arXiv subjects

I. V. Ignatiev

Publications and source records attributed to I. V. Ignatiev.

At least 19 recordsLinked to original sources

arXiv2026

Nonparabolic dispersion of charge carriers in CsPbI$_3$ in the orthorhombic phase

The dispersion curves for the electrons and holes in CsPbI$_3$ in the orthorhombic phase are calculated using the density functional theory (DFT), with the spin-orbit coupling taken into account. The effective masses of the charge carriers are obtained using the parabolic approximation of the dispersion curves in different directions in the $k$-space. It is found that the dispersion curves demonstrate strong nonparabolicity at energies above 0.2 eV for electrons and above 0.1 eV for holes, available for experimental study by the means of optical spectroscopy. We propose a model that describes the dispersion dependences of charge carriers at those energies, where the effective masses of the quasiparticles depend quadratically on the wave vector. An expression is obtained according to the model, which can accurately approximate the dispersion curves for the electron and the hole in all symmetric directions from the center to the boundary of the Brillouin zone.

cond-mat.mes-hall↗

arXiv2025

Digital-Alloy Bragg Mirrors in High-Q Microcavities for Polariton Lasing

We present an approach to the molecular-beam epitaxy of high-Q planar GaAs-based microcavities in which the AlGaAs high-index layers of the distributed Bragg reflectors (DBRs) are replaced by short-period GaAs/AlAs superlattices (digital alloys) with similar optical properties. This design enables a significant reduction of interface roughness, precise control of the quarter-wavelength optical thickness and the effective Al content, suppression of the propagation of structural defects, and efficient tuning of intrinsic absorption at the polariton emission wavelength via optimization of the superlattice parameters. Using this approach, we fabricate a microcavity with a low polariton-lasing threshold of approximately 570 W/cm$^2$ and a high experimental quality factor of about 5.4 x $10^4$. This value exceeds by almost a factor of two the theoretical estimate obtained within an equivalent ternary-alloy model. We demonstrate that accurate modeling of the stop-band characteristics and the Q factor requires incorporating the modified electronic density of states in the superlattice, including quantum-confinement and excitonic effects.

cond-mat.mtrl-sci↗

arXiv2024

Effect of electric field on excitons in wide quantum wells

A microscopic model of a heterostructure with a quantum well (QW) is proposed to study the exciton behavior in an external electric field. The effect of an electric field ranging from 0 to 6 kV/cm applied to the GaAs/AlGaAs QW structure in the growth direction is studied for several QWs of various widths up to 100 nm. The three-dimensional Schrödinger equation (SE) of exciton is numerically solved using the finite difference method. Wave functions and energies for several states of the heavy-hole and light-hole excitons are calculated. Dependencies of the exciton state energy, the binding energy, the radiative broadening, and the static dipole moment on the applied electric fields are determined. The threshold of exciton dissociation for the 100-nm QW is also determined. In addition, we found the electric-field-induced shift of the center of mass of the heavy-hole and light-hole exciton in the QWs. Finally, we have modeled reflection spectra of heterostructures with the GaAs/AlGaAs QWs in the electric field using the calculated energies and radiative broadenings of excitons.

cond-mat.mes-hall↗

arXiv2023

Exciton dynamics in CdTe/CdZnTe quantum well

Exciton energy structure and population dynamics in a wide CdTe/CdZnTe quantum well are studied by spectrally-resolved pump-probe spectroscopy. Multiple excitonic resonances in reflectance spectra are observed and identified by solving numerically three-dimensional Schrödinger equation. The pump-probe reflectivity signal is shown to be dominated by the photoinduced nonradiative broadening of the excitonic resonances, while pump-induced exciton energy shift and reduction of the oscillator strength appear to be negligible. This broadening is induced by the reservoir of dark excitons with large in-plane wave vector, which are coupled to the the bright excitons states. The dynamics of the pump-induced nonradiative broadening observed experimentally is characterised by three components: signal build up on the scale of tens of picoseconds (i) and bi-exponential decay on the scale of one nanosecond (ii) and ten nanosecons (iii). Possible mechanisms of the reservoir population and depletion responsible for this behaviour are discussed.

