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Ian D. R. Mackinnon

Publications and source records attributed to Ian D. R. Mackinnon.

2 recordsLinked to original sources

Hopping mechanism for superconductivity revealed by Density Functional Theory

Electronic band structures of MgB2 show that sigma bands along the G-A reciprocal direction (parallel to the c-axis) in combination with electron-phonon coupling to the E2g mode effect charge transfer. DFT calculation shows that the cosine-shaped sigma band along G-A reveals energy asymmetry matching the superconducting gap. Sigma bands parallel to the G-A direction calculated at intervals along the G-M direction show band structure unlike that at high symmetry nodes. For example, bands in close proximity to EF do not emulate the degeneracy of bands along G-A. Near EF, bands split and align favourably for electron-hole pairing with the nodal inflection point located at EF. With increased isotropic pressure, changes to sigma bands near EF occur with increased intersections of folded Fermi-surfaces and band crossings. Band intersections that define the fraction of coherent nesting at pressure show equivalent estimates for Tc determined by experiment and by the Kohn phonon anomaly. Tight-binding equations, including corrections to describe the observed asymmetry of a cosine-shaped band, show that a hopping mechanism is associated with cosine band asymmetry, the superconducting gap and Fermi surface nesting. Cosine band asymmetry may be inimical to superconductivity mechanisms in multi-element compounds.

cond-mat.supr-con↗

Experimental control of Tc in AlB2-type compounds using an applied voltage

We utilize the van de Pauw technique combined with Density Functional Theory to show that an external voltage applied to superconducting AlB2-type compounds, such as MgB2 and Mg(B1.9C0.1), effects substantive changes in transition temperature due to modification of electronic band structure. An applied voltage results in a symmetric split of degenerate sigma bands in MgB2 similar to that calculated for atom displacement along the B-B bond aligned with E2g phonon mode directions. For AlB2, similar splitting of sigma bands occurs albeit with higher voltage requirement compared to MgB2. Experimental data show that Tc values for MgB2 and Mg(B1.9C0.1) reduce consistently with increased increments of applied voltage. Zero resistance is limited by an upper applied voltage depending on the compound.

cond-mat.supr-con↗