arXiv subjects

Ian Babich

Publications and source records attributed to Ian Babich.

5 recordsLinked to original sources

arXiv2026

Polymer-free van der Waals assembly of 2D material heterostructures using muscovite crystals

The advent of van der Waals (vdW) heterostructures has enabled formation of bespoke materials with atomic precision, where numerous quantum and topological phenomena have already been discovered. This atomic-layer tunability, however, comes at a cost: individual 2D layers must be picked up, moved, and placed in a deterministic manner while keeping their interfaces atomically clean. Recent advances in machine learning and robotics place even stronger emphasis on the deterministic aspect of vdW assembly. Current polymer-based transfer methods satisfy neither the determinism nor cleanliness requirements. To this end, solutions are needed where adhesion can be dynamically and deterministically controlled without leaving organic contamination. Here, we present a polymer free transfer technique employing thin muscovite (mica) crystals. Temperature control over mica adhesion enables deterministic pick-up, stacking, and release of 2D materials, while their crystalline, inorganic nature ensures pristine interfaces and suppresses strain. Fully compatible with existing fabrication workflows, this approach enables the assembly of demanding vdW heterostructures, including those with exposed conductive layers, moir\'e superlattices and suspended membranes. Our method represents a promising strategy for vdW heterostructure fabrication toward its automatization.

cond-mat.mes-hall↗

arXiv2025

Diode effect in Shapiro steps in an asymmetric SQUID with a superconducting nanobridge

We investigate the Josephson diode effect in an asymmetric SQUID consisting of a sinusoidal Josephson junction formed by a Bi$_2$Te$_2$Se flake and a superconducting Nb nanobridge with a linear and multivalued current-phase relation (CPR). Current-voltage characteristics were measured both in the absence (dc regime) and presence (ac regime) of external microwave irradiation. Our dc measurements reveal only weak critical current asymmetry (i.e. weak Josephson diode effect), while confirming the multivalued behavior of the SQUID. At the same time, the key finding of this work is the observation of strong Shapiro step asymmetry (concerning the dc current direction) in the ac regime at finite magnetic flux. This peculiarity oscillates as a function of magnetic field with the SQUID's periodicity and varies non-monotonically with the increase in microwave power. Our theoretical model shows that the pronounced Shapiro step asymmetry, despite the small diode effect in critical current, arises from the interplay between the sinusoidal and multivalued CPRs of the junctions.

cond-mat.supr-con↗

arXiv2025

Proximity screening greatly enhances electronic quality of graphene

The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality two-dimensional gases with transport and quantum mobilities reaching close to 10$^8$ and 10$^6$ cm$^2$/Vs, respectively. Although the quality of graphene devices has also been improving, it remains comparatively lower. Here we report a transformative improvement in the electronic quality of graphene by employing graphite gates placed in its immediate proximity, at 1 nm separation. The resulting screening reduces charge inhomogeneity by two orders of magnitude, bringing it down to a few 10$^7$ cm$^-2$ and limiting potential fluctuations to less than 1 meV. Quantum mobilities reach 10$^7$ cm$^2$/Vs, surpassing those in the highest-quality semiconductor heterostructures by an order of magnitude, and the transport mobilities match their record. This quality enables Shubnikov-de Haas oscillations in fields as low as 1 mT and quantum Hall plateaus below 5 mT. Although proximity screening predictably suppresses electron-electron interactions, fractional quantum Hall states remain observable with their energy gaps reduced only by a factor of 3-5 compared to unscreened devices, demonstrating that many-body phenomena at spatial scales shorter than 10 nm remain robust. Our results offer a reliable route to improving electronic quality in graphene and other two-dimensional systems, which should facilitate the exploration of new physics previously obscured by disorder.

cond-mat.mes-hall↗

arXiv2023

Limitations of the current-phase relation measurements by an asymmetric dc-SQUID

Exotic quantum transport phenomena established in Josephson junctions (JJs) are reflected by a non-sinusoidal current-phase relation (CPR). The solidified approach to measure the CPR is via an asymmetric dc-SQUID with a reference JJ that has a high critical current. We probed this method by measuring CPRs of hybrid JJs based on a 3D topological insulator (TI) Bi$_2$Te$_2$Se with a nanobridge acting as a reference JJ. We captured both highly skewed and sinusoidal critical current oscillations within single devices which contradicts the uniqueness of the CPR. This implies that the widely used method provides inaccurate CPR measurement and leads to misinterpretation. It was shown that the accuracy of the CPR measurement is mediated by the asymmetry in derivatives of the CPRs but not in critical currents as was previously thought. We provided considerations for an accurate CPR measurement that encourage future experiments with reference CPRs different from those that were used before.

cond-mat.supr-con↗

arXiv2022

Revealing intrinsic superconductivity of the Nb/BiSbTe$_2$Se interface

Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here we observed and analyzed the double critical current in the Josephson junctions based on the topological insulator in the fabricated planar Superconducting Quantum Interference Device. By measuring critical currents as a function of temperature and magnetic field, we show that the second critical current stems from the intrinsic superconductivity of the S/TI interface, which is supported by the modified Resistively Shunted Junction model and Transmission Electron Microscopy studies. This complex structure of the interface should be taken into account when technological process involves Ar-plasma cleaning.

cond-mat.supr-con↗