulting in system-level timing violations due to unsustainable clocks. To maintain reliability for the entire projected lifetime, designers add guardbands to prevent timing violations; however, adding large timing guardbands causes losses in performance (speed or throughput). This chapter provides a detailed discussion of the effects of long-term and short-term transistor aging on DNN inference accuracy. Furthermore, to mitigate aging effects on DNN's accuracy and keep them at bay, a methodology for aging-aware retraining is presented in order to generate a resilient DNN even when aggressive (i.e., smaller than required) guardbands are used. This improves the inference accuracy of the DNNs even in the presence of aging-induced degradation. These effects are discussed in this chapter along with mitigation strategies on a hardware implementation of a DNN for image classification on an off-the-shelf image dataset. The application of short-term aging as an excitation mechanism for the detection of hardware Trojans in integrated circuits is also briefly discussed.

cs.CR↗

arXiv2026

First Demonstration of 28 nm Fabricated FeFET-Based Nonvolatile 6T SRAM

With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory (SRAM) technology is the standard choice, its volatility requires a constant supply voltage to operate and store data. Especially in edge AI and IoT devices that often idle, the leakage power consumes a significant portion of the constrained power budget. For this, emerging non-volatile memory (NVM) technologies such as Resistive RAM and ferroelectric FET (FeFET) offer zero-standby power consumption but suffer from integration and performance tradeoffs. To harness the benefits of the different technologies, hybrid architectures have been proposed, combining SRAM with NVM devices. This work proposes a hybrid non-volatile SRAM (nvSRAM) architecture based on recently demonstrated PMOS FeFETs (p-FeFETs). By replacing the two PMOS pull-up transistors with p-FeFETs, we achieve non-volatility without additional transistors. The design supports seamless power-down and restore operation, thus eliminating standby leakage. SPICE simulations in a commercial 28 nm technology show read latency comparable to conventional SRAM, and on-silicon measurements show robust restore behavior. With this, we are the first to demonstrate a fabricated 6T nvSRAM cell design. The resulting cell achieves an area footprint of 99 $\mu m^2$. The read path remains identical to baseline SRAM, enabling high-speed operation while being non-volatile, making it ideal for IoT and edge systems.

cs.ET↗

arXiv2026

Self-Heating and Parasitic Effects in Multi-Tier CFET Design

In this article, we study the impact of self-heating effects (SHEs) and middle of line (MOL) and back-end of line (BEOL) induced parasitics on multi-tier CFET design, where multiple nanosheet devices are vertically stacked. We analyze and compare the 4-tier CFET design with the conventional 2-tier CFET, using TCAD models calibrated to experimental measurements. Additionally, TCAD simulations are used to model and analyze SHE-induced heat distribution and temperature profiles and to extract the detailed parasitic RC network from 3D models of CMOS inverters designed with full MOL and BEOL interconnects. At the device level, the maximum temperature rise (TMAX) caused by SHE in nFET and pFET devices of the 2-tier CFET architecture is 62 K and 74 K, respectively. Due to the increased distance from the substrate heat sink, the upper-tier nFET and pFET devices in the 4-tier design show higher TMAX of 83.5 K and 98.5 K and more heat trapping in the stacked layers. Furthermore, in the 4-tier CFET-based CMOS inverters, the BEOL-induced parasitic RCs are, respectively, 10 and 6.5 times higher in the top-tier than in the 2-tier CFET-based inverters. In the bottom tier, the corresponding parasitic RC elements are 6.26 and 2 times higher, respectively, than in the 2-tier inverters. Finally, compared to the 4-tier design without parasitics, the propagation delay of the top and bottom tier inverters increases by 10% and 8.2%, respectively, due to the interconnect parasitic RCs. For the conventional 2-tier inverter, the corresponding degradation of delay with parasitic RCs is 37.25%.

