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Hyosim Kim

Publications and source records attributed to Hyosim Kim.

3 recordsLinked to original sources

Irradiation-induced amplification of electric fields at oxide interfaces as revealed by correlative DPC-STEM and DFT

Heterointerfaces are ubiquitous in modern devices, found in technologies ranging from microelectronics to structural components for energy applications. Many of these emerging technologies are found in applications such as satellites, batteries, and next generation nuclear reactors, that are subject to harsh environments. In some scenarios, multiple extreme conditions, such as irradiation and corrosion, act on the material simultaneously. Extending the lifetime of these technologies is dependent on a detailed understanding of how their component materials platforms and interfaces respond in extreme environments, where irradiation and corrosion may couple in unique ways, distinct from corrosion under ambient conditions. Oxides, which form readily over metal underlayers, can act as protective coatings; enhancing the robustness of oxide overlayers to protect underlying metal alloys is a potential avenue towards corrosion mitigation. Here we study the impact of irradiation-induced non-equilibrium defects on charge segregation and electric fields at and near multi-phase oxide heterointerfaces. We perform a detailed study of irradiated Fe2O3-Cr2O3 thin film heterostructures using first-principles DFT electronic structure modeling paired with 4D-STEM DPC and EELS techniques to measure nanoscale changes in electric fields. Our results show clear evidence that irradiation drives substantial modulation of interfacial electric fields that can be tailored by controlling the atomistic chemical structure of the oxide interface. We show that irradiation can selectively induce built-in electric fields, thereby altering their direction; this suggests a pathway to engineering protective oxide heterostructure overlayers that can electrically control the spatial distribution of defects, with significant implications for the design of corrosion-resistant materials for extreme environments.

cond-mat.mtrl-sci

Thicker amorphous grain boundary complexions reduce plastic strain localization in nanocrystalline Cu-Zr

Amorphous grain boundary complexions have been shown to increase the plasticity of nanocrystalline alloys as compared to ordered grain boundaries. Here, the effect of an important structural descriptor, amorphous complexion thickness, on the plasticity and failure modes of nanocrystalline Cu-Zr is studied with in-situ compression testing, with over 50 micropillars tested. Two model materials were created that differ only in their complexion thickness, with one having a thicker complexion population than the other. The sample with thinner complexions was more likely to experience non-uniform plastic deformation in the form of localized plastic flow or shear banding. In contrast, the sample with thicker complexions displayed more homogeneous plasticity and higher damage tolerance; thicker amorphous complexions suppress localization by absorbing defects. This work demonstrates that increasing complexion thickness can be beneficial for stable plastic flow in nanocrystalline alloys, by improving resistance to strain localization and premature failure.

cond-mat.mtrl-sci

Critical Disconnect Between Structural and Electronic Recovery in Amorphous GaAs during Recrystallization

Understanding the evolution of structure and functionality through amorphous to crystalline phase transitions is critical for predicting and designing devices for application in extreme conditions. Here, we consider both aspects of recrystallization of irradiated GaAs. We find that structural evolution occurs in two stages, a low temperature regime characterized by slow, epitaxial front propagation and a high-temperature regime above dominated by rapid growth and formation of dense nanotwin networks. We link aspects of this structural evolution to local ordering, or paracrystallinity, within the amorphous phase. Critically, the electronic recovery of the materials is not commensurate with this structural evolution. The electronic properties of the recrystallized material deviate further from the pristine material than do those of the amorphous phase, highlighting the incongruence between structural and electronic recovery and the contrasting impact of loss of long range order versus localized defects on the functionality of semiconducting materials.

cond-mat.mtrl-sci