arXiv subjects

Ilya A. Stepanov

Publications and source records attributed to Ilya A. Stepanov.

5 recordsLinked to original sources

arXiv2026

Tantalum as a base material for superconducting integrated circuits

The performance of superconducting integrated circuits for quantum applications is fundamentally limited by material-related losses. Tantalum, as an emerging material for next-generation quantum circuits, has attracted considerable attention in recent years after demonstrating breakthrough performance in both superconducting microwave resonators and qubits. Concurrently, a growing body of work is devoted to the operation of tantalum-based circuits and related fabrication techniques. This interest is further stimulated by tantalum thin films polymorphism resulting in a variety of its crystalline structure, superconducting properties, coherence, etc. Furthermore, tantalum circuits exhibit distinctive features in cryogenic experiments, which have not been observed in aluminum- or niobium-based ones. In this review, we summarize the recent research of tantalum thin films growth and phase selection mechanisms on various substrates, key aspects of fabrication and performance of superconducting circuit, including a material first-principles theoretical study. In conclusion, we address a number of open issues, including the role of \b{eta}-phase impurities, the effect of hydrofluoric acid solutions on chain characteristics, and the anomalous behavior of α-tantalum chains at cryogenic temperatures.

quant-ph↗

arXiv2026

Superconducting single-photon detectors for integrated quantum photonics

Single-photon detection possibility is a fundamental requirement for quantum technologies, including communication, computing and sensing. To achieve scalability and practical deployment, increasing attention is being directed toward integration of detectors with photonic integrated circuits, which offer compactness and compatibility with mass production. Superconducting nanowire single-photon detectors have emerged as the leading solution, combining near-unity efficiency, high temporal performance and the ability to be embedded across a wide range of photonic material platforms. In this review we trace the development of integrated superconducting nanowire single-photon detectors from early demonstrations to recent advances, outlining the progress in device architectures, material engineering and integration strategies. We also discuss performance benchmarks, emerging alternative designs, the future opportunities and challenges for this rapidly evolving field.

physics.optics↗

arXiv2024

Tutorial on Silicon Photonics Integrated Platform Fiber Edge Coupling

Photonic integrated circuits (PICs) play a crucial role in almost every aspect of modern life, such as data storage, telecommunications, medical diagnostics, green energy, autonomous driving, agriculture, and high-performance computing. To fully harness their benefits, an efficient coupling mechanism is required to successfully launch light into waveguides from fibers. This study introduces low-loss coupling strategies and their implementation for a silicon nitride integrated platform. Here we present an overview of coupling technologies, optimized designs, and a tutorial on manufacturing techniques for inverted tapers, which enable effective coupling for both transverse-magnetic and transverse-electric modes. The optimized coupling losses for the UHNA-7 fiber and the inverted taper Si3N4 coupler reached -0.15 dB at 1550 nm per connection for single-mode waveguides with 220x1200 nm cross section. The measured coupling losses in the inverted taper coupler with a standard single-mode fiber were -1.50 dB at 1550 nm per connection for the same platform.

physics.optics↗

arXiv2024

Silicon nitride integrated photonics from visible to mid-infrared spectra

Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number of Si3N4 integrated photonics platform applications is constantly growing including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR) devices, hybrid neuromorphic and quantum computing. Their heterogeneous integration with a III-V platform leads to a new advanced large scale PICs with thousands of elements. Here, we review key trends in Si3N4 integrated circuits technology and fill an information gap in the field of state-of-the-art photonic devices operating from visible to mid-infrared spectra. A comprehensive overview of Si3N4 integrared circtuis microfabrication process details (deposition, lithography, etching, etc.) is introduced. Finally, we point out the limits and challenges of silicon nitride photonics performance in an ultrawide range providing routes and prospects for their future scaling and optimization.

physics.optics↗

arXiv2023

Sputtered NbN Films for Ultrahigh Performance Superconducting Nanowire Single-Photon Detectors

Nowadays ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with a desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) films properties and superconducting nanowire single-photon detectors characteristics, as well as ultrathin NbN films properties dependence on reactive magnetron sputtering recipes. Based on this study we formulate the exact requirements to ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally study ultrathin NbN films properties (morphology, crystalline structure, critical temperature, sheet resistance) on silicon, sapphire, silicon dioxide and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 ~$Ω$/sq, as well as investigate a sheet resistance evolution over for more than 40\% within two years. Finally, we found out that one should use ultrathin NbN films with specific critical temperature near 9 K and sheet resistance of 400 ~$Ω$/sq for ultrahigh performance SNSPD.

cond-mat.supr-con↗