arXiv subjects

Hyeonhu Bae

Publications and source records attributed to Hyeonhu Bae.

At least 19 recordsLinked to original sources

arXiv2026

A d-Electron Heavy-Fermion-Like Superconductor with Frustration-Induced Flat Bands

Heavy-fermion superconductors are mostly associated with f-electron materials with Kondo lattices, while known d-electron heavy-fermion-like systems are often linked to orbital-selective local moments, Hund-metal physics, or a charge-density-wave mechanism. Here we report Mo4PtGa17, a noncentrosymmetric itinerant d-electron superconductor with a geometrically frustrated breathing-pyrochlore Mo lattice. Thermodynamic, transport and NMR measurements reveal heavy-fermion-like behavior superconductivity and dominant ferromagnetic spin fluctuations near a ferromagnetic instability. Theoretical calculations identify nearly flat bands, van Hove singularities and Kramers nodal lines near the Fermi energy, derived intrinsically from Mo-4d states and are robust against on-site electronic correlations. These results suggest that the geometrically frustrated lattice in Mo4PtGa17 generates an intriguing electronic structure that enhances the density of states, spin susceptibility and quasiparticle mass. Mo4PtGa17 therefore identifies a unique route to heavy-fermion-like superconductivity in d-electron materials through geometrical frustration, different from the previously reported systems.

cond-mat.str-el↗

arXiv2026

Confined Oxygen-Vacancy Migration Drives Ferroelectric Switching

Conventional ferroelectricity arises from intrinsic lattice distortions, whereas oxygen vacancies are generally regarded as detrimental because their migration induces leakage currents and polarization degradation. However, the recently discovered ultrathin van der Waals ferroelectric Bi2SeO5 exhibits robust out-of-plane polarization switching despite its pristine crystal symmetry forbidding the corresponding displacive ferroelectric instability. Here we show that this apparent contradiction originates from confined oxygen-vacancy migration. We find that oxygen vacancies preferentially form within SeO3 units and undergo reversible low-barrier rearrangements between nearly degenerate configurations. These localized vacancy dynamics generate a large switchable out-of-plane polarization, while long-range vacancy diffusion is suppressed by substantially higher migration barriers. At a representative vacancy concentration of 2.5%, the resulting polarization reaches approximately 16 uC cm^-2, consistent with experiment. Our results identify confined oxygen-vacancy migration as the microscopic origin of ferroelectric switching in Bi2SeO5 and establish defect-enabled ferroelectricity as a general mechanism for layered van der Waals oxides.

cond-mat.mtrl-sci↗

arXiv2026

Imaging Surface Magnetization in Altermagnetic MnTe Films

Altermagnets with pronounced spin-splitting band structure, unconventional magnetic and crystal symmetries, and exotic magneto-transport properties have received immense interest in cutting-edge spintronics, materials science, and condensed matter physics research. Microscopic imaging of spontaneous magnetic domains and phases in altermagnets constitutes an important step for investigating their underlying material properties, mechanisms, and spin behaviors. Taking advantage of scanning-probe quantum microscopy, here we report nanoscale quantum sensing of a prototypical altermagnet candidate $α$-MnTe. We visualize evanescent magnetization and the associated magnetic domains in epitaxial MnTe films, which allows external magnetic fields to control the intrinsic altermagnetic order and configurations. By evaluating a series of MnTe films with different thicknesses down to the atomic scale, we further present evidence for the interfacial origin of the observed weak magnetization and show its correlation with the anomalous Hall effect in MnTe film. Our results advance the current understanding of emergent altermagnetism, providing insights into future material design of altermagnet-integrated spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Competing incommensurability, electronic correlations, and superconductivity in a hybrid transition metal dichalcogenide

The engineering of superlattices in two-dimensional van der Waals materials has enabled the realization of rich phase diagrams hosting topological and strongly correlated phases. While incommensurability is widespread in three-dimensional systems, the role of moiré potentials in bulk materials remains largely unexplored. Here, using scanning tunneling microscopy, we demonstrate that a bulk transition-metal dichalcogenide polytype, 4Hb-TaS$_2$, hosts an emergent incommensurate potential between its alternating 1T and 1H layers. Interplay with a concomitant incommensurate charge-density wave suppresses the long-range order of this potential, leading to intricate coupling with electronic correlations in the doped 1T surface layer. Combining density functional theory with dynamical mean-field theory, we show that the lattice mismatch locally modulates the interlayer distance, thereby tuning both hybridization and charge transfer between the correlated 1T and metallic 1H layers. This redistribution of charge drives the system towards a doped Mott regime, in which the remaining local moments become self-screened, giving rise to a zero-bias resonance. We further find that bulk superconductivity competes with both the underlying landscape and the associated charge transfer. Our results establish incommensurate potentials as a previously overlooked ingredient in hybrid transition-metal dichalcogenides, highlighting their central role in the interplay between electronic correlations, charge-density-wave order, and unconventional superconductivity.

