arXiv subjects

I. Farrer

Publications and source records attributed to I. Farrer.

At least 91 records · Page 5Linked to original sources

arXiv2012

Enhancement of edge channel transport by a low frequency irradiation

The magnetotransport properties of high mobility two dimensional electron gas have recently attracted a significant interest due to the discovery of microwave induced zero resistance states. Here we show experimentally that microwave irradiation with a photon energy much smaller than the spacing between Landau levels can induce a strong decrease in the four terminal resistance. This effect is not predicted by the bulk transport models introduced to explain zero resistance states, but can be naturally explained by an edge transport model. This highlights the importance of edge channels for zero resistance state physics that was proposed recently.

cond-mat.mes-hall↗

arXiv2012

Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices

Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 x 2e^2/h anomaly. We report on the dependence of the 1D Lande g-factor g* and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g* values up to 2.8 for the lowest 1D subband, significantly exceeding previous in-plane g-factor values in AlGaAs/GaAs QPCs, and approaching that in InGaAs/InP QPCs. We show that g* is highly sensitive to confinement potential, particularly for the lowest 1D subband. This suggests careful management of the QPC's confinement potential may enable the high g* desirable for spintronic applications without resorting to narrow-gap materials such as InAs or InSb. The 0.7 anomaly and zero-bias peak are also highly sensitive to confining potential, explaining the conflicting density dependencies of the 0.7 anomaly in the literature.

cond-mat.mes-hall↗

arXiv2012

Towards a quantum representation of the ampere using single electron pumps

Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge.

cond-mat.mes-hall↗

arXiv2012

Controlled-NOT gate operating with single photons

The initial proposal for scalable optical quantum computing required single photon sources, linear optical elements such as beamsplitters and phaseshifters, and photon detection. Here we demonstrate a two qubit gate using indistinguishable photons from a quantum dot in a pillar microcavity. As the emitter, the optical circuitry, and the detectors are all semiconductor, this is a promising approach towards creating a fully integrated device for scalable quantum computing.

quant-ph↗

arXiv2012

Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices

The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors generate only minor perturbations to the electron trajectories, which are determined by scattering from billiard walls. We use magnetoconductance fluctuations as a probe of the quantum interference and show that these fluctuations change radically when the scattering landscape is modified by thermally-induced charge displacement between donor sites. Our results challenge the accepted understanding of quantum interference effects in nanostructures.

cond-mat.mes-hall↗

arXiv2012

The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots

Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and that by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for `ballistic' transport in quantum dots.

cond-mat.mes-hall↗

arXiv2012

Electric-field-induced coherent coupling of the exciton states in a single quantum dot

The signature of coherent coupling between two quantum states is an anticrossing in their energies as one is swept through the other. In single semiconductor quantum dots containing an electron-hole pair the eigenstates form a two-level system that can be used to demonstrate quantum effects in the solid state, but in all previous work these states were independent. Here we describe a technique to control the energetic splitting of these states using a vertical electric field, facilitating the observation of coherent coupling between them. Near the minimum splitting the eigenstates rotate in the plane of the sample, being orientated at 45° when the splitting is smallest. Using this system we show direct control over the exciton states in one quantum dot, leading to the generation of entangled photon pairs.

cond-mat.mes-hall↗

arXiv2012

Free induction decay of a superposition stored in a quantum dot

We study the free evolution of a superposition initialized with high fidelity in the neutral-exciton state of a quantum dot. Readout of the state at later times is achieved by polarized photon detection, averaged over a large number of cycles. By controlling the fine-structure splitting (FSS) of the dot with a dc electric field, we show a reduction in the degree of polarization of the signal when the splitting is minimized. In analogy with the "free induction decay" observed in nuclear magnetic resonance, we attribute this to hyperfine interactions with nuclei in the semiconductor. We numerically model this effect and find good agreement with experimental studies. Our findings have implications for storage of superpositions in solid-state systems and for entangled photon pair emission protocols that require a small value of the FSS.

cond-mat.mes-hall↗

arXiv2011

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hopping or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities.

cond-mat.mes-hall↗

arXiv2011

Compressibility measurements of quasi-one-dimensional quantum wires

We report measurements of the compressibility of a one-dimensional (1D) quantum wire, defined in the upper well of a GaAs/AlGaAs double quantum well heterostructure. A wire defined simultaneously in the lower well probes the ability of the upper wire to screen the electric field from a biased surface gate. The technique is sensitive enough to resolve spin-splitting of the subbands in the presence of an in-plane magnetic field. We measure a compressibility signal due to the 0.7 structure and study its evolution with increasing temperature and magnetic field. We see no evidence of the formation of the quasibound state predicted by the Kondo model, instead our data are consistent with theories which predict that the 0.7 structure arises as a result of spontaneous spin polarization.