cond-mat.mes-hall↗

arXiv2022

Nonlinear behaviour of the nonradiative exciton reservoir in quantum wells

Excitons and free charge carriers with large wave vectors form a nonradiative reservoir, which can strongly affect properties of bright excitons due to the exciton-exciton and exciton-carrier interactions. In the present work, the dynamics of quasiparticles in the reservoir at different areal densities is experimentally studied in a GaAs/AlGaAs quantum well using a time-resolved reflectance spectroscopy of nonradiative broadening of exciton resonances. The population of the reservoir is controlled either by the excitation power or by the temperature of the structure under study. The dynamics is quantitatively analyzed in the framework of the model developed earlier [Kurdyubov et al., Phys. Rev. B {\bf 104}, 035414 (2021)]. The model considers several dynamic processes, such as scattering of photoexcited excitons into the reservoir, dissociation of excitons into free charge carriers and the reverse process, carrier-induced exciton scattering into the light cone depleting the reservoir, thermally activated nonradiative losses of charge carriers. We have found that competition of these processes leads to highly nonlinear dynamics of reservoir excitons, although their density is far below the exciton Mott transition densities. Characteristic rates of the processes and their dependencies on the excitation power and the temperature are determined.

cond-mat.mes-hall↗

arXiv2021

Exciton-exciton and exciton-charge carrier interaction and the exciton collisional broadening in GaAs/AlGaAs quantum wells

Wave functions of heavy-hole excitons in GaAs/Al$_{0.3}$Ga$_{0.7}$As square quantum wells (QWs) of various widths are calculated by the direct numerical solution of a three-dimensional Schrödinger equation using a finite-difference scheme. These wave functions are then used to determine the exciton-exciton, exciton-electron and exciton-hole fermion exchange constants in a wide range of QW widths (5-150 nm). Additionally, the spin-dependent matrix elements of elastic exciton-exciton, exciton-electron and exciton-hole scattering are calculated. From these matrix elements, the collisional broadening of the exciton resonance is obtained within the Born approximation as a function of the areal density of excitons, electrons and holes respectively for QW widths of 5, 15, 30 and 50 nm. The obtained numerical results are compared with other theoretical works.

cond-mat.mes-hall↗

arXiv2021

Dynamics and control of nonradiative excitons - free carriers mixture in GaAs/AlGaAs quantum wells

Dynamics of nonradiative excitons with large in-plane wave vectors forming a so-called reservoir is experimentally studied in a high-quality semiconductor structure containing a 14-nm shallow GaAs/Al$_{0.03}$Ga$_{0.97}$As quantum well by means of the non-degenerate pump-probe spectroscopy. The exciton dynamics is visualized via the dynamic broadening of the heavy-hole and light-hole exciton resonances caused by the exciton-exciton scattering. Under the non-resonant excitation free carriers are optically generated. In this regime the exciton dynamics is strongly affected by the exciton-carrier scattering. In particular, if the carriers of one sign are prevailing, they efficiently deplete the reservoir of the nonradiative excitons inducing their scattering into the light cone. A simple model of the exciton dynamics is developed, which considers the energy relaxation of photocreated electrons and holes, their coupling into excitons, and exciton scattering into the light cone. The model well reproduces the exciton dynamics observed experimentally both at the resonant and nonresonant excitation. Moreover, it correctly describes the profiles of the photoluminescence pulses studied experimentally. The efficient exciton-electron interaction is further experimentally verified by the control of the exciton density in the reservoir when an additional excitation creates electrons depleting the reservoir.

cond-mat.mes-hall↗

arXiv2020

Exciton-polariton interference controlled by electric field

Linear in the wave-vector terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field controls the magnitude of a linear-in-K term in the exciton Hamiltonian in wide GaAs quantum wells. The dependence of this term on the applied field in a high quality sample was studied by means of the differential reflection spectroscopy. An excellent agreement between the experimental data and the results of calculations using semi-classical non-local dielectric response model confirms the validity of the method and paves the way for the realisation of excitonic Datta-and-Das transistors. In full analogy with the spin-orbit transistor proposed by Datta and Das [Appl. Phys. Lett. {\bf 56}, 665 (1990)], the switch between positive and negative interference of exciton polaritons propagating forward and backward in a GaAs film is achieved by application of an electric field with non-zero component in the plane of the quantum well layer.

