arXiv subjects

I. V. Ponomarev

Publications and source records attributed to I. V. Ponomarev.

At least 19 recordsLinked to original sources

arXiv2007

Photoluminescence Spectroscopy of the Molecular Biexciton in Vertically Stacked Quantum Dot Pairs

We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectra are described well within a few-level, few-particle molecular model. Their properties can be modified broadly by an electric field and by structural design, which makes them highly attractive for controlling nonlinear optical properties.

cond-mat.other↗

arXiv2007

Spin Fine Structure in Optically Excited Quantum Dot Molecules

The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin exchange interactions, Pauli exclusion and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals, but spins.

cond-mat.other↗

arXiv2007

Chaos Beyond Linearized Stability Analysis: Folding of the Phase Space and Distribution of Lyapunov Exponents

We consider a mechanism for area preserving Hamiltonian systems which leads to the enhanced probability, $P(λ, t)$, to find small values of the finite time Lyapunov exponent, $λ$. In our investigation of chaotic dynamical systems we go beyond the linearized stability analysis of nearby divergent trajectories and consider folding of the phase space in the course of chaotic evolution. We show that the spectrum of the Lyapunov exponents $F(λ)= \lim_{t\to\infty} t^{-1}\ln P(λ, t)$ at the origin has a finite value $F(0)=-\tildeλ$ and a slope $F'(0)\le 1$. This means that all negative moments of the distribution $ $ are saturated by rare events with $λ\to 0$. Extensive numerical simulations confirm our findings.

nlin.CD↗

arXiv2006

Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules

Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. We present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures.

cond-mat.mtrl-sci↗

arXiv2006

Electrically tunable g-factors in quantum dot molecular spin states

We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals.

cond-mat.mtrl-sci↗

arXiv2005

Electric field induced narrowing of exciton line width

Considering effects of electric field on the low temperature absorption line of quantum well excitons, we show that, for moderate strength of the electric field, the main contribution to the field dependence of the line-width results from field induced modifications of inhomogeneous broadening of excitons. We find that the strength of the random potential acting on quantum well excitons due to alloy disorder and interface roughness can either decrease or increase with field depending upon the thickness of the well. This means that under certain conditions one can observe counterintuitive narrowing of exciton spectral lines in electric field.

cond-mat.dis-nn↗

arXiv2004

Effect of inter-wall surface roughness correlations on optical spectra of quantum well excitons

We show that the correlation between morphological fluctuations of two interfaces confining a quantum well strongly suppresses a contribution of interface disorder to inhomogeneous line width of excitons. We also demonstrate that only taking into account these correlations one can explain all the variety of experimental data on the dependence of the line width upon thickness of the quantum well.

cond-mat.mes-hall↗

arXiv2003

Self-consistent approach for excitons in quantum wells

We introduce a computationally efficient approach to calculating the characteristics of excitons in quantum wells. In this approach we derive a system of self-consistent equations describing the motion of an electron-hole pair. The motion in the growth direction of the quantum well in this approach is separated from the in-plane motion, but each of them occurs in modified potentials found self-consistently. The approach is applied to shallow quantum wells, for which we obtained an analytical expression for the exciton binding energy and the ground state eigenfunction. Our results are in excellent agreement with standard variational calculations, but require greatly reduced computational effort.

cond-mat.str-el↗

arXiv2003

Self-consistent approach for the quantum confined Stark effect in shallow quantum wells

A computationally efficient, self-consistent complex scaling approach to calculating characteristics of excitons in an external electric field in quantum wells is introduced. The method allows one to extract the resonance position as well as the field-induced broadening for the exciton resonance. For the case of strong confinement the trial function is represented in factorized form. The corresponding coupled self-consistent equations, which include the effective complex potentials, are obtained. The method is applied to the shallow quantum well. It is shown that in this case the real part of the effective exciton potential is insensitive to changes of external electric field up to the ionization threshold, while the imaginary part has non-analytical field dependence and small for moderate electric fields. This allows one to express the exciton quasi-energy at some field through the renormalized expression for the zero-field bound state.

