SearcharxivSearch

arXiv subjects

Ilay Mangel

Publications and source records attributed to Ilay Mangel.

7 recordsLinked to original sources

Flux-tunable transmon incorporating a van der Waals superconductor via an Al/AlO$_x$/4Hb-TaS$_2$ Josephson junction

Incorporating van der Waals (vdW) superconductors into Josephson elements extends circuit-QED beyond conventional Al/AlO$_x$/Al tunnel junctions and enables microwave probes of unconventional condensates and subgap excitations. In this work, we realize a flux-tunable transmon whose nonlinear inductive element is an Al/AlO$_x$/4Hb-TaS$_2$ Josephson junction. The tunnel barrier is formed by sequential deposition and full in-situ oxidation of ultrathin Al layers on an exfoliated 4Hb-TaS$_2$ flake, followed by deposition of a top Al electrode, yielding a robust, repeatable hybrid junction process compatible with standard transmon fabrication. Embedding the device in a three-dimensional copper cavity, we observe a SQUID-like flux-dependent spectrum that is quantitatively reproduced by a standard dressed transmon--cavity Hamiltonian, from which we extract parameters in the transmon regime. Across measured devices we obtain sub-microsecond energy relaxation ($T_1$ from $0.08$ to $0.69~\mu$s), while Ramsey measurements indicate dephasing faster than our $16$ ns time resolution. We also find a pronounced discrepancy between the Josephson energy inferred from spectroscopy and that expected from the Ambegaokar--Baratoff relation using room-temperature junction resistances, pointing to nontrivial junction physics in the hybrid Al/AlO$_x$/4Hb-TaS$_2$ system. Although we do not resolve material-specific subgap modes in the present geometry, this work establishes a practical route to integrating 4Hb-TaS$_2$ into coherent quantum circuits and provides a baseline for future edge-sensitive designs aimed at enhancing coupling to boundary and subgap degrees of freedom in vdW superconductors.

quant-ph

Trion gas on the surface of a failed excitonic insulator

Trions, three-body bound states composed of an exciton and an additional charge, are typically fragile and require external excitation to form. Here, we report the spontaneous emergence of a stable trion gas at the surface of the layered semiconductor Ta2NiS5, revealed through angle-resolved photoemission spectroscopy. We observe a sharp, highly localized in-gap feature that cannot be explained by conventional band-theory. Instead, we argue that it arises from the formation of negative trions, stabilized by surface-induced band bending and the material's quasi-one-dimensional geometry. Unlike excitons, these trions form without optical pumping and persist at equilibrium, marking a rare example of an interaction-driven surface state in a nominally conventional semiconductor. Our findings establish Ta2NiS5 as a unique platform for exploring many-body physics at surfaces and open new avenues for studying and controlling collective excitations in low-dimensional systems.

cond-mat.str-el

Mixed Triplet-Singlet Order Parameter in Decoupled Superconducting 1H Monolayers of Transition-Metal Dichalcogenides

Understanding the emergence of unconventional superconductivity, where the order parameter deviates from simple isotropic s-wave pairing, is a central puzzle in condensed matter physics. Transition-metal dichalcogenides (TMDCs), though generally regarded as conventional superconductors, display signatures of this unusual behavior and thus provide a particularly intriguing platform to explore how exotic states arise. Here we investigate the misfit compound (SnS)$_{1.15}$(TaS$_2$), a heterostructure composed of alternating SnS and 1H-TaS$_2$ layers. Using transport, photoemission, and scanning tunneling spectroscopy, we demonstrate that the SnS layers effectively decouple the TaS$_2$ into electronically isolated 1H sheets. In this limit, the tunneling density of states reveals a clear two-gap superconducting spectrum with T$_c \sim$ 3.1 K. A theoretical model based on lack of inversion symmetry and finite-range attraction reproduces the observed multi-gap structure as a mixed singlet-triplet state. These results establish misfit compounds as a powerful platform for studying unconventional superconductivity in isolated 1H layers and for realizing multiple uncoupled superconductors within a single crystal.

cond-mat.supr-con

Chiral charge density wave in 4Hb- and 1T-TaS$_2$: The Role of interlayer coupling