cond-mat.mes-hall↗

arXiv2018

Nanosecond-scale magneto-exciton energy oscillations in quantum wells

We report on the experimental evidence for a nanosecond time-scale spin memory based on nonradiative excitons. The effect manifests itself in magnetic-field-induced oscillations of the energy of the optically active (radiative) excitons. The oscillations detected by a spectrally-resolved pump-probe technique applied to a GaAs/AlGaAs quantum well structure in a transverse magnetic field persist over a time scale, which is orders of magnitude longer than the characteristic decoherence time in the system. The effect is attributed to the spin-dependent electron-electron exchange interaction of the optically active and inactive excitons. The spin relaxation time of the electrons belonging to nonradiative excitons appears to be much longer than the hole spin relaxation time.

cond-mat.mes-hall↗

arXiv2017

Impurity-induced modulation of terahertz waves in optically excited GaAs

The effect of the photoinduced absorption of terahertz (THz) radiation in a semi-insulating GaAs crystal is studied by the pulsed THz transmission spectroscopy. We found that a broad-band modulation of THz radiation may be induced by a low-power optical excitation in the spectral range of the impurity absorption band in GaAs. The measured modulation achieves 80\%. The amplitude and frequency characteristics of the resulting THz modulator are critically dependent on the carrier density and relaxation dynamics in the conduction band of GaAs. In semi-insulating GaAs crystals, the carrier density created by the impurity excitation is controlled by the rate of their relaxation to the impurity centers. The relaxation rate and, consequently, the frequency characteristics of the modulator can be optimized by an appropriate choice of the impurities and their concentrations. The modulation parameters can be also controlled by the crystal temperature and by the power and photon energy of the optical excitation. These experiments pave the way to the low-power fast optically-controlled THz modulation, imaging, and beam steering.

physics.app-ph↗

arXiv2017

Spin dynamics of quadrupole nuclei in InGaAs quantum dots

Photoluminescence polarization is experimentally studied for samples with (In,Ga)As/GaAs selfassembled quantum dots in transverse magnetic field (Hanle effect) under slow modulation of the excitation light polarization from fractions of Hz to tens of kHz. The polarization reflects the evolution of strongly coupled electron-nuclear spin system in the quantum dots. Strong modification of the Hanle curves under variation of the modulation period is attributed to the peculiarities of the spin dynamics of quadrupole nuclei, which states are split due to deformation of the crystal lattice in the quantum dots. Analysis of the Hanle curves is fulfilled in the framework of a phenomenological model considering a separate dynamics of a nuclear field BNd determined by the +/- 12 nuclear spin states and of a nuclear field BNq determined by the split-off states +/- 3/2, +/- 5/2, etc. It is found that the characteristic relaxation time for the nuclear field BNd is of order of 0.5 s, while the relaxation of the field BNq is faster by three orders of magnitude.

cond-mat.mes-hall↗

arXiv2016

Inversion of Zeeman splitting of exciton states in InGaAs quantum wells

Zeeman splitting of quantum-confined states of excitons in InGaAs quantum wells (QWs) is experimentally found to depend strongly on quantization energy. Moreover, it changes sign when the quantization energy increases with a decrease in the QW width. In the 87-nm QW, the sign change is observed for the excited quantum-confined states, which are above the ground state only by a few meV. A two-step approach for the numerical solution of the two-particle Schroedinger equation, taking into account the Coulomb interaction and valence-band coupling, is used for a theoretical justification of the observed phenomenon. The calculated variation of the g-factor convincingly follows the dependencies obtained in the experiments.

cond-mat.mes-hall↗

arXiv2016

Excitons in asymmetric quantum wells

Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures with nominally square QWs as well as with triangle-like QWs. Several quantum confined exciton states are experimentally observed as narrow exciton resonances with various profiles. A standard approach for the phenomenological analysis of the profiles is generalized by introducing of different phase shifts for the light waves reflected from the QWs at different exciton resonances. Perfect agreement of the phenomenological fit to the experimentally observed exciton spectra for high-quality structures allowed us to obtain reliable parameters of the exciton resonances including the exciton transition energies, the radiative broadenings, and the phase shifts. A direct numerical solution of Schrödinger equation for the heavy-hole excitons in asymmetric QWs is used for microscopic modeling of the exciton resonances. Remarkable agreement with the experiment is achieved when the effect of indium segregation during the heterostructure growth is taken into account. The segregation results in a modification of the potential profile, in particular, in an asymmetry of the nominally square QWs.

