arXiv subjects

I. Furman

Publications and source records attributed to I. Furman.

5 recordsLinked to original sources

arXiv1999

Molecular Hydrogen Formation on Astrophysically Relevant Surfaces

Recent experimental results about the formation of molecular hydrogen on astrophysically relevant surfaces under conditions close to those encountered in the interstellar medium are analyzed using rate equations. The parameters of the rate equation model are fitted to temperature-programmed desorption curves obtained in the laboratory. These parameters are the activation energy barriers for atomic hydrogen diffusion and desorption, the barrier for molecular hydrogen desorption, and the probability of spontaneous desorption of a hydrogen molecule upon recombination. The model is a generalization of the Polanyi-Wigner equation and provides a description of both first and second order kinetic processes within a single model. Using the values of the parameters that fit best the experimental results, the efficiency of hydrogen recombination on olivine and amorphous carbon surfaces is obtained for a range of hydrogen flux and surface temperature pertinent to a wide range of interstellar conditions.

astro-ph↗

arXiv1999

Models for adatom diffusion on fcc(001) metal surfaces

We present a class of models that describe self diffusion on several fcc(001) metal substrates within a common framework. The models are found to apply well for Cu(001), Ag(001), Au(001), Ni(001) and Pd(001).For each of these metals the models can be used to estimate the activation energy of any diffusion process using a few basic parameters which may be obtained from experiments, ab-initio or semi-empirical calculations. To demonstrate the approach, the parameters of the models are optimized to describe self-diffusion on the (001) surface, by comparing the energy barriers to a full set of barriers obtained from semi-empirical potentials via the embedded atom method (EAM). It is found that these models with at most four parameters,provide a good description of the full landscape of hopping energy barriers on FCC(001) surfaces. The main features of the diffusion processes revealed by EAM calculations are quantitatively reproducible by the models.

cond-mat↗

arXiv1998

H2 Formation on Interstellar Grains in Different Physical Regimes

An analysis of the kinetics of H2 formation on interstellar dust grains is presented using rate equations. It is shown that semi-empirical expressions that appeared in the literature represent two different physical regimes. In particular, it is shown that the expression given by Hollenbach, Werner and Salpeter [ApJ, 163, 165 (1971)] applies when high flux, or high mobility, of H atoms on the surface of a grain, makes it very unlikely that H atoms evaporate before they meet each other and recombine. The expression of Pirronello et al.\ [ApJ, 483, L131 (1997)] -- deduced on the basis of accurate measurements on realistic dust analogue -- applies to the opposite regime (low coverage and low mobility). The implications of this analysis for the understanding of the processes dominating in the Interstellar Medium are discussed.

astro-ph↗

arXiv1998

Models for diffusion and island growth in metal monolayers

A model that describes self diffusion, island nucleation and film growth on FCC(001) metal substrates is presented. The parameters of the model are optimized to describe Cu diffusion on Cu(001), by comparing activation energy barriers to a full set of barriers obtained from semi-empirical potentials via the embedded atom method. It is found that this model (model I), with only three parameters, provides a very good description of the full landscape of hopping energy barriers. These energy barriers are grouped in four main peaks. A reduced model (model II) with only two parameters, is also presented, in which each peak is collapsed into a single energy value. From the results of our simulations, we find that this model still maintains the essential features of diffusion and growth on this model surface. We find that hopping rates along island edges are much higher than for isolated atoms (giving rise to compact island shapes) and that vacancy mobility is higher than adatom mobility. We observe substantial dimer mobility (comparable to the single atom mobility) as well as some mobility of trimers. Mobility of small islands affects the scaling of island density $N$ vs. deposition rate $F$, $N ~ F^γ$, as well as the island size distribution. In the asymptotic limit of slow deposition, scaling arguments and rate equations show that $γ= i*/(2 i* + 1)$ where $i*$ is the size of the largest mobile island. Our Monte Carlo results, obtained for a range of experimentally relevant conditions, show $γ= 0.32$ for the EAM, 0.33 for model I and 0.31 for model II barriers. These results are lower than the anticipated $γ>= 0.4$ due to dimer (and trimer) mobility.

cond-mat.mtrl-sci↗

arXiv1997

Effects of Small Island Mobility on Growth in Molecular Beam Epitaxy

The effects of mobility of small islands on island growth in molecular beam epitaxy are studied. It is shown that small island mobility affects both the scaling and morphology of islands during growth. Three microscopic models are considered, in which the critical island sizes are $i^*=1,2$ and 3 (such that islands of size $s \le i^*$ are mobile while islands of size $s \ge i^{\ast}+1$ are immobile). As i^* increases, islands become more compact, while the exponent $γ$ which relates the island density to deposition rate increases. The morphological changes are quantified by using fractal analysis. It is shown that the fractal dimensions are rather insensitive to changes in i^*. However, the prefactors provide a quantitative measure of the changing morphologies.

cond-mat.mtrl-sci↗