arXiv subjects

Iman Esmaeil Zadeh

Publications and source records attributed to Iman Esmaeil Zadeh.

At least 19 recordsLinked to original sources

arXiv2026

Monolithic high density integrated photonics on bulk lithium niobate

Functional electro-optic (EO) tunable photonic integrated circuits are crucial to next-generation information processing and advanced computing, where ferroelectric materials such as lithium niobate (LiNbO3) provide outstanding optical properties and versatile tuning mechanisms. However, beyond achieving high-performance devices, practical deployment of LiNbO3 photonic integrated circuits requires rapid and cost-effective scale-up, which remains challenging because of the fabrication complexity and high costs of ion-sliced thin-film lithium niobate and wafer bonding processes. To address this gap, we demonstrate a fully monolithic photonic platform, amorphous silicon carbide (a-SiC) on bulk LiNbO3 crystal substrate, enabling scalable, CMOS-compatible, low-cost, and high-density photonic integrated circuits without relying on thin-film LiNbO3. This integration approach breaks the long-standing cost-performance-scalability tradeoff, and intrinsically eliminates the need for sophisticated fabrication processes, including ion slicing, wafer bonding, and LiNbO3 etching. It realizes high-density, low-loss, and record high EO tuning efficiency of VpiL = 2.87 Vcm on bulk LiNbO3 crystal substrate. Furthermore, leveraging slow-light effect near photonic crystal bandgap, an 8.5-fold EO tuning efficiency enhancement is achieved, highlighting the platform's capability in confinement control and dispersion engineering.

physics.optics↗

arXiv2026

Reconfigurable and cascaded logic gates using dual-input multilayered heater nanocryotrons

Superconducting electronics have emerged as a promising platform for advanced information processing, offering unique opportunities for on chip computation and signal manipulation at cryogenic temperatures. These devices hold particular potential in applications ranging from quantum computing to high sensitivity magnetic sensing, where integrated logic and scalable circuit architectures are essential for performing complex computational and signal-processing tasks. In this work, we present a dual-input multilayered heater nanocryotron (hTron) that introduces both multi input functionality and reconfigurable logic capability within a single device. This capability represents a step forward toward realizing more complex computational architectures. In addition, we demonstrate that these devices can, in principle, drive one another and potentially be integrated on a larger scale. Furthermore, the inherent reconfigurability of the demonstrated device allows for dynamic switching between logic operations without requiring additional components which reduces circuit area and simplifies cryogenic and biasing requirements, making the design highly suitable for scalable superconducting computing systems.

physics.optics↗

arXiv2025

Controlling the recovery time of the superconducting nanowire single-photon detector with a voltage-controlled cryogenic tunable resistor

Superconducting nanowire single-photon detectors (SNSPD), owing to their unique performance, are currently the standard detector in most demanding single-photon experiments. One important metric for any single-photon detector is the deadtime (or recovery time), defined as the minimum temporal separation between consecutive detection events. In SNSPDs, the recovery time is more subtle, as the detection efficiency does not abruptly drop to zero when the temporal separation between detection events gets smaller, instead, it increases gradually as the SNSPD current recovers. SNSPD's recovery time is dominated by its kinetic inductance, the readout impedance, and the degree of saturation of internal efficiency. Decreasing the kinetic inductance or increasing the readout impedance can accelerate the recovery process. Significant reduction of the SNSPD recovery time, by, for example, adding a series resistor in the readout circuitry, is possible but can lead to detector latching which hinders further detector operation or enforces underbiasing and hence a reduction in detection efficiency. Previous research has demonstrated passive resistive networks for the reduction of recovery time that rely on trial and error to find the appropriate resistance values. Here we show, using a novel, cryogenically compatible, and tunable resistor technology, one can find the optimized impedance values, delivering fast SNSPD recovery time, while maintaining maximum internal detection efficiency. Here we show an increase of more than 2 folds in both maximum achievable detection rates and the achievable detection efficiency at high photon fluxes, demonstrating detection rates as high as 120 Mcps with no loss of internal detection efficiency.

physics.ins-det↗

arXiv2025

Heterogeneous integration of silicon nitride and amorphous silicon carbide photonics

Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order nonlinearities. Furthermore, a-SiC can be easily deposited via CMOS-compatible chemical vapor deposition (CVD) techniques, allowing for precise thickness control and adjustable material properties on arbitrary substrates. Silicon nitride (SiN) is an industrial well-established and well-matured platform, which exhibits ultra-low propagation loss, but it is suboptimal for high-density reconfigurable photonics due to the large minimum bending radius and constrained tunability. In this work, we monolithically combine a-SiC with SiN photonics, leveraging the merits of both platforms, and achieve the a-SiC/SiN heterogeneous integration with an on-chip interconnection loss of 0.32$\pm$0.10 dB, and integration density increment exceeding 4,444-fold. By implementing active devices on a-SiC, we achieve 27 times higher thermo-optic tuning efficiency, with respect to the SiN photonic platform. In addition, the a-SiC/SiN platform gives the flexibility to choose the optimal fiber-to-chip coupling strategy depending on the interfacing platform, with efficient side-coupling on SiN and grating-coupling on a-SiC platform. The proposed a-SiC/SiN photonic platform can foster versatile applications in programmable and quantum photonics, nonlinear optics, and beyond.

physics.optics↗

arXiv2025

Amorphous Silicon-Carbide Photonics for Ultrasound Imaging

Photonic ultrasound sensors offer unparalleled potential for improving spatial and temporal resolution in ultrasound imaging applications due to their size-independent noise figure, high sensitivity, and broad bandwidth characteristics. The exploration of optical materials in ultrasound sensing has attracted significant interest due to their potential to further enhance device performance, fabrication compatibility, and long-term stability. This work introduces amorphous silicon carbide (a-SiC) as a material for optical ultrasound sensing. a-SiC offers a balanced combination of optical confinement, low propagation loss, and high material stability, enabling sensitive and miniaturized microring sensors. We demonstrate a compact ultrasound detection system with a linear array of 20 transducers coupled to a single bus waveguide. The sensors feature a maximum optical finesse of 1320 and an intrinsic platform sensitivity of 78 fm/kPa, leading to a noise equivalent pressure density below 55 $\mathrm{mPa}/\sqrt{\mathrm{Hz}}$, which is calibrated to a hydrophone from 3.36 MHz to 30 MHz. Additionally, we perform high-resolution ultrasound imaging of fine structures, highlighting the viability of these sensors in real-world applications. Moreover, its low deposition temperature allows a-SiC material for optical ultrasound sensors to be integrated on most substrates. These results position a-SiC as a promising material for optical ultrasound sensing, offering a miniaturized, low-loss, and high-sensitivity solution for next-generation photoacoustic imaging applications.

physics.optics↗

arXiv2025

From Pixels to Camera: Scaling Superconducting Nanowire Single-Photon Detectors for Imaging at the Quantum-Limit

Superconducting nanowire single-photon detectors (SNSPDs) have emerged as essential devices that push the boundaries of photon detection with unprecedented sensitivity, ultrahigh timing precision, and broad spectral response. Recent advancements in materials engineering, superconducting electronics integration, and cryogenic system design are enabling the evolution of SNSPDs from single-pixel detectors toward scalable arrays and large-format single-photon time tagging cameras. This perspective article surveys the rapidly evolving technological landscape underpinning this transition, focusing on innovative superconducting materials, advanced multiplexed read-out schemes, and emerging cryo-compatible electronics. We highlight how these developments are set to profoundly impact diverse applications, including quantum communication networks, deep-tissue biomedical imaging, single-molecule spectroscopy, remote sensing with unprecedented resolution, and the detection of elusive dark matter signals. By critically discussing both current challenges and promising solutions, we aim to articulate a clear, coherent vision for the next generation of SNSPD-based quantum imaging systems.

quant-ph↗

arXiv2024

Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate

In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal-oxide semiconductor (CMOS) fabrication lines, limiting its scalability. Silicon carbide (SiC) is an emerging material platform with a high refractive index, a large non-linear Kerr coefficient, and a promising candidate for heterogeneous integration with LN photonics. Current approaches of SiC/LN integration require transfer-bonding techniques, which are time-consuming, expensive, and lack precision in layer thickness. Here we show that amorphous silicon carbide (a-SiC), deposited using inductively coupled plasma enhanced chemical vapor deposition (ICPCVD) at low temperatures (< 165 C), can be conveniently integrated with LiNbO3 and processed to form high-performance photonics. Most importantly, the fabrication only involves a standard, silicon-compatible, reactive ion etching step and leaves the LiNbO3 intact, hence its compatibility with standard foundry processes. As a proof-of-principle, we fabricated waveguides and ring resonators on the developed a-SiC/LN platform and achieved intrinsic quality factors higher than 106,000 and resonance electro-optic tunability of 3.4 pm/V with 3 mm tuning length. We showcase the possibility of dense integration by fabricating and testing ring resonators with 40um radius without a noticeable loss penalty. Our platform offers a CMOS-compatible and scalable approach for implementation of future fast electro-optic modulators and reconfigurable photonic circuits as well as nonlinear processes which can benefit from involving both second and third-order nonlinearities.

