arXiv subjects

I. Galanakis

Publications and source records attributed to I. Galanakis.

At least 19 recordsLinked to original sources

arXiv2025

Itinerant versus localized magnetism in spin gapped metallic half-Heusler compounds: Stoner criterion and magnetic interactions

Spin gapped metals have recently emerged as promising candidates for spintronic and nanoelectronic applications, enabling functionalities such as sub-60mV/dec switching, negative differential resistance, and non-local spin-valve effects in field-effect transistors. Realizing these functionalities, however, requires a deeper understanding of their magnetic behavior, which is governed by a subtle interplay between localized and itinerant magnetism. This interplay is particularly complex in spin gapped metallic half-Heusler compounds, whose magnetic properties remain largely unexplored despite previous studies of their electronic structure. In this work, we systematically investigate the magnetic behavior of spin gapped metallic half-Heusler compounds XYZ (X = Fe, Co, Ni, Rh, Ir, Pd, Pt; Y = Ti, V, Zr, Hf, Nb, Ta; Z = In, Sn, Sb), revealing clear trends. Co- and Ni-based compounds predominantly exhibit itinerant magnetism, whereas Ti-, V-, and Fe-based systems may host localized moments, itinerant moments, or a coexistence of both. To uncover the origin of magnetism, we apply the Stoner model, with the Stoner parameter I estimated from Coulomb interaction parameters (Hubbard U and Hund's exchange J) computed using the constrained random phase approximation (cRPA). Our analysis shows that compounds not satisfying the Stoner criterion tend to remain non-magnetic. On the contrary compounds, which satisfy the Stoner criterion, generally exhibit magnetic ordering highlighting the crucial role of electronic correlations and band structure effects in the emergence of magnetism. For compounds with magnetic ground states, we compute Heisenberg exchange parameters, estimate Curie temperatures (T_C), and analyze spin-wave properties, including magnon dispersions and stiffness constants.

cond-mat.mtrl-sci↗

arXiv2025

Correlation effects in two-dimensional MX_2 and MA_2Z_4 (M= Nb, Ta; X= S, Se, Te; A=Si, Ge; Z=N, P) cold metals: Implications for device applications

Cold metals, characterized by their distinctive band structures, hold promise for innovative electronic devices such as tunnel diodes with negative differential resistance (NDR) effect and field-effect transistors (FETs) with sub-60 mV/dec subthreshold swing (SS). In this study, we employ the GW approximation and HSE06 hybrid functional to investigate the correlation effects on the electronic band structure of two-dimensional (2D) cold metallic materials, specifically focusing on MX_2 and MA_2Z_4 (M=Nb, Ta; X=S, Se, Te; A=Si, Ge; Z= N, P) compounds in 1H structure. These materials exhibit a unique band structure with an isolated metallic band around the Fermi energy, denoted as W_m, as well as two energy gaps: the internal gap E^I_g below the Fermi level and the external gap E^E_g above the Fermi level. These three electronic structure parameters play a decisive role in determining the current-voltage (I-V) characteristics of tunnel diodes, the nature of the NDR effect, and the transfer characteristics and SS value of FETs. Our calculations reveal that both GW and HSE06 methods yield consistent electronic structure properties for all studied compounds. We observed a consistent increase in both internal and external band gaps, as well as metallic bandwidths, across all pn-type cold metal systems. Notably, the internal band gap E^I_g exhibits the most substantial enhancement, highlighting the sensitivity of these materials to correlation effects. In contrast, the changes in the metallic bandwidth W_m and external band gap E^E_g are relatively modest. These findings offer valuable insights for designing and optimizing cold metal-based devices. Materials like NbSi_2N_4, NbGe_2N_4, and TaSi_2N_4 show particular promise for high-performance NDR tunnel diodes and sub-60 mV/dec SS FETs.

cond-mat.mtrl-sci↗

arXiv2024

Spin gapped metals: A novel class of materials for multifunctional spintronic devices

Gapped metals, a recently proposed class of materials, possess a band gap slightly above or below the Fermi level, behaving as intrinsic p- or n-type semiconductors without requiring external doping. Inspired by this concept, we propose a novel material class: "spin gapped metals". These materials exhibit intrinsic p- or n-type character independently for each spin channel, similar to dilute magnetic semiconductors but without the need for transition metal doping. A key advantage of spin gapped metals lies in the absence of band tails that exist within the band gap of conventional p- and n-type semiconductors. Band tails degrade the performance of devices like tunnel field-effect transistors (causing high subthreshold slopes) and negative differential resistance tunnel diodes (resulting in low peak-to-valley current ratios). Here, we demonstrate the viability of spin gapped metals using first-principles electronic band structure calculations on half-Heusler compounds. Our analysis reveals compounds displaying both gapped metal and spin gapped metal behavior, paving the way for next-generation multifunctional devices in spintronics and nanoelectronics.