cs.ET↗

arXiv2025

Targeted Wearout Attacks in Microprocessor Cores

Negative-Bias Temperature Instability is a dominant aging mechanism in nanoscale CMOS circuits such as microprocessors. With this aging mechanism, the rate of device aging is dependent not only on overall operating conditions, such as heat, but also on user controllable inputs to the transistors. This dependence on input implies a possible timing fault-injection attack wherein a targeted path of logic is intentionally degraded through the purposeful, software-driven actions of an attacker, rendering a targeted bit effectively stuck. In this work, we describe such an attack mechanism, which we dub a "$\textbf{Targeted Wearout Attack}$", wherein an attacker with sufficient knowledge of the processor core, executing a carefully crafted software program with only user privilege, is able to degrade a functional unit within the processor with the aim of eliciting a particular desired incorrect calculation in a victim application. Here we give a general methodology for the attack. We then demonstrate a case study where a targeted path within the fused multiply-add pipeline in a RISC-V CPU sees a $>7x$ increase in wear over time than would be experienced under typical workloads. We show that an attacker could leverage such an attack, leading to targeted and silent data corruption in a co-running victim application using the same unit.

cs.CR↗

arXiv2025

Carbon-Efficient 3D DNN Acceleration: Optimizing Performance and Sustainability

As Deep Neural Networks (DNNs) continue to drive advancements in artificial intelligence, the design of hardware accelerators faces growing concerns over embodied carbon footprint due to complex fabrication processes. 3D integration improves performance but introduces sustainability challenges, making carbon-aware optimization essential. In this work, we propose a carbon-efficient design methodology for 3D DNN accelerators, leveraging approximate computing and genetic algorithm-based design space exploration to optimize Carbon Delay Product (CDP). By integrating area-efficient approximate multipliers into Multiply-Accumulate (MAC) units, our approach effectively reduces silicon area and fabrication overhead while maintaining high computational accuracy. Experimental evaluations across three technology nodes (45nm, 14nm, and 7nm) show that our method reduces embodied carbon by up to 30% with negligible accuracy drop.

cs.AR↗

arXiv2025

Kolmogorov-Arnold Network for Transistor Compact Modeling

Neural network (NN)-based transistor compact modeling has recently emerged as a transformative solution for accelerating device modeling and SPICE circuit simulations. However, conventional NN architectures, despite their widespread adoption in state-of-the-art methods, primarily function as black-box problem solvers. This lack of interpretability significantly limits their capacity to extract and convey meaningful insights into learned data patterns, posing a major barrier to their broader adoption in critical modeling tasks. This work introduces, for the first time, Kolmogorov-Arnold network (KAN) for the transistor - a groundbreaking NN architecture that seamlessly integrates interpretability with high precision in physics-based function modeling. We systematically evaluate the performance of KAN and Fourier KAN for FinFET compact modeling, benchmarking them against the golden industry-standard compact model and the widely used MLP architecture. Our results reveal that KAN and FKAN consistently achieve superior prediction accuracy for critical figures of merit, including gate current, drain charge, and source charge. Furthermore, we demonstrate and improve the unique ability of KAN to derive symbolic formulas from learned data patterns - a capability that not only enhances interpretability but also facilitates in-depth transistor analysis and optimization. This work highlights the transformative potential of KAN in bridging the gap between interpretability and precision in NN-driven transistor compact modeling. By providing a robust and transparent approach to transistor modeling, KAN represents a pivotal advancement for the semiconductor industry as it navigates the challenges of advanced technology scaling.

cs.LG↗

arXiv2025

Late Breaking Results: Leveraging Approximate Computing for Carbon-Aware DNN Accelerators

The rapid growth of Machine Learning (ML) has increased demand for DNN hardware accelerators, but their embodied carbon footprint poses significant environmental challenges. This paper leverages approximate computing to design sustainable accelerators by minimizing the Carbon Delay Product (CDP). Using gate-level pruning and precision scaling, we generate area-aware approximate multipliers and optimize the accelerator design with a genetic algorithm. Results demonstrate reduced embodied carbon while meeting performance and accuracy requirements.

cs.AR↗

arXiv2025

TReCiM: Lower Power and Temperature-Resilient Multibit 2FeFET-1T Compute-in-Memory Design

