arXiv subjects

Ian D. Sharp

Publications and source records attributed to Ian D. Sharp.

17 recordsLinked to original sources

arXiv2026

Interplay between Electronic Structure, Chemical Bonding, and Lattice Symmetry in Bismuth Vanadate

Bismuth vanadate (BiVO$_4$) is a prototypical oxide photocatalyst that occurs in both tetragonal and monoclinic scheelite phases with markedly different photocatalytic and photoelectrochemical activities. Accurately identifying the monoclinic phase as the ground state and explaining the origin of its symmetry-breaking distortion are unusually challenging from a theoretical perspective, with various levels of theory and associated physical interpretations for this behaviour reported in the literature. Here, we resolve these discrepancies by systematically assessing the role of exact exchange with and without spin-orbit coupling, demonstrating that an accurate treatment of electronic localization is essential to stabilize the monoclinic scheelite structure. Using this framework, we compute the electronic band structure through dense sampling of the Brillouin zone and show that the band edges in monoclinic and tetragonal BiVO$_4$ lie far from conventional high-symmetry paths, leading to substantial differences in band gaps and carrier effective masses. Choosing the exchange-correlation functional that best reproduces the crystal structure leads to excellent predictions of the band gap once excitonic and thermal effects are taken into account. In addition, we show that the monoclinic distortion is driven by charge transfer between non-equivalent oxygen sites, which breaks the lattice symmetry and is suppressed by self-interaction errors when using semi-local DFT. These results establish a direct connection between the exchange-correlation functional, electronic localization, chemical bonding, and structural stability in BiVO$_4$, providing a foundation for robust ab initio descriptions of phase stability and optoelectronic properties in such complex oxides.

cond-mat.mtrl-sci↗

arXiv2026

Quantifying Thermal, Photovoltage, and Defect Contributions to Transient Absorption of Ta$_{3}$N$_{5}$ Photoanodes

Ta$_{3}$N$_{5}$ is among the most intensively studied photoanode materials for solar-driven water oxidation, yet its performance often remains limited by short carrier lifetimes and defect mediated recombination. Although transient absorption spectroscopy is widely used to probe carrier dynamics in photoelectrodes, spectral assignments are frequently ambiguous due to overlapping contributions. Here, microsecond-to-second transient absorption of Ta$_{3}$N$_{5}$ thin films is combined with complementary optical spectroscopies to disentangle contributions from lattice heating, electrostatics, and defect states. Photoreflectance reveals three critical points in the Ta$_{3}$N$_{5}$ band structure, including two anisotropic near-edge transitions at 2.14 eV and 2.27 eV and a higher-lying transition near 2.80 eV, all closely aligned with dominant transient absorption features. A previously unreported photo-induced absorption at 2.80 eV is attributed to pump-induced lattice heating, while potential-dependent measurements reveal that near-edge bleach features arise from pump-induced band flattening and subsequent surface photovoltage relaxation. Fitting transient absorption spectra with independently measured thermal and electrostatic components enables quantification of both thermal and photovoltage dynamics, while the sub-bandgap response provides insight into the redistribution of defect charge states. Thus, this approach to quantifying thermal, electrostatic, and defect-mediated contributions to microsecond-to-second transient absorption provides broadly applicable insights into photoexcitation and relaxation mechanisms in functional semiconductor photoelectrodes.

cond-mat.mtrl-sci↗

arXiv2025

Ultrafast light-induced formation of a metastable hidden state in bismuth vanadate

Bismuth vanadate (BiVO$_4$) is a key photocatalyst for solar fuel applications, yet fundamental questions remain regarding the nature of photogenerated polaronic states and the lattice dynamics that govern its light-to-chemical pathways. Here, we use femtosecond optical pump-X-ray probe measurements to track the photoinduced electronic and structural dynamics in BiVO$_4$ across multiple length and time scales. Transient X-ray absorption spectroscopy captures sub-picosecond electron localization within VO$_4$ tetrahedra, consistent with small polaron formation, whereas time-resolved X-ray diffraction reveals a slower, multi-picosecond lattice reorganization into a hidden photoexcited state that is structurally distinct from both the monoclinic ground state and the high-temperature tetragonal phase. Supported by density functional theory, we show that hole-lattice interactions dynamically reduce the ground state monoclinic distortion, stabilizing the hidden state. Our results demonstrate that electron- and hole-lattice coupling jointly shape the excited state landscape, with implications for carrier transport, interfacial energetics, and light-to-chemical energy conversion pathways.