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arXiv2022

Ab-initio calculation of the Hubbard $U$ and Hund exchange $J$ in local moment magnets: The case of Mn-based full Heusler compounds

Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role in determining the electronic and magnetic properties of these materials. Employing ab-initio calculations in conjunction with the constrained random-phase approximation (cRPA) method, we calculate the strength of the effective on-site Coulomb interaction parameters (Hubbard U and Hund exchange J) in the case of X2MnZ full Heusler compounds with X being one of Ni, Pd or Cu, and Z being one of In, Sn, Sb or Te. We show that the Z element (or sp element) in Heusler compounds significantly reduces the strength of the Hubbard U parameter for Mn 3d electrons compared to the elementary bulk Mn. On the contrary, the effect of the sp-atom on the strength of the U parameter of Ni, Cu or Pd valence d electrons is not so substantial with respect to the elementary bulk values. The U values for all transition metal atoms decrease with increasing sp electron number in the In-Sn-Sb-Te sequence. Our cRPA calculations reveal that despite their well-defined local magnetic moments, the Mn-based full Heusler alloys fall into the category of the weakly correlated materials.

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arXiv2020

Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors

Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with similar lattice constants to make coherent growth of the consecutive spacers of the device possible. Employing state-of-the-art first-principles calculations, we scan the quaternary Heusler compounds and identify suitable candidates for these spintronic devices combining the desirable properties: (i) HMMs with sizable energy gap or SGSs with spin gaps both below and above the Fermi level, (ii) high Curie temperature, (iii) convex hull energy distance less than 0.20 eV, and (iv) negative formation energies. Our results pave the way for the experimental realization of the proposed magnetic tunnel diodes and transistors.

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arXiv2018

Structural, electronic and magnetic properties of the Manganese telluride layers AMnTe2 (A=K, Rb, Cs) from first-principles calculations

Using first-principles electronic structure calculations based on density functional theory (DFT), we investigate the structural, electronic and magnetic properties of the layered ternary manganese tellurides: AMnTe2 (A = K, Rb, and Cs). Calculations are accomplished within the full-potential linearized augmented plane wave (FP-LAPW) using the generalized gradient approximation GGA formalism for the exchange correlation term. We have treated all ferromagnetic, antiferromagnetic and non-magnetic phases and found that the ferromagnetic is the ground-state for all studied compounds. Moreover, all three compounds under study are half-metals with a total spin magnetic per formula unit of 4 mu_B which is mainly localized at the Mn atoms. We express for these compounds a new version of the Slater-Pauling rule and discuss in detail the origin of the minority-spin gap. Finally, we have also calculated some other relevant quantities such as the bulk modulus B, the pressure derivative B', the virtual semiconducting gap Eg, and the half-metallic gap E_HM.

cond-mat.mtrl-sci↗

arXiv2018

Electronic properties of Cs-based halide perovskites: An ab-initio study

Halide perovskites consist a class of materials under intense investigation due to their potential technological applications like solar cells, optoelectronic devices and catalysis. Recently we have studied using electronic band structure calculations from first principles, the cubic MABX$_3$ compounds [A. Koliogiorgos et al., Comput. Mater. Sci. \textbf{138}, 92 (2017)], where MA stands for the methylammonium cation, B is a divalent cation and X a halogen. We expand our study in the case where Cs stands in place of the MA cation. Our results suggest that the Cs-based compounds exhibit also a variety of lattice constants and energy band gaps. The calculated equilibrium lattice constants differ substantially from the experimental ones. The calculated energy gaps also show large deviations for these lattice constants. Moreover, the use of more sophisticated functionals leads to conflicting changes in the energy gap values and its effect is materials dependent. Our results suggest that contrary to the MA halide perovskites, the Cs halide perovskites consist a more delicate case and there is still a long way for \textit{ab-initio} calculations to accurate describe their structural and electronic properties.

