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Idan Kizel

Publications and source records attributed to Idan Kizel.

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Polytype-Dependent Upconversion Photoluminescence in 3R-MoS2

Ferroelectric van der Waals materials offer switchable polarization states, yet optical readout of their stacking configurations remains challenging. Here, building on the resonant exciton-exciton annihilation (EEA) mechanism recently identified in 2H-phase TMDs, we report the first observation of upconversion photoluminescence (UPL) in rhombohedral MoS$_2$ and demonstrate that this many-body process is strongly polytype-dependent. Using low-temperature spectroscopy, we observe anti-Stokes emission with superlinear power dependence characteristic of EEA. Beyond serving as an accurate layer-number sensor due to discrete bandgap variations, UPL provides a sensitive probe of stacking order across thicknesses. The two neutral trilayer polytypes, which remain indistinguishable by surface potential measurements and second harmonic generation, exhibit markedly different UPL intensities. This sensitivity persists in thicker samples where multiple configurations coexist. First-principles calculations suggest that the intensity contrast originates primarily from the layer confinement of the annihilating excitons, while energy matching to the $Γ$ final-state manifold provides additional intensity selectivity. Power-dependent spectroscopy further disentangles two distinct annihilation channels originating from different dark exciton valleys, identified through their contrasting intensity scaling and opposite density-induced energy shifts. Crucially, the annihilation process doubles the energy separation of nearly degenerate dark excitons while converting their weak emission into bright signal, providing experimental access to valley-specific responses that are obscured in direct dark-exciton spectroscopy. Our findings demonstrate that ferroelectric configurations provide a new degree of freedom for controlling nonlinear optical processes.

cond-mat.mtrl-sci

Photoluminescence Detection of Polytype Polarization in r-MoS2 Enabled by Asymmetric Dielectric Environments

The rhombohedral (r) polytypes of transition metal dichalcogenides (TMDs) constitute a novel class of two-dimensional ferroelectric materials, where lateral shifts between parallel layers induce reversible out-of-plane polarization. This emerging field, known as SlideTronics, holds significant potential for next-generation electronic and optoelectronic applications. While extensive studies have investigated the effects of electrical and chemical doping on excitonic signatures in 2H-TMDs, as well as the influence of dielectric environments on their optical properties, the impact of intrinsic polarization in asymmetric environments remains largely unexplored. Here, we demonstrate a striking polarization-dependent photoluminescence (PL) contrast of up to 400\% between ferroelectric domains in bilayer and trilayer rhombohedral molybdenum disulfide (r-MoS2). This pronounced contrast arises from an asymmetric dielectric environment, which induces polarization-dependent shifts in the Fermi energy, leading to a modulation of the exciton-trion population balance. A detailed temperature-dependent line shape analysis of the PL, conducted from 4K to room temperature, reveals domain-specific trends that further reinforce the connection between polarization states and excitonic properties. The persistence of these distinct optical signatures at room temperature establishes PL as a robust and non-invasive probe for ferroelectric domain characterization, particularly in fully encapsulated device architectures where conventional techniques, such as Kelvin probe force microscopy, become impractical.

cond-mat.mtrl-sci