cond-mat.mtrl-sci↗

arXiv2025

Al$_{1-x}$Hf$_{x}$N Thin Films with Enhanced Piezoelectric Responses for GHz Surface Acoustic Wave Devices

Ternary compounds obtained by alloying wurtzite AlN with transition metals have emerged as promising materials with significantly enhanced piezoelectric characteristics relative to binary AlN. The increased electromechanical coupling in these compounds boosts the performance of high-frequency acoustic devices. So far, progress has largely focused on Al$_{1-x}$Sc$_x$N, which is costly and poorly compatible with complementary metal-oxide-semiconductor (CMOS) technologies. Here, we investigate aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) as a scalable and potentially CMOS-compatible alternative to Al$_{1-x}$Sc$_x$N. Using reactive co-sputtering on both Si and sapphire substrates, we demonstrate wurtzite Al$_{1-x}$Hf$_{x}$N thin films ($x \leq 0.17$) with strong $c$-axis texture and nearly isotropic lattice expansion upon Hf incorporation. X-ray absorption spectroscopy indicates cross-gap hybridization between N 2$p$ and Hf 5$d$ states, which can enhance the Born effective charge and, thereby, the piezoelectric response. Correspondingly, we observe a nearly two-fold enhancement in the piezoelectric coefficient, $d_{33}$, relative to AlN, despite increasing structural disorder in Al$_{1-x}$Hf$_{x}$N. Building on this finding, we demonstrate Al$_{1-x}$Hf$_{x}$N GHz surface acoustic wave (SAW) resonators that exhibit enhanced performance, as well as efficient excitation of bulk acoustic waves with low propagation losses. These results establish Al$_{1-x}$Hf$_{x}$N as a promising platform for next-generation high-frequency electromechanical devices, with prospects for further piezoelectric enhancements through improved epitaxy.

cond-mat.mtrl-sci↗

arXiv2024

Fabrication of functional 3D nanoarchitectures via atomic layer deposition on DNA origami crystals

While DNA origami is a powerful bottom-up fabrication technique, the physical and chemical stability of DNA nanostructures is generally limited to aqueous buffer conditions. Wet chemical silicification can stabilise these structures but does not add further functionality. Here, we demonstrate a versatile 3D nanofabrication technique to conformally coat micrometre-sized DNA origami crystals with functional metal oxides via atomic layer deposition (ALD). In addition to depositing homogenous and conformal nanometre-thin ZnO, TiO2, and IrO2 (multi)layers inside SiO2-stablised crystals, we establish a method to directly coat bare DNA crystals with ALD layers while maintaining the crystal integrity, enabled by critical point drying and low ALD process temperatures. As a proof-of-concept application, we demonstrate electrocatalytic water oxidation using ALD IrO2-coated DNA origami crystals, resulting in improved performance relative to planar films. Overall, our coating strategy establishes a tool set for designing custom-made 3D nanomaterials with precisely defined topologies and material compositions, combining the unique advantages of DNA origami and atomically controlled deposition of functional inorganic materials.

physics.app-ph↗

arXiv2024

Atomically Flat Dielectric Patterns for Band Gap Engineering and Lateral Junction Formation in MoSe$_2$ Monolayers