cond-mat.mtrl-sci↗

arXiv2017

Electronic and gap properties of Sb and Bi based halide perovskites: An ab-initio study

Halide perovskites are currently under intense investigation due to their potential applications in optoelectronics and solar cells. Among them several crystallize in low symmetry lattice structures like trigonal, hexagonal, orthorhombic and monoclinic. Employing \textit{ab-initio} electronic structure calculations in conjunction with generalized gradient approximation and hybrid functionals we study a series of perovskites with the formula A$_3$B$_2$X$_9$ which have been grown experimentally. A stands for a monovalent cation like Cs, Rb, K or the organic methylammonium molecule (MA), B is Sb or Bi, and X is a halogen. Moreover we include in our study both the effect of spin-orbit coupling in the halide perovskites and the influence of the orientation disorder of the MA cation on the energy band gaps of these compounds. Most compounds under study exhibit absorption in or close to the optical regime and thus can find application in various optoelectronic devices. Our results pave the way for further investigation on the use of these materials in technology relevant applications.

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arXiv2017

A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds

Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic/magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the $GW$ approximation, which allows an elaborate treatment of the electronic correlations, to simulate the electronic band structure of these materials. Our results suggest that in most cases the use of $GW$ self energy instead of the usual density functionals is important to accurately determine the electronic properties of magnetic semiconductors.

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arXiv2017

Electronic and gap properties of lead-free perfect and mixed hybrid halide perovskites: An \textit{ab-initio} study

Hybrid halide perovskites are currently under intense investigation due to their potential applications in optoelectronics and solar cells. Among them, MAPbI$_3$ where MA stands for the methylammonium cation, exhibits ideal properties for solar cells. In attempt to identify new lead-free halide perovskites we have studied using \textit{ab-initio} electronic structure calculations in conjunction with hybrid functionals a series of MABX$_3$ compounds where B is a divalent cation and X a halogen atom. Our results suggest that the compounds under study exhibit a variety of lattice constants and energy band gaps. Especially, MAZnCl$_3$, MACdBr$_3$, MAGeCl$_3$ and MAGeBr$_3$ are susceptible to replace MAPbI$_3$ in devices since they show comparable energy gaps. Further calculations on the mixed hybrid halide perovskites show that we can tune the values of the energy gap although no simplified pattern exists. Our results pave the way for further investigation on the use of these materials in technology relevant applications.

cond-mat.mtrl-sci↗

arXiv2017

Stability of Weyl points in magnetic half-metallic Heusler compounds

We employ {\it ab-initio} fully-relativistic electronic structure calculations to study the stability of the Weyl points in the momentum space within the class of the half-metallic ferromagnetic full Heusler materials, by focusing on Co$_2$TiAl as a well-established prototype compound. Here we show that both the number of the Weyl points together with their $k$-space coordinates can be controlled by the orientation of the magnetization. This alternative degree of freedom, which is absent in other topological materials (e.g. in Weyl semimetals), introduces novel functionalities, specific for the class of half-metallic ferromagnets. Of special interest are Weyl points which are preserved irrespectively of any arbitrary rotation of the magnetization axis.

cond-mat.mtrl-sci↗

arXiv2017

Design of L2_1-type antiferromagnetic semiconducting full-Heusler compounds: A first principles DFT+GW study

Antiferromagnetic spintronics is an on-going growing field of research. Employing both standard density functional theory and the $GW$ approximation within the framework of the FLAPW method, we study the electronic and magnetic properties of seven potential antiferromagnetic semiconducting Heusler compounds with 18 (or 28 when Zn is present) valence electrons per unit cell. We show that in these compounds G-type antiferromagnetism is the ground state and that they are all either emiconductors (Cr$_2$ScP, Cr$_2$TiZn, V$_2$ScP, V$_2$TiSi, and V$_3$Al) or semimetals (Mn$_2$MgZn and Mn$_2$NaAl). The many-body corrections have a minimal effect on the electronic band structure with respect to the standard electronic structure calculations.

cond-mat.mtrl-sci↗

arXiv2016

Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors

Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the quasi-particle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the \textit{sp}-electron based semiconductors such as Si and GaAs, in these systems the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2~eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the \emph{sp}-chemical element.

