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I. Matsuda

Publications and source records attributed to I. Matsuda.

At least 19 recordsLinked to original sources

Differentiation of electron doping and oxygen reduction in electron-doped cuprates

Electron-doped cuprates require not only electron doping by chemical substitution but also post-growth reduction annealing for realizing superconductivity. However, electron concentration can also be varied by reduction annealing, making it challenging to disentangle the respective influences of electron concentration and oxygen non-stoichiometry. Here, by combining alkali-metal dosing and angle-resolved photoemission spectroscopy, we monitored changes in the electronic structure of an electron-doped cuprate while supplying additional electrons to its surface without modifying oxygen content. Whereas a Fermi surface reconstruction due to long-range antiferromagnetic order was suppressed by alkali-metal deposition, the pseudogap -- which is associated with short-range spin/charge correlations and can be suppressed by efficient reduction annealing -- was found to persist. The results highlight significant contribution of impurity oxygen atoms to pseudogap formation in electron-doped cuprates.

cond-mat.supr-con

Ambipolar doping-induced surface in-gap state on Mott-insulating Ca$_2$RuO$_4$

We report an x-ray photoemission spectroscopy study of Ca$_2$RuO$_4$ surface-dosed with Cs alkali atoms and C$_{60}$ molecules. Due to its small ionization energy (large electron affinity), deposited Cs atoms (C$_{60}$ molecules) are expected to provide a solid surface with electrons (holes). Upon dosing the dopants to Mott-insulating Ca$_2$RuO$_4$, we found a new Ru $3d$ photoemission peak emerging on the lower binding-energy side, suggesting the creation of a core-hole screening channel associated with coherent Ru $4d$ states around the Fermi level. For both the Cs and C$_{60}$ dosing, this change occurred without an appreciable chemical potential jump. The coherent state, therefore, develops within the Mott gap through hybridization with the impurity level of the dopants. The present work highlights the flexibility of Mott-insulator surfaces as a playground for metal-insulator transitions.

cond-mat.str-el

Enhanced superconducting gap in the outer CuO$_2$ plane of the trilayer cuprate (Hg,Re)Ba$_2$Ca$_2$Cu$_3$O$_{8+\delta}$

We report the first observation of a momentum-resolved superconducting gap in the Hg-based trilayer cuprate, which holds the highest record of superconducting transition temperature ($T_\mathrm{c}$) at ambient pressure. By angle-resolved photoemission spectroscopy utilizing a micro-focused beam, clear quasiparticle dispersions originating from the inner and outer CuO$_2$ planes (IP and OP, respectively) were separately identified. The magnitude of the superconducting gap for the IP was comparable to that of the Bi-based trilayer cuprate with a lower $T_\mathrm{c}$. In contrast, the superconducting gap for the OP was significantly larger than that of the Bi-based one. While strong pairing in the IP has been highlighted as the key element of trilayer cuprates, the present results suggest that the enhanced pairing energy in the OP is essential for the highest $T_\mathrm{c}$ at ambient pressure realized in the Hg-based trilayer cuprate.

cond-mat.supr-con

Inhomogeneous reduction-annealing effects on the electron-doped cuprate superconductor revealed by micro-focused angle-resolved photoemission spectroscopy

The development of the protect-annealing method has extended the superconductivity of the electron-doped cuprate Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_{4}$ (PLCCO) into lower Ce concentrations, while the superconducting volume fraction decreases with underdoping. Employing angle-resolved photoemission spectroscopy with a micro-focused beam, we investigated the electronic structure of protect-annealed PLCCO ($x=0.08$) with small superconducting volume fraction. Significant spatial variation of Fermi surface area and shape was observed, suggesting inhomogeneity in electron concentrations and the pseudogap that competes with superconductivity. By performing measurements at dozens of different sample positions, negative and non-monotonic correlation was found between the electron concentration and pseudogap magnitude. The established correlation illustrates a systematic annealing dependence of the electronic structure where a pseudogap abruptly opens with insufficient oxygen reduction.

cond-mat.supr-con

Orbital-selective metal skin induced by alkali-metal-dosing Mott-insulating Ca$_2$RuO$_4$

Doped Mott insulators are the starting point for interesting physics such as high temperature superconductivity and quantum spin liquids. For multi-band Mott insulators, orbital selective ground states have been envisioned. However, orbital selective metals and Mott insulators have been difficult to realize experimentally. Here we demonstrate by photoemission spectroscopy how Ca$_2$RuO$_4$, upon alkali-metal surface doping, develops a single-band metal skin. Our dynamical mean field theory calculations reveal that homogeneous electron doping of Ca$_2$RuO$_4$ results in a multi-band metal. All together, our results provide compelling evidence for an orbital-selective Mott insulator breakdown, which is unachievable via simple electron doping. Supported by a cluster model and cluster perturbation theory calculations, we demonstrate a novel type of skin metal-insulator transition induced by surface dopants that orbital-selectively hybridize with the bulk Mott state and in turn produce coherent in-gap states.

