arXiv subjects

Hyunsue Kim

Publications and source records attributed to Hyunsue Kim.

10 recordsLinked to original sources

arXiv2026

Collective quantum state at the atomic limit

Collective quantum states are often associated with extended systems, where spatially extensive degrees of freedom enable emergent many-body behavior; whether such strongly correlated states survive at atomic dimensions remains a fundamental question. Tomonaga-Luttinger liquids provide a paradigmatic example of one-dimensional collective quantum matter characterized by spin-charge separation. Using low-temperature scanning tunneling microscopy and spectroscopy, we directly visualize quantized collective modes in atomically confined mirror twin boundary segments of monolayer WSe2. Distinct standing-wave branches associated with fractionalized spin and charge excitations persist in segments as short as one nanometer, establishing the atomic-scale confinement limit of Luttinger-liquid behavior. These ultrashort segments form a new class of many-body quantum dots whose discrete spectra arise from confined collective bosonic modes rather than single-particle electron states. When assembled into ordered chains, inter-dot coupling reshapes electron-like fundamental states while collective spin/charge excitations remain largely intact, revealing distinct coupling responses of emergent many-body modes. Our results demonstrate that collective quantum matter can persist and exhibit fundamentally distinct coupling behavior at atomic length scales, establishing a novel platform for engineering strongly correlated quantum phases from atomically confined building blocks.

cond-mat.mes-hall↗

arXiv2025

Robust Super-Moiré in Large Angle Single-Twist Bilayers

Forming long wavelength moiré superlattices (MSL) at small-angle twist van der Waals (vdW) bilayers has been a key approach to creating moiré flat bands. The small-angle twist, however, leads to strong lattice reconstruction, causing domain walls and moiré disorders, which pose considerable challenges in engineering such platforms. At large twist angles, the rigid lattices render a more robust, but shorter wavelength MSL, making it difficult to engineer flat bands. Here, we depict a novel approach to tailoring robust super-moiré (SM) structures that combines the advantages of both small-twist and large-twist transition metal dichalcogenides (TMDs) bilayers using only a single twist angle near a commensurate angle. Structurally, we unveil the spontaneous formation of a periodic arrangement of three inequivalent commensurate moiré (CM) stacking, where the angle deviation from the commensurate angle can tune the periodicity. Electronically, we reveal a large set of van Hove singularities (VHSs) that indicate strong band hybridization, leading to flat bands near the valence band maximum. Our study paves the way for a new platform of robust SM bilayers with structural rigidity and controllable wavelength, extending the investigation of the interplay among band topology, quantum geometry, and moiré superconductivity to the large twist angle regime.

cond-mat.mtrl-sci↗

arXiv2024

An active metasurface enhanced with moiré ferroelectricity

Semiconductor moiré systems, characterized by their periodic spatial light emission, unveil a new paradigm of active metasurfaces. Here, we show that ferroelectric moiré domains formed in a twisted hexagonal boron nitride (t-hBN) substrate can modulate light emission from an adjacent semiconductor MoSe$_2$ monolayer, enhancing its functionality as an active metasurface. The electrostatic potential at the surface of the t-hBN substrate provides a simple way to confine excitons in the MoSe$_2$ monolayer. The excitons confined within the domains and at the domain walls are spectrally separated due to a pronounced Stark shift. Moreover, the patterned light emission can be dynamically controlled by electrically gating the ferroelectric domains, introducing a novel functionality beyond conventional semiconductor moiré systems. Our findings chart an exciting pathway for integrating nanometer-scale moiré ferroelectric domains with various optically active functional layers, paving the way for advanced nanophotonic applications.

cond-mat.mes-hall↗

arXiv2024

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moir\'e Superlattice

We investigate how many-electron excited states emerge in twisted MoSe2 homobilayers when the lattice reconstructions evolve. Notably, we identify a new trion resonance that arises in the transition regime of lattice reconstruction, where gradual changes in atomic alignment between the layers occur. Magnetic field-dependent measurements, supported by first-principles calculations, indicate that the exciton forms at the K valley while the doped hole resides in the Gamma valley. First-principles calculations further indicate that two nearly degenerate exciton resonances can arise, localized at different sites within the moir\'e supercell. We propose that the new trion resonance is a "charge-transfer" trion, in which the electron-hole pair is spatially separated from the doped hole. The emergence of these complex excited states stems from the distinct moir\'e potentials acting on holes and excitons, resulting in their different spatial distribution within the superlattice.

cond-mat.mes-hall↗

arXiv2024

Experimental signature of layer skyrmions and implications for band topology in twisted WSe2 bilayers

