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Ian Leahy

Publications and source records attributed to Ian Leahy.

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Toward Tunable Magnetic Dirac Semimetals: Mn Doping of Cd$_3$As$_2$

Magnetic impurities provide a route toward increasing functionality in electronic materials, often enabling new device concepts and architectures. In the case of topological semimetals, dilute magnetic doping presents a particularly attractive approach for inducing a Dirac to Weyl phase change via time reversal symmetry breaking. However, efforts to realize changes in the electronic structure have been limited by challenges in incorporating magnetic impurities into crystals with sufficiently high electron mobilities to detect them via transport or spectroscopic techniques. Here, we demonstrate incorporation of Mn into Cd$_3$As$_2$ Dirac semimetal thin films grown by molecular beam epitaxy (MBE). Using As-rich growth conditions and [001] oriented thin films, Mn compositions of >10% are achieved. Films contain uniform distributions of Mn with no evidence of secondary phases and exhibit electron mobilities greater than 10,000-30,000 cm$^2$/Vs up to 5% Mn. An evolution in the magnetization behavior along with the emergence of a second quantum oscillation frequency at low Mn concentrations provide preliminary evidence of Mn-induced changes in the electronic structure that are consistent with a Weyl phase. This work demonstrates the potential of magnetically doping topological semimetal thin films and a pathway for synthesizing them.

cond-mat.mtrl-sci

Refining the Two-Band Model for Highly Compensated Semimetals Using Thermoelectric Coefficients

In studying compensated semimetals, the two-band model has proven extremely useful in capturing electrical conductivity under magnetic field, as a function of density and mobility of electron-like and hole-like carriers. However, it rarely offers practical insight into magneto-thermoelectric properties. Here, we report the field dependence of thermoelectric (TE) coefficients in a highly compensated semimetal NbSb$_2$, where we find the Seebeck and Nernst coefficients increase quadratically and linearly with applied magnetic field, respectively. Such field dependence was predicted in previous work that studied a system of two parabolic bands, within semiclassical Boltzmann transport theory when the following two conditions are simultaneously met:$ω_cτ\gg 1$ and $\tanθ_H \ll 1$. Under these conditions, we find the field dependence of the TE coefficients directly provides a relation between the electron-like ($n_e$) and hole-like ($n_h$) carrier densities, which in turn can be used to refine two-band model fitting. With this, we find the compensation factor ($\frac{|Δn|}{n_e}$) of NbSb$_2$ is two orders of magnitude smaller than what was found in unrestricted fitting, resulting in a larger saturation field scale for magnetoresistance. Within the same framework of the semiclassical theory, we also deduce that the thermoelectric Hall angle $\tanθ_γ = \frac{S_{xy}}{S_{xx}}$ can be expressed as $\big(\frac{|Δn|}{n_e} \times ω_cτ\big)^{-1}$, which serves as a parameter to predict the degree of compensation. Our findings offer crucial insights into identifying empirical conditions for field-induced enhancement of TE performance and into engineering efficient thermoelectric devices based on semimetallic materials.

cond-mat.str-el