Compute-in-memory (CiM) emerges as a promising solution to solve hardware challenges in artificial intelligence (AI) and the Internet of Things (IoT), particularly addressing the "memory wall" issue. By utilizing nonvolatile memory (NVM) devices in a crossbar structure, CiM efficiently accelerates multiply-accumulate (MAC) computations, the crucial operations in neural networks and other AI models. Among various NVM devices, Ferroelectric FET (FeFET) is particularly appealing for ultra-low-power CiM arrays due to its CMOS compatibility, voltage-driven write/read mechanisms and high ION/IOFF ratio. Moreover, subthreshold-operated FeFETs, which operate at scaling voltages in the subthreshold region, can further minimize the power consumption of CiM array. However, subthreshold-FeFETs are susceptible to temperature drift, resulting in computation accuracy degradation. Existing solutions exhibit weak temperature resilience at larger array size and only support 1-bit. In this paper, we propose TReCiM, an ultra-low-power temperature-resilient multibit 2FeFET-1T CiM design that reliably performs MAC operations in the subthreshold-FeFET region with temperature ranging from 0 to 85 degrees Celcius at scale. We benchmark our design using NeuroSim framework in the context of VGG-8 neural network architecture running the CIFAR-10 dataset. Benchmarking results suggest that when considering temperature drift impact, our proposed TReCiM array achieves 91.31% accuracy, with 1.86% accuracy improvement compared to existing 1-bit 2T-1FeFET CiM array. Furthermore, our proposed design achieves 48.03 TOPS/W energy efficiency at system level, comparable to existing designs with smaller technology feature sizes.

cs.ET↗

arXiv2024

Leveraging Highly Approximated Multipliers in DNN Inference

In this work, we present a control variate approximation technique that enables the exploitation of highly approximate multipliers in Deep Neural Network (DNN) accelerators. Our approach does not require retraining and significantly decreases the induced error due to approximate multiplications, improving the overall inference accuracy. As a result, our approach enables satisfying tight accuracy loss constraints while boosting the power savings. Our experimental evaluation, across six different DNNs and several approximate multipliers, demonstrates the versatility of our approach and shows that compared to the accurate design, our control variate approximation achieves the same performance, 45% power reduction, and less than 1% average accuracy loss. Compared to the corresponding approximate designs without using our technique, our approach improves the accuracy by 1.9x on average.

cs.AR↗

arXiv2024

Energy-Efficient Cryogenic Ternary Content Addressable Memory using Ferroelectric SQUID

Ternary content addressable memories (TCAMs) are useful for certain computing tasks since they allow us to compare a search query with a whole dataset stored in the memory array. They can also unlock unique advantages for cryogenic applications like quantum computing, high-performance computing, and space exploration by improving speed and energy efficiency through parallel searching. This paper explores the design and implementation of a cryogenic ternary content addressable memory based on ferroelectric superconducting quantum interference devices (FeSQUIDs). The use of FeSQUID for designing the TCAM provides several unique advantages. First, we can get binary decisions (zero or non-zero voltage) for matching and mismatching conditions without using any peripheral circuitry. Moreover, the proposed TCAM needs ultra-low energy (1.36 aJ and 26.5 aJ average energy consumption for 1-bit binary and ternary search, respectively), thanks to the use of energy-efficient SQUIDs. Finally, we show the efficiency of FeSQUID through the brain-inspired application of Hyperdimensional Computing (HDC). Here, the FeSQUID-based TCAM implements the associative memory to support the highly parallel search needed in the inference step. We estimate an energy consumption of 89.4 fJ per vector comparison using a vector size of 10,000 bits. We also compare the FeSQUID-based TCAM array with the 5nm FinFET-based cryogenic SRAM-based TCAM array and observe that the proposed FeSQUID-based TCAM array consumes over one order of magnitude lower energy while performing the same task.

cs.ET↗

arXiv2024

Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET

Compute-in-memory (CiM) is a promising solution for addressing the challenges of artificial intelligence (AI) and the Internet of Things (IoT) hardware such as 'memory wall' issue. Specifically, CiM employing nonvolatile memory (NVM) devices in a crossbar structure can efficiently accelerate multiply-accumulation (MAC) computation, a crucial operator in neural networks among various AI models. Low power CiM designs are thus highly desired for further energy efficiency optimization on AI models. Ferroelectric FET (FeFET), an emerging device, is attractive for building ultra-low power CiM array due to CMOS compatibility, high ION/IOFF ratio, etc. Recent studies have explored FeFET based CiM designs that achieve low power consumption. Nevertheless, subthreshold-operated FeFETs, where the operating voltages are scaled down to the subthreshold region to reduce array power consumption, are particularly vulnerable to temperature drift, leading to accuracy degradation. To address this challenge, we propose a temperature-resilient 2T-1FeFET CiM design that performs MAC operations reliably at subthreahold region from 0 to 85 Celsius, while consuming ultra-low power. Benchmarked against the VGG neural network architecture running the CIFAR-10 dataset, the proposed 2T-1FeFET CiM design achieves 89.45% CIFAR-10 test accuracy. Compared to previous FeFET based CiM designs, it exhibits immunity to temperature drift at an 8-bit wordlength scale, and achieves better energy efficiency with 2866 TOPS/W.

