arXiv subjects

Hyochul Kim

Publications and source records attributed to Hyochul Kim.

24 records · Page 2Linked to original sources

arXiv2010

Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation

We report on recent progress towards single photon sources based on quantum dot and quantum post nanostructures which are manipulated using surface acoustic waves. For this concept acoustic charge conveyance in a quantum well is used to spatially separate electron and hole pairs and transport these in the plane of the quantum well. When conveyed to the location of a quantum dot or quantum post these carriers are sequentially captured into the confined levels. Their radiative decays gives rise to the emission of a train of single photons. Three different approaches using (i) strain- induced and (ii) self-assembled quantum dots, and (iii) self-assembled quantum posts are discussed and their application potential is discussed. First devices and initial experiments towards the realization of such an acoustically driven single photon source are presented and remote acoustically triggered injection into few individual emitters is demonstrated.

quant-ph↗

arXiv2010

Enhanced sequential carrier capture into individual quantum dots and quantum posts controlled by surface acoustic waves

Individual self-assembled Quantum Dots and Quantum Posts are studied under the influence of a surface acoustic wave. In optical experiments we observe an acoustically induced switching of the occupancy of the nanostructures along with an overall increase of the emission intensity. For Quantum Posts, switching occurs continuously from predominantely charged excitons (dissimilar number of electrons and holes) to neutral excitons (same number of electrons and holes) and is independent on whether the surface acoustic wave amplitude is increased or decreased. For quantum dots, switching is non-monotonic and shows a pronounced hysteresis on the amplitude sweep direction. Moreover, emission of positively charged and neutral excitons is observed at high surface acoustic wave amplitudes. These findings are explained by carrier trapping and localization in the thin and disordered two-dimensional wetting layer on top of which Quantum Dots nucleate. This limitation can be overcome for Quantum Posts where acoustically induced charge transport is highly efficient in a wide lateral Matrix-Quantum Well.

cond-mat.mes-hall↗

arXiv2010

Linewidth broadening of a quantum dot coupled to an off-resonant cavity

We study the coupling between a photonic crystal cavity and an off-resonant quantum dot under resonant excitation of the cavity or the quantum dot. Linewidths of the quantum dot and the cavity as a function of the excitation laser power are measured. We show that the linewidth of the quantum dot, measured by observing the cavity emission, is significantly broadened compared to the theoretical estimate. This indicates additional incoherent coupling between the quantum dot and the cavity.

quant-ph↗

arXiv2009

Tuning micropillar cavity birefringence by laser induced surface defects

We demonstrate a technique to tune the optical properties of micropillar cavities by creating small defects on the sample surface near the cavity region with an intense focused laser beam. Such defects modify strain in the structure, changing the birefringence in a controllable way. We apply the technique to make the fundamental cavity mode polarization-degenerate and to fine tune the overall mode frequencies, as needed for applications in quantum information science.

physics.optics↗

arXiv2009

Fast Electrical Control of a Quantum Dot Strongly Coupled to a Nano-resonator

The resonance frequency of an InAs quantum dot strongly coupled to a GaAs photonic crystal cavity was electrically controlled via quantum confined Stark effect. Stark shifts up to 0.3meV were achieved using a lateral Schottky electrode that created a local depletion region at the location of the quantum dot. We report switching of a probe laser coherently coupled to the cavity up to speeds as high as 150MHz, limited by the RC constant of the transmission line. The coupling rate and the magnitude of the Stark shift with electric field were investigated while coherently probing the system.

quant-ph↗

arXiv2004

Ultrafast Optical Response of a High-Reflectivity GaAs/AlAs Bragg Mirror

The ultrafast response of a high-reflectivity GaAs/AlAs Bragg mirror to optical pumping is investigated for all-optical switching applications. Both Kerr and free carrier nonlinearities are induced with 100 fs, 780 nm pulses with a fluence of 0.64 kJ/m^2 and 0.8 kJ/m^2. The absolute transmission of the mirror at 931 nm increases by a factor of 27 from 0.0024% to 0.065% on a picosecond timescale. These results demonstrate the potential for a high-reflectivity ultrafast switchable mirror for quantum optics and optical communication applications. A design is proposed for a structure to be pumped below the bandgaps of the semiconductor mirror materials. Theoretical calculations on this structure show switching ratios up to 2200 corresponding to switching from 0.017% to 37.4% transmission.

cond-mat.mtrl-sci↗