cond-mat.str-el↗

arXiv2025

QMBench: A Research Level Benchmark for Quantum Materials Research

We introduce QMBench, a comprehensive benchmark designed to evaluate the capability of large language model agents in quantum materials research. This specialized benchmark assesses the model's ability to apply condensed matter physics knowledge and computational techniques such as density functional theory to solve research problems in quantum materials science. QMBench encompasses different domains of the quantum material research, including structural properties, electronic properties, thermodynamic and other properties, symmetry principle and computational methodologies. By providing a standardized evaluation framework, QMBench aims to accelerate the development of an AI scientist capable of making creative contributions to quantum materials research. We expect QMBench to be developed and constantly improved by the research community.

cond-mat.mtrl-sci↗

arXiv2025

Large Anomalous and Topological Hall Effect and Nernst Effect in a Dirac Kagome Magnet Fe3Ge

The search for kagome magnets with unconventional magnetic and electronic properties has gained significant attention in recent years. We report the magnetic, electronic, and thermoelectric properties of Fe3Ge single crystals, where the Fe atoms form a slightly distorted kagome lattice. Fe3Ge exhibits a large anomalous Hall effect and anomalous Nernst effect. The anomalous transverse thermoelectric conductivity reaches about 4.6 A m^-1 K^-1, exceeding values reported for conventional ferromagnets and most topological ferromagnets. First-principles calculations indicate that these transport responses are primarily governed by intrinsic mechanisms, highlighting the dominant role of Berry curvature arising from massive Dirac gaps in momentum space. In addition, we observe a topological Hall resistivity of about 0.9 microOhm cm and a topological Nernst coefficient of 1.2 microvolt K^-1, which are attributed to the Berry phase associated with field-induced scalar spin chirality. These findings demonstrate the combined influence of Berry phases in both momentum and real space, establishing Fe3Ge as a promising candidate for room-temperature transverse thermoelectric applications.

cond-mat.mtrl-sci↗

arXiv2025

Charge transfer empties the flat band in 4H$_b$-TaS$_2$ -- except at the surface

The 4H\textsubscript{b} polytype of TaS$_2$ is a natural heterostructure of H and T-type layers. Intriguing recent evidence points towards a possibly chiral superconducting ground state, unlike the superconductivity found in other polytypes where the T layers are absent, requiring understanding of the possible contributions of electrons from the T layers. Here we use micro-focused angle resolved photoemission spectroscopy to reveal that the T termination of the 4H\textsubscript{b} structure is metallic, but a subsurface T layer -- seen below an H termination and thus more representative of the bulk case -- is gapped. The results imply a complete charge transfer of 1 electron per 13 Ta from the T to adjacent H layers in the bulk, but an incomplete charge transfer at the T termination, yielding a metallic Fermi surface with a planar-chiral character. A similar metallic state is found in an anomalous region with likely T-H-H' stacking at the surface. Our results exclude cluster Mott localisation in either the bulk or surface of 4H$_b$-TaS$_2$ and point to a scenario of superconductivity arising from Josephson-like tunneling between the H layers.

cond-mat.supr-con↗

arXiv2025

Chiral charge density wave in 4Hb- and 1T-TaS$_2$: The Role of interlayer coupling

We use micro-angle-resolved photoemission spectroscopy (micro-ARPES) to investigate chiral charge density waves (CDWs) in 4Hb-TaS$_2$ with micron-scale spatial resolution. In the 1T layers of 4Hb-TaS$_2$, we uncover coexisting left- and right-handed CDW domains and resolve four distinct spectral patterns arising from the interplay of chirality and rotational stacking. In contrast, bulk 1T-TaS$_2$ exhibits a uniform chirality. In addition, 4Hb-TaS$_2$ shows negligible out-of-plane dispersion of the 1T-derived bands, in contrast to the pronounced interlayer coupling observed in bulk 1T-TaS$_2$. Density functional theory (DFT) calculations corroborate this picture, revealing that the interlayer interaction of the chiral order in 4Hb-TaS$_2$ is nearly two orders of magnitude weaker than in the 1T polytype. Our findings establish 4Hb-TaS$_2$ as a quasi-two-dimensional platform for exploring tunable chiral CDW phenomena.