Transition metal dichalcogenide (TMD) twisted homobilayers have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discovery of fractional Chern insulator (FCI) states in twisted MoTe2 and Chern insulators (CI) and unconventional superconductivity in twisted WSe2 (tWSe2). In these systems, nontrivial topology in the strongly layer-hybridized regime can arise from a spatial patterning of interlayer tunneling amplitudes and layer-dependent potentials that yields a lattice of layer skyrmions. Here we report on experimental signatures of skyrmion textures in the layer degree of freedom of Rhombohedral-stacked (R-stacked) tWSe2 homobilayers. This observation is based on scanning tunneling spectroscopy that separately resolves the Gamma-valley and K-valley moir\'e electronic states. We show that Gamma-valley states are subjected to a moir\'e potential with an amplitude of ~ 120 meV. At ~150 meV above the Gamma-valley, the K-valley states are subjected to a weaker moir\'e potential of ~30 meV. Most significantly, we reveal opposite layer polarizations of the K-valley at the MX and XM sites within the moir\'e unit cell, confirming the theoretically predicted layer skyrmion texture. The dI/dV mappings allow the parameters that enter the continuum model of moir\'e bands in twisted TMD bilayers to be determined experimentally, further establishing a direct correlation between the shape of the LDOS profile in real space and the topology of topmost moir\'e band.

cond-mat.mes-hall↗

arXiv2023

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of high-quality MnBi2Te4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in-situ characterization techniques, we obtain critical insights into the atomic-level control of MnBi2Te4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses. Overall, these results establish a foundation for understanding the growth dynamics of MnBi2Te4 and pave the way for the future applications of MBE in emerging topological quantum materials.

cond-mat.mtrl-sci↗

arXiv2022

Confined monolayer Ag as a large gap 2D semiconductor and its momentum resolved excited states

2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (> 1 eV) 2D semiconductor, consistent with GW-corrected density functional theory. The measured valence band dispersion matches the DFT-GW quasiparticle band. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m0. Possible mechanisms for this large enhancement in the apparent mass are discussed.

cond-mat.mtrl-sci↗

arXiv2022

Visualizing the interplay of Dirac mass gap and magnetism at nanoscale in intrinsic magnetic topological insulators

In intrinsic magnetic topological insulators, Dirac surface state gaps are prerequisites for quantum anomalous Hall and axion insulating states. Unambiguous experimental identification of these gaps has proved to be a challenge, however. Here we use molecular beam epitaxy to grow intrinsic MnBi2Te4 thin films. Using scanning tunneling microscopy/spectroscopy, we directly visualize the Dirac mass gap and its disappearance below and above the magnetic order temperature. We further reveal the interplay of Dirac mass gaps and local magnetic defects. We find that in high defect regions, the Dirac mass gap collapses. Ab initio and coupled Dirac cone model calculations provide insight into the microscopic origin of the correlation between defect density and spatial gap variations. This work provides unambiguous identification of the Dirac mass gap in MnBi2Te4, and by revealing the microscopic origin of its gap variation, establishes a material design principle for realizing exotic states in intrinsic magnetic topological insulators.

cond-mat.mes-hall↗

arXiv2022

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct growth of a heterostructure of two different materials constrains the available band offsets, and it is still unclear if large built-in potentials are attainable for 2D materials. The electronic properties of atomically thin semiconducting transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and quasiparticle band gap depend strongly on the proximal environment. Recent studies have shown that this effect can be harnessed to engineer the lateral band profile of monolayer TMDs to create a heterojunction. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe2 by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe2 monolayer to create a large built-in potential of 0.83 eV. We spatially resolve the MoSe2 band profile and work function using scanning tunneling spectroscopy to map out the nanoscale depletion region. The Se intercalation also modifies the dielectric environment, influencing the local band gap renormalization and increasing the MoSe2 band gap by ~0.26 eV. This work illustrates that environmental proximity engineering provides a robust method to indirectly manipulate the band profile of 2D materials outside the limits of their intrinsic properties, providing avenues for future device design.

cond-mat.mtrl-sci↗

arXiv2021

Monolayer 1T-NbSe2 as a 2D correlated magnetic insulator

Monolayer group-V transition metal dichalcogenides in their 1T phase have recently emerged as a platform to investigate rich phases of matter, such as spin liquid and ferromagnetism, resulting from strong electron correlations. Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam epitaxy (MBE). This discovery has inspired theoretical investigations predicting collective phenomena such as ferromagnetism in two dimensions. Here, by controlling the MBE growth parameters, we demonstrate the successful growth of single-phase 1T-NbSe2. By combining scanning tunneling microscopy/spectroscopy and ab initio calculations, we show that this system is a charge-transfer insulator, with the upper Hubbard band located above the valence band maximum. Furthermore, by creating a vertical 1T/2H NbSe2 heterostructure, we find evidence of exchange interactions between the localized magnetic moments in 1T phase and the metallic/superconducting phase, as manifested by Kondo resonances and Yu-Shiba-Rusinov bound states.

cond-mat.str-el↗