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I. Vobornik

Publications and source records attributed to I. Vobornik.

At least 19 recordsLinked to original sources

Dimensionality-Driven Electronic and Orbital Transitions Mediating Interfacial Magnetism in LaNiO3/CaMnO3 Observed In Situ

Emergent magnetic states at oxide interfaces arise from the interplay of charge transfer, orbital reconstruction, and dimensional confinement, offering a route to engineered correlated-electron behavior in nanoscale spintronic materials. Here, we combine in situ synthesis, polarization-dependent angle-resolved photoelectron spectroscopy, X-ray magnetic circular dichroism, and first-principles electronic-structure calculations to investigate LaNiO3/CaMnO3 superlattices. We show that reducing the LaNiO3 thickness drives a metal-insulator transition accompanied by loss of electronic coherence and an orbital-polarization crossover in the ultrathin limit. These changes weaken charge transfer across the interface and suppress the interfacial Mn magnetic moment in CaMnO3, revealing that the emergent ferromagnetic state is directly governed by electronic confinement in LaNiO3. The insulating state and orbital reconstruction are reproduced by density functional theory combined with dynamical mean-field theory. Together, these results establish a direct and tunable coupling among electronic, orbital, and magnetic degrees of freedom in oxide heterostructures.

cond-mat.str-el

First-order phase transition driven by competing charge-order fluctuations in 1T'-TaTe$_{2}$

First-order phase transitions, characterized by a discontinuous change in the order parameter, are intriguing phenomena in condensed matter physics. However, the underlying, material-specific, microscopic mechanisms often remain unclear. Here, we unveil a high-temperature incommensurate charge-order precursor with the wave vector $\mathbf{q}^* = (0, \frac{1}{4}+δ, \frac{1}{2})$ in the 1T' phase of TaTe$_2$, which competes with fluctuating high-temperature Ta trimer bonding states at $\mathbf{q}_\mathrm{CO} =(0, \frac{1}{3}, 0)$. The precursor state follows the temperature dependence of the hidden incommensurability of the $\textit{quasi}$-1D nested Fermi surface. In contrast, the low-temperature commensurate charge order at $\mathbf{q}_\mathrm{CO}$, characterized by a charge disproportionation of the inequivalent Ta sites, appears to be driven by local chemical bonding. Dynamical lattice calculations identify an imaginary optical mode at $\mathbf{q}^*$, involving an in-plane vibration of the Ta atoms forming a chain-like structure that renormalizes below $T_\mathrm{CO}$. Our experimental and theoretical observations suggest that the controversial first-order phase transition, as captured by phenomenological Ginzburg-Landau theory, results from the competition between two order parameters: one involving Fermi surface nesting and the other involving local chemical bonding.

cond-mat.str-el

Magnetoelastic coupling in intercalated transition metal dichalcogenides

The large van der Waals gap in transition metal dichalcogenides (TMDs) offers an avenue to host external metal atoms that modify the ground state of these 2D materials. Here, we experimentally and theoretically address the charge correlations in a family of intercalated TMDs. While short-range charge fluctuations develop in Co$_{1/3}$TaS$_{2}$ and Fe$_{1/3}$TaS$_{2}$, long-range charge order switches-on in Fe$_{1/3}$NbS$_{2}$ driven by the interplay of magnetic order and lattice degrees of freedom. The magnetoelastic coupling is demonstrated in Fe$_{1/3}$NbS$_{2}$ by the enhancement of the charge modulations upon magnetic field below T$_\mathrm{N}$, although Density Functional Perturbation Theory (DFPT) calculations predict negligible electron(spin)-phonon coupling. Furthermore, we show that Co-intercalated TaS$_2$ displays a kagome-like Fermi surface, hence opening the path to engineer electronic band structures and study the entanglement of spin, charge, and spin-phonon mechanisms in the large family of intercalated TMDs.

cond-mat.str-el

Monolayer control of spin-charge conversion in van der Waals heterostructures

The diversity of 2D materials and their van der Waals (vdW) stacking presents a fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only a single 2D material layer. However, such vdW materials engineering at the atomic scale has yet to be investigated for spin-charge interconversion phenomena. Here, we report on the control of these effects at the monolayer level, where drastic increase in intensity and change in sign of THz spintronic emission are demonstrated by inserting a single layer of MoSe$_2$ between PtSe$_2$ and graphene in a fully epitaxial, large area stacked structure. By using a combination of spin and angle resolved photoemission and density functional theory to reveal the electronic and spin structures, we illustrate two different mechanisms relying on charge transfer and electronic hybridization for the formation of Rashba states, which are responsible for spin-charge conversion and hence the THz spintronic emission. These findings open new pathways to design, at the atomic scale, efficient THz spintronic emitters made of 2D materials and other spintronic devices based on spin-charge interconversion phenomena.