cond-mat.str-el↗

arXiv2025

Bi2Te3-Sb2Te3-Bi2Te3 Lateral Heterostructures Grown by Molecular Beam Epitaxy

Lateral in-plane heterostructures enable precise control of electronic properties and quantum effects in 2D materials. However, their periodic synthesis is challenging because it requires precise control to maintain sharp, coherent interfaces and compatible growth conditions across different domains. Herein, we report the successful heteroepitaxial growth of Bi2Te3-Sb2Te3-Bi2Te3 and periodic lateral heterostructures on hexagonal boron nitride (hBN) through in-situ multiple growth steps at different stages using a molecular beam epitaxy (MBE) system. These trilateral heterostructures are fabricated by growing triangular or hexagonal Bi2Te3 islands at the very beginning, with typical sizes of several hundred nanometers, on the single-crystalline hBN, followed by the lateral growth of Sb2Te3 to form bilateral heterostructures, and finally growing Bi2Te3 on the side facets of the bilateral heterostructures. The electron microscopy results confirm the core area as Bi2Te3, the intermediate layer as Sb2Te3, and the outermost region as Bi2Te3. The resulting heterostructures are approximately 4-8 nm thick and several hundred nanometers in lateral dimensions. These heterostructures are found to grow epitaxially on hBN (< +-4 deg misalignment), and the individual layers are strongly epitaxially aligned with each other. The in-plane heterojunctions are analyzed using the aberration-corrected (Cs-corrected) high-angle annular dark-field scanning transmission electron microscopy technique. We have explored and established the plasmonic properties of these fabricated Bi2Te3-Sb2Te3-Bi2Te3 lateral heterostructures. In addition, the electronic states and the topological properties of the few quintuple layers (QLs) (2- to 4-QLs) Bi2Te3-Sb2Te3 lateral periodic heterostructures are investigated by first-principles calculations.

cond-mat.mtrl-sci↗

arXiv2025

Designing Flat Bands, Localized and Itinerant States in TaS2 Trilayer Heterostructures

Stacking and twisting van der Waals materials provide a powerful tool to design quantum matter and engineer electron correlation. For instance, monolayers of 1T- and 1H-TaS2 are Mott insulating and metallic (also superconducting), respectively, and thus, the T/H bilayer systems have been extensively investigated in the context of heavy fermions and unconventional superconductivity, which are expected phases from localized spins (1T) coexisting with itinerant electrons (1H). However, recent studies revealed that significant charge transfer from the 1T to 1H layers removes the 1T Mottness and renders the above scenario elusive. In this work, we propose a T/T/H trilayer heterostructure by combining a T/T bilayer -- which is a band insulator with flat dispersion -- with a 1H layer. After charge redistribution, this trilayer heterostructure shows localized spins in the Mott flat band of the T/T bilayer and weak spin polarization in the metallic H layer. We argue that by varying the stacking configurations of the T/T bilayer in the T/T/H trilayer, a crossover from a doped Mott insulator to a Kondo insulator can be achieved. The T/T/H trilayer provides therefore a rich novel heterostructure platform to study strong correlation phenomena and unconventional superconductivity.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced Magnetization by Defect-Assisted Exciton Recombination in Atomically Thin CrCl$_3$

Two dimensional (2D) semiconductors present unique opportunities to intertwine optical and magnetic functionalities and to tune these performances through defects and dopants. Here, we integrate exciton pumping into a quantum sensing protocol on nitrogen-vacancy centers in diamond to image the optically-induced transient stray fields in few-layer, antiferromagnetic CrCl$_3$. We discover that exciton recombination enhances the in-plane magnetization of the CrCl$_3$ layers, with a predominant effect in the surface monolayers. Concomitantly, time-resolved photoluminescence measurements reveal that nonradiative exciton recombination intensifies in atomically thin CrCl$_3$ with tightly localized, nearly dipole-forbidden excitons and amplified surface-to-volume ratio. Supported by experiments under controlled surface exposure and density functional theory calculations, we interpret the magnetically enhanced state to result from a defect-assisted Auger recombination that optically activates electron transfer between water vapor related surface impurities and the spin-polarized conduction band. Our work validates defect engineering as a route to enhance intrinsic magnetism in single magnetic layers and opens a novel experimental platform for studying optically-induced, transient magnetism in condensed matter systems.

cond-mat.mtrl-sci↗

arXiv2024

Hybrid-order topology in unconventional magnets of Eu-based Zintl compounds with surface-dependent quantum geometry