Combining a precise sputter etching method with subsequent AlO$_x$ growth within an atomic layer deposition chamber enables fabrication of atomically flat lateral patterns of SiO$_2$ and AlO$_x$. The transfer of MoSe$_2$ monolayers onto these dielectrically modulated substrates results in formation of lateral heterojunctions, with the flat substrate topography leading to minimal strain across the junction. Kelvin probe force microscopy (KPFM) measurements show significant variations in the contact potential difference (CPD) across the interface, with AlO$_x$ regions inducing a 230~mV increase in CPD. Spatially resolved photoluminescence spectroscopy reveals shifts in spectral weight of neutral and charged exciton species across the different dielectric regions. On the AlO$_x$ side, the Fermi energy moves closer to the conduction band, leading to a higher trion-to-exciton ratio, indicating a bandgap shift consistent with CPD changes. In addition, transient reflection spectroscopy highlights the influence of the dielectric environment on carrier dynamics, with the SiO$_2$ side exhibiting rapid carrier decay typical of neutral exciton recombination. In contrast, the AlO$_x$ side shows slower, mixed decay behavior consistent with conversion of trions back into excitons. These results demonstrate how dielectric substrate engineering can tune the electronic and optical characteristics of proximal two-dimensional materials, allowing scalable fabrication of advanced junctions for novel (opto)electronics applications.

cond-mat.mtrl-sci↗

arXiv2024

MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands

InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and third telecom windows with similar performance remains an open challenge. Here, we report an optimized heterostructure design for QDs emitting in the O- and C-bands grown by means of molecular beam epitaxy. The InAs QDs are grown on compositionally graded InGaAs buffers, which act as virtual substrates, and are embedded in mostly relaxed active regions. Reciprocal space maps of the indium profiles and optical absorption spectra are used to optimize In0.22Ga0.78As and In0.30Ga0.70As active regions, accounting for the chosen indium grading profile. This approach results in a tunable QD photoluminescence (PL) emission from 1200 up to 1600 nm. Power and polarization dependent micro-PL measurements performed at 4 K reveal exciton-biexciton complexes from quantum dots emitting in the telecom O- and C-bands. The presented study establishes a flexible platform that can be an essential component for advanced photonic devices based on InAs/GaAs that serve as building blocks for future quantum networks.

cond-mat.mes-hall↗

arXiv2023

Diamond-lattice photonic crystals assembled from DNA origami

Colloidal self-assembly allows rational design of structures on the micrometer and submicrometer scale. One architecture that can generate complete 3D photonic band gaps is the diamond cubic lattice, which has remained difficult to realize at length scales comparable to the wavelength of visible or ultraviolet light. Here, we demonstrate three-dimensional photonic crystals self-assembled from DNA origami that act as precisely programmable patchy colloids. Our DNA-based nanoscale tetrapods crystallize into a rod-connected diamond cubic lattice with a periodicity of 170 nm. This structure serves as a scaffold for atomic layer deposition of high refractive index materials such as TiO$_2$, yielding a tunable photonic band gap in the near-ultraviolet.

physics.app-ph↗

arXiv2023

Solution-processed NiPS3 thin films from Liquid Exfoliated Inks with Long-Lived Spin-Entangled Excitons

Antiferromagnets are promising materials for future opto-spintronic applications since they show spin dynamics in the THz range and no net magnetization. Recently, layered van der Waals (vdW) antiferromagnets have been reported, which combine low-dimensional excitonic properties with complex spin-structure. While various methods for the fabrication of vdW 2D crystals exist, formation of large area and continuous thin films is challenging because of either limited scalability, synthetic complexity, or low opto-spintronic quality of the final material. Here, we fabricate centimeter-scale thin films of the van der Waals 2D antiferromagnetic material NiPS3, which we prepare using a crystal ink made from liquid phase exfoliation (LPE). We perform statistical atomic force microscopy (AFM) and scanning electron microscopy (SEM) to characterize and control the lateral size and number of layers through this ink-based fabrication. Using ultrafast optical spectroscopy at cryogenic temperatures, we resolve the dynamics of photoexcited excitons. We find antiferromagnetic spin arrangement and spin-entangled Zhang-Rice multiplet excitons with lifetimes in the nanosecond range, as well as ultranarrow emission linewidths, despite the disordered nature of our films. Thus, our findings demonstrate scalable thin-film fabrication of high-quality NiPS3, which is crucial for translating this 2D antiferromagnetic material into spintronic and nanoscale memory devices and further exploring its complex spin-light coupled states.