We use micro-angle-resolved photoemission spectroscopy (micro-ARPES) to investigate chiral charge density waves (CDWs) in 4Hb-TaS$_2$ with micron-scale spatial resolution. In the 1T layers of 4Hb-TaS$_2$, we uncover coexisting left- and right-handed CDW domains and resolve four distinct spectral patterns arising from the interplay of chirality and rotational stacking. In contrast, bulk 1T-TaS$_2$ exhibits a uniform chirality. In addition, 4Hb-TaS$_2$ shows negligible out-of-plane dispersion of the 1T-derived bands, in contrast to the pronounced interlayer coupling observed in bulk 1T-TaS$_2$. Density functional theory (DFT) calculations corroborate this picture, revealing that the interlayer interaction of the chiral order in 4Hb-TaS$_2$ is nearly two orders of magnitude weaker than in the 1T polytype. Our findings establish 4Hb-TaS$_2$ as a quasi-two-dimensional platform for exploring tunable chiral CDW phenomena.

cond-mat.str-el

Ising superconductivity in the bulk incommensurate layered material (PbS)$_{1.13}$(TaS$_2$)

Exploiting the spin-valley degree of freedom of electrons in materials is a promising avenue for energy-efficient information storage and quantum computing. A key challenge in utilizing spin-valley polarization is the realization of spin-valley locking in bulk systems. Here, we report a comprehensive study of the noncentrosymmetric bulk misfit compound (PbS)$_{1.13}$(TaS$_2$), showing a strong spin-valley locking. Our investigation reveals Ising superconductivity with a transition temperature of 3.14 K, closely matching that of a monolayer of TaS$_2$. Notably, the absence of charge density wave (CDW) signatures in transport measurements suggests that the PbS layers primarily act as spacers between the dichalcogenide monolayers. This is further supported by angle-resolved photoemission spectroscopy (ARPES), which shows negligible interlayer coupling, a lack of dispersion along the $k_{\perp}$ direction and significant charge transfer from the PbS to the TaS$_2$ layers. Spin resolved ARPES shows strong spin-valley locking of the electronic bands. Muon spin rotation experiments conducted in the vortex phase reveal an isotropic superconducting gap. However, the temperature dependence of the upper critical field and low-temperature specific heat measurements suggest the possibility of multigap superconductivity. These findings underscore the potential of misfit compounds as robust platforms for both realizing and utilizing spin-valley locking in bulk materials, as well as exploring proximity effects in two-dimensional structures.

cond-mat.supr-con

Emergence of a Fermi-surface in the current-driven Hidden state of 1T-TaS$_2$

The origin of the insulating state in 1T-TaS$_2$ has long been a subject of debate. A short current pulse transforms this insulating state into a metastable metallic phase. Using micro-ARPES, we investigate the electronic structure of this phase and uncover spatially dependent modifications caused by the current pulse. In some regions of the sample, a Fermi surface emerges, while others remain gapped. Detailed band structure analysis reveals that the metallic regions exhibit an electronic structure similar to that observed in the high-temperature phase of 1T-TaS$_2$, characterized by suppressed energy gaps and bands crossing the Fermi level. Furthermore, the metallic and insulating regions display distinct dispersions along the out-of-plane direction. These observations suggest a scenario in which the current pulse breaks the star-of-David dimers characteristic of the insulating phase, implicating these dimers as the likely origin of the insulating behavior in 1T-TaS$_2$.

cond-mat.str-el

Charge transfer and Spin-Valley locking in 4Hb-TaS$_{2}$

4Hb-TaS$_2$ is a superconductor that exhibits unique characteristics such as time-reversal symmetry breaking, hidden magnetic memory, and topological edge modes. It is a naturally occurring heterostructure comprising of alternating layers of 1H-TaS$_2$ and 1T-TaS$_2$. The former is a well-known superconductor, while the latter is a correlated insulator with a possible non-trivial magnetic ground state. In this study, we use angle resolved photoemission spectroscopy to investigate the normal state electronic structure of this unconventional superconductor. Our findings reveal that the band structure of 4H-TaS$_2$ fundamentally differs from that of its constituent materials. Specifically, we observe a significant charge transfer from the 1T layers to the 1H layers that drives the 1T layers away from half-filling. In addition, we find a substantial reduction in inter-layer coupling in 4Hb-TaS$_2$ compared to the coupling in 2H-TaS$_2$ that results in a pronounced spin-valley locking within 4Hb-TaS$_2$

cond-mat.supr-con