The exploration of magnetic topological insulators is instrumental in exploring axion electrodynamics and intriguing transport phenomena, such as the quantum anomalous Hall effect. Here, we report that a family of magnetic compounds Eu$_{2n+1}$In$_{2}$(As,Sb)$_{2n+2}$ ($n=0,1,2$) exhibit both gapless Dirac surface states and chiral hinge modes. Such a hybrid-order topology hatches surface-dependent quantum geometry. By mapping the responses into real space, we demonstrate the existence of chiral hinge modes along the $c$ direction, which originate from the half-quantized anomalous Hall effect on two gapped $ac$/$bc$ facets due to Berry curvature, while the unpinned Dirac surface states on the gapless $ab$ facet generate an intrinsic nonlinear anomalous Hall effect due to the quantum metric. When Eu$_{3}$In$_{2}$As$_{4}$ is polarized to the ferromagnetic phase by an external magnetic field, it becomes an ideal Weyl semimetal with a single pair of type-I Weyl points and no extra Fermi pocket. Our work predicts rich topological states sensitive to magnetic structures, quantum geometry-induced transport and topological superconductivity if proximitized with a superconductor.

cond-mat.mtrl-sci↗

arXiv2024

Topotaxial Mutual-Exchange Growth of Magnetic Zintl Eu$_3$In$_2$As$_4$ Nanowires with Axion Insulator Classification

Nanomaterials bring to expression unique electronic properties that promote advanced functionality and technologies. Albeit, nanoscale growth presents paramount challenges for synthesis limiting the diversity in structures and compositions. Here, we demonstrate solid-state topotactic exchange that converts Wurtzite InAs nanowires into Zintl phase Eu$_3$In$_2$As$_4$ nanowires. In situ evaporation of Eu and As over InAs nanowire cores in molecular beam epitaxy results in mutual exchange of Eu from the shell and In from the core. A continuous Eu$_3$In$_2$As$_4$ shell thereby grows that gradually consumes the InAs core and converts it into a single phase Eu$_3$In$_2$As$_4$ nanowire. Topotaxy, which facilitates the mutual exchange, is supported by the substructure of the As matrix which is similar across the Wurtzite InAs and Zintl Eu$_3$In$_2$As$_4$. We provide initial evidence of an antiferromagnetic transition at T$_N$ $\sim$ 6.5 K in the Zintl phase Eu$_3$In$_2$As$_4$ nanowires. Ab initio calculation confirms the antiferromagnetic state and classifies Eu$_3$In$_2$As$_4$ as a $C_2 T$ axion insulator hosting both chiral hinge modes and unpinned Dirac surface states. The topotactic mutual-exchange growth of Zintl Eu$_3$In$_2$As$_4$ nanowires thus enables the exploration of intricate magneto-topological states of nanomaterials. Moreover, it may open the path for topotactic mutual-exchange synthesis of nanowires made of other exotic compounds.

cond-mat.mtrl-sci↗

arXiv2024

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

First-principle calculations were employed to analyze the effects induced by vacancies of molybdenum (Mo) and sulfur (S) on the dielectric properties of few-layered MoS2. We explored the combined effects of vacancies and dipole interactions on the dielectric properties of few-layered MoS2. In the presence of dielectric screening, we investigated uniformly distributed Mo and S vacancies, and then considered the case of concentrated vacancies. Our results show that the dielectric screening remarkably depends on the distribution of vacancies owing to the polarization induced by the vacancies and on the interlayer distances. This conclusion was validated for a wide range of wide-gap semiconductors with different positions and distributions of vacancies, providing an effective and reliable method for calculating and predicting electrostatic screening of dimensionally reduced materials. We further provided a method for engineering the dielectric constant by changing the interlayer distance, tuning the number of vacancies and the distribution of vacancies in few-layered van der Waals materials for their application in nanodevices and supercapacitors.

cond-mat.mtrl-sci↗

arXiv2023

Heterogeneous Ta-dichalcogenide bilayer: heavy fermions or doped Mott physics?

