arXiv subjects

Hyeon Suk Shin

Publications and source records attributed to Hyeon Suk Shin.

At least 19 recordsLinked to original sources

arXiv2026

Higher-Order Topological Phase in the Two-Dimensional Type-IV Magnet MgCr$_2$O$_4$

Type-IV two-dimensional (2D) magnetism-a newly classified collinear magnetic phase featuring nonrelativistic spin degeneracy and spin-orbit-coupling-induced momentum-dependent spin splitting-extends the symmetry classification of collinear magnets, opening new opportunities for unconventional topological quantum states. Here, we reveal that the recently proposed two-dimensional type-IV 2D magnet MgCr$_2$O$_4$ hosts an intrinsic higher-order topological insulating phase, featuring $\mathcal{C}_{3z}$-protected corner states and a nontrivial rotational topological invariant of $χ^{(3)}$ = $\{-2,4\}$ with a quantized fractional corner charge of $4e/3$. Spin-orbit coupling breaks the spin-degeneracy-enforcing symmetry $[C_{2}||M_z]$ while preserving the crystalline $\mathcal{C}_{3z}$ rotational symmetry that protects the higher-order topological phase, thereby enabling spin splitting to coexist with the nontrivial topology. Furthermore, the higher-order topological phase remains intact throughout a wide range of biaxial strains without band-gap closing and topological phase transition, demonstrating the robustness of the symmetry-protected topological state against external perturbations. Our work establishes a direct connection between type-IV magnetic system and higher-order topology, providing a new route for symmetry-engineered magnetic topological quantum states.

physics.comp-ph↗

arXiv2026

Floquet-Engineered Odd-Parity Altermagnetic Higher-Order Topology in a Two-Dimensional Antiferromagnet Cr$_2$CH$_2$

Periodic driving provides a platform to dynamically tailor quantum states of matter, yet its impact on symmetry-protected topological phases remains incompletely understood. Here, we demonstrate that periodic driving enables the realization of an odd-parity altermagnetic (AM) higher-order topological insulator (HOTI) phase in the Cr$_2$CH$_2$ monolayer. In equilibrium, Cr$_2$CH$_2$ is a 2D antiferromagnetic (AFM) HOTI protected by $\mathcal C_3$ rotational symmetry, characterized by a symmetry indicator $χ^{(3)}$ = $\{-2,1\}$ and robust corner states. Under circularly polarized light (CPL), the system develops a f-wave altermagnetic state governed by the symmetry $[C_{2}||\overline{3}_{001}]$ with odd-parity spin splitting. Despite substantial Floquet-induced band renormalization, the $\mathcal C_3$-protected corner states remain intact over a broad range of driving strengths, highlighting the altermagnetic higher-order topology under Floquet driving. As the light intensity increases, the system gradually evolves into an altermagnetic semimetallic state. These results establish a direct connection between magnetism and topology in a periodically driven AFM system, offering a route toward the control of coupled spin and topological transport.

physics.comp-ph↗

arXiv2026

Second-order topology in two-dimensional azulenoid kekulene carbon lattices

The discovery of higher-order topological insulator (HOTI) has established a new paradigm for understanding symmetry-constrained boundary electronic states. Here, based on first-principles calculations, we demonstrate the emergence of HOTI phase in organic lattices of two-dimensional azulenoid-kekulene-type carbon allotropes, namely AKC-[3,3] and AKC-[6,0]. Enabled by the $C_6$ rotational symmetry, the nontrivial bulk topology is confirmed through the topological invariant and fractionally quantized corner charge, giving $\{[M^{(I)}_{2}],[K^{(3)}_{2}]\}$ = $\{0,2\}$ and $Q_{\mathrm{corner}} = e/3$, respectively, accompanied by the emergence of exotic corner states in nanoflakes. Notably, the structural modifications are explored, revealing that in the derived structure PAK-[6,0], whose corner-localized states are preserved, highlighting the robustness of the higher-order topological phase. These findings highlight azulenoid-kekulene-based carbon allotropes as a promising platform to explore the interplay between structural design, crystalline symmetry, and higher-order topological boundary responses in two dimensional carbon systems.

cond-mat.mtrl-sci↗

arXiv2026

Ubiquitous Antiparallel Domains in 2D Hexagonal Boron Nitride Uncovered by Interferometric Nonlinear Optical Imaging