cond-mat.mes-hall↗

arXiv2015

Dynamics of the Energy Relaxation in a Parabolic Quantum Well Laser

We explore two parabolic quantum well (PQW) samples, with and without Bragg mirrors, in order to optimise the building blocks of a Bosonic Cascade Laser. The photoluminescence spectra of a PQW microcavity sample is compared against that of a conventional microcavity with embedded quantum wells (QWs) to demonstrate that the weak coupling lasing in a PQW sample can be achieved. The relaxation dynamics in a conventional QW microcavity and in the PQW microcavity was studied by a non-resonant pump-pump excitation method. Strong difference in the relaxation characteristics between the two samples was found. The semi-classical Boltzmann equations were adapted to reproduce the evolution of excitonic populations within the PQW as a function of the pump power and the output intensity evolution as a function of the pump-pump pulse delay. Fitting the PQW data confirms the anticipated cascade relaxation, paving the way for such a system to produce terahertz radiation.

cond-mat.mes-hall↗

arXiv2015

Excitons in square quantum wells: microscopic modeling and experiment

The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the lowest exciton state are obtained by the Hamiltonian discretization using the high-order finite-difference scheme. The microscopic calculations are compared with the results obtained by the standard variational approach. The exciton binding energies found by two methods coincide within 0.1 meV for the wide range of QW widths. The radiative decay rate is calculated for QWs of various widths using the exciton wave functions obtained by direct and variational methods. The radiative decay rates are confronted with the experimental data measured for high-quality GaAs/AlGaAs and InGaAs/GaAs QW heterostructures grown by molecular beam epitaxy. The calculated and measured values are in good agreement, though slight differences with earlier calculations of the radiative decay rate are observed.

cond-mat.mes-hall↗

arXiv2015

Multiple quantum beats of quantum confined exciton states in InGaAs/GaAs quantum well

Multiple quantum beats of a system of the coherently excited quantum confined exciton states in a high-quality heterostructure with a wide InGaAs/GaAs quantum well are experimentally detected by the spectrally resolved pump-probe method for the first time. The beat signal is observed as at positive as at negative delays between the pump and probe pulses. A theoretical model is developed, which allows one to attribute the QBs at negative delay to the four-wave mixing (FWM) signal detected at the non-standard direction. The beat signal is strongly enhanced by the interference of the FWM wave with the polarization created by the probe pulse. At positive delay, the QBs are due to the mutual interference of the quantum confined exciton states. Several QB frequencies are observed in the experiments, which coincide with the interlevel spacings in the exciton system. The decay time for QBs is of order of several picoseconds at both the positive and negative delays. They are close to the relaxation time of exciton population that allows one to consider the exciton depopulation as the main mechanism of the coherence relaxation in the system under study.

cond-mat.mes-hall↗

arXiv2015

Decrease of heavy-hole exciton mass induced by uniaxial stress in GaAs/AlGaAs quantum well

It is experimentally shown that the pressure applied along the twofold symmetry axis of a heterostructure with a wide GaAs/AlGaAs quantum well leads to considerable modification of the polariton reflectance spectra. This effect is treated as the stress-induced decrease of the heavy-hole exciton mass. Theoretical modeling of the effect supports this assumption. The 5\%-decrease of the exciton mass is obtained at pressure P=0.23 GPa.

cond-mat.mes-hall↗

arXiv2015

Nontrivial relaxation dynamics of excitons in high-quality InGaAs/GaAs quantum wells

Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a function of temperature, while the linewidths demonstrate a complex and peculiar behavior. At low pumping the widths of all peaks remain quite narrow ($< 0.1$ meV) in the whole temperature range studied, $4 - 30K$. At the stronger pumping, the linewidth first increases and than drops down with the temperature rise. Pump-probe experiments show two characteristic time scales in the exciton decay, $< 10$ps and $15 - 45ns$, respectively. We interpret all these data by an interplay between the exciton recombination within the light cone, the exciton relaxation from a non-radiative reservoir to the light cone, and the thermal dissociation of the non-radiative excitons. The broadening of the low energy exciton lines is governed by the radiative recombination and scattering with reservoir excitons while for the higher energy states the linewidths are also dependent on the acoustic phonon relaxation processes.

cond-mat.mes-hall↗