arXiv subjects

Hwan Young Choi

Publications and source records attributed to Hwan Young Choi.

4 recordsLinked to original sources

arXiv2021

Evolution of electronic structure of Ru-doped single-crystal iridiates, Sr$_2$Ir$_{1-x}$Ru$_x$O$_4$

We investigated Ru-doped single-crystal 5$d$ iridiates, Sr$_2$Ir$_{1-x}$Ru$_x$O$_{4}$, at three different doping concentrations ($x =$ 0.01, 0.07 and 0.10) using optical spectroscopy. The undoped pristine compound (Sr$_2$IrO$_{4}$) is known as a novel $J_{eff}$ = 1/2 Mott insulator. Remarkably, the optical conductivity spectra of all three samples exhibited the insulating behavior, although we observed weak Drude components in the optical conductivity spectra down to the lowest temperature of 30 K. The charge-carrier densities of the Ru-doped iridiates estimated from the Drude components are significantly smaller than the expected values estimated from the nominal Ru-doping concentrations. Herein, we provide temperature- and doping-dependent electronic structure evolution of Ru-doped iridiates. We expect that our results will be useful for understanding the intriguing Ru-doping-dependent properties of 5$d$ iridiate Sr$_2$IrO$_{4}$.

cond-mat.str-el↗

arXiv2021

Stable hump-like Hall effect and non-coplanar spin textures in SrRuO$_3$ ultrathin film

We observed a hump-like feature in Hall effects of SrRuO$_3$ ultrathin films, and systematically investigated it with controlling thicknesses, temperatures and magnetic fields. The hump-like feature is extremely stable, even surviving as a magnetic field is tilted by as much as 85$^\circ$. Based on the atomic-level structural analysis of a SrRuO$_3$ ultrathin film with a theoretical calculation, we reveal that atomic rumplings at the thin-film surface enhance Dzyaloshinskii-Moriya interaction, which can generate stable chiral spin textures and a hump-like Hall effect. Moreover, temperature dependent resonant X-ray measurements at Ru L-edge under a magnetic field showed that the intensity modulation of unexpected peaks was correlated with the hump region in the Hall effect. We verify that the two-dimensional property of ultrathin films generates stable non-coplanar spin textures having a magnetic order in a ferromagnetic oxide material.

cond-mat.str-el↗

arXiv2019

Highly nonlinear magnetoelectric effect in antiferromagnetic Co4Ta2O9 single crystals

Strongly correlated materials with multiple order parameters provide unique insights into the fundamental interactions in condensed matter systems and present opportunities for innovative technological applications. A class of antiferromagnetic honeycomb lattices compounds, A4B2O9 (A = Co, Fe, Mn; B = Nb, Ta), have been explored owing to the occurrence of linear magnetoelectricity. We observe a highly nonlinear magnetoelectric effect on single crystals of Co4Ta2O9 (CTO), distinctive from the linear behavior in the isostructural Co4Nb2O9. Ferroelectricity emerges primarily along the [110] direction under magnetic fields, with the onset of antiferromagnetic order at TN = 20.5 K. For in-plane magnetic field, a spin-flop occurs at HC ~ 0.3 T, above which the ferroelectric polarization gradually becomes negative and reaches a broad minimum. Upon increasing magnetic field further, the polarization crosses zero and increases continuously to ~60 uC/m2 at 9 T. In contrast, the polarization for a magnetic field perpendicular to the hexagonal plane increases monotonously and reaches ~80 uC/m2 at 9 T. This observation of a strongly nonlinear magnetoelectricity suggests that two types of inequivalent Co2+ sublattices generate magnetic field-dependent ferroelectric polarization with opposite signs. These results motivate fundamental and applied research on the intriguing magnetoelectric characteristics of these honeycomb lattice materials.

cond-mat.str-el↗

arXiv2018

Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate

The novel electronic state of the canted antiferromagnetic (AFM) insulator, strontium iridate (Sr2IrO4) has been well described by the spin-orbit-entangled isospin Jeff = 1/2, but the role of isospin in transport phenomena remains poorly understood. In this study, antiferromagnet-based spintronic functionality is demonstrated by combining unique characteristics of the isospin state in Sr2IrO4. Based on magnetic and transport measurements, large and highly anisotropic magnetoresistance (AMR) is obtained by manipulating the antiferromagnetic isospin domains. First-principles calculations suggest that electrons whose isospin directions are strongly coupled to in-plane net magnetic moment encounter the isospin mismatch when moving across antiferromagnetic domain boundaries, which generates a high resistance state. By rotating a magnetic field that aligns in-plane net moments and removes domain boundaries, the macroscopically-ordered isospins govern dynamic transport through the system, which leads to the extremely angle-sensitive AMR. As with this work that establishes a link between isospins and magnetotransport in strongly spin-orbit-coupled AFM Sr2IrO4, the peculiar AMR effect provides a beneficial foundation for fundamental and applied research on AFM spintronics.

cond-mat.str-el↗