arXiv subjects

Hyungjun Kim

Publications and source records attributed to Hyungjun Kim.

23 records · Page 2Linked to original sources

arXiv2019

Zero-shifting Technique for Deep Neural Network Training on Resistive Cross-point Arrays

A resistive memory device-based computing architecture is one of the promising platforms for energy-efficient Deep Neural Network (DNN) training accelerators. The key technical challenge in realizing such accelerators is to accumulate the gradient information without a bias. Unlike the digital numbers in software which can be assigned and accessed with desired accuracy, numbers stored in resistive memory devices can only be manipulated following the physics of the device, which can significantly limit the training performance. Therefore, additional techniques and algorithm-level remedies are required to achieve the best possible performance in resistive memory device-based accelerators. In this paper, we analyze asymmetric conductance modulation characteristics in RRAM by Soft-bound synapse model and present an in-depth analysis on the relationship between device characteristics and DNN model accuracy using a 3-layer DNN trained on the MNIST dataset. We show that the imbalance between up and down update leads to a poor network performance. We introduce a concept of symmetry point and propose a zero-shifting technique which can compensate imbalance by programming the reference device and changing the zero value point of the weight. By using this zero-shifting method, we show that network performance dramatically improves for imbalanced synapse devices.

cs.ET↗

arXiv2019

Neural Network-Hardware Co-design for Scalable RRAM-based BNN Accelerators

Recently, RRAM-based Binary Neural Network (BNN) hardware has been gaining interests as it requires 1-bit sense-amp only and eliminates the need for high-resolution ADC and DAC. However, RRAM-based BNN hardware still requires high-resolution ADC for partial sum calculation to implement large-scale neural network using multiple memory arrays. We propose a neural network-hardware co-design approach to split input to fit each split network on a RRAM array so that the reconstructed BNNs calculate 1-bit output neuron in each array. As a result, ADC can be completely eliminated from the design even for large-scale neural network. Simulation results show that the proposed network reconstruction and retraining recovers the inference accuracy of the original BNN. The accuracy loss of the proposed scheme in the CIFAR-10 testcase was less than 1.1% compared to the original network. The code for training and running proposed BNN models is available at: https://github.com/YulhwaKim/RRAMScalable_BNN.

cs.NE↗

arXiv2019

BitSplit-Net: Multi-bit Deep Neural Network with Bitwise Activation Function

Significant computational cost and memory requirements for deep neural networks (DNNs) make it difficult to utilize DNNs in resource-constrained environments. Binary neural network (BNN), which uses binary weights and binary activations, has been gaining interests for its hardware-friendly characteristics and minimal resource requirement. However, BNN usually suffers from accuracy degradation. In this paper, we introduce "BitSplit-Net", a neural network which maintains the hardware-friendly characteristics of BNN while improving accuracy by using multi-bit precision. In BitSplit-Net, each bit of multi-bit activations propagates independently throughout the network before being merged at the end of the network. Thus, each bit path of the BitSplit-Net resembles BNN and hardware friendly features of BNN, such as bitwise binary activation function, are preserved in our scheme. We demonstrate that the BitSplit version of LeNet-5, VGG-9, AlexNet, and ResNet-18 can be trained to have similar classification accuracy at a lower computational cost compared to conventional multi-bit networks with low bit precision (<= 4-bit). We further evaluate BitSplit-Net on GPU with custom CUDA kernel, showing that BitSplit-Net can achieve better hardware performance in comparison to conventional multi-bit networks.

cs.NE↗

arXiv2017

Deep Neural Network Optimized to Resistive Memory with Nonlinear Current-Voltage Characteristics

Artificial Neural Network computation relies on intensive vector-matrix multiplications. Recently, the emerging nonvolatile memory (NVM) crossbar array showed a feasibility of implementing such operations with high energy efficiency, thus there are many works on efficiently utilizing emerging NVM crossbar array as analog vector-matrix multiplier. However, its nonlinear I-V characteristics restrain critical design parameters, such as the read voltage and weight range, resulting in substantial accuracy loss. In this paper, instead of optimizing hardware parameters to a given neural network, we propose a methodology of reconstructing a neural network itself optimized to resistive memory crossbar arrays. To verify the validity of the proposed method, we simulated various neural network with MNIST and CIFAR-10 dataset using two different specific Resistive Random Access Memory (RRAM) model. Simulation results show that our proposed neural network produces significantly higher inference accuracies than conventional neural network when the synapse devices have nonlinear I-V characteristics.

cs.ET↗

arXiv2013

Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics

We report ultrafast pump-probe spectroscopy examining exciton dynamics in atomically thin MoS2. Spectrally- and temporally-resolved measurements are performed to investigate the interaction dynamics of two important direct-gap excitons (A and B) and their associated broadening kinetics. The two excitons show strongly correlated inter-excitonic dynamic, in which the transient blue-shifted excitonic absorption originates from the internal A-B excitonic interaction. The observed complex spectral response is determined by the exciton collision-induced linewidth broadening; the broadening of the B exciton linewidth in turn lowers the peak spectral amplitude of the A exciton. Resonant excitation at the B exciton energy reveals that inter-excitonic scattering plays a more important role in determining the broadening kinetics than free-carrier scattering.

cond-mat.mes-hall↗