Ilya Eliseyev | Searcharxiv

arXiv2025

Mie-resonant silicon waveguide for efficient coupling with excitonic emitters in InSe

Enhancement of radiative coupling efficiency between out-of-plane excitonic emitters in an indium selenide (InSe) film and an integrated waveguide formed by silicon (Si) Mie-resonant nanodisks is experimentally studied. Photoluminescence power at the resonant waveguide output is increased by~2.5 times at 950~nm in comparison with the case of a conventional rib waveguide of the same geometrical parameters due to the efficient excitation of Mie-type magnetic dipole resonances in individual nanoparticles. These results show inspiring possibilities for creating new on-chip light emitters for various integrated photonics applications.

physics.optics↗

arXiv2023

Allotropic Ga$_2$Se$_3$/GaSe nanostructures grown by van der Waals epitaxy: Narrow exciton lines and single-photon emission

The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenides and other layered crystals in quantum technology to create non-classical light. Currently, the main method of their formation is exfoliation followed by strain and defect engineering. A factor limiting the use of epitaxy is the presence of different phases in the grown films. In this work, we show that control over their formation makes it possible to create structures with the desired properties. We propose Ga$_2$Se$_3$/GaSe nanostructures by van der Waals epitaxy with a high VI/III flux ratio as a source of narrow exciton lines. Actually, these nanostructures are a combination of allotropes: GaSe and Ga$_2$Se$_3$, consisting of the same atoms in different arrangements. The energy position of the narrow lines is determined by the quantum confinement in Ga$_2$Se$_3$ inclusions of different sizes in the GaSe matrix, similar to quantum dots, and their linear polarization is due to the ordering of Ga vacancies in a certain crystalline direction in Ga$_2$Se$_3$. Such nanostructures exhibit single-photon emission with second-order correlation function $g^{(2)}(0)\sim$0.1 at 10 K that makes them promising for quantum technologies.

cond-mat.mes-hall↗