cond-mat.str-el

Influence of oxygen-coordination number on the electronic structure of single-layer La-based cuprates

We present an angle-resolved photoemission spectroscopy study of the single-layer T*-type structured cuprate SmLa$_{1-x}$Sr$_x$CuO$_4$ with unique five-fold pyramidal oxygen coordination. Upon varying oxygen content, T*-SmLa$_{1-x}$Sr$_x$CuO$_4$ evolved from a Mott-insulating to a metallic state where the Luttinger sum rule breaks down under the assumption of a large hole-like Fermi surface. This is in contrast with the known doping evolution of the structural isomer La$_{2-x}$Sr$_x$CuO$_4$ with six-fold octahedral coordination. In addition, quantitatively characterized Fermi surface suggests that the empirical $T_\mathrm{c}$ rule for octahedral oxygen-coordination systems does not apply to T*-SmLa$_{1-x}$Sr$_x$CuO$_4$. The present results highlight unique properties of the T*-type cuprates possibly rooted in its oxygen coordination, and necessitate thorough investigation with careful evaluation of disorder effects.

cond-mat.str-el

Suppression of atomic displacive excitation in photo-induced A$_{\mathrm{1g}}$ phonon mode of bismuth unveiled by low-temperature time-resolved x-ray diffraction

An ultrafast atomic motion of a photo-induced coherent phonon of bismuth at low temperatures was directly observed with time-resolved x-ray diffraction. A cryostat with a window that is transparent to both optical lasers and x-rays enabled versatile diffraction measurements in a wide temperature range including below 10 K. It is found that an atomic displacement in a fully symmetric A$_{\mathrm{1g}}$ phonon mode is suppressed at low temperatures. This result indicates the displacive excitation process is suppressed in the phonon generation with decreasing temperature.

cond-mat.mtrl-sci

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.

cond-mat.mtrl-sci

Surface-state Coulomb repulsion accelerates a metal-insulator transition in topological semimetal nanofilms

The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we reveal an unexpected mechanism of the transition by high-resolution angle-resolved photoelectron spectroscopy combined with theoretical calculations. Anomalous evolution and degeneracy of quantized energy levels indicate that increased Coulomb repulsion from the surface states deforms a quantum confinement potential with decreasing thickness. The potential deformation drastically modulates spatial distributions of quantized wave functions, which leads to acceleration of the transition even beyond the original QSE picture. This discovery establishes a complete picture of the long-discussed problem in bismuth and highlights the new class of size effects dominating nanoscale transport in systems with metallic surface states.

cond-mat.mtrl-sci

Ultrafast unbalanced electron distributions in quasicrystalline 30° twisted bilayer graphene

Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( Θ = 1.1°)6, 7 and a two-dimensional quasicrystal (Θ = 30°)8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in the quasicrystalline 30° twisted bilayer graphene (QCTBG). We discover that hot carriers are asymmetrically distributed between the two graphene layers, followed by the opposing femtosecond relaxations, by using time- and angle-resolved photoemission spectroscopy. The key mechanism involves the differing carrier transport between layers and the transient doping from the substrate interface. The ultrafast dynamics scheme continues after the Umklapp scattering, which is induced by the incommensurate interlayer stacking of the quasi-crystallinity. The dynamics in the atomic layer opens the possibility of new applications and creates interdisciplinary links in the optoelectronics of van der Waals crystals.

cond-mat.mes-hall

Study of photoinduced valence dynamics in EuNi$_2$(Si$_{0.21}$Ge$_{0.79}$)$_2$ through time-resolved X-ray absorption spectroscopy

The photoinduced valence dynamics of EuNi$_2$(Si$_{0.21}$Ge$_{0.79}$)$_2$ are investigated using time-resolved X-ray absorption spectroscopy for Eu $M_5$-edge. Through the pump-probe technique with synchrotron X-ray and Ti:sapphire laser pulse, a photoinduced valence transition is observed from Eu$^{3+}$ to Eu$^{2+}$. Because the lifetime of a photoinduced state can be up to 3 ns, a metastable state is considered to be realized. By comparing the experimental results with the theoretical calculations, the photoinduced valence transition between Eu 4$f$ and conduction electrons is quantitatively evaluated.

cond-mat.mtrl-sci

Two-dimensional conducting layer on SrTiO$_{3}$ surface induced by hydrogenation

We found that a surface state induced by hydrogenation on the surface of SrTiO$_{3}$(001) (STO) did not obey the rigid band model, which was confirmed by in situ electrical resistivity measurements in ultrahigh vacuum. With exposure of atomic hydrogen on the STO, a new surface state (H-induced donor state, HDS) appears within the bulk band gap (an in-gap state), which donates electrons thermally activated to the bulk conduction band, resulting in downward bending of the bulk bands beneath the surface. The doped electrons flow through the space-charge layer in two-dimensional manner parallel to the surface. The observed semiconducting behavior in the temperature dependence of electronic transport is explained by the thermal activation of carriers. The HDS and the bulk conduction band are non-rigid in energy position; they come closer with increasing the hydrogen adsorption. Eventually the HDS saturates its position around 88 meV below the bottom of the bulk conduction band. The sheet conductivity, accordingly, also saturates at 1.95$\pm$ 0.02 $μ$ S/sq. with increasing hydrogen adsorption, corresponding to completion of the hydrogenation of the surface.