cond-mat.mtrl-sci

Frustrated charge density wave and quasi-long-range bond-orientational order in the magnetic kagome FeGe

The intrinsic frustrated nature of a kagome lattice is amenable to the realization of exotic phases of matter, such as quantum spin liquids or spin ices, and more recently the multiple-$\mathrm{\textbf{q}}$ charge density waves (CDW) in the kagome metals. Despite intense efforts to understand the mechanism driving the electronic modulations, its origin is still unknown and hindered by competing interactions and intertwined orders. Here, we identify a dimerization-driven 2D hexagonal charge-diffuse precursor in the antiferromagnetic kagome metal FeGe and demonstrate that the fraction of dimerized/undimerized states is the relevant order parameter of the multiple-$\mathrm{\textbf{q}}$ CDW of a continuous phase transition. The pretransitional charge fluctuations with propagation vector $\mathrm{\textbf{q}=\textbf{q}_M}$ at T$_{\mathrm{CDW}}$$<$T$<$T$^*$(125 K) are anisotropic, hence holding a quasi-long-range bond-orientational order. The broken translational symmetry emerges from the anisotropic diffuse precursor, akin to the Ising scenario of antiferromagnetic triangular lattices. The temperature and momentum dependence of the critical scattering show parallels to the stacked hexatic $\mathrm{B}$-phases reported in liquid crystals and transient states of CDWs and highlight the key role of the topological defect-mediated melting of the CDW in FeGe.

cond-mat.str-el

Spin-dependent $π$$π^{\ast}$ gap in graphene on a magnetic substrate

We present a detailed analysis of the electronic properties of graphene/Eu/Ni(111). By using angle and spin-resolved photoemission spectroscopy and ab initio calculations, we show that the Eu-intercalation of graphene/Ni(111) restores the nearly freestanding dispersion of the $ππ^\ast$ Dirac cones at the K point with an additional lifting of the spin degeneracy due to the mixing of graphene and Eu states. The interaction with the magnetic substrate results in a large spin-dependent gap in the Dirac cones with a topological nature characterized by a large Berry curvature, and a spin-polarized van Hove singularity, whose closeness to the Fermi level gives rise to a polaronic band.

cond-mat.mes-hall

Self-stacked 1$\mathrm{T}$-1$\mathrm{H}$ layers in 6$\mathrm{R}$-NbSeTe and the emergence of charge and magnetic correlations due to ligand disorder

The emergence of correlated phenomena arising from the combination of 1$\mathrm{T}$ and 1$\mathrm{H}$ van der Waals layers is the focus of intense research. Here, we synthesize a novel self-stacked 6$\mathrm{R}$ phase in NbSeTe, showing a perfect alternating 1T and 1H layers that grow coherently along the c-direction, as revealed by scanning transmission electron microscopy. Angle resolved photoemission spectroscopy shows a mixed contribution of the trigonal and octahedral Nb bands to the Fermi level. Diffuse scattering reveals temperature-independent short-range charge fluctuations with propagation vector $\mathrm{q_{CO}}$=(0.25,0), derived from the condensation of a longitudinal mode in the 1T layer. We observe that ligand disorder quenches the formation of a charge density wave. Magnetization measurements suggest the presence of an inhomogeneous, short-range magnetic order, further supported by the absence of a clear phase transition in the specific heat. These experimental analyses in combination with \textit{ab initio} calculations indicate that the ground state of 6$\mathrm{R}$-NbSeTe is described by a statistical distribution of short-range charge-modulated and spin-correlated regions driven by ligand disorder. Our results devise a route to synthesize 1$\mathrm{T}$-1$\mathrm{H}$ self-stacked bulk heterostructures to study emergent phases of matter.

