arXiv subjects

Hyeon-Woo Jeong

Publications and source records attributed to Hyeon-Woo Jeong.

26 records · Page 2Linked to original sources

arXiv2023

X-ray Polarization of BL Lacertae in Outburst

We report the first $> 99\%$ confidence detection of X-ray polarization in BL Lacertae. During a recent X-ray/$γ$-ray outburst, a 287 ksec observation (2022 November 27-30) was taken using the Imaging X-ray Polarimetry Explorer ({\it IXPE}), together with contemporaneous multiwavelength observations from the Neil Gehrels {\it Swift} observatory and {\it XMM-Newton} in soft X-rays (0.3--10~keV), {\it NuSTAR} in hard X-rays (3--70~keV), and optical polarization from the Calar Alto, and Perkins Telescope observatories. Our contemporaneous X-ray data suggest that the {\it IXPE} energy band is at the crossover between the low- and high-frequency blazar emission humps. The source displays significant variability during the observation, and we measure polarization in three separate time bins. Contemporaneous X-ray spectra allow us to determine the relative contribution from each emission hump. We find $>99\%$ confidence X-ray polarization $Π_{2-4{\rm keV}} = 21.7^{+5.6}_{-7.9}\%$ and electric vector polarization angle $ψ_{2-4{\rm keV}} = -28.7 \pm 8.7^{\circ}$ in the time bin with highest estimated synchrotron flux contribution. We discuss possible implications of our observations, including previous {\it IXPE} BL Lacertae pointings, tentatively concluding that synchrotron self-Compton emission dominates over hadronic emission processes during the observed epochs.

astro-ph.HE↗

arXiv2023

Double SSA Spectrum and Magnetic Field Strength of the FSRQ 3C 454.3

We present the results of a radio multi-frequency ($\rm 3-340~GHz$) study of the blazar 3C~454.3. After subtracting the quiescent spectrum corresponding to optically thin emission, we found two individual synchrotron self-absorption (SSA) features in the wide-band spectrum. The one SSA had a relatively low turnover frequency ($ν_{\rm m}$) in the range of $\rm 3-37~GHz$ (lower $ν_{\rm m}$ SSA spectrum, LSS), and the other one had a relatively high $ν_{\rm m}$ of $\rm 55-124~GHz$ (higher $ν_{\rm m}$ SSA spectrum, HSS). Using the SSA parameters, we estimated magnetic field strengths at the surface where optical depth $τ=1$. The estimated magnetic field strengths were $\rm >7~mG$ and $\rm >0.2~mG$ for the LSS and HSS, respectively. The LSS emitting region was magnetically dominated before the June 2014 $γ$-ray flare. The quasi-stationary component (C), $\sim 0.6~{\rm mas}$ apart from the 43 GHz radio core, became brighter than the core with decreasing observing frequency, and we found that component C was related to the LSS. A decrease in jet width was found near component C. As a moving component, K14 approached component C, and the flux density of the component was enhanced while the angular size decreased. The high intrinsic brightness temperature in the fluid frame was obtained as $T_{\rm B, int} \approx (7.0\pm1.0) \times 10^{11}~{\rm K}$ from the jet component after the 2015 August $γ$-ray flare, suggesting that component C is a high-energy emitting region. The observed local minimum of jet width and re-brightening behavior suggest a possible recollimation shock in component C.

astro-ph.HE↗

arXiv2022

In-situ scanning tunneling microscopy observation of thickness-dependent air-sensitive layered materials and heterodevices

