arXiv subjects

Hyeon Han

Publications and source records attributed to Hyeon Han.

8 recordsLinked to original sources

arXiv2026

Polarization-wave propagation as a biophysical mechanism of visual cognition

Recent experimental studies indicate that visual cognition is accompanied by slowly propagating biophysical travelling waves in cortical tissue. Here we propose polarization waves as a coherent physical framework for visual cognition. We first compute the propagation of scalar potential fields generated by impressed ionic currents in the primary visual cortex using a telegraph-type model and extract the velocity of the moving potential ridge. By exploiting the linear convolution structure, we then demonstrate that the scalar potential field and the polarization wave, arising from slowly oscillating neuronal dipoles, propagate with identical velocities. Remarkably, this velocity coincides with the independently predicted propagation speed of the cognitively inferred modulated wave (~1.5 cm/s). Because ionic influx entering a single optic-nerve channel integrates signals from more than a hundred photoreceptors, the resulting polarization field necessarily spans a distribution of wave numbers. We show that amplitudes of such multi-k polarization waves undergo dispersive spreading in time, which possibly suppresses cross-channel interference in visual perception.

q-bio.NC↗

arXiv2025

Interferometric evidence of non-volatile anomalous phase shifts in exchange-spin-split Josephson supercurrent diodes

The recent realization of zero-field, polarity-reversible supercurrent rectification in proximity-magnetized Rashba-type Pt Josephson junctions (JJs) enables the development of superconducting logic circuits and cryogenic memory applications. Here, we demonstrate a non-volatile anomalous phase shift {\phi}_0 directly probed via superconducting quantum interferometry, providing phase-sensitive evidence of spontaneous time-reversal symmetry breaking in these Rashba-type systems. By replacing the Pt barrier with 5d or 4d element layers exhibiting different (para-)magnetic susceptibilities, spin-orbit coupling strengths, and electronic band structures, we elucidate the role of proximity effects in governing zero-field diode behavior. Ta (W) JJs exhibit zero-field diode efficiencies of ~17% (~5%) at 2 K, which are slightly (significantly) lower than those of Pt JJs. Notably, the diode polarity in Ta and W JJs is reversed relative to Pt JJs. Combined with the large zero-field diode efficiency (~15% at 2 K) observed in highly magnetic-susceptible Pd JJs, these results show that non-volatile {\phi}_0 and, consequently, zero-field diode performance can be tuned through proximity engineering of interfacial magnetic ordering and Rashba spin-orbit interaction.

cond-mat.supr-con↗

arXiv2022

Giant shape-memory effect in twisted ferroic nanocomposites

The shape recovery ability of shape-memory alloys vanishes below a critical size (~50nm), which prevents their practical applications at the nanoscale. In contrast, ferroic materials, even when scaled down to dimensions of a few nanometers, exhibit actuation strain through domain switching, though the generated strain is modest (~1%). Here, we develop free-standing twisted architectures of nanoscale ferroic oxides showing shape-memory effect with a giant recoverable strain (>10%). The twisted geometrical design amplifies the strain generated during ferroelectric domain switching, which cannot be achieved in bulk ceramics or substrate-bonded thin films. The twisted ferroic nanocomposites allow us to overcome the size limitations in traditional shape-memory alloys and opens new avenues in engineering large-stroke shape-memory materials for small-scale actuating devices such as nanorobots and artificial muscle fibrils.

cond-mat.mtrl-sci↗

arXiv2022

Li iontronics in single-crystalline T-Nb2O5 thin films with vertical ionic transport channels

The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure that has two-dimensional (2D) layers with very low steric hindrance allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its electronic applications have not yet been realized, likely due to its large orthorhombic unit cell along with the existence of many polymorphs. Here we demonstrate the epitaxial growth of single-crystalline T-Nb2O5 thin films, critically with the ionic transport channels oriented perpendicular to the film's surface. These vertical 2D channels enable fast Li-ion migration which we show gives rise to a colossal insulator-metal transition where the resistivity drops by eleven orders of magnitude due to the population of the initially empty Nb 4d0 states by electrons. Moreover, we reveal multiple unexplored phase transitions with distinct crystal and electronic structures over a wide range of Li-ion concentrations by comprehensive in situ experiments and theoretical calculations, that allow for the reversible and repeatable manipulation of these phases and their distinct electronic properties. This work paves the way to the exploration of novel thin films with ionic channels and their potential applications.