physics.optics↗

arXiv2024

Magic silicon dioxide for widely tunable integrated photonics

Integrated photonic circuits have transformed data communication, biosensing, and light detection and ranging, and hold wide-ranging potential for optical computing, optical imaging and signal processing. These applications often require tunable and reconfigurable photonic components, most commonly accomplished through the thermo-optic effect. However, the resulting tuning window is limited for standard optical materials such as silicon dioxide and silicon nitride. Most importantly, bidirectional thermal tuning on a single platform has not been realized. For the first time, we show that by tuning and optimizing the deposition conditions in inductively-coupled plasma chemical vapor deposition (ICPCVD) of silicon dioxide, this material can be used to deterministically tune the thermo-optic properties of optical devices without introducing significant losses. We demonstrate that we can deterministically integrate positive and negative wavelength shifts on a single chip, validated on amorphous silicon carbide (a-SiC), silicon nitride (SiN) and silicon-on-insulator (SOI) platforms. We observe up to a 10-fold improvement of the thermo-optic tunability and, in addition, demonstrate athermal ring resonators with shifts as low as 1.5 pm/°C. This enables the fabrication of a novel tunable coupled ring optical waveguide (CROW) requiring only a single heater. In addition, the low-temperature deposition of our silicon dioxide cladding can be combined with lift-off to isolate the optical devices resulting in a decrease in thermal crosstalk by at least two orders of magnitude. Our method paves the way for novel photonic architectures incorporating bidirectional thermo-optic tunability.

physics.optics↗

arXiv2024

Attojoule superconducting thermal logic and memories

Due to stringent thermal budgets in cryogenic technologies such as superconducting quantum computers and sensors, minimizing the energy dissipation and power consumption of cryogenic electronic components is pivotal for large-scale devices. However, electronic building blocks that simultaneously offer low energy consumption, fast switching, low error rates, a small footprint and simple fabrication remain elusive. In this work, we demonstrate a superconducting switch with attojoule switching energy, high speed (pico-second rise/fall times), and high integration density (on the order of $10^{-2}$ $\mathrm{μm^2}$ per switch). The switch consists of a superconducting channel and a metal heater separated by an insulating silica layer, prepared using lift-off techniques. We experimentally demonstrate digital gate operations utilizing this technology, such as NOT, NAND, NOR, AND, and OR gates, with a few femtojoule energy consumption and ultralow bit error rates < $10^{-8}$. In addition, we build volatile memory elements with few femtojoule energy consumption per operation, a nanosecond operation speed, and a retention time over $10^5$ s. These superconducting switches open new possibilities for increasing the size and complexity of modern cryogenic technologies.

physics.app-ph↗

arXiv2023

Real-Time Measurements of Photonic Microchips with Femtometer-Scale Spectral Precision and Ultra-High Sensitivity

Photonic integrated circuits (PICs) are enabling major breakthroughs in a number of areas, including quantum computing, neuromorphic processors, wearable devices, and more. Nevertheless, existing PIC measurement methods lack the spectral precision, speed, and sensitivity required for refining current applications and exploring new frontiers such as point-of-care or wearable biosensors. Here, we present the Sweeping Optical Frequency Mixing Method (SOHO), surpassing traditional PIC measurement methods with real-time operation, 30 dB higher sensitivity, and over 100 times better spectral resolution. Leveraging the frequency mixing process with a sweeping laser and custom control software, SOHO excels in simplicity, eliminating the need for advanced optical components and additional calibration procedures. We showcase its superior performance on ultrahigh-quality factor (Q) fiber-loop resonators (Q = 46M) as well as microresonators realized on a new optical waveguide platform. An experimental spectral resolution of 19.1 femtometers is demonstrated using an 85-meter-long unbalanced fiber Mach Zehnder Interferometer, constrained by noise resulting from the extended fiber length, while the theoretical resolution is calculated to be 6.2 femtometers, limited by the linewidth of the reference laser. With its excellent performance metrics, SOHO has the potential to become a vital measurement tool in photonics, excelling in high-speed and high-resolution measurements of weak optical signals.