cond-mat.mes-hall

Superstructure-induced splitting of Dirac cones in silicene

Atomic scale engineering of two-dimensional materials could create devices with rich physical and chemical properties. External periodic potentials can enable the manipulation of the electronic band structures of materials. A prototypical system is 3x3-silicene/Ag(111), which has substrate-induced periodic modulations. Recent angle-resolved photoemission spectroscopy measurements revealed six Dirac cone pairs at the Brillouin zone boundary of Ag(111), but their origin remains unclear [Proc. Natl. Acad. Sci. USA 113, 14656 (2016)]. We used linear dichroism angle-resolved photoemission spectroscopy, the tight-binding model, and first-principles calculations to reveal that these Dirac cones mainly derive from the original cones at the K (K') points of free-standing silicene. The Dirac cones of free-standing silicene are split by external periodic potentials that originate from the substrate-overlayer interaction. Our results not only confirm the origin of the Dirac cones in the 3x3-silicene/Ag(111) system, but also provide a powerful route to manipulate the electronic structures of two-dimensional materials.

cond-mat.mtrl-sci

Alkali-metal induced band structure deformation investigated by angle-resolved photoemission spectroscopy and first-principles calculations

Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron doping, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of alkali-metal atoms on the resulting band structures have yet to be fully investigated, owing to difficulties in both experiments and calculations. Here, we combine ARPES measurements on cesium-adsorbed ultrathin bismuth films with first-principles calculations of the electronic charge densities and demonstrate a simple method to evaluate alkali-metal induced band deformation. We reveal that deformation of bismuth surface bands is directly correlated with vertical charge-density profiles at each electronic state of bismuth. In contrast, a change in the quantized bulk bands is well described by a conventional rigid-band-shift picture. We discuss these two aspects of the band deformation holistically, considering spatial distributions of the electronic states and cesium-bismuth hybridization, and provide a prescription for applying alkali-metal adsorption to a wide range of materials.

cond-mat.mtrl-sci

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in Ultrathin Bi2Te3 Films

Circular dichroism (CD) observed by photoemission, being sensitive to the orbital and spin angular momenta of the electronic states, is a powerful probe of the nontrivial surface states of topological insulators, but the experimental results thus far have eluded a comprehensive description. We report a study of Bi2Te3 films with thicknesses ranging from one quintuple layer (two-dimensional limit) to twelve layers (bulk limit) over a wide range of incident photon energy. The data show complex variations in magnitude and sign reversals, which are nevertheless well described by a theoretical calculation including all three photoemission mechanisms: dipole transition, surface photoemission, and spin-orbit coupling. The results establish the nontrivial connection between the spin-orbit texture and CD.

cond-mat.mes-hall

Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement

The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave functions precisely determine the surface and bulk electronic structures, which unambiguously show nontrivial topology. The present results not only prove the fundamental property of Bi but also introduce a capability of the quantum-confinement approach.

cond-mat.mtrl-sci

Phonon-Dressed Two-Dimensional Carriers on the ZnO Surface

Two-dimensional (2D) metallic states formed on the ZnO(10$\bar{1}$0) surface by hydrogen adsorption have been investigated using angle-resolved photoelectron spectroscopy (ARPES). The observed metallic state is characterized by a peak-dip-hump structure at just below the Fermi level and a long tail structure extending up to 600 meV in binding energy. The peak and hump positions are separated by about 70 meV, a value close to the excitation energy of longitudinal optical (LO) phonons. Spectral functions formulated on the basis of the 2D electron-phonon coupling well reproduce the ARPES intensity distribution of the metallic states. This spectral analysis suggests that the 2D electrons accumulated on the ZnO surface couple to the LO phonons and that this coupling is the origin of the anomalous long tail. Our results indicate that the 2D electrons at the ZnO surface are described as the electron liquid model.

cond-mat.str-el

Interface electronic structure at the topological insulator - ferrimagnetic insulator junction

An interface electron state at the junction between a three-dimensional topological insulator (TI) film of Bi2Se3 and a ferrimagnetic insulator film of Y3Fe5O12 (YIG) was investigated by measurements of angle-resolved photoelectron spectroscopy and X-ray absorption magnetic circular dichroism (XMCD). The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3+ state in the YIG film were confirmed. The proximity effect is likely described in terms of the exchange interaction between the localized Fe 3d electrons in the YIG film and delocalized electrons of the surface and bulk states in the Bi2Se3 film. The Curie temperature (TC) may be increased by reducing the amount of the interface Fe2+ ions with opposite spin direction observable as a pre-edge in the XMCD spectra.

cond-mat.mes-hall