cond-mat.mtrl-sci

Unveiling the electronic structure of pseudo-tetragonal WO$_3$ thin films

WO$_3$ is a binary 5d compound which has attracted remarkable attention due to the vast array of structural transitions that it undergoes in its bulk form. In the bulk, a wide range of electronic properties has been demonstrated, including metal-insulator transitions and superconductivity upon doping. In this context, the synthesis of WO$_3$ thin films holds considerable promise for stabilizing targeted electronic phase diagrams and embedding them in technological applications. However, to date, the electronic structure of WO$_3$ thin films is experimentally unexplored, and only characterized by numerical calculations. Underpinning such properties experimentally would be important to understand not only the collective behavior of electrons in this transition metal oxide, but also to explain and engineer both the observed optical responses to carriers' concentration and its prized catalytic activity. Here, by means of tensile strain, we stabilize WO$_3$ thin films into a stable phase, which we call pseudo-tetragonal, and we unveil its electronic structure by combining photoelectron spectroscopy and density functional theory calculations. This study constitutes the experimental demonstration of the electronic structure of WO$_3$ thin-films and allows us to pin down the first experimental benchmarks of the fermiology of this system.

cond-mat.mtrl-sci

Tuning Dirac nodes with correlated d-electrons in BaCo_{1-x}Ni_{x}S_{2}

Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step towards the realization of novel concepts of electronic devices and quantum computation. By means of ARPES experiments and ab initio simulations, here we show that Dirac states can be effectively tuned by doping a transition metal sulfide, BaNiS2, through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge transfer gap of BaCo_{1-x}Ni_{x}S_{2} across its phase diagram, lead to the formation of Dirac lines whose position in k-space can be displaced along the Gamma M symmetry direction, and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making BaCo_{1-x}Ni_{x}S_{2} a model system to functionalize Dirac materials by varying the strength of electron correlations.

cond-mat.str-el

Observation of the Critical State to Multiple-Type Dirac Semimetal Phases in KMgBi

Dirac semimetals (DSMs) are classified into different phases based on the types of the Dirac fermions. Tuning the transition among different types of the Dirac fermions in one system remains challenging. Recently, KMgBi was predicted to be located at a critical state that various types of Dirac fermions can be induced owing to the existence of a flat band. Here, we carried out systematic studies on the electronic structure of KMgBi single crystal by combining angle-resolve photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS). The flat band was clearly observed near the Fermi level. We also revealed a small bandgap of ~ 20 meV between the flat band and the conduction band. These results demonstrate the critical state of KMgBi that transitions among various types of Dirac fermions can be tuned in one system.

cond-mat.mtrl-sci

Coexistence of ferromagnetism and spin-orbit coupling by incorporation of platinum in two-dimensional VSe$_2$

We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homogeneous 2D alloy restores ferromagnetic order with Curie temperatures of 6 K for 5 monolayers and 25 K for one monolayer of V$_{0.65}$Pt$_{0.35}$Se$_2$. Moreover, the presence of platinum atoms gives rise to Rashba spin-orbit coupling in (V,Pt)Se$_2$ providing an original platform to study the interplay between ferromagnetism and spin-orbit coupling in the 2D limit.

cond-mat.mtrl-sci

Transport properties of band engineered p-n heterostructures of epitaxial Bi$_2$Se$_3$/(Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$ topological insulators

The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here, we present a heterostructure approach for epitaxial BSTS growth. A thin n-type Bi$_2$Se$_3$ (BS) layer is used as an epitaxial and electrostatic seed which drastically improves the crystalline and electronic quality and reproducibility of the sample properties. In heterostructures of BS with p-type (Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$ (BSTS) we demonstrate intrinsic band bending effects to tune the electronic properties solely by adjusting the thickness of the respective layer. The analysis of weak anti-localization features in the magnetoconductance indicates a separation of top and bottom conduction layers with increasing BSTS thickness. By temperature- and gate-dependent transport measurements, we show that the thin BS seed layer can be completely depleted within the heterostructure and demonstrate electrostatic tuning of the bands via a back-gate throughout the whole sample thickness.

cond-mat.mtrl-sci

The nature of ferromagnetism in the chiral helimagnet $Cr_{1/3}NbS_{2}$

The chiral helimagnet, $Cr_{1/3}NbS_{2}$, hosts exotic spin textures, whose influence on the magneto-transport properties, make this material an ideal candidate for future spintronic applications. To date, the interplay between macroscopic magnetic and transport degrees of freedom is believed to result from a reduction in carrier scattering following spin order. Here, we present electronic structure measurements through the helimagnetic transition temperature, $T_{C}$ that challenges this view by showing a Fermi surface comprised of strongly hybridized Nb- and Cr- derived electronic states, and spectral weight in proximity to the Fermi level to anomalously increases as temperature is lowered below $T_{C}$. These findings are rationalized on the basis of first principle, density functional theory calculations, which reveal a large nearest-neighbor exchange energy, suggesting the interaction between local spin moments and hybridized Nb- and Cr- derived itinerant states to go beyond the perturbative interaction of Ruderman-Kittel-Kasuya-Yosida, suggesting instead a mechanism rooted in a Hund's exchange interaction.

