arXiv subjects

I. D. Avdeev

Publications and source records attributed to I. D. Avdeev.

6 recordsLinked to original sources

arXiv2024

Theory for electron and hole fine structure and Landé g-factors in lead chalcogenide nanowires

Using the atomistic tight-binding method in combination with symmetry analysis and extended effective mass theory we derive a phenomenological model for the fine structure of the ground electron and hole states in $[111]$-grown PbX, X=S,Se hexagonal and cylindrical nanowires. Projection of the tight-binding states to the basis of valley states enables the explicit parametrization of the valley mixing Hamiltonian, which is essential to obtain correct combinations of the valley states for electron (hole) ground levels analytically. The effective Hamiltonian of valley mixing allows to convert the intravalley components of the $g$-factors tensors to the Zeeman splittings of electron and hole levels in nanowires.Tensors of the intravalley electron (hole) Landé $g$-factors, parameters of the valley mixing Hamiltonian as well as the valley and anisotropic splitting energies and velocity matrix elements are also calculated.

cond-mat.mes-hall↗

arXiv2024

Untangling the valley structure of states for intravalley exchange anisotropy in lead chalcogenides quantum dots

We put forward a generalized procedure which allows to restore the bulk-like electron and hole wave functions localized in certain valleys from the wave functions of quantum confined electron/hole states obtained in atomistic calculations of nanostructures. As a demonstration, the procedure is applied to the lead chalcogenide quantum dots to extract the effective intravalley Hamiltonian of the exchange interaction for the ground exciton state PbS and PbSe quantum dots. Renormalization of the anisotropic intravalley matrix elemets of velocity is also calculated. The results demonstrate that the matrix elements of intravalley exchange in PbS quantum dots are much more anisotropic than ones in PbSe.

cond-mat.mes-hall↗

arXiv2022

Effective Landé factors of electrons and holes in lead chalcogenide nanocrystals

The Landé or g-factors of charge carriers in solid state systems provide invaluable information about response of quantum states to external magnetic fields and are key ingredients in description of spin-dependent phenomena in nanostructures. We report on the comprehensive theoretical analysis of electron and hole g-factors in lead chalcogenide nanocrystals. By combining symmetry analysis, atomistic calculations, and extended k.p theory, we relate calculated linear-in-magnetic field energy splittings of confined electron states in nanocrystals to the intravalley g-factors of the multi-valley bulk materials, renormalized due to the quantum confinement. We demonstrate that this renormalization is correctly reproduced by analytical expressions derived in the framework of the extended k.p model.

cond-mat.mes-hall↗

arXiv2019

Optomechanical tension and crumpling of resonant membranes

We predict that illumination by a plane electromagnetic wave of optically resonant membranes, such as graphene or monolayers of transition metal dichalcogenides, directly affects their mechanical tension. The induced optomechanical tension is anisotropic and, depending on the spectral detuning from the resonance, can be both positive and negative. In the latter case, it can overcome the bending rigidity of the membrane leading to transition to the crumpled phase. The instability caused by optomechanical heating of flexural vibrations is also considered.

cond-mat.mes-hall↗

arXiv2018

Hyperfine interaction in atomically thin transition metal dichalcogenides

Localization of charge carriers in monolayers (MLs) of transition metal dichalcogenides (TMDs) dramatically increases spin and valley coherence times, and, by analogy with other systems, the role of the hyperfine interaction should enhance. We perform theoretical analysis of the intervalley hyperfine interaction in TMD MLs based on the group representation theory. We demonstrate, that the spin-valley locking leads to the helical structure of the in-plane hyperfine interaction. In the upper valence band the hyperfine interaction is shown to be of the Ising type, which can be used for fabrication of the atomically thin quantum dots with the long spin and valley coherence times.

cond-mat.mes-hall↗

arXiv2017

Valley and spin splittings in PbSe nanowires

We use an empirical tight-binding approach to calculate electron and hole states in [111]-grown PbSe nanowires. We show that the valley-orbit and spin-orbit splittings are very sensitive to the atomic arrangement within the nanowire elementary cell and differ for [111]-nanowires with microscopic $D_{3d}$, $C_{2h}$ and $D_{3}$ symmetries. For the nanowire diameter below 4 nm the valley-orbit splittings become comparable with the confinement energies and the $\boldsymbol{k}\cdot\boldsymbol{p}$ method is inapplicable. Nanowires with the $D_{3}$ point symmetry having no inversion center exhibit giant spin splitting $E = αk_z$, linear in one-dimensional wave vector $k_z$, with the constant $α$ up to 1 eV$\cdot$Å.

cond-mat.mes-hall↗