physics.optics↗

arXiv2023

Nanowire-based Integrated Photonics for Quantum Information and Quantum Sensing

At the core of quantum photonic information processing and sensing, two major building pillarsare single-photon emitters and single-photon detectors. In this review, we systematically summarize the working theory, material platform, fabrication process, and game-changing applications enabled by state-of-the-art quantum dots in nanowire emitters and superconducting nanowire single-photon detectors. Such nanowire-based quantum hardware offers promising properties for modern quantum optics experiments.We highlight several burgeoning quantum photonics applications using nanowires and discuss development trends of integrated quantum photonics. Also, we propose quantum information processing and sensing experiments for the quantum optics community, and future interdisciplinary applications.

quant-ph↗

arXiv2021

Mid-infrared Single-photon Detection Using Superconducting NbTiN Nanowires with Sub-15 ps Time Resolution in a Gifford-McMahon Cryocooler

Shortly after their inception, superconducting nanowire single-photon detectors (SNSPDs) became the leading quantum light detection technology. With the capability of detecting single-photons with near-unity efficiency, high time resolution, low dark count rate, and fast recovery time, SNSPDs outperform conventional single-photon detection techniques. However, detecting lower energy single-photons (<0.8 eV) with high efficiency and low timing jitter has remained a challenge. To achieve unity internal efficiency at mid-infrared wavelengths, previous works used amorphous superconducting materials with low energy gaps at the expense of reduced time resolution (close to a nanosecond), and by operating them in complex mK dilution refrigerators. In this work, we provide an alternative approach with SNSPDs fabricated from 5-9.5 nm thick NbTiN superconducting films and devices operated in conventional Gifford-McMahon (GM) cryocoolers. By optimizing the superconducting film deposition process, film thickness and nanowire design, our fiber-coupled devices achieved > 70% system detection efficiency (SDE) at 2 μm and sub-15 ps timing jitter. Furthermore, detectors from the same batch demonstrated unity internal detection efficiency at 3 μm and 80% internal efficiency at 4 μm, paving the road for an efficient mid-infrared single-photon detection technology with unparalleled time resolution and without mK cooling requirements.

physics.ins-det↗

arXiv2020

Detecting Infrared Single Photons with Near-Unity System Detection Efficiency

Single photon detectors are indispensable tools in optics, from fundamental measurements to quantum information processing. The ability of superconducting nanowire single photon detectors to detect single photons with unprecedented efficiency, short dead time and high time resolution over a large frequency range enabled major advances in quantum optics. However, combining near-unity system detection efficiency with high timing performance remains an outstanding challenge. In this work, we show novel superconducting nanowire single photon detectors fabricated on membranes with 94-99.5 (plus minus 2.07%) system detection efficiency in the wavelength range 1280-1500 nm. The SiO2/Au membrane enables broadband absorption in small SNSPDs, offering high detection efficiency in combination with high timing performance. With low noise cryogenic amplifiers operated in the same cryostat, our efficient detectors reach timing jitter in the range of 15-26 ps. We discuss the prime challenges in optical design, device fabrication as well as accurate and reliable detection efficiency measurements to achieve high performance single-photon detection. As a result, the fast-developing fields of quantum information science, quantum metrology, infrared imaging and quantum networks will greatly benefit from this far-reaching quantum detection technology.

quant-ph↗

arXiv2020

A platform for high performance photon correlation measurements

A broad range of scientific and industrial disciplines require precise optical measurements at very low light levels. Single-photon detectors combining high efficiency and high time resolution are pivotal in such experiments. By using relatively thick films of NbTiN (8-11\,nm) and improving the pattern fidelity of the nano-structure of the superconducting nanowire single-photon detectors (SNSPD), we fabricated devices demonstrating superior performance over all previously reported detectors in the combination of efficiency and time resolution. Our findings prove that small variations in the nanowire width, in the order of a few nanometers, can lead to a significant penalty on their temporal response. Addressing these issues, we consistently achieved high time resolution (best device 7.7\,ps, other devices $\sim$10-16\,ps) simultaneously with high system detection efficiencies ($80-90\%$) in the wavelength range of 780-1000\,nm, as well as in the telecom bands (1310-1550\,nm). The use of thicker films allowed us to fabricate large-area multi-pixel devices with homogeneous pixel performance. We first fabricated and characterized a $100\times100\, μm^2$ 16-pixel detector and showed there was little variation among individual pixels. Additionally, to showcase the power of our platform, we fabricated and characterized 4-pixel multimode fiber-coupled detectors and carried out photon correlation experiments on a nanowire quantum dot resulting in $g^2(0)$ values lower than 0.04. The multi-pixel detectors alleviate the need for beamsplitters and can be used for higher order correlations with promising prospects not only in the field of quantum optics, but also in bio-imaging applications, such as fluorescence microscopy and positron emission tomography.