Hexagonal boron nitride (hBN) supports a wide range of two-dimensional (2D) technologies, yet assessing its crystalline quality over large areas remains a fundamental challenge. Both antiparallel domains, an intrinsic outcome of epitaxy on high-symmetry substrates, and associated structural defects have long evaded optical detection. Here, we show that interferometric second-harmonic generation (SHG) imaging provides a powerful, nondestructive probe of lattice orientation and structural integrity in chemical vapor deposition-grown hBN. This approach reveals the ubiquitous formation of antiparallel domains and quantifies their impact on crystalline order. SHG intensity also emerges as a direct optical metric of domain disorder, spanning three orders of magnitude across films produced by ten different growth routes. Correlation with Raman spectroscopy establishes a unified framework for evaluating crystalline quality. Beyond hBN, this method offers a high-throughput route to wide-area structural imaging in various non-centrosymmetric materials, advancing their deployment in electronics, photonics, and quantum technologies.

cond-mat.mtrl-sci↗

arXiv2026

Indium selenides for next-generation low-power computing devices

As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technology has become increasingly urgent. While two-dimensional (2D) transition metal dichalcogenides have been extensively investigated, van der Waals indium selenides--particularly InSe and In2Se3--offer a compelling alternative with distinct advantages for next-generation electronics. Unlike conventional 2D semiconductors, indium selenides combine exceptional electron mobility (exceeding 1,000 cm^2V^-1s^-1), high thermal velocity (>2x10^7 cm/s), thickness-tunable bandgaps (0.97-2.5 eV), and unique phase-dependent ferroelectric properties, enabling both high-performance logic and non-volatile memory functions within a single material system. This perspective critically evaluates the materials properties, fabrication challenges, and device applications of indium selenides, examining their potential to surpass silicon in ultra-scaled transistors through ballistic transport while simultaneously offering ferroelectric memory capabilities impossible in conventional semiconductors. We analyze recent breakthroughs in ballistic InSe transistors, tunnel field-effect transistors, and In2Se3-based ferroelectric devices for information storage, and identify key research priorities for addressing persistent challenges in scalable synthesis, phase control, and oxidation prevention. By bridging fundamental materials science with practical device engineering, we provide a roadmap for translating the exceptional properties of indium selenides into commercially viable, low-power computing technologies that can overcome the limitations of silicon while enabling novel computing architectures.

cond-mat.mtrl-sci↗

arXiv2025

Dual-Polarization SHG Interferometry for Imaging Antiparallel Domains and Stacking Angles of 2D Heterocrystals

Optical second-harmonic generation (SHG) enables orientational polarimetry for crystallographic analysis and domain imaging of various materials. However, conventional intensity polarimetry, which neglects phase information, fails to resolve antiparallel domains and to describe two-dimensional heterostructures, which represent a new class of van der Waals-bound composite crystals. In this work, we report dual-polarization spectral phase interferometry (DP-SPI) and establish a generalized SHG superposition model that incorporates the observables of DP-SPI. Antiparallel domains of monolayer transition metal dichalcogenides (TMDs) were successfully imaged with distinction, validating the interferometric polarimetry. From DP interferograms of TMD heterobilayers, the orientation of each layer could be determined, enabling layer-resolved probing. By employing the superposition model, we also demonstrate the photonic design and fabrication of ternary TMD heterostructures for circularly polarized SHG. These methods, providing comprehensive SHG measurements and theoretical description, can be extended to heterostructures consisting of more than two constituent layers and are not limited to TMDs or 2D materials.

physics.optics↗

arXiv2025

Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects

This study focuses on amorphous boron nitride ($\rm α$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects. Owing to its ultralow dielectric constant and robust barrier properties, $\rm α$-BN is examined as an alternative to conventional low-k dielectrics. The investigation primarily employs theoretical modelling, using a Gaussian Approximation Potential, to simulate and understand the atomic-level interactions. This machine learning-based approach allows the performance of realistic simulations of amorphous structure of $\rm α$-BN, enabling the exploration of the impact of different film morphologies on barrier efficacy. Furthermore, we studied the electronic and optical properties of the films using a simple Tight-Binding model. In addition to the theoretical studies, we performed diffusion studies of copper through PECVD $\rm α$-BN on Si. The results from both the theoretical and experimental investigations highlight the potential of $\rm α$-BN as a highly effective diffusion barrier, suitable for integration in nanoelectronics. This research shows that $\rm α$-BN is a promising candidate for BEOL interconnects but also demonstrates the synergy of advanced computational models and experimental methods in material innovation for semiconductor applications.

cond-mat.mtrl-sci↗

arXiv2025

Reconfigurable, non-volatile control of optical anisotropy in ReS2 via ferroelectric gating