physics.chem-ph↗

arXiv2022

Using metal-organic frameworks to confine liquid samples for nanoscale NV-NMR

Atomic-scale magnetic field sensors based on nitrogen vacancy (NV) defects in diamonds are an exciting platform for nanoscale nuclear magnetic resonance (NMR) spectroscopy. The detection of NMR signals from a few zeptoliters to single molecules or even single nuclear spins has been demonstrated using NV-centers close to the diamond surface. However, fast molecular diffusion of sample molecules in and out of nanoscale detection volumes impedes their detection and limits current experiments to solid-state or highly viscous samples. Here, we show that restricting diffusion by confinement enables nanoscale NMR spectroscopy of liquid samples. Our approach uses metal-organic frameworks (MOF) with angstrom-sized pores on a diamond chip to trap sample molecules near the NV-centers. This enables the detection of NMR signals from a liquid sample, which would not be detectable without confinement. These results set the route for nanoscale liquid-phase NMR with high spectral resolution.

physics.app-ph↗

arXiv2021

Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina

Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface manipulation of 3D structured surfaces on the atomic scale. While ALD allows the synthesis of conformal films at low temperature with utmost control over the thickness, atomically-defined closed coatings and surface modifications are still extremely difficult to achieve because of three-dimensional growth during nucleation. Here, we present a route towards sub-nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon (Si) substrates for the spatial control of the surface charge density and interface energetics. We use trimethylaluminum (TMA) in combination with remote hydrogen plasma instead of a gas-phase oxidant for the transformation of silicon oxide into alumina (AlOx). During the initial ALD cycles, TMA reacts with the surface oxide (SiO2) on silicon until there is a saturation of bindings sites, after which the oxygen from the underlying surface oxide is consumed, thereby transforming the silicon oxide into Si capped with AlOx. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which we exploit to create sub-nanometer thin and continuous AlOx layers deposited in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx/SiO2 interfaces possessing step heights as small as 0.3 nm and surface potential steps in excess of 0.4 V. In addition, the introduction of fixed negative charges of $9 \times 10^{12}$ cm$^{-2}$ enables modulation of the surface band bending, which is relevant to the field-effect passivation of Si and low-impedance charge transfer across contact interfaces.

cond-mat.mtrl-sci↗

arXiv2021

Scalable transparent conductive thin films with electronically passive interfaces for direct chemical vapor deposition of 2D materials

We present a novel transparent conductive support structure for two-dimensional (2D) materials that provides an electronically passive 2D/3D interface while also enabling facile interfacial charge transport. This structure, which comprises an evaporated nanocrystalline carbon (nc-C) film beneath an atomic layer deposited alumina (ALD AlOx) layer, is thermally stable and allows direct chemical vapor deposition (CVD) of 2D materials onto the surface. When the nc-C/AlOx is deposited onto a 270 nm SiO2 layer on Si, strong optical contrast for monolayer flakes is retained. Raman spectroscopy reveals good crystal quality for MoS2 and we observe a ten-fold photoluminescence intensity enhancement compared to flakes on conventional Si/SiO2. Tunneling across the ultrathin AlOx enables interfacial charge injection, which we demonstrate by artifact-free scanning electron microscopy and photoemission electron microscopy. Thus, this combination of scalable fabrication and electronic conductivity across a weakly interacting 2D/3D interface opens up new application and characterization opportunities for 2D materials.