cond-mat.mes-hall↗

arXiv2011

On-demand single-electron transfer between distant quantum dots

Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between neighbouring dots has been demonstrated[3, 4] with great control, and the manipulation of electrons in single and double-dot systems is advancing rapidly.[5-8] For distances greater than a few hundred nanometres neither free propagation nor tunnelling are viable whilst maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second unoccupied dot along a long empty channel. The transfer direction may be reversed and the same electron moved back and forth over sixty times without error, a cumulative distance of 0.25 mm. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information-processing components and devices.

cond-mat.mes-hall↗

arXiv2011

Exciton-spin memory with a semiconductor quantum dot molecule

We report on a single photon and spin storage device based on a semiconductor quantum dot molecule. Optically excited single electron-hole pairs are trapped within the molecule and their recombination rate is electrically controlled over three orders of magnitude. Single photons are stored up to 1 microsecond and read out on a sub-nanosecond timescale. Using resonant excitation, the circular polarisation of individual photons is transferred into the spin state of electron-hole pairs with a fidelity above 80%, which does not degrade for storage times up to the 12.5ns repetition period of the experiment.

quant-ph↗

arXiv2010

All-electrical coherent control of the exciton states in a single quantum dot

We demonstrate high-fidelity reversible transfer of quantum information from the polarisation of photons into the spin-state of an electron-hole pair in a semiconductor quantum dot. Moreover, spins are electrically manipulated on a sub-nanosecond timescale, allowing us to coherently control their evolution. By varying the area of the electrical pulse, we demonstrate phase-shift and spin-flip gate operations with near-unity fidelities. Our system constitutes a controllable quantum interface between flying and stationary qubits, an enabling technology for quantum logic in the solid-state.

quant-ph↗

arXiv2010

Direct observation of non-equilibrium spin population in quasi-one-dimensional nanostructures

Observation of the interplay between interacting energy levels of two spin species is limited by the difficulties in continuously tracking energy levels, and thus leaves spin transport in quantum wires still not well understood. We present a dc conductance feature in the non-equilibrium transport regime, a direct indication that the first one-dimensional subband is filled mostly by one spin species only. How this anomalous spin population changes with magnetic field and source-drain bias is directly measured. We show the source-drain bias changes spin polarisation in semiconductor nanowires, providing a fully electrical method for the creation and manipulation of spin polarization as well as spin-polarized currents.

cond-mat.mes-hall↗

arXiv2010

Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures

We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentration in GaAs and AlGaAs, the interface roughness and the charge in the surface states from the data. This information is very useful from the perspective of molecular beam epitaxy (MBE) growth. It is difficult to fabricate such shallow high-mobility 2DEGs using modulation doping due to the need to have a large enough spacer layer to reduce scattering and switching noise from remote ionsied dopants.

cond-mat.mes-hall↗

arXiv2010

Probing spin-charge separation in a Tomonaga-Luttinger liquid

In a one-dimensional (1D) system of interacting electrons, excitations of spin and charge travel at different speeds, according to the theory of a Tomonaga-Luttinger Liquid (TLL) at low energies. However, the clear observation of this spin-charge separation is an ongoing challenge experimentally. We have fabricated an electrostatically-gated 1D system in which we observe spin-charge separation and also the predicted power-law suppression of tunnelling into the 1D system. The spin-charge separation persists even beyond the low-energy regime where the TLL approximation should hold. TLL effects should therefore also be important in similar, but shorter, electrostatically gated wires, where interaction effects are being studied extensively worldwide.

cond-mat.str-el↗

arXiv2009

Tunable Indistinguishable Photons From Remote Quantum Dots

Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the magnitude of field that can be applied to tens of kVcm^-1, before carriers tunnel out of the dot. The Stark shift experienced by the emission line is typically 1 meV. We report that by embedding the quantum dots in a quantum well heterostructure the vertical field that can be applied is increased by over an order of magnitude whilst preserving the narrow linewidths, high internal quantum efficiencies and familiar emission spectra. Individual dots can then be continuously tuned to the same energy allowing for two-photon interference between remote, independent, quantum dots.

quant-ph↗

arXiv2009

Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer

We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state ($dρ/dT < 0$) emerges at $T\sim1.5{\rm K}$ or lower, when both the layers are simultaneously present. This happens deep in the $"$metallic" regime, even in layers with $k_{F}l>500$, thus making conventional mechanisms of localisation due to disorder improbable. We suggest that this insulating state may be due to a charge density wave phase, as has been expected in electron-hole bilayers from the Singwi-Tosi-Land-Sjölander approximation based calculations of L. Liu {\it et al} [{\em Phys. Rev. B}, {\bf 53}, 7923 (1996)]. Our results are also in qualitative agreement with recent Path-Integral-Monte-Carlo simulations of a two component plasma in the low temperature regime [ P. Ludwig {\it et al}. {\em Contrib. Plasma Physics} {\bf 47}, No. 4-5, 335 (2007)]

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