arXiv subjects

I. Shorubalko

Publications and source records attributed to I. Shorubalko.

21 records · Page 2Linked to original sources

arXiv2005

Experimental investigation of the breakdown of the Onsager-Casimir relations

We use magnetoconductance fluctuation measurements of phase-coherent semiconductor billiards to quantify the contributions to the nonlinear electric conductance that are asymmetric under reversal of magnetic field. We experimentally determine that the average asymmetric contribution is linear in magnetic field (for magnetic flux much larger than one flux quantum) and that its magnitude depends on billiard geometry. In addition, we find an unexpected asymmetry in the power spectrum characteristics of the magnetoconductance with respect to reversal of magnetic field and bias voltage.

cond-mat.mes-hall↗

arXiv2003

Symmetry of two terminal, non-linear electric conduction

The well-established symmetry relations for linear transport phenomena can not, in general, be applied in the non-linear regime. Here we propose a set of symmetry relations with respect to bias voltage and magnetic field for the non-linear conductance of two-terminal electric conductors. We experimentally confirm these relations using phase-coherent, semiconductor quantum dots.

cond-mat.mes-hall↗

arXiv2003

Quantum behavior in nanoscale ballistic rectifiers and artificial materials

Low-temperature experiments are performed on novel nanoscale nonlinear devices (ballistic rectifiers) as well as nano-structured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A DC output is generated between the lower and upper contacts of these devices, when an AC voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the DC output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a new physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures.

cond-mat.mes-hall↗