cond-mat.str-el↗

arXiv2003

Quantum Size Effect in Conductivity of Multilayer Metal Films

Conductivity of quantized multilayer metal films is analyzed with an emphasis on scattering by rough interlayer interfaces. Three different types of quantum size effect (QSE) in conductivity are predicted. Two of these QSE are similar to those in films with scattering by rough walls. The third type of QSE is unique and is observed only for certain positions of the interface. The corresponding peaks in conductivity are very narrow and high with a finite cutoff which is due only to some other scattering mechanism or the smearing of the interface. There are two classes of these geometric resonances. Some of the resonance positions of the interface are universal and do not depend on the strength of the interface potential while the others are sensitive to this potential. This geometric QSE gradually disappears with an increase in the width of the interlayer potential barrier.

cond-mat.mes-hall↗

arXiv2002

Surface Roughness and Effective Stick-Slip Motion

The effect of random surface roughness on hydrodynamics of viscous incompressible liquid is discussed. Roughness-driven contributions to hydrodynamic flows, energy dissipation, and friction force are calculated in a wide range of parameters. When the hydrodynamic decay length (the viscous wave penetration depth) is larger than the size of random surface inhomogeneities, it is possible to replace a random rough surface by effective stick-slip boundary conditions on a flat surface with two constants: the stick-slip length and the renormalization of viscosity near the boundary. The stick-slip length and the renormalization coefficient are expressed explicitly via the correlation function of random surface inhomogeneities. The effective stick-slip length is always negative signifying the effective slow-down of the hydrodynamic flows by the rough surface (stick rather than slip motion). A simple hydrodynamic model is presented as an illustration of these general hydrodynamic results. The effective boundary parameters are analyzed numerically for Gaussian, power-law and exponentially decaying correlators with various indices. The maximum on the frequency dependence of the dissipation allows one to extract the correlation radius (characteristic size) of the surface inhomogeneities directly from, for example, experiments with torsional quartz oscillators.

cond-mat.soft↗

arXiv2002

Surface Roughness and New Type of Size Effect in Quantized Films

The effect of random surface roughness on quantum size effect in thin films is discussed. The conductivity of quantized metal films is analyzed for different types of experimentally identified correlation functions of surface inhomogeneities including the Gaussian, exponential, power-law correlators, and the correlators with a power law decay of the power density spectral function. The dependence of the conductivity $σ$ on the film thickness L, correlation radius of inhomogeneities R, and the fermion density is investigated. The goal is to help in extracting surface parameters from transport measurements and to determine the importance of the choice of the proper surface correlator for transport theory. A new type of size effect is predicted for quantized films with large correlation radius of random surface corrugation. The effect exists for inhomogeneities with Gaussian and exponential power spectrum; if the decay of power spectrum is slow, the films exhibit usual quantum size effect. The conductivity $% σ$ exhibits well-pronounced oscillations as a function of the channel width L or the density of fermions, and large steps as a function of the correlation radius R. These oscillations and steps are explained and their positions identified. This phenomenon, which is reminiscent of magnetic breakthrough, can allow direct observation of the quantum size effect in conductivity of nano-scale metal films. The only region with a nearly universal behavior of transport is the region in which particle wavelength is close to the correlation radius of surface inhomogeneities.

cond-mat.mes-hall↗

arXiv2001

A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons

We report on a new class of magnetoresistance oscillations observed in a high-mobility two-dimensional electron gas (2DEG) in GaAs-Al$_x$Ga$_{1-x}$As heterostructures. Appearing in a weak magnetic field ($B<$ 0.3 T) and only in a narrow temperature range (2 K $<T<$ 9 K), these oscillations are periodic in 1/B with a frequency proportional to the electron Fermi wave vector, $k_F$. We interpret the effect as a magnetophonon resonance of the 2DEG with leaky interface-acoustic phonon modes carrying a wave vector $q=2k_F$. Calculations show a few branches of such modes on the GaAs-Al$_x$Ga$_{1-x}$As interface, and their velocities are in quantitative agreement with the data.

