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Igor V. Vernik

Publications and source records attributed to Igor V. Vernik.

4 recordsLinked to original sources

Single Flux Quantum Circuit Operation at Millikelvin Temperatures

As quantum computing processors increase in size, there is growing interest in developing cryogenic electronics to overcome significant challenges to system scaling. Single flux-quantum (SFQ) circuits offer a promising alternative to remote, bulky, and power-hungry room temperature electronics. To meet the need for digital qubit control, readout, and co-processing, SFQ circuits must be adapted to operate at millikelvin temperatures near quantum processors. SEEQC's SFQuClass digital quantum management approach proximally places energy-efficient SFQ (ERSFQ) circuits and qubits in a multi-chip module. This enables extremely low power dissipation, compatible with a typical dilution cryostat's limited cooling power, while maintaining high processing speed and low error rates. We report on systematic testing from 4 K to 10 mK of a comprehensive set of ERSFQ cells, as well as more complex circuits such as programmable counters and demultiplexers used in digital qubit control. We compare the operating margins and error rates of these circuits and find that, at millikelvin, bias margins decrease and the center of the margins (i.e., the optimal bias current value) increases by ~15%, compared to 4.2 K. The margins can be restored by thermal annealing by reducing Josephson junction (JJ) critical current Ic. To provide guidance for how circuit parameters vary from 4.2 K to millikelvin, relevant analog process control monitors (PCMs) were tested in the temperature range of interest. The measured JJ critical current (of the PCM JJ arrays) increases by ~15% when decreasing temperature from 4.2 K to millikelvin, in good agreement with both theory and the empirically measured change in the center of bias margins for the tested digital circuits.

quant-ph

Fluxonium Qubits in a Flip-Chip Package

The strong anharmonicity and high coherence times inherent to fluxonium superconducting circuits are beneficial for quantum information processing. In addition to requiring high-quality physical qubits, a quantum processor needs to be assembled in a manner that minimizes crosstalk and decoherence. In this paper, we report work on fluxonium qubits packaged in a flip-chip architecture, where a classical control and readout chip is bump-bonded to the quantum chip, forming a multi-chip module (MCM). The modular approach allows for improved connectivity between the qubits and control/readout elements, and separate fabrication processes. We characterize the coherence properties of the individual fluxonium qubits, demonstrate high fidelity single-qubit gates with 6 ns microwave pulses (without DRAG), and identify the main decoherence mechanisms to improve on the reported results.

quant-ph

Properties of ferromagnetic Josephson junctions for memory applications

In this work we give a characterization of the RF effect of memory switching on Nb-Al/AlOx-(Nb)-Pd$_{0.99}$Fe$_{0.01}$-Nb Josephson junctions as a function of magnetic field pulse amplitude and duration, alongside with an electrodynamical characterization of such junctions, in comparison with standard Nb-Al/AlOx-Nb tunnel junctions. The use of microwaves to tune the switching parameters of magnetic Josephson junctions is a step in the development of novel addressing schemes aimed at improving the performances of superconducting memories.

cond-mat.supr-con

Magnetic Josephson Junctions with Superconducting Interlayer for Cryogenic Memory

We investigate Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SIS'FS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SIS'FS junctions fall into two distinct classes based on the thickness of S' layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SIS'FS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SIS'FS structure with thin superconducting S'-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibit IcRn product only ~30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SIS'FS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits.

cond-mat.supr-con