cs.ET↗

arXiv2023

Variability-Aware Approximate Circuit Synthesis via Genetic Optimization

One of the major barriers that CMOS devices face at nanometer scale is increasing parameter variation due to manufacturing imperfections. Process variations severely inhibit the reliable operation of circuits, as the operational frequency at the nominal process corner is insufficient to suppress timing violations across the entire variability spectrum. To avoid variability-induced timing errors, previous efforts impose pessimistic and performance-degrading timing guardbands atop the operating frequency. In this work, we employ approximate computing principles and propose a circuit-agnostic automated framework for generating variability-aware approximate circuits that eliminate process-induced timing guardbands. Variability effects are accurately portrayed with the creation of variation-aware standard cell libraries, fully compatible with standard EDA tools. The underlying transistors are fully calibrated against industrial measurements from Intel 14nm FinFET in which both electrical characteristics of transistors and variability effects are accurately captured. In this work, we explore the design space of approximate variability-aware designs to automatically generate circuits of reduced variability and increased performance without the need for timing guardbands. Experimental results show that by introducing negligible functional error of merely $5.3\times 10^{-3}$, our variability-aware approximate circuits can be reliably operated under process variations without sacrificing the application performance.

cs.AR↗

arXiv2023

HW/SW Codesign for Robust and Efficient Binarized SNNs by Capacitor Minimization

Using accelerators based on analog computing is an efficient way to process the immensely large workloads in Neural Networks (NNs). One example of an analog computing scheme for NNs is Integrate-and-Fire (IF) Spiking Neural Networks (SNNs). However, to achieve high inference accuracy in IF-SNNs, the analog hardware needs to represent current-based multiply-accumulate (MAC) levels as spike times, for which a large membrane capacitor needs to be charged for a certain amount of time. A large capacitor results in high energy use, considerable area cost, and long latency, constituting one of the major bottlenecks in analog IF-SNN implementations. In this work, we propose a HW/SW Codesign method, called CapMin, for capacitor size minimization in analog computing IF-SNNs. CapMin minimizes the capacitor size by reducing the number of spike times needed for accurate operation of the HW, based on the absolute frequency of MAC level occurrences in the SW. To increase the operation of IF-SNNs to current variation, we propose the method CapMin-V, which trades capacitor size for protection based on the reduced capacitor size found in CapMin. In our experiments, CapMin achieves more than a 14$\times$ reduction in capacitor size over the state of the art, while CapMin-V achieves increased variation tolerance in the IF-SNN operation, requiring only a small increase in capacitor size.

cs.AR↗

arXiv2023

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a non-ferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state and thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation have been performed on fully-depleted silicon-on-insulator (FDSOI) FeFETs integrated on 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the non-ferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths.

cs.ET↗

arXiv2023

HW/SW Co-design for Reliable TCAM-based In-memory Brain-inspired Hyperdimensional Computing

Brain-inspired hyperdimensional computing (HDC) is continuously gaining remarkable attention. It is a promising alternative to traditional machine-learning approaches due to its ability to learn from little data, lightweight implementation, and resiliency against errors. However, HDC is overwhelmingly data-centric similar to traditional machine-learning algorithms. In-memory computing is rapidly emerging to overcome the von Neumann bottleneck by eliminating data movements between compute and storage units. In this work, we investigate and model the impact of imprecise in-memory computing hardware on the inference accuracy of HDC. Our modeling is based on 14nm FinFET technology fully calibrated with Intel measurement data. We accurately model, for the first time, the voltage-dependent error probability in SRAM-based and FeFET-based in-memory computing. Thanks to HDC's resiliency against errors, the complexity of the underlying hardware can be reduced, providing large energy savings of up to 6x. Experimental results for SRAM reveal that variability-induced errors have a probability of up to 39 percent. Despite such a high error probability, the inference accuracy is only marginally impacted. This opens doors to explore new tradeoffs. We also demonstrate that the resiliency against errors is application-dependent. In addition, we investigate the robustness of HDC against errors when the underlying in-memory hardware is realized using emerging non-volatile FeFET devices instead of mature CMOS-based SRAMs. We demonstrate that inference accuracy does remain high despite the larger error probability, while large area and power savings can be obtained. All in all, HW/SW co-design is the key for efficient yet reliable in-memory hyperdimensional computing for both conventional CMOS technology and upcoming emerging technologies.