cond-mat.mes-hall↗

arXiv2001

New type of conductivity oscillations in quantized films with rough walls

A new type of quantum size effect (QSE) oscillations is predicted for films with a relatively large correlation radius of surface inhomogeneities. The effect replaces usual QSE for random inhomogeneities with Gaussian and exponential power spectra. The well-pronounced oscillations of conductivity $σ$ as a function of channel width $L$ separate two distinct regions with different indices in the power-law dependence $σ(L) $. The oscillations are explained and their positions identified. The effect is reminiscent of magnetic breakthrough and can simplify observation of QSE in metals.

cond-mat.mes-hall↗

arXiv2000

Leaky interface phonons in AlGaAs/GaAs structures

A dispersion equation for the interface waves has been derived for the interface of two cubic crystals in the plane perpendicular to [001]. A reasonable hypothesis has been made about the total number of the acoustic modes. Due to this hypothesis the number is 64, but not all of the modes have physical meaning of the interface waves. The rules have been worked out to select physical branches among all 64 roots of dispersion equation. The physical meaning of leaky interface waves is discussed. The calculations have been made for the interface Al$_{0.3}$Ga$_{0.7}$As/GaAs. In this case all physical interface modes have been shown to be leaky. The velocities of the interface waves are calculated as a function of an angle in the plane of interface. The results support a recent interpretation of a new type oscillations of magnetoresistance as a resonant scattering of two-dimensional electron gas by the leaky interface phonons.

cond-mat.mes-hall↗

arXiv1999

Calculations of exchange interaction in impurity band of two-dimensional semiconductors with out of plane impurities

We calculate the singlet-triplet splitting for a couple of two-dimensional electrons in the potential of two positively charged impurities which are located out of plane. We consider different relations between vertical distances of impurities $h_1$ and $h_2$ and their lateral distance $R$. Such a system has never been studied in atomic physics but the methods, worked out for regular two-atomic molecules and helium atom, have been found to be useful. Analytical expressions for several different limiting configurations of impurities are obtained an interpolated formula for intermediate range of parameters is proposed. The $R$-dependence of the splitting is shown to become weaker with increasing $h_1,h_2$.

cond-mat.str-el↗

arXiv1999

Spin structure of impurity band of semiconductors in two and three-dimensional cases

The exchange interaction between electrons located at different randomly distributed impurities is studied for small density of impurities. The singlet-triplet splitting 2J(R) is calculated for two Coulomb centers at a distance R. Interpolated formulas are found which work for all distances R from zero to infinity. The data from atomic physics are used for the interpolation in three-dimensional case. For two-dimensional case the original calculations are performed to find asymptotic behavior of the splitting at large R, the splitting for the ``two-dimensional helium atom'' (R=0) and the splitting at $R=a_B$, where $a_B$ is the effective Bohr radius. The spin structure of impurity band is described by the Heisenberg Hamiltonian. The ground state of a system consists of localized singlets. The new results are obtained for the distribution of the singlet pairs in the ground state. These results are exact at low density. The problem is reduced to a non-trivial geometric problem which is solved in the mean field approximation and by computer modeling. The density of free electrons is found as a function of temperature and the distribution function of the singlet-triplet transitions energies is calculated. Both functions are given in an analytical form.

cond-mat.str-el↗

arXiv1998

Spin-spin interaction and magnetic state of 2-D Wigner crystal

It is demonstrated that there is anti-ferromagnetic spin-spin interaction between nearest electrons in the 2D Wigner crystal. This is also valid for the Wigner liquid - the state with destroyed long-range order but preserved short-range one. We calculate the value of the anti-ferromagnetic interaction (both analytically and numerically) and discuss a possible magnetic state of the Wigner crystal. This state can be strongly influenced by the spin-Peierls mechanism.

cond-mat.str-el↗