cond-mat.mtrl-sci↗

arXiv2021

Role of two-dimensional Ising superconductivity in the non-equilibrium quasiparticle spin-to-charge conversion efficiency

Non-equilibrium studies of two-dimensional (2D) superconductors (SCs) with Ising spin-orbit coupling are prerequisite for their successful application to equilibrium spin-triplet Cooper pairs and, potentially, Majorana fermions. By taking advantage of the recent discoveries of 2D SCs and their compatibility with any other materials, we fabricate here non-local magnon devices to examine how such 2D Ising superconductivity affects the conversion efficiency of magnon spin to quasiparticle charge in superconducting flakes of 2H-NbSe2 transferred onto ferrimagnetic insulating Y3Fe5O12. Comparison with a reference device based on a conventionally paired superconductor shows that the Y3Fe5O12-induced in-plane (IP) exchange spin-splitting in the NbSe2 flake is hindered by its inherent out-of-plane (OOP) spin-orbit-field, which, in turn, limits the transition-state enhancement of the spin-to-charge conversion efficiency. Our out-of-equilibrium study highlights the significance of symmetry matching between underlying Cooper pairs and exchange-induced spin-splitting for the giant transition-state spin-to-charge conversion and may have implications towards proximity-engineered spin-polarized triplet pairing via tuning the relative strength of IP exchange and OOP spin-orbit fields in ferromagnetic insulator/2D Ising SC bilayers.

cond-mat.supr-con↗

arXiv2019

Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films

Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.

cond-mat.mes-hall↗

arXiv2017

Electron-Hole Separation in Ferroelectric Oxides for Efficient Photovoltaic Responses

Despite their potential to exceed the theoretical Shockley-Queisser limit, ferroelectric photovoltaics (FPVs) have performed inefficiently due to their extremely low photocurrents. Incorporating Bi2FeCrO6 (BFCO) as the light absorber in FPVs has recently led to impressively high and record photocurrents [Nechache et al. Nature Photon. 2015, 9, 61], reviving the FPV field. However, our understanding of this remarkable phenomenon is far from satisfactory. Here, we use first-principles calculations to determine that such excellent performance mainly lies in the efficient separation of electron-hole (e-h) pairs. We show that photoexcited electrons and holes in BFCO are spatially separated on the Fe and Cr sites, respectively. This separation is much more pronounced in disordered BFCO phases, which show exceptional PV responses. We further set out to design a strategy for next-generation FPVs, not limited to BFCO, by exploring 44 additional Bi-based double-perovskite oxides. We suggest 9 novel active-layer materials that can offer strong e-h separations and a desired band gap energy for application in FPVs. Our work indicates that charge separation is the most important issue to be addressed for FPVs to compete with conventional devices.

cond-mat.mtrl-sci↗

arXiv2017

Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps

Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic effects using hexagonal ferrite (h-RFeO3) thin films having narrow band gaps of ~1.2 eV, where R denotes rare-earth ions. FPVs with narrow band gaps suggests their potential applicability as photovoltaic and optoelectronic devices. The h-RFeO3 films further exhibit reasonably large ferroelectric polarizations, which possibly reduces a rapid recombination rate of the photo-generated electron-hole pairs. The power conversion efficiency (PCE) of h-RFeO3 thin-film devices is sensitive on the magnitude of polarization. In the case of h-TmFeO3 (h-TFO) thin film, the measured PCE is twice as large as that of the BiFeO3 thin film, a prototypic FPV. We have further shown that the switchable photovoltaic effect dominates over the unswitchable internal field effect arising from the net built-in potential. This work thus demonstrates a new class of FPVs towards high-efficiency solar cell and optoelectronic applications.

cond-mat.mtrl-sci↗