Hyoung Won Baac | Searcharxiv

arXiv2026

Exoplanet Detection Using Adaptive Quantum-Optimal Measurement

Detecting terrestrial exoplanets in the habitable zones of nearby stars remains a critical challenge. Such planets can be \(10^8\) to \(10^{10}\) times fainter than their host stars and lie at diffraction-limited angular separations, where starlight strongly obscures the companion signal. Here we present an adaptive quantum measurement method for estimating the number, positions, and brightnesses of mutually incoherent point sources in the sub-Rayleigh, ultra-high-contrast regime, operating at contrasts down to \(10^{-8}\) -- five orders of magnitude beyond previous quantum imaging approaches to exoplanet detection. The method adopts a spatial-mode basis that is updated to maximize the quantum Fisher information per detected photon. Estimation is performed by maximum likelihood in log-brightness coordinates, and the source count is determined by Bayesian-information-criterion (BIC) model selection directly from photon-count statistics, without a tunable detection threshold. For point sources within sub-Rayleigh separations and with brightness ratios spanning eight orders of magnitude, the method reconstructs complete scenes with a mean success rate of \(72.5\%\). Furthermore, it is robust to misalignment, maintaining a \(71.3\%\) success rate under offsets of up to six pixels. These results demonstrate that terrestrial exoplanets can be detected below the Rayleigh limit, a regime previously inaccessible to direct imaging.

physics.optics↗

arXiv2025

Hf/Zr Superlattice-Based High-\k{appa} Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS

Advanced logic transistors require gate dielectrics that achieve sub-nanometer equivalent oxide thickness (EOT), suppress leakage, and satisfy three key requirements: (i) compatibility with RMG-like high-temperature processing, (ii) sufficient Vth tunability for multi-Vth design, and (iii) high device reliability. However, meeting all of these requirements simultaneously has been difficult with conventional high-k systems. In this work, we demonstrate that Hf/Zr-based gate stacks quantitatively satisfy these conditions. After a 700 C N2 anneal, the HZH superlattice achieves an EOT of 7.3 A, lower than conventional HfO2-only stacks (8.5 A) while maintaining comparable leakage. Embedding a 3 A Al2O3 dipole within an HfO2/ZrO2/HfO2 superlattice (HZHA) breaks the conventional dipole trade-off, achieving an EOT of 8.4 A, lower than the 9.0 A of a standard HfO2/Al2O3 stack, while providing a flatband voltage shift greater than 200 mV, thereby enabling multi-Vth tuning without compromising scaling. Furthermore, under -2 V negative-bias temperature stress at 125 C for 100 s, HZHA and HA exhibit comparable flatband voltage drifts of 87 mV and 97 mV, respectively, confirming that strong Vth tunability and sub-nanometer EOT can be achieved without compromising stability. In addition to these quantitative advances, this study reveals previously unreported physical insights into dipole behavior and interfacial diffusion in ultrathin Hf/Zr multilayers. These results establish HZHA as an RMG-compatible, Vth-tunable, low-EOT dielectric platform capable of supporting logic scaling beyond the 1 nm frontier.

cond-mat.mes-hall↗