arXiv subjects

Ignacio M. Alliati

Publications and source records attributed to Ignacio M. Alliati.

3 recordsLinked to original sources

arXiv2023

Floquet formulation of the dynamical Berry-phase approach to non-linear optics in extended systems

We present a Floquet scheme for the ab-initio calculation of nonlinear optical properties in extended systems. This entails a reformulation of the real-time approach based on the dynamical Berry-phase polarisation [Attaccalite & Grüning, PRB 88, 1-9 (2013)] and retains the advantage of being non-perturbative in the electric field. The proposed method applies to periodically-driven Hamiltonians and makes use of this symmetry to turn a time-dependent problem into a self-consistent time-independent eigenvalue problem. We implemented this Floquet scheme at the independent particle level and compared it with the real-time approach. Our reformulation reproduces real-time-calculated $2^{nd}$ and $3^{rd}$ order susceptibilities for a number of bulk and two-dimensional materials, while reducing the associated computational cost by one or two orders of magnitude.

cond-mat.mtrl-sci↗

arXiv2021

Double $\mathbf{k}$-Grid Method for Solving the Bethe-Salpeter Equation via Lanczos Approaches

Convergence with respect to the size of the k-points sampling-grid of the Brillouin zone is the main bottleneck in the calculation of optical spectra of periodic crystals via the Bethe-Salpeter equation (BSE). We tackle this challenge by proposing a double grid approach to k-sampling compatible with the effective Lanczos-based Haydock iterative solution. Our method relies on a coarse k-grid that drives the computational cost, while a dense k-grid is responsible for capturing excitonic effects, albeit in an approximated way. Importantly, the fine k-grid requires minimal extra computation due to the simplicity of our approach, which also makes the latter straightforward to implement. We performed tests on bulk Si, bulk GaAs and monolayer MoS2, all of which produced spectra in good agreement with data reported elsewhere. This framework has the potential of enabling the calculation of optical spectra in semiconducting systems where the efficiency of the Haydock scheme alone is not enough to achieve a computationally tractable solution of the BSE, e.g., large-scale systems with very stringent k-sampling requirements for achieving convergence.

cond-mat.mtrl-sci↗

arXiv2020

Ultrafast current and field driven domain-wall dynamics in van der Waals antiferromagnet MnPS3

The discovery of magnetism in two-dimensional (2D) van der Waals (vdW) materials has flourished a new endeavour of fundamental problems in magnetism as well as potential applications in computing, sensing and storage technologies. Of particular interest are antiferromagnets, which due to their intrinsic antiferromagnetic exchange coupling show several advantages in relation to ferromagnets such as robustness against external magnetic perturbations. This property is one of the cornerstones of antiferromagnets and implies that information stored in antiferromagnetic domains is invisible to applied magnetic fields preventing it from being erased or manipulated. Here we show that, despite this fundamental understanding, the magnetic domains of recently discovered vdW MnPS3 antiferromagnet can be controlled via external magnetic fields and currents. We realize ultrafast domain-wall dynamics with velocities up to 1500 m/s and 3000 m/s respectively to a broad range of fields and current densities. Both domain wall dynamics are determined by the edge terminations which generated uncompensated spins following the underlying symmetry of the honeycomb structure. We find that edge atoms belonging to different magnetic sublattices function as geometrical constrictions preventing the displacement of the wall, whereas having atoms of the same sublattice at both edges of the material allows for the field-driven domain wall motion which is only limited by the spin-flop transition of the antiferromagnet beyond 25 T. Conversely, electric currents can induce motion of domain walls in most of the edges except those where the two sublattices are present at the borders (e.g. armchair edges). Our results indicate that the implementation of 2D vdW antiferromagnets in real applications requires the engineering of the layer edges which enables an unprecedented functional feature in ultrathin device platforms.

cond-mat.mes-hall↗