arXiv subjects

I-Hsuan Kao

Publications and source records attributed to I-Hsuan Kao.

11 recordsLinked to original sources

arXiv2026

Element-Specific Visualization of Layer-Parity and Twist-Dependent Magnetism in CrSBr

Van der Waals (vdW) based antiferromagnets (AFMs) are an ideal platform for probing and understanding thickness- and twist-angle-dependent emergent spin phenomena. However, element-specific nanoscale characterization of the spin structure in atomically thin vdW-based AFMs systems and layer-parity effects remain elusive, making them crucial for both fundamental insight into low-dimensional magnetism and the rational design of spintronic devices based on these materials. Here, we utilize X-ray magnetic circular and linear dichroisms paired with photoemission electron microscopy to resolve the magnetic order in atomically thin CrSBr. Our comprehensive measurements reveal CrSBr magnetic structure at the nanoscale and its dependence on the layer number, surface encapsulation, temperature, and applied field. Moreover, in the orthogonally twisted bilayer configuration, obtained by twisting two CrSBr ferromagnetic monolayers by 90$^\circ$, the magnetic easy axis fundamentally differs from the individual monolayers, unlocking a new pathway for moiré magnetism.

cond-mat.mes-hall↗

arXiv2026

Direct visualization of gate-tunable flat bands in twisted double bilayer graphene

The symmetry-broken correlated states in twisted double bilayer graphene (TDBG) can be tuned via several external knobs, including twist angle, displacement field, and carrier density. However, a direct, momentum-resolved characterization of how these parameters reshape the flat-band structure remains limited. In this study, we employ micro focused angle-resolved photoemission spectroscopy to investigate the flat-band dispersion of TDBG at a twist angle of 1.6, systematically varying the displacement field and carrier density via electrostatic gating. We directly observe multiple flat moir'e minibands near charge neutrality, including a flat remote valence band residing below the low-energy flat-band manifold. Furthermore, the dominant Coulomb repulsive energy over the flat- band bandwidth suggests favorable conditions for the emergence of interaction-driven correlated phenomena in TDBG. These findings establish that the formation and evolution of flat bands in TDBG arises from the interplay between the electron filling and the displacement field.

cond-mat.mes-hall↗

arXiv2026

Enabling Electrical Readout of Néel vector reversal in a van der Waals Antiferromagnet

Owing to its robustness against external perturbations and intrinsically ultrafast dynamics, the Néel vector in antiferromagnets (AFMs) can enable the development of next-generation spintronic and magnonic devices for memory and computing applications. To realize AFM-based magnetic memory devices, one of the key requirements is to demonstrate electrical readout of 180-degree reversal of Néel vector in thin film AFMs, which remains critically missing. In this work, we report experimental demonstration of a novel transport methodology to detect Néel vector reversal in atomically thin films of a van der Waals (vdW) based A-type AFM. For this, we utilize spin-dependent electronic band properties of CrSBr by coupling it to a spin-polarized layer, separated by a tunnel barrier. In this configuration, the spin-dependent tunnelling magnetoresistance (MR) becomes sensitive to the relative orientation between the magnetization of the reference electrode and the interfacial sublattice magnetization of the AFM layer, in turn enabling electrical detection of the Néel vector orientation. Importantly, the observed MR can also reveal 180-degree reversal of Néel vector in even-layers of CrSBr, wherein adjacent sublattice magnetic layers are exactly compensated and the net magnetization vanishes and thus establishes a broadly applicable strategy for electrical detection of Néel vector in vdW-based AFMs.

cond-mat.mes-hall↗

arXiv2026

Ultrafast Light-Induced Magnetoelectric Effect in van der Waals Magnetic Semiconductor Heterostructures