physics.app-ph↗

arXiv2021

Surface NMR using quantum sensors in diamond

Characterization of the molecular properties of surfaces under ambient or chemically reactive conditions is a fundamental scientific challenge. Moreover, many traditional analytical techniques used for probing surfaces often lack dynamic or molecular selectivity, which limits their applicability for mechanistic and kinetic studies under realistic chemical conditions. Nuclear magnetic resonance spectroscopy (NMR) is a widely used technique and would be ideal for probing interfaces due to the molecular information it provides noninvasively. However, it lacks the sensitivity to probe the small number of spins at surfaces. Here, we use nitrogen vacancy (NV) centers in diamond as quantum sensors to optically detect nuclear magnetic resonance signals from chemically modified aluminum oxide surfaces, prepared with atomic layer deposition (ALD). With the surface NV-NMR technique, we are able to monitor in real-time the formation kinetics of a self assembled monolayer (SAM) based on phosphonate anchoring chemistry to the surface. This demonstrates the capability of quantum sensors as a new surface-sensitive tool with sub-monolayer sensitivity for in-situ NMR analysis with the additional advantage of a strongly reduced technical complexity.

physics.app-ph↗

arXiv2021

Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN

Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is experimentally challenging to create continuous monolayers by ALD because surface inhomogeneities and precursor steric interactions result in island growth during film nucleation. Thus, the ability to create pin-hole free monolayers by ALD would offer new opportunities for controlling interfacial charge and mass transport in semiconductor devices, as well as for tailoring surface chemistry. Here, we report full encapsulation of c-plane gallium nitride (GaN) with an ultimately thin (~3 {\AA}) aluminum oxide (AlOx) monolayer, which is enabled by the partial conversion of the GaN surface oxide into AlOx using a combination of trimethylaluminum deposition and hydrogen plasma exposure. Introduction of monolayer AlOx significantly modifies the physical and chemical properties of the surface, decreasing the work function and introducing new chemical reactivity to the GaN surface. This tunable interfacial chemistry is highlighted by the reactivity of the modified surface with phosphonic acids under standard conditions, which results in self-assembled monolayers with densities approaching the theoretical limit. More broadly, the presented monolayer AlOx deposition scheme can be extended to other dielectrics and III-V-based semiconductors, with significant relevance for applications in optoelectronics, chemical sensing, and (photo)electrocatalysis.

cond-mat.mtrl-sci↗

arXiv2020

The spatial collection efficiency of photogenerated charge carriers in photovoltaic and photoelectrochemical devices

The spatial collection efficiency portrays the driving forces and loss mechanisms in photovoltaic and photoelectrochemical devices. It is defined as the fraction of photogenerated charge carriers created at a specific point within the device that contribute to the photocurrent. In stratified planar structures, the spatial collection efficiency can be extracted out of photocurrent action spectra measurements empirically, with few a priori assumptions. Although this method was applied to photovoltaic cells made of well-understood materials, it has never been used to study unconventional materials such as metal-oxide semiconductors that are often employed in photoelectrochemical cells. This perspective shows the opportunities that this method has to offer for investigating new materials and devices with unknown properties. The relative simplicity of the method, and its applicability to operando performance characterization, makes it an important tool for analysis and design of new photovoltaic and photoelectrochemical materials and devices.

physics.chem-ph↗

arXiv2018

Hybrid photo-electrochemical and photo-voltaic cells (HPEV cells)

The majority of photoelectrochemical (PEC) water splitting cells cannot drive the overall water splitting reactions without the assistance of an external power source. To provide added power, the cells are usually connected to photovoltaic (PV) devices in a tandem arrangement. This approach suffers from severe disadvantages since the PEC cell is connected in series to the PV cell and the overall current is typically limited by the saturation current of the PEC component. Thus, the operating point of the PV cell is often far from optimal and the overall system efficiency tends to be low. We propose a multi-terminal hybrid PV and PEC system (HPEV). As in tandem arrangements, the PEC cell is optically connected in series with the PV cell. However, a second back contact is used to extract the PV cell surplus current and allow parallel production of both electrical power and chemical fuel. Devices consisting of three-terminal silicon photovoltaic cells coupled to titanium dioxide water splitting layers are simulated and fabricated. The cells are shown to produce electricity with little reduction in the water splitting current, surpass the current mismatch limits, and increase the overall system efficiency.

physics.app-ph↗

arXiv2011

High-Transconductance Graphene Solution-Gated Field Effect Transistors

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.

cond-mat.mtrl-sci↗