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I. Raičević

Publications and source records attributed to I. Raičević.

2 recordsLinked to original sources

Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4}

The in-plane magnetoresistance (MR) of a single crystal La_{1.97}Sr_{0.03}CuO_{4} has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes.

cond-mat.str-el↗

Non-Gaussian Noise in the In-Plane Transport of Lightly Doped La_{2-x}Sr_{x}CuO_4: Evidence for a Collective State of Charge Clusters

A study of the in-plane resistance noise on a high quality single crystal of La_{1.97}Sr_{0.03}CuO_{4} deep inside the spin-glass phase reveals the onset of non-Gaussianity and the insensitivity of the noise to the in-plane magnetic field. The results indicate that the charge dynamics becomes increasingly slow and correlated as temperature T -> 0. The analysis of the higher order noise statistics provides evidence for the existence of a collective ground state of charge clusters, which seem to coexist with charge-poor antiferromagnetic domains that are frozen at such low T.

cond-mat.str-el↗