cond-mat.mtrl-sci

Weyl-like points from band inversions of spin-polarised surface states in NbGeSb

Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by aliovalent substitution of Nb for Zr and Sb for S in the ZrSiS family of nonsymmorphic semimetals. Using angle-resolved photoemission and density-functional theory, we show how two pairs of surface states, known from ZrSiS, are driven to intersect each other in the vicinity of the Fermi level in NbGeSb, as well as to develop pronounced spin-orbit mediated spin splittings. We demonstrate how mirror symmetry leads to protected crossing points in the resulting spin-orbital entangled surface band structure, thereby stabilising surface state analogues of three-dimensional Weyl points. More generally, our observations suggest new opportunities for engineering topologically and symmetry-protected states via band inversions of surface states.

cond-mat.mtrl-sci

Surface states and Rashba-type spin polarization in antiferromagnetic MnBi$_2$Te$_4$

The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure.

cond-mat.str-el

Electronic correlation determining correlated plasmons in Sb-doped Bi$_2$Se$_3$

Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magneto resistance and high temperature superconductivity in correlated electron systems. Recently, it has been shown that electronic correlation may also be responsible for the formation of unconventional plasmons. Herewith, using a combination of angle-dependent spectroscopic ellipsometry, angle resolved photoemission spectroscopy and Hall measurements all as a function of temperature supported by first-principles calculations, the existence of low-loss high-energy correlated plasmons accompanied by spectral weight transfer, a fingerprint of electronic correlation, in topological insulator (Bi$_{0.8}$Sb$_{0.2}$)$_2$Se$_3$ is revealed. Upon cooling, the density of free charge carriers in the surface states decreases whereas those in the bulk states increase, and that the newly-discovered correlated plasmons are key to explaining this phenomenon. Our result shows the importance of electronic correlation in determining new correlated plasmons and opens a new path in engineering plasmonic-based topologically-insulating devices.

cond-mat.mtrl-sci

Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces

The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigned to silicon dangling bonds on the basis of measured binding energies and photoemission intensity changes between horizontal and vertical light polarisations. Three surface states ($S_1$, $S_2$ and $S_4$), observed in the Si(110)"16 x 2" reconstruction, were assigned to Si adatoms and Si atoms present at the edges of the corrugated terrace structure. Only one of the four surface states, $S_3$, was observed in both the Si(110)"16 x 2" and 1 x 1 band maps and consequently attributed to the pervasive Si zigzag chains that are components of both the Si(110)"16 x 2" and 1 x 1 surfaces. A state in the bulk-band region was attributed to an in-plane bond. All data were consistent with the adatom-buckling model of the Si(110)"16 x 2" surface. Whilst room temperature measurements of $P_y$ and $P_z$ were statistically compatible with zero, $P_x$ measurements of the enantiomorphic A-type and B-type Si(110)"16 x 2" surfaces gave small average polarisations of around 1.5\% that were opposite in sign. Further measurements at 77 K on A-type Si(110)"16 x 2" surface gave a smaller value of +0.3\%. An upper limit of $\sim1\%$ may thus be taken for the longitudinal polarisation.

cond-mat.mtrl-sci

A general route to form topologically-protected surface and bulk Dirac fermions along high-symmetry lines

The band inversions that generate the topologically non-trivial band gaps of topological insulators and the isolated Dirac touching points of three-dimensional Dirac semimetals generally arise from the crossings of electronic states derived from different orbital manifolds. Recently, the concept of single orbital-manifold band inversions occurring along high-symmetry lines has been demonstrated, stabilising multiple bulk and surface Dirac fermions. Here, we discuss the underlying ingredients necessary to achieve such phases, and discuss their existence within the family of transition metal dichalcogenides. We show how their three-dimensional band structures naturally produce only small $k_z$ projected band gaps, and demonstrate how these play a significant role in shaping the surface electronic structure of these materials. We demonstrate, through spin- and angle-resolved photoemission and density functional theory calculations, how the surface electronic structures of the group-X TMDs PtSe$_2$ and PdTe$_2$ are host to up to five distinct surface states, each with complex band dispersions and spin textures. Finally, we discuss how the origin of several recently-realised instances of topological phenomena in systems outside of the TMDs, including the iron-based superconductors, can be understood as a consequence of the same underlying mechanism driving $k_z$-mediated band inversions in the TMDs.

cond-mat.mtrl-sci