cs.ET↗

arXiv2023

Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs

Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM owing to their high ON/OFF ratio, non-volatility, and CMOS compatibility. However, conventional single-gate FeFETs (SG-FeFETs) suffer from relatively high write voltage, low endurance, potential read disturbance, and face scaling challenges. Recently, a double-gate FeFET (DG-FeFET) has been proposed and outperforms SG-FeFETs in many aspects. This paper investigates TCAM design challenges specific to DG-FeFETs and introduces a novel 1.5T1Fe TCAM design based on DG-FeFETs. A 2-step search with early termination is employed to reduce the cell area and improve energy efficiency. A shared driver design is proposed to reduce the peripherals area. Detailed analysis and SPICE simulation show that the 1.5T1Fe DG-TCAM leads to superior search speed and energy efficiency. The 1.5T1Fe TCAM design can also be built with SG-FeFETs, which achieve search latency and energy improvement compared with 2FeFET TCAM.

cs.ET↗

arXiv2022

AppGNN: Approximation-Aware Functional Reverse Engineering using Graph Neural Networks

The globalization of the Integrated Circuit (IC) market is attracting an ever-growing number of partners, while remarkably lengthening the supply chain. Thereby, security concerns, such as those imposed by functional Reverse Engineering (RE), have become quintessential. RE leads to disclosure of confidential information to competitors, potentially enabling the theft of intellectual property. Traditional functional RE methods analyze a given gate-level netlist through employing pattern matching towards reconstructing the underlying basic blocks, and hence, reverse engineer the circuit's function. In this work, we are the first to demonstrate that applying Approximate Computing (AxC) principles to circuits significantly improves the resiliency against RE. This is attributed to the increased complexity in the underlying pattern-matching process. The resiliency remains effective even for Graph Neural Networks (GNNs) that are presently one of the most powerful state-of-the-art techniques in functional RE. Using AxC, we demonstrate a substantial reduction in GNN average classification accuracy-- from 98% to a mere 53%. To surmount the challenges introduced by AxC in RE, we propose the highly promising AppGNN platform, which enables GNNs (still being trained on exact circuits) to: (i) perform accurate classifications, and (ii) reverse engineer the circuit functionality, notwithstanding the applied approximation technique. AppGNN accomplishes this by implementing a novel graph-based node sampling approach that mimics generic approximation methodologies, requiring zero knowledge of the targeted approximation type. We perform an extensive evaluation and show that, using our method, we can improve the classification accuracy from 53% to 81% when classifying approximate adder circuits that have been generated using evolutionary algorithms, which our method is oblivious of.

cs.CR↗

arXiv2022

GNN4REL: Graph Neural Networks for Predicting Circuit Reliability Degradation

Process variations and device aging impose profound challenges for circuit designers. Without a precise understanding of the impact of variations on the delay of circuit paths, guardbands, which keep timing violations at bay, cannot be correctly estimated. This problem is exacerbated for advanced technology nodes, where transistor dimensions reach atomic levels and established margins are severely constrained. Hence, traditional worst-case analysis becomes impractical, resulting in intolerable performance overheads. Contrarily, process-variation/aging-aware static timing analysis (STA) equips designers with accurate statistical delay distributions. Timing guardbands that are small, yet sufficient, can then be effectively estimated. However, such analysis is costly as it requires intensive Monte-Carlo simulations. Further, it necessitates access to confidential physics-based aging models to generate the standard-cell libraries required for STA. In this work, we employ graph neural networks (GNNs) to accurately estimate the impact of process variations and device aging on the delay of any path within a circuit. Our proposed GNN4REL framework empowers designers to perform rapid and accurate reliability estimations without accessing transistor models, standard-cell libraries, or even STA; these components are all incorporated into the GNN model via training by the foundry. Specifically, GNN4REL is trained on a FinFET technology model that is calibrated against industrial 14nm measurement data. Through our extensive experiments on EPFL and ITC-99 benchmarks, as well as RISC-V processors, we successfully estimate delay degradations of all paths -- notably within seconds -- with a mean absolute error down to 0.01 percentage points.

cs.LG↗