Electrically tunable linear dichroism (LD) with non-volatile properties represents a critical yet elusive feature for next-generation integrated photonic elements in practical device architectures. Here, we demonstrate record-breaking, non-volatile control of optical anisotropy in two-dimensional ReS2 via ferroelectric gating with aluminum scandium nitride (AlScN). Our ferroelectric field-effect transistors achieve near-unity (~95%) LD tunability of differential reflectance at room temperature--the highest reported for any electrically controlled 2D optical system. Crucially, the programmed optical states exhibit exceptional retention exceeding 12,000 seconds without applied bias, enabling true non-volatile optical memory. Through combined experimental characterization and ab initio calculations, we reveal that ferroelectric polarization switching induces substantial asymmetric charge transfer to ReS2, selectively populating conduction band states and triggering structural distortions that dramatically enhance optical anisotropy in the "up" polarization state while leaving the "down" state unperturbed. This ferroelectric-semiconductor coupling provides a universal platform for voltage-programmable, energy-efficient photonic devices with dynamic polarization control, addressing critical needs in integrated photonics as well as programmable far-field optics and telecommunications infrastructure.

physics.optics↗

arXiv2024

Twisted MoSe2 Homobilayer Behaving as a Heterobilayer

Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature.

cond-mat.mes-hall↗

arXiv2024

Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane

Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materials through atomic membranes. We grow vdW topological insulators (TIs) Sb$_2$Te$_3$ and Bi$_2$Se$_3$ by molecular beam epitaxy on both surfaces of atomically thin graphene or hBN, which serve as suspended 2D vdW "$\textit{substrate}$" layers. Both homo- and hetero- double-sided vdW TI tunnel junctions are fabricated, with the atomically thin hBN acting as a crystal-momentum-conserving tunnelling barrier with abrupt and epitaxial interface. By performing field-angle dependent magneto-tunnelling spectroscopy on these devices, we reveal the energy-momentum-spin resonant tunnelling of massless Dirac electrons between helical Landau levels developed in the topological surface states at the interface.

cond-mat.mtrl-sci↗

arXiv2023

Highly tunable room-temperature plexcitons in monolayer WSe2 /gap-plasmon nanocavities

The advancement of quantum photonic technologies relies on the ability to precisely control the degrees of freedom of optically active states. Here, we realize real-time, room-temperature tunable strong plasmon-exciton coupling in 2D semiconductor monolayers enabled by a general approach that combines strain engineering plus force- and voltage-adjustable plasmonic nanocavities. We show that the exciton energy and nanocavity plasmon resonance can be controllably toggled in concert by applying pressure with a plasmonic nanoprobe, allowing in operando control of detuning and coupling strength, with observed Rabi splittings >100 meV. Leveraging correlated force spectroscopy, nano-photoluminescence (nano-PL) and nano-Raman measurements, augmented with electromagnetic simulations, we identify distinct polariton bands and dark polariton states, and map their evolution as a function of nanogap and strain tuning. Uniquely, the system allows for manipulation of coupling strength over a range of cavity parameters without dramatically altering the detuning. Further, we establish that the tunable strong coupling is robust under multiple pressing cycles and repeated experiments over multiple nanobubbles. Finally, we show that the nanogap size can be directly modulated via an applied DC voltage between the substrate and plasmonic tip, highlighting the inherent nature of the concept as a plexcitonic nano-electro-mechanical system (NEMS). Our work demonstrates the potential to precisely control and tailor plexciton states localized in monolayer (1L) transition metal dichalcogenides (TMDs), paving the way for on-chip polariton-based nanophotonic applications spanning quantum information processing to photochemistry.

physics.optics↗

arXiv2023

MoS$_{2}$/Al$_{0.68}$Sc$_{0.32}$N negative capacitance field-effect transistors

Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characteristics of a MoS$_{2}$ negative capacitance FET (NCFET) based on an AlScN ferroelectric material. We experimentally demonstrate the effect of a dielectric layer in the gate stack on the memory window and subthreshold swing (SS) of the NCFET. We show that the hysteresis behavior of transfer characteristics in the NCFET can be minimized with the inclusion of a non-ferroelectric dielectric layer, which fulfills the capacitance-matching condition. Remarkably, we also observe the NC effect in MoS$_{2}$/AlScN NCFETs arrays based on large-area monolayer MoS$_{2}$ synthesized by chemical vapor deposition, showing the SS values smaller than its thermionic limit (~36-60 mV/dec) and minimal variation in threshold voltages (< 20 mV).

cond-mat.mtrl-sci↗

arXiv2023

Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures

Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.

cond-mat.mes-hall↗

arXiv2023

Tailoring Exciton Dynamics in TMDC Heterobilayers in the Quantum Plasmonic Regime