cond-mat.mtrl-sci↗

arXiv2015

First-principles calculations of exchange interactions, spin waves, and temperature dependence of magnetization in inverse-Heusler-based spin gapless semiconductors

Employing first principles electronic structure calculations in conjunction with the frozen-magnon method we calculate exchange interactions, spin-wave dispersion, and spin-wave stiffness constants in inverse-Heusler-based spin gapless semiconductor (SGS) compounds Mn$_2$CoAl, Ti$_2$MnAl, Cr$_2$ZnSi, Ti$_2$CoSi and Ti$_2$VAs. We find that their magnetic behavior is similar to the half-metallic ferromagnetic full-Heusler alloys, i.e., the intersublattice exchange interactions play an essential role in the formation of the magnetic ground state and in determining the Curie temperature, $T_\mathrm{c}$. All compounds, except Ti$_2$CoSi possess a ferrimagnetic ground state. Due to the finite energy gap in one spin channel, the exchange interactions decay sharply with the distance, and hence magnetism of these SGSs can be described considering only nearest and next-nearest neighbor exchange interactions. The calculated spin-wave dispersion curves are typical for ferrimagnets and ferromagnets. The spin-wave stiffness constants turn out to be larger than those of the elementary 3$d$-ferromagnets. Calculated exchange parameters are used as input to determine the temperature dependence of the magnetization and $T_\mathrm{c}$ of the SGSs. We find that the $T_\mathrm{c}$ of all compounds is much above the room temperature. The calculated magnetization curve for Mn$_2$CoAl as well as the Curie temperature are in very good agreement with available experimental data. The present study is expected to pave the way for a deeper understanding of the magnetic properties of the inverse-Heusler-based SGSs and enhance the interest in these materials for application in spintronic and magnetoelectronic devices.

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arXiv2013

Slater-Pauling behavior in half-metallic magnets

We review the appearance of Slater-Pauling rules in half-metallic magnets. These rules have been derived using ab-initio electronic structure calculations and directly connect the electronic properties (existence of minority-spin energy gap) to the magnetic properties (total spin magnetic moment) in these compounds. Their exact formulation depends on the half-metallic family under study and they can be easily derived if the hybridization of the orbitals at various sites is taken into account.

cond-mat.mtrl-sci↗

arXiv2012

Generalized Slater-Pauling rule for the inverse Heusler compounds

We present extensive first-principles calculations on the inverse full-Heusler compounds having the chemical formula X$_2$YZ where (X = Sc, Ti, V, Cr or Mn), (Z = Al, Si or As) and the Y ranges from Ti to Zn. Several of these alloys are identified to be half-metallic magnets. We show that the appearance of half-metallicity is associated in all cases to a Slater-Pauling behavior of the total spin-magnetic moment. There are three different variants of this rule for the inverse Heusler alloys depending on the chemical type of the constituent transition-metal atoms. Simple arguments regarding the hybridization of the d-orbitals of neighboring atoms can explain these rules. We expect our results to trigger further experimental interest on this type of half-metallic Heusler compounds.

cond-mat.mtrl-sci↗

arXiv2012

Search for spin gapless semiconductors: The case of inverse Heusler compounds

We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.

cond-mat.mtrl-sci↗

arXiv2012

First-principles computed electronic and magnetic properties of zincblende alkaline-earth pnictides

Employing first-principle electronic structure calculations, we study the magnetic and electronic properties of the XY (X= Mg, Ca, Sr and Y= N, P, As, Sb) compounds crystallizing in the zincblende structure. The Ca and Sr alkaline-earth metal monopnictides are found to be half-metallic with a total spin magnetic moment per formula unit of 1.0 $μ_B$. In the case of the Mg alloys the p-d hybridization effect is much weaker and only MgN is a half-metal. Electron counting of the bands explains the Slater-Pauling behavior exhibited by the total spin magnetic moment. We also study for these alloys the effect of deformation taking into account both the cases of hydrostatic pressure and tetragonalization keeping constant either the in-plane lattice parameters or the unit cell volume. Even large degrees of deformation only marginally affect the electronic and magnetic properties of these alloys. Finally, we show that this stands also for the rocksalt structure. Our results suggest that alkaline-earth metal monopnictides are promising materials for magnetoelectronic applications.

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