Quasi-two-dimensional (Quasi-2D) van der Waals (vdW) materials can be mechanically or chemically exfoliated down to monolayer because of their strong intralayer bonding and the weak interlayer vdW interaction. Thanks to this unique property, one can often find exotic thickness-dependent electronic properties from these quasi-2D vdW materials, which can lead to band gap opening, emerging superconductivity, or enhanced charge density waves with decreasing thickness. Surface-sensitive scanning tunneling microscopy (STM) can provide direct observation of structural and electronic characteristics of such layered materials with atomic precision in real space. However, it is very challenging to preserve the intrinsic surfaces of air-sensitive quasi-2D materials between preparation and measurement. In addition, vdW 2D crystals after exfoliation are extremely hard to explore with a typical STM setup due to their small size (< 10 μm). Here, we present a straightforward method compatible with any STM setup having optical access: (1) exfoliating and/or stacking layered materials in a glove box, (2) transferring them to an ultra-high vacuum STM chamber using a suitcase without exposure to air, and (3) navigating surface to locate exfoliated vdW 2D flakes with different thicknesses. We successfully demonstrated that the clean surfaces of the air-sensitive Fe$_3$GeTe$_2$ can be effectively protected from unwanted oxidation during transfer. Furthermore, our method provides a simple but useful way to access a specific tiny stack of layered materials without any ex-situ fabrication processes for STM navigation. Our experimental improvement will open up a new way to investigate air-sensitive layered vdW materials with various thicknesses via surface-sensitive techniques including STM.

cond-mat.mtrl-sci↗

arXiv2021

Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN.

cond-mat.mtrl-sci↗

arXiv2021

Spin-orbit Torque Switching in an All-Van der Waals Heterostructure

Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency ($ξ$) and electrical conductivity ($σ$), and an efficient spin injection across a transparent interface. Herein, we use single crystals of the van der Waals (vdW) topological semimetal WTe$_2$ and vdW ferromagnet Fe$_3$GeTe$_2$ to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of $ξ{\approx}4.6$ and $σ{\approx}2.25{\times}10^5 Ω^{-1} m^{-1}$ for WTe$_2$. Moreover, we obtain the significantly reduced switching current density of $3.90{\times}10^6 A/cm^2$ at 150 K, which is an order of magnitude smaller than those of conventional heavy-metal/ ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.

cond-mat.mes-hall↗

arXiv2019

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence, an epitaxial single-phase nickel oxide thin-film growth can be achieved in a wide range of temperatures from 10 to 750 °C. At the lowest growth temperature, the out-of-plane strain raises to 1.5%, which is five times bigger than that in a NiO film grown at 750 °C. MnO thin films that had long-range ordered were successfully deposited on the MgO substrates after appropriate tuning of deposition parameters. The growth of MnO phase was strongly influenced by substrate temperature and laser fluence. EuO films with satisfactory quality were deposited by PLD after oxygen availability had been minimized. Synthesis of EuO thin films at rather low growth temperature prevented thermally-driven lattice relaxation and allowed growth of strained films. Overall, PLD was a quick and reliable method to grow binary oxides with rocksalt structure in high quality that can satisfy requirements for applications and for basic research.

cond-mat.mtrl-sci↗

arXiv2019

Strain-induced increase of dielectric constant in EuO thin film

Recently, lattice dynamics of the highly strained europium monoxide, as a promising candidate for strong ferroelectric-ferromagnet material, applied in the next-generation storage devices, attracted huge attention in the solid-state electronics. Here, the authors investigate the effect of tensile strain on dielectric properties of pulsed laser deposited EuO thin films from 10 to 200 K. A nearly 3% out-of-plane lattice compression is observed as the film thickness was reduced to 8 nm, which could originate from the lattice mismatch between film and a LaAlO3 substrate. The temperature and frequency dependence of capacitance and loss factor of the films reveals the dominant role of electronic and ionic polarization below 100 K. The interdigitated capacitor fabricated on strained film shows almost 50% increase of capacitance compared to the relaxed one, which corresponds to a considerable increase of dielectric constant induced by in-plane tensile strain. Softening of the in-plane polarized transverse phonon modes of EuO lattice due to tensile strain might have the major contribution to this behaviour according to the Lyddane-Sachs-Teller relation.

cond-mat.mtrl-sci↗

arXiv2019

Dielectric properties of strained NiO thin films

The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant and the more defective films, which were grown at low temperatures show a drastical increase in the dielectric constant up to room temperature. While the atomically-ordered film, which was grown at high temperature doesn't show any considerable change in the dielectric constant in the range from 10 to 300 K. Below 100 K, the effect of strain on the dielectric constant becomes clear. An increase in dielectric permittivity is observed in the strained films while the relaxed film doesn't show any remarkable deviation from its bulk value. The low-temperature dielectric behavior of NiO thin film can be interpreted based on the effect of strain on the lattice dynamics of rocksalt binary oxides.

cond-mat.mtrl-sci↗