Control of excitons in transition metal dichalcogenides (TMDCs) and their heterostructures is fundamentally interesting for tailoring light-matter interactions and exploring their potential applications in high-efficiency optoelectronic and nonlinear photonic devices. While both intra- and interlayer excitons in TMDCs have been heavily studied, their behavior in the quantum tunneling regime, in which the TMDC or its heterostructure is optically excited and concurrently serves as a tunnel junction barrier, remains unexplored. Here, using the degree of freedom of a metallic probe in an atomic force microscope, we investigated both intralayer and interlayer excitons dynamics in TMDC heterobilayers via locally controlled junction current in a finely tuned sub-nanometer tip-sample cavity. Our tip-enhanced photoluminescence measurements reveal a significantly different exciton-quantum plasmon coupling for intralayer and interlayer excitons due to different orientation of the dipoles of the respective e-h pairs. Using a steady-state rate equation fit, we extracted field gradients, radiative and nonradiative relaxation rates for excitons in the quantum tunneling regime with and without junction current. Our results show that tip-induced radiative (nonradiative) relaxation of intralayer (interlayer) excitons becomes dominant in the quantum tunneling regime due to the Purcell effect. These findings have important implications for near-field probing of excitonic materials in the strong-coupling regime.

cond-mat.mes-hall↗

arXiv2020

Strong Exciton-Photon Coupling in Large Area MoSe$_2$ and WSe$_2$ Heterostructures Fabricated from Two-Dimensional Materials Grown by Chemical Vapor Deposition

Two-dimensional semiconducting transition metal dichalcogenides embedded in optical microcavities in the strong exciton-photon coupling regime may lead to promising applications in spin and valley addressable polaritonic logic gates and circuits. One significant obstacle for their realization is the inherent lack of scalability associated with the mechanical exfoliation commonly used for fabrication of two-dimensional materials and their heterostructures. Chemical vapor deposition offers an alternative scalable fabrication method for both monolayer semiconductors and other two-dimensional materials, such as hexagonal boron nitride. Observation of the strong light-matter coupling in chemical vapor grown transition metal dichalcogenides has been demonstrated so far in a handful of experiments with monolayer molybdenum disulfide and tungsten disulfide. Here we instead demonstrate the strong exciton-photon coupling in microcavities comprising large area transition metal dichalcogenide / hexagonal boron nitride heterostructures made from chemical vapor deposition grown molybdenum diselenide and tungsten diselenide encapsulated on one or both sides in continuous few-layer boron nitride films also grown by chemical vapor deposition. These transition metal dichalcogenide / hexagonal boron nitride heterostructures show high optical quality comparable with mechanically exfoliated samples, allowing operation in the strong coupling regime in a wide range of temperatures down to 4 Kelvin in tunable and monolithic microcavities, and demonstrating the possibility to successfully develop large area transition metal dichalcogenide based polariton devices.

physics.optics↗

arXiv2019

Infrared study of Large scale h-BN film and Graphene/h-BN heterostructure

We synthesize a series of CVD h-BN films and perform critical infrared spectroscopic characterization. For high-temperature (HT, Temp = 1400 degrees) grown h-BN thin film only E1u-mode infrared phonon is activated demonstrating highly aligned 2D h-BN planes over large area, whereas low-temperature (LT, Temp = 1000 degrees) grown film shows two phonon peaks, E1u and A2u, due to stacking of h-BN plane at tilted angle. For CVD graphene transferred on HT h-BN/SiO2/Si substrate, interband transition spectrum s1 shifts strongly to lower energy compared with that on LT h-BN/SiO2/Si and on bare SiO2/Si substrate, revealing that residual carrier density n in graphene is suppressed by use of HT h-BN layer. Also the interband transition width of s1 defined by effective temperature is reduced from 400 K for G/SiO2/Si to 300 K for HT h-BN/SiO2/Si. The behaviors of n and effective temperature show that HT h-BN film can decouple CVD graphene from the impurity and defect of SiO2 leading to large scale free-standing like graphene.

cond-mat.mtrl-sci↗

arXiv2019

Quantum efficiency enhancement of bialkali photocathodes by an atomically thin layer on substrates

We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10 percent, while the long wavelength response at 633 nm (2.0 eV) increases by a relative 36 percent on average and up to 80 percent at localized hot spot regions when photocathodes are deposited onto graphene coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X-ray diffraction (XRD) and X-ray fluorescence (XRF) revealed that thickness, crystal orientation, quality and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates.

physics.app-ph↗

arXiv2019

Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures

Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures.

cond-mat.mes-hall↗