Controlling and understanding electron correlations in quantum matter is one of the most challenging tasks in materials engineering. In the past years a plethora of new puzzling correlated states have been found by carefully stacking and twisting two-dimensional van der Waals materials of different kind. Unique to these stacked structures is the emergence of correlated phases not foreseeable from the single layers alone. In Ta-dichalcogenide heterostructures made of a good metallic 1H- and a Mott-insulating 1T-layer, recent reports have evidenced a cross-breed itinerant and localized nature of the electronic excitations, similar to what is typically found in heavy fermion systems. Here, we put forward a new interpretation based on first-principles calculations which indicates a sizeable charge transfer of electrons (0.4-0.6 e) from 1T to 1H layers at an elevated interlayer distance. We accurately quantify the strength of the interlayer hybridization which allows us to unambiguously determine that the system is much closer to a doped Mott insulator than to a heavy fermion scenario. Ta-based heterolayers provide therefore a new ground for quantum-materials engineering in the regime of heavily doped Mott insulators hybridized with metallic states at a van der Waals distance.

cond-mat.str-el↗

arXiv2023

Molybdenum Carbide MXenes as Efficient Nanosensors Towards Selected Chemical Warfare Agents

There has been budding demand for the fast, reliable, inexpensive, non-invasive, sensitive, and compact sensors with low power consumption in various fields, such as defence, chemical sensing, health care, and safe environment monitoring units. Particularly, an efficient detection of chemical warfare agents (CWAs) is of great importance for the safety and security of the humans. Inspired by this, we explored molybdenum carbide MXenes (Mo2CTx; Tx= O, F, S) as efficient sensors towards selected CWAs, such as arsine (AsH3), mustard gas (C4H8Cl2S), cyanogen chloride (NCCl), and phosgene (COCl2) both in aqueous and non-aqueous mediums. Our van der Waals corrected density functional theory (DFT) calculations reveal that the CWAs bind with Mo2CF2, and Mo2CS2 monolayers under strong chemisorption with binding energies in the range of -2.33 to -4.05 eV, whereas Mo2CO2 results in comparatively weak bindings of -0.29 to -0.58 eV. We further report the variations in the electronic properties, electrostatic potentials and work functions of Mo2CTx upon the adsorption of CWAs, which authenticate an efficient sensing mechanism. Statistical thermodynamic analysis is applied to explore the sensing properties of Mo2CTx at various of temperatures and pressures. We believe that our findings will pave the way to an innovative class of low-cost reusable sensors for the sensitive and selective detection of highly toxic CWAs in air as well as in aqueous media.

physics.comp-ph↗

arXiv2021

Unidirectional Alignment of AgCN Microwires on Distorted Transition Metal Dichalcogenide Crystals

Van der Waals epitaxy on the surface of two-dimensional (2D) layered crystals has gained significant research interest for the assembly of well-ordered nanostructures and fabrication of vertical heterostructures based on 2D crystals. Although van der Waals epitaxial assembly on the hexagonal phase of transition metal dichalcogenides (TMDCs) has been relatively well characterized, a comparable study on the distorted octahedral phase (1T' or Td) of TMDCs is largely lacking. Here we investigate the assembly behavior of one-dimensional (1D) AgCN microwires on various distorted TMDC crystals, namely 1T'-MoTe2, Td-WTe2, and 1T'-ReS2. The unidirectional alignment of AgCN chains is observed on these crystals, reflecting the symmetry of underlying distorted TMDCs. Polarized Raman spectroscopy and transmission electron microscopy directly confirm that AgCN chains display the remarkable alignment behavior along the distorted chain directions of underlying TMDCs. The observed unidirectional assembly behavior can be attributed to the favorable adsorption configurations of 1D chains along the substrate distortion, which is supported by our theoretical calculations and observation of similar assembly behavior from different cyanide chains. The aligned AgCN microwires can be harnessed as facile markers to identify polymorphs and crystal orientations of TMDCs.

cond-mat.mtrl-sci↗

arXiv2016

High-throughput screening of metal-porphyrin-like graphenes for selective capture of carbon dioxide

Nano-materials, such as metal-organic frameworks, have been considered to capture CO$_2$. However, their application has been limited largely because they exhibit poor selectivity for flue gases and low capture capacity under low pressures. We perform a high-throughput screening for selective CO$_2$ capture from flue gases by using first principles thermodynamics. We find that elements with empty d orbitals selectively attract CO$_2$ from gaseous mixtures under low CO$_2$ pressures at 300 K and release it at ~450 K. CO$_2$ binding to elements involves hybridization of the metal d orbitals with the CO$_2$ $π$ orbitals and CO$_2$-transition metal complexes were observed in experiments. This result allows us to perform high-throughput screening to discover novel promising CO$_2$ capture materials with empty d orbitals and predict their capture performance under various conditions. Moreover, these findings provide physical insights into selective CO$_2$ capture and open a new path to explore CO$_2$ capture materials.

cond-mat.mtrl-sci↗