Atomic-scale heterostructures of van der Waals (vdW) magnets and semiconductors provide a unique environment for exploring magnetic dynamics. In contrast to typical photothermal excitation of precessional magnetization dynamics by a pump laser pulse, we find that ultrafast optical excitation of a WS$_2$/CrGeTe$_3$ (CGT) bilayer produces an opposite sign of magnetic torque compared to an isolated CGT film. Experimental observations by time-resolved magneto-optic Kerr effect (TR-MOKE) and theoretical analysis by density functional theory (DFT) and Landau-Lifshitz-Gilbert (LLG) simulations support a mechanism in which charge transfer of photoexcited carriers across the interface alters the perpendicular magnetic anisotropy, which in turn generates a torque on the magnetic layer to trigger precessional magnetization dynamics. These results provide new avenues for ultrafast manipulation of magnetization in vdW heterostructures with type-II band alignments. Lastly, we show that optically-generated spin currents from WS$_2$ into CGT can also trigger precessional dynamics via angular momentum transfer.

cond-mat.mes-hall↗

arXiv2026

Visualization of Tunable Electronic Structure of Monolayer TaIrTe$_4$

Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric screening tunable topological phases such as quantum spin Hall insulator (QSHI), trivial insulator, higher-order topological insulator, and metallic phase, in the ground state of monolayer TaIrTe$_4$. Moreover, charge dosing has been demonstrated to convert the QSHI into a dual QSHI state. Although the band structure of monolayer TaIrTe$_4$ is central to interpreting its topological phases in transport experiments, direct experimental access to its intrinsic electronic structure has so far remained elusive. Here we report direct measurements of the monolayer TaIrTe$_4$ band structure using spatially resolved micro-angle-resolved photoemission spectroscopy (microARPES) with micrometre-scale resolution. The observed dispersions show quantitative agreement with density functional theory calculations using the Heyd-Scuseria-Ernzerhof hybrid functional, establishing the insulating ground state and revealing no evidence for strong electronic correlations. We further uncover a pronounced electron-hole asymmetry in the doping response. Whereas hole doping is readily induced by electrostatic gating, attempts to introduce electrons via gating or alkali metal deposition do not yield a rigid upward shift of the Fermi level. Fractional charge calculations demonstrate that added electrons instead drive band renormalization and shrink the band gap. Taken together, our experimental and theoretical results identify the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, showing that doping can fundamentally alter the electronic structure beyond the rigid band behaviour that is typically assumed.

cond-mat.str-el↗

arXiv2025

Quantum Sensing of Broadband Spin Dynamics and Magnon Transport in Antiferromagnets

Optical detection of magnetic resonance using quantum spin sensors (QSS) provides a spatially local and sensitive technique to probe spin dynamics in magnets. However, its utility as a probe of antiferromagnetic resonance (AFMR) remains an open question. We report the first experimental demonstration of optically detected AFMR in layered van der Waals antiferromagnets (AF) up to frequencies of 24 GHz. We leverage QSS spin relaxation due to low-frequency magnetic field fluctuations arising from collective dynamics of magnons excited by the uniform AFMR mode. First, through AFMR spectroscopy we characterize the intrinsic exchange fields and magnetic anisotropies of the AF. Second, using the localized sensitivity of the QSS we demonstrate magnon transport over tens of micrometers. Finally, we find that optical detection efficiency increases with increasing frequency. This showcases the dual capabilities of QSS as detectors of high frequency magnetization dynamics and magnon transport, paving the way for understanding and controlling the magnetism of antiferromagnets.

cond-mat.mes-hall↗

arXiv2025

Magnetization Dependent In-plane Anomalous Hall Effect in a Low-dimensional System

Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric field, and induced Hall current are mutually orthogonal to each other. Here, we report experimental realization of an unconventional form of AHE in a low-dimensional heterostructure, wherein the Hall response is not only proportional to the out-of-plane magnetization component but also to the in-plane magnetization component. By interfacing a low-symmetry topological semimetal (TaIrTe4) with the ferromagnetic insulator (Cr2Ge2Te6), we create a low-dimensional magnetic system, where only one mirror symmetry is preserved. We show that as long as the magnetization has a finite component in the mirror plane, this last mirror symmetry is broken, allowing the emergence of an AHE signal proportional to in-plane magnetization. Our experiments, conducted on multiple devices, reveal a gate-voltage-dependent AHE response, suggesting that the underlying mechanisms responsible for the Hall effect in our system can be tuned via electrostatic gating. A minimal microscopic model constrained by the symmetry of the heterostructure shows that both interfacial spin-orbit coupling and time-reversal symmetry breaking via the exchange interaction from magnetization are responsible for the emergence of the in-plane AHE. Our work highlights the importance of system symmetries and exchange interaction in low-dimensional heterostructures for designing novel and tunable Hall effects in layered quantum systems.

cond-mat.mes-hall↗

arXiv2024

Unconventional Unidirectional Magnetoresistance in vdW Heterostructures

Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for developing next-generation non volatile and low power consumption data storage technologies.

cond-mat.mes-hall↗

arXiv2024

Revealing the EuCd_{2}As_{2} Semiconducting Band Gap via n-type La-Doping

EuCd_{2}As_{2} has attracted considerable interest as one of the few magnetic Weyl semimetal candidate materials, although recently there have been emerging reports that claim it to have a semiconducting electronic structure. To resolve this debate, we established the growth of n-type EuCd_{2}As_{2} crystals, to directly visualize the nature of the conduction band using angle resolve photoemission spectroscopy (ARPES). We show that La-doping leads to n-type transport signatures in both the thermopower and Hall effect measurements, in crystals with doping levels at 2 - 6 x 10^{17} e^{-} cm^{-3}. Both p-type and n-type doped samples exhibit antiferromagnetic ordering at 9 K. ARPES experiments at 6 K clearly show the presence of the conduction band minimum at 0.8 eV above the valence band maximum, which is further corroborated by the observation of a 0.71 - 0.72 eV band gap in room temperature diffuse reflectance absorbance measurements. Together these findings unambiguously show that EuCd_{2}As_{2} is indeed a semiconductor with a substantial band gap and not a topological semimetal.

cond-mat.mtrl-sci↗

arXiv2020

Field-free deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2

Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy efficient data storage devices. But, field-free deterministic switching of perpendicular magnetization remains a challenge because it requires an out-of-plane anti-damping torque, which is not allowed in conventional spin source materials such as heavy metals (HM) and topological insulators due to the system's symmetry. The exploitation of low-crystal symmetries in emergent quantum materials offers a unique approach to achieve SOTs with unconventional forms. Here, we report the first experimental realization of field-free deterministic magnetic switching of a perpendicularly polarized van der Waals (vdW) magnet employing an out-of-plane anti-damping SOT generated in layered WTe2 which is a low-crystal symmetry quantum material. The numerical simulations confirm that out-of-plane antidamping torque in WTe2 is responsible for the observed magnetization switching in the perpendicular direction.

cond-mat.mes-hall↗

arXiv2017

Possible coexistence of double-Q magnetic order and chequerboard charge order in the re-entrant tetragonal phase of Ba0.76K0.24Fe2As2

We investigate the re-entrant tetragonal phase in the iron-based superconductor Ba0 .76K0.24Fe2As2 by DC magnetization and thermoelectrical measurements. The reversible magnetization confirms by a thermodynamic method that the spin alignment in the re-entrant C4 phase is out-of-plane, in agreement with an itinerant double-Q magnetic order [Allred et al., Nat. Phys. 12, 493 (2016)]. The Nernst coefficient shows the typical unusually large negative value in the stripe-type spin density wave (SDW) state owing to the Fermi surface reconstruction associated with SDW and nematic order. At the transition into the re-entrant C4 tetragonal phase it hardly changes, which could indicate that instead of a complete vanishing of the associated charge order, the spin reorientation could trigger a redistribution of the charges to form a secondary charge order, e.g. in form of a chequerboard-like pattern that no longer breaks the rotational C4 symmetry.

cond-mat.supr-con↗