physics.ins-det↗

arXiv2019

High performance superconducting nanowire single photon detectors operating at temperature from 4 to 7 K

We experimentally investigate the performance of NbTiN superconducting nanowire single photon detectors above the base temperature of a conventional Gifford-McMahon cryocooler (2.5 K). By tailoring design and thickness (8 - 13 nm) of the detectors, high performance, high operating temperature, single-photon detection from the visible to telecom wavelengths are demonstrated. At 4.3 K, a detection efficiency of 82 % at 785 nm wavelength and a timing jitter of 30 $\pm$ 0.3 ps are achieved. In addition, for 1550 nm and similar operating temperature we measured a detection efficiency as high as 64 %. Finally, we show that at temperatures up to 7 K, unity internal efficiency is maintained for the visible spectrum. Our work is particularly important to allow for the large scale implementation of superconducting single photon detectors in combination with heat sources such as free-space optical windows, cryogenic electronics, microwave sources and active optical components for complex quantum optical experiments and bio-imaging.

physics.ins-det↗

arXiv2019

Nb$_x$Ti$_{1-x}$N low timing jitter single-photon detectors with unity internal efficiency at 1550 nm and 2.5 K

The requirements in quantum optics experiments for high single photon detection efficiency, low timing jitter, low dark count rate and short dead time have been fulfilled with the development of superconducting nanowire single photon detectors. Although they offer a detection efficiency above 90%, achieving a high time resolution in devices made of amorphous materials is a challenge, particularly at temperatures above 0.8 K. Devices made from niobium nitride and niobium titanium nitride allow to reach the best timing jitter, but in turn have stronger requirements in terms of film quality to achieve a high efficiency. Here we take advantage of the flexibility of reactive co-sputter deposition to tailor the composition of NbxTi1-xN superconducting films, and show that a Nb fraction of x = 0.62 allows for the fabrication of detectors from films as thick as 9 nm and covering an active area of 20 μm, with a wide detection saturation plateau at telecom wavelengths and in particular at 1550 nm. This is a signature of an internal detection efficiency saturation, achieved while maintaining the high time resolution associated with NbTiN and operation at 2.5K. With our optimized recipe, we reliably fabricated detectors with high critical current densities reaching a saturation plateau at 1550 nm with 80% system detection efficiency, and with a FWHM timing jitter as low as 19.47 ps.

physics.ins-det↗

arXiv2018

Controlled integration of selected detectors and emitters in photonic integrated circuits

Integration of superconducting nanowire single photon detectors and quantum sources with photonic waveguides is crucial for realizing advanced quantum integrated circuits. However, scalability is hindered by stringent requirements on high performance detectors. Here we overcome the yield limitation by controlled coupling of photonic channels to pre-selected detectors based on measuring critical current, timing resolution, and detection efficiency. As a proof of concept of our approach, we demonstrate a hybrid on-chip full-transceiver consisting of a deterministically integrated detector coupled to a selected nanowire quantum dot through a filtering circuit made of a silicon nitride waveguide and a ring resonator filter, delivering 100 dB suppression of the excitation laser. In addition, we perform extensive testing of the detectors before and after integration in the photonic circuit and show that the high performance of the superconducting nanowire detectors, including timing jitter down to 23 $\pm$ 3 ps, is maintained. Our approach is fully compatible with wafer level automated testing in a cleanroom environment.

physics.app-ph↗

arXiv2018

A single-photon detector with high efficiency and sub-10ps time resolution

The observation of fast physical dynamics using optical techniques currently relies on indirect methods, such as pump-probe measurements. One reason for this is the lack of an efficient detector with high time resolution. Single-photon detectors with high efficiency and ultra-high time resolution serve as the best candidates for replacing such indirect methods. We engineer the nano-structure of Superconducting Nanowire Single-Photon Detectors (SNSPDs) to achieve a time resolution better than 10ps and at the same time a high efficiency (>86%). Furthermore, at the limit of multiphoton excitation, using an improved readout technique, we reach an unprecedented time resolution of <3ps. These findings set a new upper limit for the intrinsic time resolution of SNSPDs and open up new possibilities for direct observation of fast phenomena in different fields of science.

physics.ins-det↗